FR2844920B1 - Transistor a couche mince de silicium et son procede de fabrication - Google Patents

Transistor a couche mince de silicium et son procede de fabrication

Info

Publication number
FR2844920B1
FR2844920B1 FR0211793A FR0211793A FR2844920B1 FR 2844920 B1 FR2844920 B1 FR 2844920B1 FR 0211793 A FR0211793 A FR 0211793A FR 0211793 A FR0211793 A FR 0211793A FR 2844920 B1 FR2844920 B1 FR 2844920B1
Authority
FR
France
Prior art keywords
manufacturing
thin film
same
film transistor
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0211793A
Other languages
English (en)
Other versions
FR2844920A1 (fr
Inventor
Brahim Dahmani
Guillaume Guzman
Sonia Mechken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Priority to FR0211793A priority Critical patent/FR2844920B1/fr
Priority to US10/668,877 priority patent/US20040132235A1/en
Priority to AU2003277166A priority patent/AU2003277166A1/en
Priority to CNA038225212A priority patent/CN1685521A/zh
Priority to PCT/US2003/031011 priority patent/WO2004042827A1/fr
Priority to TW092126493A priority patent/TW200512941A/zh
Priority to KR1020057005000A priority patent/KR20050043987A/ko
Priority to EP03810766A priority patent/EP1550165A1/fr
Priority to JP2004549982A priority patent/JP2006517727A/ja
Publication of FR2844920A1 publication Critical patent/FR2844920A1/fr
Application granted granted Critical
Publication of FR2844920B1 publication Critical patent/FR2844920B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
FR0211793A 2002-09-24 2002-09-24 Transistor a couche mince de silicium et son procede de fabrication Expired - Fee Related FR2844920B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0211793A FR2844920B1 (fr) 2002-09-24 2002-09-24 Transistor a couche mince de silicium et son procede de fabrication
US10/668,877 US20040132235A1 (en) 2002-09-24 2003-09-23 Silicon thin film transistor, a method of manufacture, and a display screen
CNA038225212A CN1685521A (zh) 2002-09-24 2003-09-24 硅薄膜晶体管及其制造方法以及显示屏
PCT/US2003/031011 WO2004042827A1 (fr) 2002-09-24 2003-09-24 Transistor a couches minces en silicium, procede de fabrication et ecran d'affichage
AU2003277166A AU2003277166A1 (en) 2002-09-24 2003-09-24 A silicon thin film transistor, a method of manufacture, and a display screen
TW092126493A TW200512941A (en) 2002-09-24 2003-09-24 A silicon thin film transistor, a method of manufacture, & a display screen
KR1020057005000A KR20050043987A (ko) 2002-09-24 2003-09-24 실리콘 박막 트랜지스터, 제조방법, 및 디스플레이 스크린
EP03810766A EP1550165A1 (fr) 2002-09-24 2003-09-24 Transistor a couches minces en silicium, procede de fabrication et ecran d'affichage
JP2004549982A JP2006517727A (ja) 2002-09-24 2003-09-24 シリコン薄膜トランジスタ、その製造方法、およびそれを含むディスプレイスクリーン

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0211793A FR2844920B1 (fr) 2002-09-24 2002-09-24 Transistor a couche mince de silicium et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2844920A1 FR2844920A1 (fr) 2004-03-26
FR2844920B1 true FR2844920B1 (fr) 2005-08-26

Family

ID=31970938

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0211793A Expired - Fee Related FR2844920B1 (fr) 2002-09-24 2002-09-24 Transistor a couche mince de silicium et son procede de fabrication

Country Status (9)

Country Link
US (1) US20040132235A1 (fr)
EP (1) EP1550165A1 (fr)
JP (1) JP2006517727A (fr)
KR (1) KR20050043987A (fr)
CN (1) CN1685521A (fr)
AU (1) AU2003277166A1 (fr)
FR (1) FR2844920B1 (fr)
TW (1) TW200512941A (fr)
WO (1) WO2004042827A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2870989B1 (fr) * 2004-05-27 2006-08-04 Commissariat Energie Atomique Substrat pour application electronique, comprenant un support flexible et son procede de fabrication
TWI279848B (en) * 2004-11-04 2007-04-21 Ind Tech Res Inst Structure and method for forming a heat-prevented layer on plastic substrate
JP5525845B2 (ja) * 2010-02-08 2014-06-18 富士フイルム株式会社 半導体装置およびその製造方法
US20110193103A1 (en) * 2010-02-08 2011-08-11 Fujifilm Corporation Semiconductor device, method for producing the semiconductor device, substrate for semiconductor element and method for producing the substrate
KR102049568B1 (ko) 2013-04-01 2019-11-27 삼성전자주식회사 히알루론산을 포함하는 핵산전달용 조성물
CN104465667A (zh) * 2014-12-01 2015-03-25 京东方科技集团股份有限公司 一种柔性面板、其制备方法及柔性显示器件
US10529566B2 (en) * 2017-05-12 2020-01-07 HKC Corporation Limited Display panel and manufacturing method of display panel
CN107195636B (zh) * 2017-05-12 2020-08-18 惠科股份有限公司 显示面板、显示面板的制程和显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825245A (ja) * 1981-07-23 1983-02-15 Clarion Co Ltd 半導体集積回路およびその製法
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process
US5108843A (en) * 1988-11-30 1992-04-28 Ricoh Company, Ltd. Thin film semiconductor and process for producing the same
US6337232B1 (en) * 1995-06-07 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
JP2001122611A (ja) * 1999-10-22 2001-05-08 Asahi Kasei Corp 多孔性シリカ薄膜
US6602767B2 (en) * 2000-01-27 2003-08-05 Canon Kabushiki Kaisha Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置

Also Published As

Publication number Publication date
JP2006517727A (ja) 2006-07-27
EP1550165A1 (fr) 2005-07-06
FR2844920A1 (fr) 2004-03-26
AU2003277166A1 (en) 2004-06-07
KR20050043987A (ko) 2005-05-11
CN1685521A (zh) 2005-10-19
US20040132235A1 (en) 2004-07-08
TW200512941A (en) 2005-04-01
WO2004042827A1 (fr) 2004-05-21

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20060531