DE602006005080D1 - Verbesserter lesemodus für flash-speicher - Google Patents

Verbesserter lesemodus für flash-speicher

Info

Publication number
DE602006005080D1
DE602006005080D1 DE602006005080T DE602006005080T DE602006005080D1 DE 602006005080 D1 DE602006005080 D1 DE 602006005080D1 DE 602006005080 T DE602006005080 T DE 602006005080T DE 602006005080 T DE602006005080 T DE 602006005080T DE 602006005080 D1 DE602006005080 D1 DE 602006005080D1
Authority
DE
Germany
Prior art keywords
flash memory
reading mode
improved reading
improved
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006005080T
Other languages
English (en)
Inventor
Hounien Chen
Nancy S Leong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion LLC filed Critical Spansion LLC
Publication of DE602006005080D1 publication Critical patent/DE602006005080D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
DE602006005080T 2005-07-27 2006-07-17 Verbesserter lesemodus für flash-speicher Active DE602006005080D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/189,923 US7706183B2 (en) 2005-07-27 2005-07-27 Read mode for flash memory
PCT/US2006/027852 WO2007015863A2 (en) 2005-07-27 2006-07-17 Read more for a page- and row-divided memory based on skipping non- programmed rows

Publications (1)

Publication Number Publication Date
DE602006005080D1 true DE602006005080D1 (de) 2009-03-19

Family

ID=37460126

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006005080T Active DE602006005080D1 (de) 2005-07-27 2006-07-17 Verbesserter lesemodus für flash-speicher

Country Status (5)

Country Link
US (2) US7706183B2 (de)
EP (1) EP1908077B1 (de)
DE (1) DE602006005080D1 (de)
TW (1) TW200710861A (de)
WO (1) WO2007015863A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7706183B2 (en) * 2005-07-27 2010-04-27 Spansion Llc Read mode for flash memory
US7352626B1 (en) * 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
US7295475B2 (en) * 2005-09-20 2007-11-13 Spansion Llc Flash memory programming using an indication bit to interpret state
TW200727303A (en) * 2006-01-08 2007-07-16 Ememory Technology Inc A method and memory capable of improving the endurance of memory
JP2009087509A (ja) * 2007-10-03 2009-04-23 Toshiba Corp 半導体記憶装置
US20100287329A1 (en) * 2009-05-06 2010-11-11 Apple Inc. Partial Page Operations for Non-Volatile Memory Systems
KR101792870B1 (ko) * 2011-06-21 2017-11-02 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 읽기 방법
US8861276B2 (en) * 2011-06-21 2014-10-14 Samsung Electronics Co., Ltd. Nonvolatile memory device, memory system comprising same, and method of operating same
KR20130046171A (ko) * 2011-10-27 2013-05-07 에스케이하이닉스 주식회사 반도체 장치 및 이의 동작 방법
US9940193B2 (en) 2014-06-06 2018-04-10 Micron Technology, Inc. Chunk definition for partial-page read
US10372446B2 (en) * 2017-07-01 2019-08-06 Intel Corporation Technology to dynamically modulate memory device read granularity
CN115862712A (zh) * 2021-03-30 2023-03-28 长江存储科技有限责任公司 三维存储器件和用于增强的页寄存器复位的方法

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US5280594A (en) * 1990-07-25 1994-01-18 Advanced Micro Devices, Inc. Architecture for high speed contiguous sequential access memories
JP3432548B2 (ja) * 1993-07-26 2003-08-04 株式会社日立製作所 半導体記憶装置
JP3898305B2 (ja) * 1997-10-31 2007-03-28 富士通株式会社 半導体記憶装置、半導体記憶装置の制御装置及び制御方法
JPH11203191A (ja) * 1997-11-13 1999-07-30 Seiko Epson Corp 不揮発性記憶装置、不揮発性記憶装置の制御方法、および、不揮発性記憶装置を制御するプログラムを記録した情報記録媒体
AU1729100A (en) 1998-11-17 2000-06-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6178479B1 (en) * 1999-02-22 2001-01-23 Nband Communications Cycle-skipping DRAM for power saving
US6412080B1 (en) * 1999-02-23 2002-06-25 Microsoft Corporation Lightweight persistent storage system for flash memory devices
KR100618298B1 (ko) * 1999-07-28 2006-09-01 소니 가부시끼 가이샤 기록 시스템, 데이터 기록 장치, 메모리 장치 및 데이터기록 방법
JP3829161B2 (ja) 1999-10-14 2006-10-04 スパンション インク 多ビット情報を記録する不揮発性メモリ回路
US6377500B1 (en) * 1999-11-11 2002-04-23 Kabushiki Kaisha Toshiba Memory system with a non-volatile memory, having address translating function
US6622201B1 (en) * 2000-01-28 2003-09-16 Advanced Micro Devices, Inc. Chained array of sequential access memories enabling continuous read
US6304510B1 (en) * 2000-08-31 2001-10-16 Micron Technology, Inc. Memory device address decoding
JP4055103B2 (ja) * 2000-10-02 2008-03-05 株式会社ルネサステクノロジ 不揮発性メモリおよびそれを内蔵した半導体集積回路並びに不揮発性メモリの書込み方法
EP1220229B1 (de) * 2000-12-29 2009-03-18 STMicroelectronics S.r.l. Ein elektrisch modifizierbarer nichtflüchtiger Halbleiterspeicher der eingeschriebene Daten solange hält, bis ihre Neuprogrammierung abgeschlossen ist
US6377507B1 (en) * 2001-04-06 2002-04-23 Integrated Memory Technologies, Inc. Non-volatile memory device having high speed page mode operation
US6584018B2 (en) * 2001-10-05 2003-06-24 Mosel Vitelic, Inc. Nonvolatile memory structures and access methods
KR100454119B1 (ko) 2001-10-24 2004-10-26 삼성전자주식회사 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들
US6885585B2 (en) * 2001-12-20 2005-04-26 Saifun Semiconductors Ltd. NROM NOR array
JP2004127405A (ja) * 2002-10-01 2004-04-22 Renesas Technology Corp 不揮発性半導体記憶装置
US6898680B2 (en) * 2003-01-03 2005-05-24 Micrel, Incorporated Minimization of overhead of non-volatile memory operation
US6914819B2 (en) 2003-09-04 2005-07-05 Macronix International Co., Ltd. Non-volatile flash memory
KR100626371B1 (ko) 2004-03-30 2006-09-20 삼성전자주식회사 캐쉬 읽기 동작을 수행하는 비휘발성 메모리 장치, 그것을포함한 메모리 시스템, 그리고 캐쉬 읽기 방법
US7706183B2 (en) * 2005-07-27 2010-04-27 Spansion Llc Read mode for flash memory
US7423915B2 (en) 2006-01-17 2008-09-09 Spansion Llc Random cache read using a double memory

Also Published As

Publication number Publication date
WO2007015863A3 (en) 2007-04-05
TW200710861A (en) 2007-03-16
WO2007015863A2 (en) 2007-02-08
US8107294B2 (en) 2012-01-31
US20070035991A1 (en) 2007-02-15
US7706183B2 (en) 2010-04-27
EP1908077B1 (de) 2009-02-04
US20100177568A1 (en) 2010-07-15
EP1908077A2 (de) 2008-04-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition