JP6587911B2 - ウエーハの分割方法 - Google Patents
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- 238000005520 cutting process Methods 0.000 claims description 68
- 230000001681 protective effect Effects 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 32
- 238000001312 dry etching Methods 0.000 claims description 26
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 17
- 238000003754 machining Methods 0.000 description 11
- 239000002390 adhesive tape Substances 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 238000004140 cleaning Methods 0.000 description 2
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- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- -1 Ar and He Chemical class 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 241001600434 Plectroglyphidodon lacrymatus Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
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Description
本発明に係るウエーハの分割方法においては、まず、デバイスDの上面(ウエーハWの表面W2a)を保護する保護膜W3(図4において図示)を形成する保護膜形成工程を実施する。
保護膜形成工程を実施した後、例えば、ウエーハWに対して吸収性を有する波長のレーザー光線を配線層W2側から照射して分割予定ラインSに沿って配線層W2を除去し加工溝M(図8において図示)を形成するレーザー加工溝形成工程を行う。
レーザー加工溝形成工程の実施後において、例えば、図8に示す加工溝Mをドライエッチングするドライエッチング工程を行う。本工程においては、加工溝Mにおける露出しているシリコン基板W1部分をエッチングしていくが、特に、加工溝Mにおいてシリコン基板W1で形成された側壁部分に対するエッチングが重要となる。
(条件A)
エッチングガス: SF6ガス
プラズマ支援ガス: Arガス
エッチングガス供給量:1500cc/分
プラズマ支援ガス供給量:1000cc/分
高周波電力の出力: 3kW
本実施形態においては、ドライエッチング工程を実施後、加工溝Mに沿って加工溝Mの最外幅Mwよりも幅が狭い図11に示す切削ブレード60をウエーハWに切り込ませウエーハWを完全切断する切削工程を実施する。水溶性樹脂を用いて保護膜W3を形成しているので、保護膜W3は切削工程において切削水により溶解しウエーハWから除去される。
W:ウエーハ W1:シリコン基板 W2:Cuを含む配線層 W3:保護膜
S:分割予定ライン D:デバイス T:粘着テープ F:リングフレーム
1:レーザー加工装置
11:チャックテーブル 110:吸着部 110a:保持面 111:枠体
112:回転手段
12:レーザー加工手段 120:ハウジング 120a:レーザー発振器
121:集光器 121a:ミラー 121b:集光レンズ
13:アライメント手段 130:撮像手段 M:加工溝 G:Cuを含むデブリ
9:プラズマエッチング装置
90:静電チャック(ESC) 900:保持テーブル 901:電極
91:ガス噴出ヘッド 910:ガス拡散空間 911:ガス導入口
912:ガス吐出口 913:ガス配管
92:チャンバ 920:搬入出口 921:ゲートバルブ
93:ガス供給部 94,94a:整合器 95,95a:高周波電源
96:排気管 97:排気装置 98:制御部
2:切削装置
30:チャックテーブル 30a:保持面 30b:回転手段
6:切削手段 60:切削ブレード 61:アライメント手段 610:撮像手段
62:スピンドルハウジング 63:スピンドル
Claims (2)
- 基板の上面にCuを含む配線層を備え、該配線層を含んだ分割予定ラインで区画された領域にデバイスが形成されたウエーハを該分割予定ラインに沿って分割するウエーハの分割方法であって、
ウエーハに対して吸収性を有する波長のレーザー光線を該配線層側から照射して分割予定ラインに沿って該配線層を切断して該基板に到る加工溝を形成するレーザー加工溝形成工程と、
該レーザー加工溝形成工程の実施後、該加工溝に沿って該加工溝の最外幅よりも幅が狭い切削ブレードをウエーハに切り込ませウエーハを完全切断する切削工程と、
該レーザー加工溝形成工程の実施後において、少なくとも該加工溝内の該配線層が切断された部分をドライエッチングすることにより該レーザー加工溝形成工程で生成された該Cuを含むデブリを除去し該デブリの成長を防ぐドライエッチング工程と、
からなるウエーハの分割方法。 - 前記ドライエッチング工程の実施前までに前記デバイスの上面を保護する保護膜を形成する保護膜形成工程を行う請求項1記載のウエーハの分割方法。
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JP2015223723A JP6587911B2 (ja) | 2015-11-16 | 2015-11-16 | ウエーハの分割方法 |
TW105132905A TWI732790B (zh) | 2015-11-16 | 2016-10-12 | 晶圓的分割方法 |
KR1020160149040A KR102493116B1 (ko) | 2015-11-16 | 2016-11-09 | 웨이퍼의 분할 방법 |
US15/348,071 US10354919B2 (en) | 2015-11-16 | 2016-11-10 | Wafer dividing method |
CN201610997489.3A CN106847747B (zh) | 2015-11-16 | 2016-11-11 | 晶片的分割方法 |
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JP2015223723A JP6587911B2 (ja) | 2015-11-16 | 2015-11-16 | ウエーハの分割方法 |
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JP6587911B2 true JP6587911B2 (ja) | 2019-10-09 |
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US (1) | US10354919B2 (ja) |
JP (1) | JP6587911B2 (ja) |
KR (1) | KR102493116B1 (ja) |
CN (1) | CN106847747B (ja) |
TW (1) | TWI732790B (ja) |
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JP2017213628A (ja) * | 2016-05-31 | 2017-12-07 | 株式会社ディスコ | 切削装置 |
JP2018125479A (ja) * | 2017-02-03 | 2018-08-09 | 株式会社ディスコ | ウェーハの加工方法 |
CN107414309B (zh) * | 2017-07-14 | 2019-12-17 | 北京中科镭特电子有限公司 | 一种激光加工晶圆的方法及装置 |
KR102492733B1 (ko) | 2017-09-29 | 2023-01-27 | 삼성디스플레이 주식회사 | 구리 플라즈마 식각 방법 및 디스플레이 패널 제조 방법 |
