CN101088157A - 通过在分割期间或之后进行蚀刻来增强晶片强度 - Google Patents
通过在分割期间或之后进行蚀刻来增强晶片强度 Download PDFInfo
- Publication number
- CN101088157A CN101088157A CNA2005800441751A CN200580044175A CN101088157A CN 101088157 A CN101088157 A CN 101088157A CN A2005800441751 A CNA2005800441751 A CN A2005800441751A CN 200580044175 A CN200580044175 A CN 200580044175A CN 101088157 A CN101088157 A CN 101088157A
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- Prior art keywords
- wafer
- semiconductor crystal
- crystal wafer
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- Granted
Links
- 238000005530 etching Methods 0.000 title claims description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 239000013078 crystal Substances 0.000 claims description 44
- 238000005520 cutting process Methods 0.000 claims description 38
- 230000004044 response Effects 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 14
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract 1
- 230000002269 spontaneous effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 166
- 238000003698 laser cutting Methods 0.000 description 25
- 239000010410 layer Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- 230000004075 alteration Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 239000013013 elastic material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
晶圆号码 | 分割处理 | 蚀刻深度(μm) | 晶圆号码 | 分割处理 | 蚀刻深度(μm) | |
1 | 激光 | 未蚀刻 | 6 | 锯切 | 未蚀刻 | |
2 | 2 | 7 | 2 | |||
3 | 3 | 8 | 3 | |||
4 | 4 | 9 | 4 | |||
5 | 25 | 10 | 25 |
蚀刻深度(μm) | 循环数目 | 每次循环的时间(sec) |
未蚀刻 | -- | -- |
2μm | 8 | 10 |
3μm | 12 | 10 |
4μm | 16 | 10 |
25μm | 100 | 10 |
Xise激光切割的晶圆的归一化的晶片强度(MPa) | |||||
控制晶圆 | 被蚀刻2μm | 被蚀刻3μm | 被蚀刻4μm | 被蚀刻25μm | |
平均值(MPa) | 223 | 506 | 697 | 658 | 1381 |
标准偏差(MPa) | 83 | 178 | 162 | 131 | 417 |
最大值(MPa) | 404 | 799 | 1077 | 920 | 2279 |
最小值(MPa) | 100 | 221 | 446 | 403 | 663 |
范围(MPa) | 304 | 578 | 632 | 518 | 1616 |
变动系数 | 0.37 | 0.35 | 0.23 | 0.20 | 0.30 |
机械锯刀切割的晶圆的归一化的晶片强度(MPa) | |||||
控制晶圆 | 被蚀刻2μm | 被蚀刻3μm | 被蚀刻4μm | 被蚀刻25μm | |
平均值(MPa) | 861 | 1308 | 1585 | 1427 | 2148 |
标准偏差(MPa) | 181 | 593 | 623 | 457 | 601 |
最大值(MPa) | 1245 | 2250 | 2894 | 2119 | 3035 |
最小值(MPa) | 512 | 321 | 622 | 617 | 790 |
范围(MPa) | 733 | 1929 | 2272 | 1502 | 2246 |
变动系数 | 0.21 | 0.45 | 0.39 | 0.32 | 0.28 |
Xise激光切割的晶圆的归一化的晶片强度(MPa) | |||||
控制晶圆 | 被蚀刻2μm | 被蚀刻3μm | 被蚀刻4μm | 被蚀刻25μm | |
平均值(MPa) | 194 | 394 | 551 | 574 | 770 |
标准偏差(MPa) | 23 | 81 | 109 | 101 | 155 |
最大值(MPa) | 234 | 588 | 743 | 762 | 1043 |
最小值(MPa) | 139 | 296 | 370 | 342 | 543 |
范围(MPa) | 95 | 291 | 373 | 419 | 500 |
变动系数 | 0.12 | 0.20 | 0.20 | 0.18 | 0.20 |
机械锯刀切割的晶圆的归一化的晶片强度(MPa) | |||||
控制晶圆 | 被蚀刻2μm | 被蚀刻3μm | 被蚀刻4μm | 被蚀刻25μm | |
平均值(MPa) | 680 | 716 | 843 | 868 | -- |
标准偏差(MPa) | 137 | 425 | 399 | 357 | -- |
最大值(MPa) | 863 | 1851 | 1608 | 1583 | -- |
最小值(MPa) | 316 | 213 | 365 | 344 | -- |
范围(MPa) | 547 | 1638 | 1244 | 1240 | -- |
变动系数 | 0.20 | 0.59 | 0.47 | 0.41 | -- |
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0424195A GB2420443B (en) | 2004-11-01 | 2004-11-01 | Increasing die strength by etching during or after dicing |
GB0424195.6 | 2004-11-01 | ||
