|
US5854803A
(en)
*
|
1995-01-12 |
1998-12-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Laser illumination system
|
|
US6555449B1
(en)
|
1996-05-28 |
2003-04-29 |
Trustees Of Columbia University In The City Of New York |
Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
|
|
US6830993B1
(en)
|
2000-03-21 |
2004-12-14 |
The Trustees Of Columbia University In The City Of New York |
Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
|
|
WO2002031869A2
(en)
|
2000-10-10 |
2002-04-18 |
The Trustees Of Columbia University In The City Of New York |
Method and apparatus for processing thin metal layers
|
|
JP4744700B2
(ja)
*
|
2001-01-29 |
2011-08-10 |
株式会社日立製作所 |
薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
|
|
US20020117718A1
(en)
*
|
2001-02-28 |
2002-08-29 |
Apostolos Voutsas |
Method of forming predominantly <100> polycrystalline silicon thin film transistors
|
|
JP3903761B2
(ja)
|
2001-10-10 |
2007-04-11 |
株式会社日立製作所 |
レ−ザアニ−ル方法およびレ−ザアニ−ル装置
|
|
TWI291729B
(en)
|
2001-11-22 |
2007-12-21 |
Semiconductor Energy Lab |
A semiconductor fabricating apparatus
|
|
US7133737B2
(en)
*
|
2001-11-30 |
2006-11-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
|
|
CN100508140C
(zh)
*
|
2001-11-30 |
2009-07-01 |
株式会社半导体能源研究所 |
用于半导体器件的制造方法
|
|
JP2003168645A
(ja)
*
|
2001-12-03 |
2003-06-13 |
Hitachi Ltd |
半導体薄膜装置、その製造方法及び画像表示装置
|
|
US7214573B2
(en)
*
|
2001-12-11 |
2007-05-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device that includes patterning sub-islands
|
|
US6933527B2
(en)
*
|
2001-12-28 |
2005-08-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and semiconductor device production system
|
|
EP1326273B1
(en)
|
2001-12-28 |
2012-01-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
|
JP4011344B2
(ja)
*
|
2001-12-28 |
2007-11-21 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
|
US6841797B2
(en)
*
|
2002-01-17 |
2005-01-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device formed over a surface with a drepession portion and a projection portion
|
|
US6847050B2
(en)
|
2002-03-15 |
2005-01-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element and semiconductor device comprising the same
|
|
JP2003282438A
(ja)
*
|
2002-03-27 |
2003-10-03 |
Seiko Epson Corp |
半導体装置の製造方法及び半導体装置、電気光学装置、電子機器
|
|
JP3873811B2
(ja)
*
|
2002-05-15 |
2007-01-31 |
日本電気株式会社 |
半導体装置の製造方法
|
|
JP2003332350A
(ja)
|
2002-05-17 |
2003-11-21 |
Hitachi Ltd |
薄膜半導体装置
|
|
AU2003258289A1
(en)
|
2002-08-19 |
2004-03-03 |
The Trustees Of Columbia University In The City Of New York |
A single-shot semiconductor processing system and method having various irradiation patterns
|
|
US7622370B2
(en)
|
2002-08-19 |
2009-11-24 |
The Trustees Of Columbia University In The City Of New York |
Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
|
|
JP2004087535A
(ja)
*
|
2002-08-22 |
2004-03-18 |
Sony Corp |
結晶質半導体材料の製造方法および半導体装置の製造方法
|
|
JP4474108B2
(ja)
|
2002-09-02 |
2010-06-02 |