JP7142236B2 (ja) * | 2018-03-28 | 2022-09-27 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP7068028B2 (ja) * | 2018-05-09 | 2022-05-16 | 株式会社ディスコ | ウェーハの分割方法 |
JP7109862B2 (ja) | 2018-07-10 | 2022-08-01 | 株式会社ディスコ | 半導体ウェーハの加工方法 |
JP7072993B2 (ja) * | 2018-07-31 | 2022-05-23 | 株式会社ディスコ | チップ製造方法 |
US10622272B1 (en) | 2018-10-24 | 2020-04-14 | Advanced Semiconductor Engineering, Inc. | Semiconductor chip structure and semiconductor package |
JP7193350B2 (ja) * | 2019-01-07 | 2022-12-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP7325897B2 (ja) * | 2019-04-18 | 2023-08-15 | 株式会社ディスコ | 加工装置及び被加工物の加工方法 |
US11854888B2 (en) * | 2020-06-22 | 2023-12-26 | Applied Materials, Inc. | Laser scribing trench opening control in wafer dicing using hybrid laser scribing and plasma etch approach |
JP2022049438A (ja) * | 2020-09-16 | 2022-03-29 | 株式会社ディスコ | ウエーハの加工方法 |
KR102529664B1 (ko) | 2021-02-01 | 2023-05-04 | 동의대학교 산학협력단 | 식용 가능한 생분해성 숟가락 및 이의 제조방법 |
CN113644035A (zh) * | 2021-08-06 | 2021-11-12 | 广东工业大学 | 一种半导体晶圆及其激光加工方法、系统 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1027971A (ja) * | 1996-07-10 | 1998-01-27 | Nec Corp | 有機薄膜多層配線基板の切断方法 |
US6420245B1 (en) * | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
US6527968B1 (en) * | 2000-03-27 | 2003-03-04 | Applied Materials Inc. | Two-stage self-cleaning silicon etch process |
US6596562B1 (en) * | 2002-01-03 | 2003-07-22 | Intel Corporation | Semiconductor wafer singulation method |
JP4422463B2 (ja) * | 2003-11-07 | 2010-02-24 | 株式会社ディスコ | 半導体ウエーハの分割方法 |
US6974726B2 (en) * | 2003-12-30 | 2005-12-13 | Intel Corporation | Silicon wafer with soluble protective coating |
GB2420443B (en) * | 2004-11-01 | 2009-09-16 | Xsil Technology Ltd | Increasing die strength by etching during or after dicing |
JP4571850B2 (ja) * | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
JP4694845B2 (ja) * | 2005-01-05 | 2011-06-08 | 株式会社ディスコ | ウエーハの分割方法 |
US7265034B2 (en) * | 2005-02-18 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cutting integrated circuit chips from wafer by ablating with laser and cutting with saw blade |
CN101238238A (zh) * | 2005-08-02 | 2008-08-06 | 麻省理工学院 | 使用氟化硫从cvd/pecvd腔的内部除去表面沉积物的远程腔方法 |
JP4993886B2 (ja) | 2005-09-07 | 2012-08-08 | 株式会社ディスコ | レーザー加工装置 |
JP2009021476A (ja) * | 2007-07-13 | 2009-01-29 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2012023085A (ja) * | 2010-07-12 | 2012-02-02 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
US8598016B2 (en) * | 2011-06-15 | 2013-12-03 | Applied Materials, Inc. | In-situ deposited mask layer for device singulation by laser scribing and plasma etch |
US8673741B2 (en) * | 2011-06-24 | 2014-03-18 | Electro Scientific Industries, Inc | Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer |
US8993414B2 (en) * | 2012-07-13 | 2015-03-31 | Applied Materials, Inc. | Laser scribing and plasma etch for high die break strength and clean sidewall |
US9040389B2 (en) * | 2012-10-09 | 2015-05-26 | Infineon Technologies Ag | Singulation processes |
JP6113019B2 (ja) * | 2013-08-07 | 2017-04-12 | 株式会社ディスコ | ウエーハの分割方法 |
JP6162018B2 (ja) * | 2013-10-15 | 2017-07-12 | 株式会社ディスコ | ウエーハの加工方法 |
JP6302644B2 (ja) * | 2013-11-11 | 2018-03-28 | 株式会社ディスコ | ウェーハの加工方法 |
JP6223801B2 (ja) * | 2013-12-05 | 2017-11-01 | 株式会社ディスコ | 光デバイスウェーハの加工方法 |
US9299611B2 (en) * | 2014-01-29 | 2016-03-29 | Applied Materials, Inc. | Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance |
US9355907B1 (en) * | 2015-01-05 | 2016-05-31 | Applied Materials, Inc. | Hybrid wafer dicing approach using a line shaped laser beam profile laser scribing process and plasma etch process |
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US10354919B2 (en) | 2019-07-16 |
KR20170057139A (ko) | 2017-05-24 |
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