TWI291953B - - Google Patents

Download PDF

Info

Publication number
TWI291953B
TWI291953B TW091122267A TW91122267A TWI291953B TW I291953 B TWI291953 B TW I291953B TW 091122267 A TW091122267 A TW 091122267A TW 91122267 A TW91122267 A TW 91122267A TW I291953 B TWI291953 B TW I291953B
Authority
TW
Taiwan
Prior art keywords
group
alkyl
carbon number
hydrogen atom
polymer
Prior art date
Application number
TW091122267A
Other languages
English (en)
Chinese (zh)
Inventor
Ansai Ryuichi
Yoshihiro Kamon
Tadayuki Fujiwara
Ootake Atsushi
Hikaru Momose
Original Assignee
Mitsubishi Rayon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Rayon Co filed Critical Mitsubishi Rayon Co
Application granted granted Critical
Publication of TWI291953B publication Critical patent/TWI291953B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/72—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/10—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings
    • C07D317/14—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings with substituted hydrocarbon radicals attached to ring carbon atoms
    • C07D317/18—Radicals substituted by singly bound oxygen or sulfur atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/10—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings
    • C07D317/32—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D317/34—Oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/10—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings
    • C07D317/32—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 not condensed with other rings with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D317/42—Halogen atoms or nitro radicals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F20/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F24/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Heterocyclic Compounds That Contain Two Or More Ring Oxygen Atoms (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
TW091122267A 2001-10-23 2002-09-27 TWI291953B (enExample)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001324824 2001-10-23
JP2002006354 2002-01-15
JP2002159847 2002-05-31
JP2002225066 2002-08-01

Publications (1)

Publication Number Publication Date
TWI291953B true TWI291953B (enExample) 2008-01-01

Family

ID=27482637

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091122267A TWI291953B (enExample) 2001-10-23 2002-09-27

Country Status (7)