PCT/EP2005/011671 WO2006048230A1 (en) | 2004-11-01 | 2005-11-01 | Increasing die strength by etching during or after dicing |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101088157A true CN101088157A (zh) | 2007-12-12 |
CN101088157B CN101088157B (zh) | 2010-06-23 |
Family
ID=33515886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800441751A Expired - Fee Related CN101088157B (zh) | 2004-11-01 | 2005-11-01 | 通过在分割期间或之后进行蚀刻来增强晶片强度 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20090191690A1 (zh) |
EP (1) | EP1825507B1 (zh) |
JP (2) | JP4690417B2 (zh) |
KR (1) | KR20070051360A (zh) |
CN (1) | CN101088157B (zh) |
AT (1) | ATE526681T1 (zh) |
GB (1) | GB2420443B (zh) |
TW (1) | TWI278032B (zh) |
WO (1) | WO2006048230A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103703554A (zh) * | 2011-06-24 | 2014-04-02 | 伊雷克托科学工业股份有限公司 | 在裁切晶粒附着膜或其它材料层之前,蚀刻激光切割半导体 |
CN108630599A (zh) * | 2017-03-22 | 2018-10-09 | 东莞新科技术研究开发有限公司 | 芯片的形成方法 |
WO2019019763A1 (zh) * | 2017-07-27 | 2019-01-31 | 厦门市三安集成电路有限公司 | 一种化合物半导体器件的背面制程方法 |
CN110064849A (zh) * | 2018-01-23 | 2019-07-30 | 株式会社迪思科 | 被加工物的加工方法、蚀刻装置和激光加工装置 |
Families Citing this family (28)
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KR101037142B1 (ko) * | 2002-04-19 | 2011-05-26 | 일렉트로 사이언티픽 인더스트리즈, 아이엔씨 | 펄스 레이저를 이용한 기판의 프로그램 제어 다이싱 |
JP2008159985A (ja) * | 2006-12-26 | 2008-07-10 | Matsushita Electric Ind Co Ltd | 半導体チップの製造方法 |
JP2009111147A (ja) * | 2007-10-30 | 2009-05-21 | Denso Corp | 半導体チップ及びその製造方法 |
GB2458475B (en) * | 2008-03-18 | 2011-10-26 | Xsil Technology Ltd | Processing of multilayer semiconductor wafers |
GB2459302A (en) * | 2008-04-18 | 2009-10-21 | Xsil Technology Ltd | A method of dicing wafers to give high die strength |
GB2459301B (en) * | 2008-04-18 | 2011-09-14 | Xsil Technology Ltd | A method of dicing wafers to give high die strength |
KR101140369B1 (ko) * | 2010-03-26 | 2012-05-03 | 최선규 | 이플루오르화크세논을 이용한 기판 가공장치 및 다이싱 방법 |
US8071429B1 (en) | 2010-11-24 | 2011-12-06 | Omnivision Technologies, Inc. | Wafer dicing using scribe line etch |
US8666530B2 (en) | 2010-12-16 | 2014-03-04 | Electro Scientific Industries, Inc. | Silicon etching control method and system |
US8361828B1 (en) * | 2011-08-31 | 2013-01-29 | Alta Devices, Inc. | Aligned frontside backside laser dicing of semiconductor films |
US8399281B1 (en) * | 2011-08-31 | 2013-03-19 | Alta Devices, Inc. | Two beam backside laser dicing of semiconductor films |
US8536025B2 (en) * | 2011-12-12 | 2013-09-17 | International Business Machines Corporation | Resized wafer with a negative photoresist ring and design structures thereof |
US8952413B2 (en) | 2012-03-08 | 2015-02-10 | Micron Technology, Inc. | Etched trenches in bond materials for die singulation, and associated systems and methods |
US9034733B2 (en) | 2012-08-20 | 2015-05-19 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
US8664089B1 (en) * | 2012-08-20 | 2014-03-04 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
JP6166034B2 (ja) * | 2012-11-22 | 2017-07-19 | 株式会社ディスコ | ウエーハの加工方法 |
US8980726B2 (en) * | 2013-01-25 | 2015-03-17 | Applied Materials, Inc. | Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers |
WO2014126559A1 (en) | 2013-02-13 | 2014-08-21 | Hewlett-Packard Development Company, L.P. | Fluid ejection device |
US9472458B2 (en) | 2014-06-04 | 2016-10-18 | Semiconductor Components Industries, Llc | Method of reducing residual contamination in singulated semiconductor die |
JP6282194B2 (ja) * | 2014-07-30 | 2018-02-21 | 株式会社ディスコ | ウェーハの加工方法 |
US9601437B2 (en) | 2014-09-09 | 2017-03-21 | Nxp B.V. | Plasma etching and stealth dicing laser process |
US9337098B1 (en) | 2015-08-14 | 2016-05-10 | Semiconductor Components Industries, Llc | Semiconductor die back layer separation method |
JP6587911B2 (ja) * | 2015-11-16 | 2019-10-09 | 株式会社ディスコ | ウエーハの分割方法 |
US10373869B2 (en) | 2017-05-24 | 2019-08-06 | Semiconductor Components Industries, Llc | Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus |
US10916474B2 (en) | 2018-06-25 | 2021-02-09 | Semiconductor Components Industries, Llc | Method of reducing residual contamination in singulated semiconductor die |
JP7109862B2 (ja) * | 2018-07-10 | 2022-08-01 | 株式会社ディスコ | 半導体ウェーハの加工方法 |
US11217550B2 (en) | 2018-07-24 | 2022-01-04 | Xilinx, Inc. | Chip package assembly with enhanced interconnects and method for fabricating the same |
JP7296835B2 (ja) * | 2019-09-19 | 2023-06-23 | 株式会社ディスコ | ウェーハの処理方法、及び、チップ測定装置 |
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-
2004
- 2004-11-01 GB GB0424195A patent/GB2420443B/en not_active Expired - Fee Related
-
2005
- 2005-10-31 TW TW094138107A patent/TWI278032B/zh active
- 2005-11-01 CN CN2005800441751A patent/CN101088157B/zh not_active Expired - Fee Related
- 2005-11-01 JP JP2007538353A patent/JP4690417B2/ja not_active Expired - Fee Related
- 2005-11-01 US US11/666,796 patent/US20090191690A1/en not_active Abandoned
- 2005-11-01 EP EP05808203A patent/EP1825507B1/en not_active Not-in-force
- 2005-11-01 KR KR1020077008211A patent/KR20070051360A/ko not_active Application Discontinuation
- 2005-11-01 AT AT05808203T patent/ATE526681T1/de not_active IP Right Cessation
- 2005-11-01 WO PCT/EP2005/011671 patent/WO2006048230A1/en active Application Filing
-
2010
- 2010-01-28 JP JP2010016318A patent/JP2010147488A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103703554A (zh) * | 2011-06-24 | 2014-04-02 | 伊雷克托科学工业股份有限公司 | 在裁切晶粒附着膜或其它材料层之前,蚀刻激光切割半导体 |
CN108630599A (zh) * | 2017-03-22 | 2018-10-09 | 东莞新科技术研究开发有限公司 | 芯片的形成方法 |
WO2019019763A1 (zh) * | 2017-07-27 | 2019-01-31 | 厦门市三安集成电路有限公司 | 一种化合物半导体器件的背面制程方法 |
CN110064849A (zh) * | 2018-01-23 | 2019-07-30 | 株式会社迪思科 | 被加工物的加工方法、蚀刻装置和激光加工装置 |
CN110064849B (zh) * | 2018-01-23 | 2023-01-13 | 株式会社迪思科 | 被加工物的加工方法、蚀刻装置和激光加工装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20070051360A (ko) | 2007-05-17 |
JP2010147488A (ja) | 2010-07-01 |
JP2008518450A (ja) | 2008-05-29 |
GB2420443B (en) | 2009-09-16 |
EP1825507A1 (en) | 2007-08-29 |
ATE526681T1 (de) | 2011-10-15 |
GB0424195D0 (en) | 2004-12-01 |
GB2420443A (en) | 2006-05-24 |
TW200625435A (en) | 2006-07-16 |
WO2006048230A1 (en) | 2006-05-11 |
TWI278032B (en) | 2007-04-01 |
EP1825507B1 (en) | 2011-09-28 |
US20090191690A1 (en) | 2009-07-30 |
CN101088157B (zh) | 2010-06-23 |
JP4690417B2 (ja) | 2011-06-01 |
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