株式会社 日立ディスプレイズ |
表示装置とその製造方法および製造装置
|
|
JP2004103628A
(ja)
*
|
2002-09-05 |
2004-04-02 |
Hitachi Ltd |
レーザアニール装置及びtft基板のレーザアニール方法
|
|
FR2844920B1
(fr)
*
|
2002-09-24 |
2005-08-26 |
Corning Inc |
Transistor a couche mince de silicium et son procede de fabrication
|
|
US7405114B2
(en)
*
|
2002-10-16 |
2008-07-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Laser irradiation apparatus and method of manufacturing semiconductor device
|
|
WO2004049412A2
(en)
*
|
2002-11-27 |
2004-06-10 |
Canon Kabushiki Kaisha |
Producing method for crystalline thin film
|
|
WO2004075263A2
(en)
|
2003-02-19 |
2004-09-02 |
The Trustees Of Columbia University In The City Of New York |
System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
|
|
JP4116465B2
(ja)
|
2003-02-20 |
2008-07-09 |
株式会社日立製作所 |
パネル型表示装置とその製造方法および製造装置
|
|
JP4583004B2
(ja)
*
|
2003-05-21 |
2010-11-17 |
株式会社 日立ディスプレイズ |
アクティブ・マトリクス基板の製造方法
|
|
JP2004363241A
(ja)
*
|
2003-06-03 |
2004-12-24 |
Advanced Lcd Technologies Development Center Co Ltd |
結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法
|
|
KR20060059891A
(ko)
*
|
2003-06-04 |
2006-06-02 |
유명철 |
수직 구조 화합물 반도체 디바이스의 제조 방법
|
|
JP2005045209A
(ja)
*
|
2003-07-09 |
2005-02-17 |
Mitsubishi Electric Corp |
レーザアニール方法
|
|
US7164152B2
(en)
|
2003-09-16 |
2007-01-16 |
The Trustees Of Columbia University In The City Of New York |
Laser-irradiated thin films having variable thickness
|
|
TWI359441B
(en)
|
2003-09-16 |
2012-03-01 |
Univ Columbia |
Processes and systems for laser crystallization pr
|
|
WO2005029546A2
(en)
|
2003-09-16 |
2005-03-31 |
The Trustees Of Columbia University In The City Of New York |
Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
|
|
US7364952B2
(en)
*
|
2003-09-16 |
2008-04-29 |
The Trustees Of Columbia University In The City Of New York |
Systems and methods for processing thin films
|
|
WO2005029548A2
(en)
*
|
2003-09-16 |
2005-03-31 |
The Trustees Of Columbia University In The City Of New York |
System and process for providing multiple beam sequential lateral solidification
|
|
US7318866B2
(en)
|
2003-09-16 |
2008-01-15 |
The Trustees Of Columbia University In The City Of New York |
Systems and methods for inducing crystallization of thin films using multiple optical paths
|
|
WO2005029547A2
(en)
|
2003-09-16 |
2005-03-31 |
The Trustees Of Columbia University In The City Of New York |
Enhancing the width of polycrystalline grains with mask
|
|
WO2005029549A2
(en)
|
2003-09-16 |
2005-03-31 |
The Trustees Of Columbia University In The City Of New York |
Method and system for facilitating bi-directional growth
|
|
US7311778B2
(en)
|
2003-09-19 |
2007-12-25 |
The Trustees Of Columbia University In The City Of New York |
Single scan irradiation for crystallization of thin films
|
|
JP4413569B2
(ja)
*
|
2003-09-25 |
2010-02-10 |
株式会社 日立ディスプレイズ |
表示パネルの製造方法及び表示パネル
|
|
JP2005217209A
(ja)
*
|
2004-01-30 |
2005-08-11 |
Hitachi Ltd |
レーザアニール方法およびレーザアニール装置
