DE602006021635D1 - Nichtflüchtiger speicherbaustein und programmierbare spannungsreferenz für einen nichtflüchtigen speicherbaustein - Google Patents

Nichtflüchtiger speicherbaustein und programmierbare spannungsreferenz für einen nichtflüchtigen speicherbaustein

Info

Publication number
DE602006021635D1
DE602006021635D1 DE602006021635T DE602006021635T DE602006021635D1 DE 602006021635 D1 DE602006021635 D1 DE 602006021635D1 DE 602006021635 T DE602006021635 T DE 602006021635T DE 602006021635 T DE602006021635 T DE 602006021635T DE 602006021635 D1 DE602006021635 D1 DE 602006021635D1
Authority
DE
Germany
Prior art keywords
volatile memory
memory block
voltage reference
programmable voltage
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006021635T
Other languages
English (en)
Inventor
Hubert M Bode
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of DE602006021635D1 publication Critical patent/DE602006021635D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
DE602006021635T 2006-03-16 2006-03-16 Nichtflüchtiger speicherbaustein und programmierbare spannungsreferenz für einen nichtflüchtigen speicherbaustein Active DE602006021635D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/002407 WO2007104336A1 (en) 2006-03-16 2006-03-16 A non-volatile memory device and programmable voltage reference for a non-volatile memory device

Publications (1)

Publication Number Publication Date
DE602006021635D1 true DE602006021635D1 (de) 2011-06-09

Family

ID=37398328

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006021635T Active DE602006021635D1 (de) 2006-03-16 2006-03-16 Nichtflüchtiger speicherbaustein und programmierbare spannungsreferenz für einen nichtflüchtigen speicherbaustein

Country Status (5)

Country Link
US (1) US7948803B2 (de)
EP (1) EP2002445B1 (de)
DE (1) DE602006021635D1 (de)
TW (1) TW200746147A (de)
WO (1) WO2007104336A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007104337A1 (en) * 2006-03-16 2007-09-20 Freescale Semiconductor, Inc. Bitline current generator for a non-volatile memory array and a non-volatile memory array
WO2007104335A1 (en) * 2006-03-16 2007-09-20 Freescale Semiconductor, Inc. A wordline driver for a non-volatile memory device, a non-volatile memory device and method
WO2009111174A1 (en) * 2008-03-03 2009-09-11 Rambus Inc. Piecewise erasure of flash memory
KR101703040B1 (ko) * 2010-10-29 2017-02-06 에스케이하이닉스 주식회사 반도체 장치
KR20130107836A (ko) * 2012-03-23 2013-10-02 에스케이하이닉스 주식회사 멀티 칩 반도체 장치

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US124191A (en) * 1872-02-27 Improvement in woven felted fabrics for bonnets
US734024A (en) * 1901-06-28 1903-07-21 John E Watts Horseshoe.
US880143A (en) * 1906-02-07 1908-02-25 Safety Car Heating & Lighting Mantle-support and globe-holder for incandescent lamps.
US5784327A (en) * 1991-06-12 1998-07-21 Hazani; Emanuel Memory cell array selection circuits
US5508971A (en) 1994-10-17 1996-04-16 Sandisk Corporation Programmable power generation circuit for flash EEPROM memory systems
US5513147A (en) 1994-12-19 1996-04-30 Alliance Semiconductor Corporation Row driving circuit for memory devices
EP0734024B1 (de) 1995-03-23 2000-01-26 STMicroelectronics S.r.l. Leseschaltung für serielle dichotomische Abfühlung von mehrschichtigen nichtflüchtigen Speicherzellen
KR100252476B1 (ko) 1997-05-19 2000-04-15 윤종용 플레이트 셀 구조의 전기적으로 소거 및 프로그램 가능한 셀들을 구비한 불 휘발성 반도체 메모리 장치및 그것의 프로그램 방법
US5963477A (en) 1997-12-09 1999-10-05 Macronix International Co., Ltd. Flash EPROM erase algorithm with wordline level retry
US6448845B2 (en) 1999-09-30 2002-09-10 Koninklijke Philips Electronics N.V. Trimmable reference generator
JP3913952B2 (ja) 1999-12-28 2007-05-09 株式会社東芝 半導体記憶装置
US6555487B1 (en) * 2000-08-31 2003-04-29 Micron Technology, Inc. Method of selective oxidation conditions for dielectric conditioning
JP4663094B2 (ja) 2000-10-13 2011-03-30 株式会社半導体エネルギー研究所 半導体装置
DE10062123C1 (de) 2000-12-13 2002-06-20 Infineon Technologies Ag Referenzstromquelle für Speicherbauelemente
KR100655279B1 (ko) 2000-12-14 2006-12-08 삼성전자주식회사 불휘발성 반도체 메모리 장치
ITTO20020252A1 (it) 2002-03-21 2003-09-22 Micron Technology Inc Circuito e procedimento per la generazione di una corrente di riferimento a bassa tensione, dispositivo di memoria comprendente tale circuit
US6618297B1 (en) * 2002-08-02 2003-09-09 Atmel Corporation Method of establishing reference levels for sensing multilevel memory cell states
US6771200B2 (en) 2003-04-03 2004-08-03 Atmel Corporation DAC-based voltage regulator for flash memory array
KR100505705B1 (ko) 2003-08-22 2005-08-03 삼성전자주식회사 플래쉬 메모리 셀의 안정적인 프로그래밍을 위한 프로그램전압 발생 회로 및 그 프로그래밍 방법
US6791873B1 (en) 2003-09-08 2004-09-14 Hewlett-Packard Development Company, L.P. Apparatus and method for generating a write current for a magnetic memory cell
US7161844B2 (en) 2004-03-30 2007-01-09 Silicon Storage Technology, Inc. Method and apparatus for compensating for bitline leakage current
US7215583B2 (en) 2005-08-16 2007-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit for inhibition of program disturbance in memory devices
US7457178B2 (en) 2006-01-12 2008-11-25 Sandisk Corporation Trimming of analog voltages in flash memory devices
WO2007104337A1 (en) 2006-03-16 2007-09-20 Freescale Semiconductor, Inc. Bitline current generator for a non-volatile memory array and a non-volatile memory array
WO2007104335A1 (en) 2006-03-16 2007-09-20 Freescale Semiconductor, Inc. A wordline driver for a non-volatile memory device, a non-volatile memory device and method
US7474563B2 (en) * 2006-11-28 2009-01-06 Macronix International Co., Ltd. Flash memory, program circuit and program method thereof
US8054687B2 (en) * 2007-04-23 2011-11-08 Georgia Tech Research Corporation Systems and methods of providing programmable voltage and current reference devices
US7724600B1 (en) * 2008-03-05 2010-05-25 Xilinx, Inc. Electronic fuse programming current generator with on-chip reference

Also Published As

Publication number Publication date
WO2007104336A1 (en) 2007-09-20
TW200746147A (en) 2007-12-16
US7948803B2 (en) 2011-05-24
EP2002445A1 (de) 2008-12-17
US20090097324A1 (en) 2009-04-16
EP2002445B1 (de) 2011-04-27

Similar Documents

Publication Publication Date Title
DE602007002041D1 (de) Nichtflüchtige Speichervorrichtung und Verfahren zum Betreiben derselben
DE602007009762D1 (de) Gedruckter nicht-flüchtiger Speicher und dessen Herstellungsverfahren
EP1891529A4 (de) Flashspeicher mit programmierbarer dauer
TWI371041B (en) Non-volatile memory and method for predictive programming
DE602007000219D1 (de) Nichtflüchtige Speichervorrichtung und Betriebsverfahren dafür
DE502006005361D1 (de) Steuerungsanordnung für einen spannungskonverter und verfahren
DE602004010239D1 (de) Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
DE602006011495D1 (de) Versiegelungsvorrichtung für einen behälter
TWI340459B (en) One time programmable memory cell
TWI366893B (en) Non-volatile memory device and method for manufacturing the same
DE602006010481D1 (de) Speichersteuerung und Steuerverfahren dafür
DE602006008573D1 (de) Halbleiterspeicher, Speichersystem und Refreshverfahren für einen Halbleiterspeicher
EP1829217A4 (de) Konfigurationsschema eines nichtflüchtigen speichers für auf einem nichtflüchtigen speicher basierende programmierbare schaltungen in einem fpga
DE602007010164D1 (de) Antriebsvorrichtung für ein schaltelement und antriebsverfahren für ein schaltelement
DE602008003345D1 (de) Halbleiterspeicher, Speichersteuerung, System und Betriebsverfahren für einen Halbleiterspeicher
DE602006012780D1 (de) Entwicklereinheit für einen Zweikomponentenentwickler
PL2170617T3 (pl) Weryfikacja integralności danych pamięci nieulotnej
DE602006005080D1 (de) Verbesserter lesemodus für flash-speicher
DE602007003666D1 (de) Speicherelement und Speicher
HK1133121A1 (en) Scalable electrically eraseable and programmable memory
DE502006008622D1 (de) Verklinkungseinrichtung für einen federspeicherantrieb
DE602006012928D1 (de) Halbleiterspeicher, Speichersteuerung und Steuerverfahren für einen Halbleiterspeicher
DE602006015229D1 (de) Glied für einen druckknopfschalter und herstellungsverfahren dafür
DE602006021635D1 (de) Nichtflüchtiger speicherbaustein und programmierbare spannungsreferenz für einen nichtflüchtigen speicherbaustein
GB0607482D0 (en) Programmable read-only memory