TWI278032B - Increasing die strength by etching during or after dicing - Google Patents

Increasing die strength by etching during or after dicing Download PDF

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Publication number
TWI278032B
TWI278032B TW094138107A TW94138107A TWI278032B TW I278032 B TWI278032 B TW I278032B TW 094138107 A TW094138107 A TW 094138107A TW 94138107 A TW94138107 A TW 94138107A TW I278032 B TWI278032 B TW I278032B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
etching
wafer
carrier
dicing
Prior art date
Application number
TW094138107A
Other languages
English (en)
Chinese (zh)
Other versions
TW200625435A (en
Inventor
David Gillen
Adrian Boyle
Kali Dunne
Gomez Eva Fernandes
Richard Toftness
Original Assignee
Xsil Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xsil Technology Ltd filed Critical Xsil Technology Ltd
Publication of TW200625435A publication Critical patent/TW200625435A/zh
Application granted granted Critical
Publication of TWI278032B publication Critical patent/TWI278032B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Dicing (AREA)
  • Weting (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
TW094138107A 2004-11-01 2005-10-31 Increasing die strength by etching during or after dicing TWI278032B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0424195A GB2420443B (en) 2004-11-01 2004-11-01 Increasing die strength by etching during or after dicing

Publications (2)

Publication Number Publication Date
TW200625435A TW200625435A (en) 2006-07-16
TWI278032B true TWI278032B (en) 2007-04-01

Family

ID=33515886

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094138107A TWI278032B (en) 2004-11-01 2005-10-31 Increasing die strength by etching during or after dicing

Country Status (9)

Country Link
US (1) US20090191690A1 (https=)
EP (1) EP1825507B1 (https=)
JP (2) JP4690417B2 (https=)
KR (1) KR20070051360A (https=)
CN (1) CN101088157B (https=)
AT (1) ATE526681T1 (https=)
GB (1) GB2420443B (https=)
TW (1) TWI278032B (https=)
WO (1) WO2006048230A1 (https=)

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JP6282194B2 (ja) * 2014-07-30 2018-02-21 株式会社ディスコ ウェーハの加工方法
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JP6587911B2 (ja) * 2015-11-16 2019-10-09 株式会社ディスコ ウエーハの分割方法
CN108630599A (zh) * 2017-03-22 2018-10-09 东莞新科技术研究开发有限公司 芯片的形成方法
US10373869B2 (en) 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
CN107579032B (zh) * 2017-07-27 2019-04-09 厦门市三安集成电路有限公司 一种化合物半导体器件的背面制程方法
JP7066263B2 (ja) * 2018-01-23 2022-05-13 株式会社ディスコ 加工方法、エッチング装置、及びレーザ加工装置
US10916474B2 (en) 2018-06-25 2021-02-09 Semiconductor Components Industries, Llc Method of reducing residual contamination in singulated semiconductor die
CN110634796A (zh) 2018-06-25 2019-12-31 半导体元件工业有限责任公司 用于处理电子管芯的方法及半导体晶圆和管芯的切单方法
JP7109862B2 (ja) * 2018-07-10 2022-08-01 株式会社ディスコ 半導体ウェーハの加工方法
US11217550B2 (en) 2018-07-24 2022-01-04 Xilinx, Inc. Chip package assembly with enhanced interconnects and method for fabricating the same
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Also Published As

Publication number Publication date
JP2010147488A (ja) 2010-07-01
GB2420443B (en) 2009-09-16
US20090191690A1 (en) 2009-07-30
TW200625435A (en) 2006-07-16
KR20070051360A (ko) 2007-05-17
JP2008518450A (ja) 2008-05-29
JP4690417B2 (ja) 2011-06-01
CN101088157B (zh) 2010-06-23
CN101088157A (zh) 2007-12-12
EP1825507A1 (en) 2007-08-29
ATE526681T1 (de) 2011-10-15
EP1825507B1 (en) 2011-09-28
WO2006048230A1 (en) 2006-05-11
GB2420443A (en) 2006-05-24
GB0424195D0 (en) 2004-12-01

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