|
|
KR101254539B1
(ko)
*
|
2004-04-28 |
2013-04-19 |
버티클 인코퍼레이티드 |
수직 구조 반도체 장치
|
|
TWI433343B
(zh)
*
|
2004-06-22 |
2014-04-01 |
維帝克股份有限公司 |
具有改良光輸出的垂直構造半導體裝置
|
|
JP2006024735A
(ja)
*
|
2004-07-08 |
2006-01-26 |
Seiko Instruments Inc |
半導体膜の結晶化方法、及び、表示装置の製造方法
|
|
TWI389334B
(zh)
*
|
2004-11-15 |
2013-03-11 |
維帝克股份有限公司 |
製造及分離半導體裝置之方法
|
|
US7645337B2
(en)
|
2004-11-18 |
2010-01-12 |
The Trustees Of Columbia University In The City Of New York |
Systems and methods for creating crystallographic-orientation controlled poly-silicon films
|
|
JP2006278532A
(ja)
*
|
2005-03-28 |
2006-10-12 |
Toshiba Corp |
熱処理方法及び半導体装置の製造方法
|
|
US8221544B2
(en)
|
2005-04-06 |
2012-07-17 |
The Trustees Of Columbia University In The City Of New York |
Line scan sequential lateral solidification of thin films
|
|
TWI389316B
(zh)
*
|
2005-09-08 |
2013-03-11 |
Sharp Kk |
薄膜電晶體、半導體裝置、顯示器、結晶化方法及製造薄膜電晶體方法
|
|
JP4855745B2
(ja)
|
2005-09-27 |
2012-01-18 |
株式会社 日立ディスプレイズ |
表示装置の製造方法
|
|
JP5128767B2
(ja)
*
|
2005-11-14 |
2013-01-23 |
株式会社ジャパンディスプレイイースト |
表示装置とその製造方法
|
|
US7829909B2
(en)
*
|
2005-11-15 |
2010-11-09 |
Verticle, Inc. |
Light emitting diodes and fabrication methods thereof
|
|
JP2007142027A
(ja)
*
|
2005-11-16 |
2007-06-07 |
Hitachi Displays Ltd |
表示装置の製造方法
|
|
JP2007142167A
(ja)
*
|
2005-11-18 |
2007-06-07 |
Hitachi Displays Ltd |
表示装置およびその製造方法
|
|
US20070117287A1
(en)
*
|
2005-11-23 |
2007-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Laser irradiation apparatus
|
|
JP2009518864A
(ja)
|
2005-12-05 |
2009-05-07 |
ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク |
膜を加工するためのシステム及び方法並びに薄膜
|
|
JP2008004666A
(ja)
*
|
2006-06-21 |
2008-01-10 |
Ftl:Kk |
3次元半導体デバイスの製造方法
|
|
JP2008053396A
(ja)
*
|
2006-08-24 |
2008-03-06 |
Hitachi Displays Ltd |
表示装置の製造方法
|
|
TWI479660B
(zh)
*
|
2006-08-31 |
2015-04-01 |
半導體能源研究所股份有限公司 |
薄膜電晶體,其製造方法,及半導體裝置
|
|
US20080070423A1
(en)
*
|
2006-09-15 |
2008-03-20 |
Crowder Mark A |
Buried seed one-shot interlevel crystallization
|
|
JP5005302B2
(ja)
|
2006-09-19 |
2012-08-22 |
株式会社ジャパンディスプレイイースト |
表示装置の製造方法
|
|
JP2008085053A
(ja)
*
|
2006-09-27 |
2008-04-10 |
Hitachi Displays Ltd |
表示装置の製造方法および表示装置
|
|
KR101397567B1
(ko)
*
|
2007-01-24 |
2014-05-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체막의 결정화 방법 및 반도체장치의 제작방법
|
|
JP4411331B2
(ja)
*
|
2007-03-19 |
2010-02-10 |
信越化学工業株式会社 |
磁気記録媒体用シリコン基板およびその製造方法
|
|
US8441018B2
(en)
|
2007-08-16 |
2013-05-14 |
The Trustees Of Columbia University In The City Of New York |
Direct bandgap substrates and methods of making and using
|
|
JP2009070861A
(ja)
*
|
2007-09-11 |
2009-04-02 |
Hitachi Displays Ltd |
表示装置
|
|
US8614471B2
(en)
|
2007-09-21 |
2013-12-24 |
The Trustees Of Columbia University In The City Of New York |
Collections of laterally crystallized semiconductor islands for use in thin film transistors
|
|
JP5385289B2
(ja)
|
2007-09-25 |
2014-01-08 |
ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク |
