JP4663094B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4663094B2
JP4663094B2 JP2000314369A JP2000314369A JP4663094B2 JP 4663094 B2 JP4663094 B2 JP 4663094B2 JP 2000314369 A JP2000314369 A JP 2000314369A JP 2000314369 A JP2000314369 A JP 2000314369A JP 4663094 B2 JP4663094 B2 JP 4663094B2
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JP
Japan
Prior art keywords
switch
transistor
electrically connected
potential
operational amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000314369A
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English (en)
Japanese (ja)
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JP2002124091A5 (enExample
JP2002124091A (ja
Inventor
舜平 山崎
潤 小山
清 加藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000314369A priority Critical patent/JP4663094B2/ja
Priority to US09/976,770 priority patent/US6556475B2/en
Publication of JP2002124091A publication Critical patent/JP2002124091A/ja
Priority to US10/383,209 priority patent/US6914818B2/en
Priority to US11/109,325 priority patent/US7298652B2/en
Priority to US11/924,090 priority patent/US7512006B2/en
Publication of JP2002124091A5 publication Critical patent/JP2002124091A5/ja
Priority to US12/407,539 priority patent/US7855919B2/en
Priority to US12/814,761 priority patent/US8054690B2/en
Application granted granted Critical
Publication of JP4663094B2 publication Critical patent/JP4663094B2/ja
Priority to US13/288,383 priority patent/US8315101B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP2000314369A 2000-10-13 2000-10-13 半導体装置 Expired - Fee Related JP4663094B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2000314369A JP4663094B2 (ja) 2000-10-13 2000-10-13 半導体装置
US09/976,770 US6556475B2 (en) 2000-10-13 2001-10-12 Non-volatile memory and semiconductor device
US10/383,209 US6914818B2 (en) 2000-10-13 2003-03-06 Non-volatile memory and semiconductor device
US11/109,325 US7298652B2 (en) 2000-10-13 2005-04-19 Non-volatile memory and semiconductor device
US11/924,090 US7512006B2 (en) 2000-10-13 2007-10-25 Non-volatile memory and semiconductor device
US12/407,539 US7855919B2 (en) 2000-10-13 2009-03-19 Non-volatile memory and semiconductor device
US12/814,761 US8054690B2 (en) 2000-10-13 2010-06-14 Non-volatile memory and semiconductor device
US13/288,383 US8315101B2 (en) 2000-10-13 2011-11-03 Non-volatile memory and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000314369A JP4663094B2 (ja) 2000-10-13 2000-10-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2002124091A JP2002124091A (ja) 2002-04-26
JP2002124091A5 JP2002124091A5 (enExample) 2007-11-01
JP4663094B2 true JP4663094B2 (ja) 2011-03-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000314369A Expired - Fee Related JP4663094B2 (ja) 2000-10-13 2000-10-13 半導体装置

Country Status (2)

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US (7) US6556475B2 (enExample)
JP (1) JP4663094B2 (enExample)

Families Citing this family (51)

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JP4663094B2 (ja) * 2000-10-13 2011-03-30 株式会社半導体エネルギー研究所 半導体装置
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EP1365417A1 (en) 2002-05-13 2003-11-26 STMicroelectronics S.r.l. Programming method of the memory cells in a multilevel non-volatile memory device
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KR100476928B1 (ko) * 2002-08-14 2005-03-16 삼성전자주식회사 비트라인 커플링과 로딩 효과에 대해 안정적인 소스라인을 갖는 플레쉬 메모리 어레이
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JP4884671B2 (ja) * 2003-05-14 2012-02-29 株式会社半導体エネルギー研究所 半導体装置
CN1802681B (zh) * 2003-06-06 2011-07-13 株式会社半导体能源研究所 半导体装置
EP1671303B1 (en) 2003-09-12 2014-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
JP4649156B2 (ja) * 2004-09-28 2011-03-09 シチズンホールディングス株式会社 半導体装置およびそのデータ書き込み方法
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JP4884784B2 (ja) * 2005-01-28 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体装置
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Also Published As

Publication number Publication date
US7855919B2 (en) 2010-12-21
US7298652B2 (en) 2007-11-20
US20090180326A1 (en) 2009-07-16
US6914818B2 (en) 2005-07-05
US20080117680A1 (en) 2008-05-22
US6556475B2 (en) 2003-04-29
US20020064070A1 (en) 2002-05-30
US20030128582A1 (en) 2003-07-10
US20050185462A1 (en) 2005-08-25
US8054690B2 (en) 2011-11-08
JP2002124091A (ja) 2002-04-26
US8315101B2 (en) 2012-11-20
US20120044763A1 (en) 2012-02-23
US20100296343A1 (en) 2010-11-25
US7512006B2 (en) 2009-03-31

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