JP4690417B2 - 半導体ウエハのダイシング方法及びダイシング装置 - Google Patents

半導体ウエハのダイシング方法及びダイシング装置 Download PDF

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Publication number
JP4690417B2
JP4690417B2 JP2007538353A JP2007538353A JP4690417B2 JP 4690417 B2 JP4690417 B2 JP 4690417B2 JP 2007538353 A JP2007538353 A JP 2007538353A JP 2007538353 A JP2007538353 A JP 2007538353A JP 4690417 B2 JP4690417 B2 JP 4690417B2
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Prior art keywords
dicing
semiconductor wafer
etching
die
wafer
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JP2008518450A (ja
JP2008518450A5 (https=
Inventor
ボイル、エイドリアン
ギレン、デビッド
ドューン、カリ
ゴメス、エバ フェルナンデス
トフネス、リチャード
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エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Dicing (AREA)
  • Weting (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
JP2007538353A 2004-11-01 2005-11-01 半導体ウエハのダイシング方法及びダイシング装置 Expired - Fee Related JP4690417B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0424195A GB2420443B (en) 2004-11-01 2004-11-01 Increasing die strength by etching during or after dicing
GB0424195.6 2004-11-01
PCT/EP2005/011671 WO2006048230A1 (en) 2004-11-01 2005-11-01 Increasing die strength by etching during or after dicing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010016318A Division JP2010147488A (ja) 2004-11-01 2010-01-28 ダイシング中あるいは後のエッチングによるダイ強度の増加

Publications (3)

Publication Number Publication Date
JP2008518450A JP2008518450A (ja) 2008-05-29
JP2008518450A5 JP2008518450A5 (https=) 2008-07-31
JP4690417B2 true JP4690417B2 (ja) 2011-06-01

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JP2007538353A Expired - Fee Related JP4690417B2 (ja) 2004-11-01 2005-11-01 半導体ウエハのダイシング方法及びダイシング装置
JP2010016318A Pending JP2010147488A (ja) 2004-11-01 2010-01-28 ダイシング中あるいは後のエッチングによるダイ強度の増加

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JP2010016318A Pending JP2010147488A (ja) 2004-11-01 2010-01-28 ダイシング中あるいは後のエッチングによるダイ強度の増加

Country Status (9)

Country Link
US (1) US20090191690A1 (https=)
EP (1) EP1825507B1 (https=)
JP (2) JP4690417B2 (https=)
KR (1) KR20070051360A (https=)
CN (1) CN101088157B (https=)
AT (1) ATE526681T1 (https=)
GB (1) GB2420443B (https=)
TW (1) TWI278032B (https=)
WO (1) WO2006048230A1 (https=)

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US9472458B2 (en) 2014-06-04 2016-10-18 Semiconductor Components Industries, Llc Method of reducing residual contamination in singulated semiconductor die
JP6282194B2 (ja) * 2014-07-30 2018-02-21 株式会社ディスコ ウェーハの加工方法
US9601437B2 (en) 2014-09-09 2017-03-21 Nxp B.V. Plasma etching and stealth dicing laser process
US9337098B1 (en) 2015-08-14 2016-05-10 Semiconductor Components Industries, Llc Semiconductor die back layer separation method
JP6587911B2 (ja) * 2015-11-16 2019-10-09 株式会社ディスコ ウエーハの分割方法
CN108630599A (zh) * 2017-03-22 2018-10-09 东莞新科技术研究开发有限公司 芯片的形成方法
US10373869B2 (en) 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
CN107579032B (zh) * 2017-07-27 2019-04-09 厦门市三安集成电路有限公司 一种化合物半导体器件的背面制程方法
JP7066263B2 (ja) * 2018-01-23 2022-05-13 株式会社ディスコ 加工方法、エッチング装置、及びレーザ加工装置
US10916474B2 (en) 2018-06-25 2021-02-09 Semiconductor Components Industries, Llc Method of reducing residual contamination in singulated semiconductor die
CN110634796A (zh) 2018-06-25 2019-12-31 半导体元件工业有限责任公司 用于处理电子管芯的方法及半导体晶圆和管芯的切单方法
JP7109862B2 (ja) * 2018-07-10 2022-08-01 株式会社ディスコ 半導体ウェーハの加工方法
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JP7296835B2 (ja) 2019-09-19 2023-06-23 株式会社ディスコ ウェーハの処理方法、及び、チップ測定装置

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Also Published As

Publication number Publication date
JP2010147488A (ja) 2010-07-01
GB2420443B (en) 2009-09-16
US20090191690A1 (en) 2009-07-30
TW200625435A (en) 2006-07-16
KR20070051360A (ko) 2007-05-17
JP2008518450A (ja) 2008-05-29
TWI278032B (en) 2007-04-01
CN101088157B (zh) 2010-06-23
CN101088157A (zh) 2007-12-12
EP1825507A1 (en) 2007-08-29
ATE526681T1 (de) 2011-10-15
EP1825507B1 (en) 2011-09-28
WO2006048230A1 (en) 2006-05-11
GB2420443A (en) 2006-05-24
GB0424195D0 (en) 2004-12-01

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