JP4725739B2 - フォトレジストポリマー組成物 - Google Patents
フォトレジストポリマー組成物 Download PDFInfo
- Publication number
- JP4725739B2 JP4725739B2 JP2006517641A JP2006517641A JP4725739B2 JP 4725739 B2 JP4725739 B2 JP 4725739B2 JP 2006517641 A JP2006517641 A JP 2006517641A JP 2006517641 A JP2006517641 A JP 2006517641A JP 4725739 B2 JP4725739 B2 JP 4725739B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- polymer
- photoresist composition
- substituted
- hydrocarbyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/12—Esters of monohydric alcohols or phenols
- C08F20/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F20/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1812—C12-(meth)acrylate, e.g. lauryl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polymerisation Methods In General (AREA)
- Polymerization Catalysts (AREA)
- Supporting Of Heads In Record-Carrier Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48331003P | 2003-06-26 | 2003-06-26 | |
| US60/483,310 | 2003-06-26 | ||
| PCT/US2004/020351 WO2005003198A1 (en) | 2003-06-26 | 2004-06-25 | Photoresist polymer compositions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007526496A JP2007526496A (ja) | 2007-09-13 |
| JP2007526496A5 JP2007526496A5 (enExample) | 2010-06-24 |
| JP4725739B2 true JP4725739B2 (ja) | 2011-07-13 |
Family
ID=33563916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006517641A Expired - Lifetime JP4725739B2 (ja) | 2003-06-26 | 2004-06-25 | フォトレジストポリマー組成物 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7510817B2 (enExample) |
| EP (1) | EP1641848B1 (enExample) |
| JP (1) | JP4725739B2 (enExample) |
| KR (1) | KR101057570B1 (enExample) |
| CN (1) | CN100549051C (enExample) |
| AT (1) | ATE370975T1 (enExample) |
| DE (1) | DE602004008468T2 (enExample) |
| TW (1) | TWI358609B (enExample) |
| WO (1) | WO2005003198A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101498903B1 (ko) * | 2012-08-31 | 2015-03-05 | 다우 글로벌 테크놀로지스 엘엘씨 | 포토애시드 발생제를 함유하는 말단 그룹을 포함하는 폴리머, 그 폴리머를 포함하는 포토레지스트, 및 장치의 제조방법 |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004061525A1 (ja) * | 2002-12-28 | 2004-07-22 | Jsr Corporation | 感放射線性樹脂組成物 |
| JP2007522262A (ja) * | 2003-06-26 | 2007-08-09 | シミックス・テクノロジーズ・インコーポレイテッド | フォトレジストポリマー |
| KR101057570B1 (ko) | 2003-06-26 | 2011-08-17 | 제이에스알 가부시끼가이샤 | 포토레지스트 중합체 조성물 |
| US7250475B2 (en) | 2003-06-26 | 2007-07-31 | Symyx Technologies, Inc. | Synthesis of photoresist polymers |
| US7696292B2 (en) | 2003-09-22 | 2010-04-13 | Commonwealth Scientific And Industrial Research Organisation | Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography |
| TWI471699B (zh) | 2005-03-04 | 2015-02-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
| JP4961707B2 (ja) * | 2005-09-29 | 2012-06-27 | Jsr株式会社 | 樹脂の合成法 |
| US7424818B2 (en) * | 2005-10-20 | 2008-09-16 | Boeing Company | Ultrasonic inspection reference standard for porous composite materials |
| US7694546B2 (en) * | 2005-11-17 | 2010-04-13 | The Boeing Company | Porosity reference standard utilizing one or more hollow, non-cylindrical shafts |
| US7752882B2 (en) | 2005-11-17 | 2010-07-13 | The Boeing Company | Porosity reference standard utilizing a mesh |
| US7762120B2 (en) * | 2005-12-01 | 2010-07-27 | The Boeing Company | Tapered ultrasonic reference standard |
| JP4881687B2 (ja) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4881686B2 (ja) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| US7770457B2 (en) * | 2006-10-13 | 2010-08-10 | The Boeing Company | Pseudo porosity reference standard for metallic interleaved composite laminates |
| US7617714B2 (en) * | 2006-12-06 | 2009-11-17 | The Boeing Company | Pseudo porosity reference standard for cored composite laminates |
| US7617715B2 (en) * | 2006-12-21 | 2009-11-17 | The Boeing Company | Reference standard for ultrasonic measurement of porosity and related method |
| US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
| US8530148B2 (en) * | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
| JP5162290B2 (ja) * | 2007-03-23 | 2013-03-13 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
| US7635554B2 (en) | 2007-03-28 | 2009-12-22 | Fujifilm Corporation | Positive resist composition and pattern forming method |
| JP4621754B2 (ja) | 2007-03-28 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
| EP1975714A1 (en) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method |
| US8182975B2 (en) | 2007-03-28 | 2012-05-22 | Fujifilm Corporation | Positive resist composition and pattern forming method using the same |
| KR100990106B1 (ko) | 2007-04-13 | 2010-10-29 | 후지필름 가부시키가이샤 | 패턴형성방법, 이 패턴형성방법에 사용되는 레지스트 조성물, 현상액 및 린스액 |
| JP4982288B2 (ja) * | 2007-04-13 | 2012-07-25 | 富士フイルム株式会社 | パターン形成方法 |
| US8034547B2 (en) * | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
| US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
| JP4558064B2 (ja) | 2007-05-15 | 2010-10-06 | 富士フイルム株式会社 | パターン形成方法 |
| US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
| WO2008153109A1 (ja) * | 2007-06-12 | 2008-12-18 | Fujifilm Corporation | ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法 |
| JP4590431B2 (ja) * | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
| KR20130114280A (ko) | 2007-06-12 | 2013-10-16 | 후지필름 가부시키가이샤 | 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
| JP4617337B2 (ja) * | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
| US8632942B2 (en) | 2007-06-12 | 2014-01-21 | Fujifilm Corporation | Method of forming patterns |
| US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
| US8029644B2 (en) * | 2007-11-15 | 2011-10-04 | The Beoing Company | Controlled temperature scrap removal for tape process |
| US8541511B2 (en) * | 2008-07-07 | 2013-09-24 | Arkema Inc. | Amphiphilic block copolymer formulations |
| US9244352B2 (en) * | 2009-05-20 | 2016-01-26 | Rohm And Haas Electronic Materials, Llc | Coating compositions for use with an overcoated photoresist |
| JP5634115B2 (ja) * | 2009-06-17 | 2014-12-03 | 富士フイルム株式会社 | パターン形成方法、化学増幅型レジスト組成物及びレジスト膜 |
| JP5520590B2 (ja) * | 2009-10-06 | 2014-06-11 | 富士フイルム株式会社 | パターン形成方法、化学増幅型レジスト組成物及びレジスト膜 |
| CN103619889B (zh) | 2011-05-30 | 2015-10-07 | 三菱丽阳株式会社 | 聚合物及其制造方法 |
| JP2013129649A (ja) * | 2011-11-22 | 2013-07-04 | Central Glass Co Ltd | 珪素化合物、縮合物およびそれを用いたレジスト組成物、ならびにそれを用いるパターン形成方法 |
| JP6283477B2 (ja) | 2012-06-25 | 2018-02-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | アミド成分を含むフォトレジスト |
| JP5937549B2 (ja) | 2012-08-31 | 2016-06-22 | ダウ グローバル テクノロジーズ エルエルシー | 光酸発生剤化合物、光酸発生剤化合物を含有する末端基を含むポリマー、および製造方法 |
| US9017934B2 (en) | 2013-03-08 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist defect reduction system and method |
| US9502231B2 (en) | 2013-03-12 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer and method |
| US9354521B2 (en) | 2013-03-12 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US8932799B2 (en) | 2013-03-12 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
| US9245751B2 (en) | 2013-03-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective layer and method |
| US9110376B2 (en) | 2013-03-12 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9256128B2 (en) | 2013-03-12 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing semiconductor device |
| US9175173B2 (en) | 2013-03-12 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Unlocking layer and method |
| US9117881B2 (en) | 2013-03-15 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive line system and process |
| US9341945B2 (en) | 2013-08-22 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of formation and use |
| US10036953B2 (en) | 2013-11-08 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company | Photoresist system and method |
| US10095113B2 (en) | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
| US9761449B2 (en) | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
| US9599896B2 (en) | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9581908B2 (en) | 2014-05-16 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method |
| US9696624B2 (en) * | 2015-07-29 | 2017-07-04 | Rohm And Haas Electronic Materials Llc | Nanoparticle-polymer resists |
| JP6883291B2 (ja) * | 2015-08-24 | 2021-06-09 | 学校法人 関西大学 | リソグラフィー用材料及びその製造方法、リソグラフィー用組成物、パターン形成方法、並びに、化合物、樹脂、及びこれらの精製方法 |
| KR102742120B1 (ko) * | 2018-03-19 | 2024-12-16 | 주식회사 다이셀 | 포토레지스트용 수지, 포토레지스트용 수지의 제조 방법, 포토레지스트용 수지 조성물 및 패턴 형성 방법 |
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2004
- 2004-06-25 KR KR1020057024783A patent/KR101057570B1/ko not_active Expired - Lifetime
- 2004-06-25 WO PCT/US2004/020351 patent/WO2005003198A1/en not_active Ceased
- 2004-06-25 TW TW093118645A patent/TWI358609B/zh not_active IP Right Cessation
- 2004-06-25 JP JP2006517641A patent/JP4725739B2/ja not_active Expired - Lifetime
- 2004-06-25 CN CNB2004800224609A patent/CN100549051C/zh not_active Expired - Fee Related
- 2004-06-25 DE DE602004008468T patent/DE602004008468T2/de not_active Expired - Lifetime
- 2004-06-25 AT AT04756066T patent/ATE370975T1/de not_active IP Right Cessation
- 2004-06-25 EP EP04756066A patent/EP1641848B1/en not_active Expired - Lifetime
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101498903B1 (ko) * | 2012-08-31 | 2015-03-05 | 다우 글로벌 테크놀로지스 엘엘씨 | 포토애시드 발생제를 함유하는 말단 그룹을 포함하는 폴리머, 그 폴리머를 포함하는 포토레지스트, 및 장치의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| ATE370975T1 (de) | 2007-09-15 |
| TWI358609B (en) | 2012-02-21 |
| WO2005003198A1 (en) | 2005-01-13 |
| DE602004008468T2 (de) | 2008-05-21 |
| US7510817B2 (en) | 2009-03-31 |
| CN100549051C (zh) | 2009-10-14 |
| JP2007526496A (ja) | 2007-09-13 |
| KR20060088480A (ko) | 2006-08-04 |
| US20060257781A1 (en) | 2006-11-16 |
| EP1641848B1 (en) | 2007-08-22 |
| DE602004008468D1 (en) | 2007-10-04 |
| KR101057570B1 (ko) | 2011-08-17 |
| EP1641848A1 (en) | 2006-04-05 |
| CN1845941A (zh) | 2006-10-11 |
| TW200508795A (en) | 2005-03-01 |
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