Country Link
US (1) US7316884B2 (enExample)
EP (1) EP1447403B1 (enExample)
JP (2) JP4481005B2 (enExample)
KR (1) KR100943786B1 (enExample)
CN (2) CN100453539C (enExample)
TW (1) TWI291953B (enExample)
WO (1) WO2003035637A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005000924A1 (en) * 2003-06-26 2005-01-06 Symyx Technologies, Inc. Photoresist polymers
CN100549051C (zh) * 2003-06-26 2009-10-14 捷时雅株式会社 光刻胶聚合物组合物
US7250475B2 (en) * 2003-06-26 2007-07-31 Symyx Technologies, Inc. Synthesis of photoresist polymers
KR101020164B1 (ko) 2003-07-17 2011-03-08 허니웰 인터내셔날 인코포레이티드 진보된 마이크로전자적 응용을 위한 평탄화 막, 및 이를제조하기 위한 장치 및 방법
EP1637928B1 (en) 2004-09-15 2012-05-02 Dongjin Semichem Co., Ltd Photoresist monomer having spiro cyclic ketal group, polymer thereof and photoresist composition including the same
US8828651B2 (en) * 2005-07-25 2014-09-09 Nissan Chemical Industries, Ltd. Positive-type photosensitive resin composition and cured film manufactured therefrom
JP4762630B2 (ja) * 2005-08-03 2011-08-31 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4524237B2 (ja) * 2005-09-28 2010-08-11 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
KR20080068142A (ko) * 2005-11-21 2008-07-22 제이에스알 가부시끼가이샤 액침 노광 리소그래피 방법
JP5118622B2 (ja) * 2006-02-17 2013-01-16 株式会社クラレ 第3級アルコール誘導体、高分子化合物およびフォトレジスト組成物
US8771924B2 (en) * 2006-12-26 2014-07-08 Fujifilm Corporation Polymerizable composition, lithographic printing plate precursor and lithographic printing method
JP4882788B2 (ja) * 2007-02-21 2012-02-22 Jsr株式会社 感放射線性樹脂組成物、スペーサーとその製法および液晶表示素子
TWI481961B (zh) * 2007-08-10 2015-04-21 富士軟片股份有限公司 正型光阻組成物及使用該組成物之圖案形成方法
US8637623B2 (en) * 2008-02-25 2014-01-28 Daicel Chemical Industries, Ltd. Monomer having electron-withdrawing substituent and lactone skeleton, polymeric compound, and photoresist composition
JP5487784B2 (ja) * 2008-08-07 2014-05-07 住友化学株式会社 化学増幅型ポジ型レジスト組成物
EP2390274B1 (en) * 2009-01-26 2014-01-01 The University of Tokushima Polyfunctional polymer of high stereoregularity and method for producing the same
WO2012043685A1 (ja) * 2010-09-30 2012-04-05 Jsr株式会社 感放射線性樹脂組成物、重合体及び化合物
JP5947028B2 (ja) * 2010-12-02 2016-07-06 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC ポリマー、フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法
EP2472325A1 (en) * 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Polymers, photoresist compositions and methods of forming photolithographic patterns
EP2472326A1 (en) * 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Polymers, photoresist compositions and methods of forming photolithographic patterns
EP2472324A1 (en) 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns
JP6005932B2 (ja) * 2011-01-07 2016-10-12 住友化学株式会社 ポジ型レジスト組成物及びパターン形成方法
WO2012133352A1 (ja) * 2011-03-31 2012-10-04 Jsr株式会社 フォトレジスト組成物
WO2013047117A1 (ja) * 2011-09-29 2013-04-04 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法及び重合体
JP6232837B2 (ja) * 2012-08-31 2017-11-22 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US9256125B2 (en) 2013-03-30 2016-02-09 Rohm And Haas Electronic Materials, Llc Acid generators and photoresists comprising same
JP6327036B2 (ja) * 2013-07-24 2018-05-23 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体、化合物及び化合物の製造方法
JP6319001B2 (ja) * 2014-09-08 2018-05-09 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP6721823B2 (ja) * 2016-01-05 2020-07-15 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物
JP6969889B2 (ja) * 2016-05-13 2021-11-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6992166B2 (ja) * 2018-03-30 2022-01-13 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
CN112639620B (zh) * 2018-09-07 2024-09-10 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法、电子器件的制造方法
WO2020137918A1 (ja) * 2018-12-28 2020-07-02 富士フイルム株式会社 有機溶剤現像用ネガ型感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP2022129980A (ja) * 2021-02-25 2022-09-06 東京応化工業株式会社 化学増幅型ポジ型感光性組成物、感光性ドライフィルム、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法、及びめっき造形物の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU606313A1 (ru) 1970-03-11 1984-02-15 Предприятие П/Я М-5927 Способ получени замещенных 5-метилен-1,3-диоксолан-4-онов
JPS58176618A (ja) * 1982-04-10 1983-10-17 Toyo Contact Lens Co Ltd 含水性コンタクトレンズおよびその製造法
JPH0337214A (ja) * 1989-07-04 1991-02-18 Hitachi Chem Co Ltd 低収縮性ラジカル重合性熱硬化樹脂組成物
JP2881969B2 (ja) 1990-06-05 1999-04-12 富士通株式会社 放射線感光レジストとパターン形成方法
JP2867847B2 (ja) 1993-08-26 1999-03-10 株式会社クラレ 5−メチレン−1,3−ジオキソラン−4−オン類の製造方法
DE69409733T2 (de) * 1993-08-26 1998-11-19 Kuraray Co Verfahren zur Herstellung optisch aktiven 2-Norbornanons
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
KR100261022B1 (ko) 1996-10-11 2000-09-01 윤종용 화학증폭형 레지스트 조성물
JP3712218B2 (ja) 1997-01-24 2005-11-02 東京応化工業株式会社 化学増幅型ホトレジスト組成物
JP3546679B2 (ja) 1997-01-29 2004-07-28 住友化学工業株式会社 化学増幅型ポジ型レジスト組成物
JP3819531B2 (ja) 1997-05-20 2006-09-13 富士通株式会社 レジスト組成物及びレジストパターン形成方法
JPH10316609A (ja) 1997-05-20 1998-12-02 Kuraray Co Ltd 2−ヒドロキシ−5−ノルボルネン−2−カルボン酸の製造方法
KR100273172B1 (ko) * 1998-08-01 2001-03-02 윤덕용 아크릴 측쇄에 디옥사스피로환기 유도체를 갖는 화합물을 이용한 포토레지스트
GB2348879B (en) * 1999-04-16 2004-03-31 Hydron Ltd Process
JP2001089511A (ja) 1999-09-27 2001-04-03 Dainippon Ink & Chem Inc 活性エネルギー線硬化型樹脂組成物
TW538056B (en) 2000-07-11 2003-06-21 Samsung Electronics Co Ltd Resist composition comprising photosensitive polymer having lactone in its backbone
KR100749494B1 (ko) * 2001-04-03 2007-08-14 삼성에스디아이 주식회사 화학증폭형 네가티브 포토레지스트용 중합체 및 포토레지스트 조성물

