JP4732713B2 - 放電ランプ - Google Patents
放電ランプ Download PDFInfo
- Publication number
- JP4732713B2 JP4732713B2 JP2004172825A JP2004172825A JP4732713B2 JP 4732713 B2 JP4732713 B2 JP 4732713B2 JP 2004172825 A JP2004172825 A JP 2004172825A JP 2004172825 A JP2004172825 A JP 2004172825A JP 4732713 B2 JP4732713 B2 JP 4732713B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- fluorescent material
- discharge lamp
- phosphor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/38—Devices for influencing the colour or wavelength of the light
- H01J61/42—Devices for influencing the colour or wavelength of the light by transforming the wavelength of the light by luminescence
- H01J61/44—Devices characterised by the luminescent material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
- Luminescent Compositions (AREA)
Description
赤色蛍光物質成分(Y0.72Gd0.2Eu0.08)BO3、
緑色蛍光物質成分(La0.43Ce0.39Tb0.18)PO4、
青色系物質成分(Ba0.94Eu0.06)MgAl10O17
である。放電媒体としてはランプの内部には希ガスキセノンが存在する。ランプ動作中には放電媒体は200nmより短い波長を有する放射を放出し、この放射は白色光蛍光物質混合物によって白色光に変換される。
A) (Y,Gd,Tb)AG:Ce
が適している。
B) BaMgAl10O17:Eu
C) SrMgAl10O17:Eu
D) (Ba,Sr)MgAl10O17:Eu
が適している。
2、2’ 放電容器
3a、3b、3a’、3b’ 電極
4 「内側の」蛍光物質層
5 「外側の」蛍光物質層
6 「内側の」蛍光物質層
7 「外側の」蛍光物質層
Claims (9)
- 放電ランプ(1;1’)であって、
放電容器(2;2’)を有し、
放電媒体を有し、該放電媒体は前記放電容器(2;2’)の内部に存在し、ランプの動作中にはVUV領域の電磁放射を放出し、
蛍光物質(4−7)を有し、該蛍光物質(4−7)は前記放電容器(2;2’)の壁面に塗付されている、放電ランプ(1;1’)において、
前記蛍光物質(4−7)は黄色蛍光物質成分及び青色蛍光物質成分から成っており、当該両方の蛍光物質成分はそれぞれ別個の蛍光物質層に、すなわち黄色蛍光物質層(5;6)及び青色蛍光物質層(4;7)として塗付されており、前記蛍光物質層(4;5)は、放電媒体から見てまず最初に黄色蛍光物質層(5)、その後で青色蛍光物質層(4)がくる順番で配置されていることを特徴とする、放電ランプ(1;1’)。 - 両方の蛍光物質層(4;5)は放電容器(2)の壁面の内側に塗付されており、より詳しく言うと黄色蛍光物質層(5)の下に青色蛍光物質層(4)が塗付されている、請求項1記載の放電ランプ。
- 両方の蛍光物質層(6;7)は放電容器(2)の壁面の内側に塗付されており、より詳しく言うと青色蛍光物質層(7)の下に黄色蛍光物質層(6)が塗付されており、青色蛍光物質層(7)の厚さは、黄色蛍光物質層(6)が前記青色蛍光物質層(7)によって実質的に完全にVUV放射から遮蔽されるように選択されている、請求項1記載の放電ランプ。
- 黄色蛍光物質成分
(Y,Gd,Tb)AG:Ce
を有する、請求項1〜3のうちの1項記載の放電ランプ。 - 青色蛍光物質成分
BaMgAl10O17:Eu
を有する、請求項1〜4のうちの1項記載の放電ランプ。 - 青色蛍光物質成分
SrMgAl10O17:Eu
を有する、請求項1〜4のうちの1項記載の放電ランプ。 - 青色蛍光物質成分
(Ba,Sr)MgAl10O17:Eu
を有する、請求項1〜4のうちの1項記載の放電ランプ。 - 放電媒体は希ガスキセノンを含む、請求項1〜7のうちの1項記載の放電ランプ。
- 誘電体バリア放電ランプとして設計されている、請求項1〜8のうちの1項記載の放電ランプ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10326755A DE10326755A1 (de) | 2003-06-13 | 2003-06-13 | Entladungslampe mit Zweibanden-Leuchtstoff |
DE10326755.7 | 2003-06-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005005268A JP2005005268A (ja) | 2005-01-06 |
JP4732713B2 true JP4732713B2 (ja) | 2011-07-27 |
Family
ID=33394825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004172825A Expired - Fee Related JP4732713B2 (ja) | 2003-06-13 | 2004-06-10 | 放電ランプ |
Country Status (8)
Country | Link |
---|---|
US (1) | US7199513B2 (ja) |
EP (1) | EP1491611B1 (ja) |
JP (1) | JP4732713B2 (ja) |
KR (1) | KR101078174B1 (ja) |
CN (1) | CN100431091C (ja) |
CA (1) | CA2470301C (ja) |
DE (2) | DE10326755A1 (ja) |
TW (1) | TWI288944B (ja) |
Families Citing this family (241)
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DE10324832A1 (de) * | 2003-06-02 | 2004-12-23 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Entladungslampe mit Leuchtstoff |
EP2022079A2 (en) * | 2006-05-01 | 2009-02-11 | Koninklijke Philips Electronics N.V. | Low-pressure discharge lamp |
JP5274947B2 (ja) * | 2008-09-17 | 2013-08-28 | 三菱電機照明株式会社 | 蛍光ランプ |
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- 2004-04-27 TW TW093111723A patent/TWI288944B/zh not_active IP Right Cessation
- 2004-06-02 US US10/858,202 patent/US7199513B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
US20040251807A1 (en) | 2004-12-16 |
EP1491611B1 (de) | 2007-07-04 |
TWI288944B (en) | 2007-10-21 |
DE502004004226D1 (de) | 2007-08-16 |
DE10326755A1 (de) | 2006-01-26 |
CN1574193A (zh) | 2005-02-02 |
CA2470301C (en) | 2013-03-26 |
CN100431091C (zh) | 2008-11-05 |
JP2005005268A (ja) | 2005-01-06 |
US7199513B2 (en) | 2007-04-03 |
KR20040107403A (ko) | 2004-12-20 |
EP1491611A3 (de) | 2005-04-06 |
TW200504786A (en) | 2005-02-01 |
KR101078174B1 (ko) | 2011-10-28 |
CA2470301A1 (en) | 2004-12-13 |
EP1491611A2 (de) | 2004-12-29 |
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