横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
|
|
WO2009067688A1
(en)
|
2007-11-21 |
2009-05-28 |
The Trustees Of Columbia University In The City Of New York |
Systems and methods for preparing epitaxially textured polycrystalline films
|
|
KR20100105606A
(ko)
|
2007-11-21 |
2010-09-29 |
더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 |
에피택셜하게 텍스쳐화된 후막의 제조를 위한 시스템 및 방법
|
|
US8012861B2
(en)
|
2007-11-21 |
2011-09-06 |
The Trustees Of Columbia University In The City Of New York |
Systems and methods for preparing epitaxially textured polycrystalline films
|
|
WO2009111340A2
(en)
|
2008-02-29 |
2009-09-11 |
The Trustees Of Columbia University In The City Of New York |
Flash lamp annealing crystallization for large area thin films
|
|
WO2009110872A2
(en)
*
|
2008-03-06 |
2009-09-11 |
Amit Goyal |
Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates
|
|
US8802580B2
(en)
|
2008-11-14 |
2014-08-12 |
The Trustees Of Columbia University In The City Of New York |
Systems and methods for the crystallization of thin films
|
|
EP2239084A1
(en)
*
|
2009-04-07 |
2010-10-13 |
Excico France |
Method of and apparatus for irradiating a semiconductor material surface by laser energy
|
|
TW201037769A
(en)
*
|
2009-04-09 |
2010-10-16 |
Chunghwa Picture Tubes Ltd |
Thin film transistor and manufacturing method thereof
|
|
FR2946335B1
(fr)
*
|
2009-06-05 |
2011-09-02 |
Saint Gobain |
Procede de depot de couche mince et produit obtenu.
|
|
US9087696B2
(en)
|
2009-11-03 |
2015-07-21 |
The Trustees Of Columbia University In The City Of New York |
Systems and methods for non-periodic pulse partial melt film processing
|
|
US8440581B2
(en)
|
2009-11-24 |
2013-05-14 |
The Trustees Of Columbia University In The City Of New York |
Systems and methods for non-periodic pulse sequential lateral solidification
|
|
US9646831B2
(en)
|
2009-11-03 |
2017-05-09 |
The Trustees Of Columbia University In The City Of New York |
Advanced excimer laser annealing for thin films
|
|
WO2013031198A1
(ja)
|
2011-08-30 |
2013-03-07 |
パナソニック株式会社 |
薄膜形成基板の製造方法、薄膜素子基板の製造方法、薄膜基板及び薄膜素子基板
|
|
US9111803B2
(en)
|
2011-10-03 |
2015-08-18 |
Joled Inc. |
Thin-film device, thin-film device array, and method of manufacturing thin-film device
|
|
CN113056821B
(zh)
|
2018-11-20 |
2025-03-25 |
美光科技公司 |
具有半导体氧化物沟道材料的集成组合件和形成集成组合件的方法
|
|
KR102688603B1
(ko)
|
2019-07-30 |
2024-07-25 |
삼성디스플레이 주식회사 |
레이저 결정화 장치 및 이를 이용한 폴리실리콘층을 갖는 기판 제조방법
|
|
US10964811B2
(en)
|
2019-08-09 |
2021-03-30 |
Micron Technology, Inc. |
Transistor and methods of forming transistors
|
|
US11024736B2
(en)
|
2019-08-09 |
2021-06-01 |
Micron Technology, Inc. |
Transistor and methods of forming integrated circuitry
|
|
KR102748031B1
(ko)
|
2019-08-09 |
2024-12-31 |
마이크론 테크놀로지, 인크 |
트랜지스터 및 트랜지스터의 형성 방법
|
|
KR20210070417A
(ko)
|
2019-12-04 |
2021-06-15 |
삼성디스플레이 주식회사 |
표시 장치
|
|
US11637175B2
(en)
*
|
2020-12-09 |
2023-04-25 |
Micron Technology, Inc. |
Vertical transistors
|