Also Published As

Publication number Publication date
JPWO2003035637A1 (ja) 2005-02-10
JP4481005B2 (ja) 2010-06-16
KR20040058226A (ko) 2004-07-03
CN1737000B (zh) 2013-04-24
CN1413992A (zh) 2003-04-30
US7316884B2 (en) 2008-01-08
CN1737000A (zh) 2006-02-22
KR100943786B1 (ko) 2010-02-23
US20040248031A1 (en) 2004-12-09
WO2003035637A1 (fr) 2003-05-01
JP2010077440A (ja) 2010-04-08
CN100453539C (zh) 2009-01-21
JP5243390B2 (ja) 2013-07-24
EP1447403A4 (en) 2010-10-27
EP1447403B1 (en) 2016-02-03
EP1447403A1 (en) 2004-08-18

Similar Documents

Publication Publication Date Title
KR100943786B1 (ko) 5-메틸렌-1,3-디옥솔란-4-온 유도체, 그의 제조방법, 상기유도체를 중합하여 수득되는 중합체, 레지스트 조성물, 및패턴 형성 방법
KR101266054B1 (ko) 함불소 고분자 화합물, 레지스트 조성물 용액, 패턴 형성 방법, 탑코트 조성물, 탑코트 조성물 용액 및 함불소 불포화 카르본산에스테르
TW201239525A (en) Activating-light-sensitive or radiation-sensitive resin composition, activating-light-sensitive or radiation-sensitive film using the composition, and method for forming patterns
KR102015691B1 (ko) 헤미아세탈 화합물, 고분자 화합물, 레지스트 재료 및 패턴 형성 방법
TW201100965A (en) Positive resist composition and method of forming resist pattern
TW201039065A (en) Positive resist composition, method of forming resist pattern using the same, and polymeric compound
TW201003319A (en) Positive resist composition, method of forming resist pattern, and polymeric compound
TW201136954A (en) Polymer, resist composition, and patterning process
TW201027254A (en) Positive resist composition, method of forming resist pattern, and polymeric compound
TW201139364A (en) Fluorinated monomer, fluorinated polymer, resist composition, and patterning process
WO2010147079A1 (ja) 感放射線性樹脂組成物
TW201219424A (en) Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith
JP5354420B2 (ja) 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置
TW201124799A (en) Positive resist composition and method of forming resist pattern
TWI305291B (en) Novel compound, polymer, resist composition patterning process
TW200905382A (en) Chemically amplified resist composition
TW201245249A (en) Resist composition, method of forming resist pattern and polymeric compound
TWI301832B (en) Novel ester compounds, polymers, resist compositions and patterning process
JP3642316B2 (ja) 化学増幅レジスト用単量体、化学増幅レジスト用重合体、化学増幅レジスト組成物、パターン形成方法
TW201234106A (en) Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the composition, method of forming pattern, electronic device and fabricating thereof
WO2002046179A1 (en) (meth)acrylate esters, starting alcohols for the preparation thereof, processes for preparing both, polymers of the esters, chemically amplifiable resist compositions, and method for forming patterns
TW201227171A (en) Resin composition, and film and method of forming pattern using the composition
JP5001541B2 (ja) 半導体リソグラフィー用共重合体及び組成物
TWI242003B (en) Chemically amplified polymer having pendant group with dicyclohexyl and resist composition comprising the same
JP2008163056A (ja) ハイパーブランチポリマーの合成方法、ハイパーブランチポリマー、レジスト組成物、半導体集積回路、および半導体集積回路の製造方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent