DE602004004892D1 - Ein Reihendekodierer für NAND-Speicher - Google Patents

Ein Reihendekodierer für NAND-Speicher

Info

Publication number
DE602004004892D1
DE602004004892D1 DE602004004892T DE602004004892T DE602004004892D1 DE 602004004892 D1 DE602004004892 D1 DE 602004004892D1 DE 602004004892 T DE602004004892 T DE 602004004892T DE 602004004892 T DE602004004892 T DE 602004004892T DE 602004004892 D1 DE602004004892 D1 DE 602004004892D1
Authority
DE
Germany
Prior art keywords
row decoder
nand memory
nand
memory
decoder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004004892T
Other languages
English (en)
Inventor
Raffaele Mastrangelo
Carlo Borromeo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
SK Hynix Inc
Original Assignee
STMicroelectronics SRL
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Hynix Semiconductor Inc filed Critical STMicroelectronics SRL
Publication of DE602004004892D1 publication Critical patent/DE602004004892D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE602004004892T 2004-08-11 2004-08-11 Ein Reihendekodierer für NAND-Speicher Active DE602004004892D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04425626A EP1626413B1 (de) 2004-08-11 2004-08-11 Ein Reihendekodierer für NAND-Speicher

Publications (1)

Publication Number Publication Date
DE602004004892D1 true DE602004004892D1 (de) 2007-04-05

Family

ID=34932717

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004004892T Active DE602004004892D1 (de) 2004-08-11 2004-08-11 Ein Reihendekodierer für NAND-Speicher

Country Status (3)

Country Link
US (1) US7180786B2 (de)
EP (1) EP1626413B1 (de)
DE (1) DE602004004892D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7212447B2 (en) * 2005-08-04 2007-05-01 Micron Technology, Inc. NAND flash memory cell programming
KR100769772B1 (ko) * 2006-09-29 2007-10-23 주식회사 하이닉스반도체 플래시 메모리 장치 및 이를 이용한 소거 방법
KR100898667B1 (ko) * 2007-08-06 2009-05-22 주식회사 하이닉스반도체 반도체 메모리 소자
JP2009141278A (ja) * 2007-12-10 2009-06-25 Toshiba Corp 不揮発性半導体記憶装置
JP2009146495A (ja) * 2007-12-13 2009-07-02 Toshiba Corp Ｎａｎｄ型フラッシュメモリ
KR100965066B1 (ko) * 2008-03-28 2010-06-21 주식회사 하이닉스반도체 플래시 메모리 소자 및 그 블록 선택 회로
KR100960448B1 (ko) * 2008-05-13 2010-05-28 주식회사 하이닉스반도체 불휘발성 메모리 장치의 프로그램 검증 방법
KR101024125B1 (ko) * 2009-01-22 2011-03-22 주식회사 하이닉스반도체 플래시 메모리 소자의 블럭 디코더
KR101066696B1 (ko) * 2009-06-29 2011-09-21 주식회사 하이닉스반도체 불휘발성 메모리 소자
JP2012119013A (ja) 2010-11-29 2012-06-21 Toshiba Corp 不揮発性半導体記憶装置
US9460805B1 (en) * 2015-10-19 2016-10-04 Sandisk Technologies Llc Word line dependent channel pre-charge for memory
US10262743B2 (en) 2016-10-25 2019-04-16 Sandisk Technologies Llc Command sequence for first read solution for memory
US10347315B2 (en) 2017-10-31 2019-07-09 Sandisk Technologies Llc Group read refresh

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07235193A (ja) * 1993-12-28 1995-09-05 Toshiba Corp 半導体記憶装置
US6072719A (en) * 1996-04-19 2000-06-06 Kabushiki Kaisha Toshiba Semiconductor memory device
JP3749789B2 (ja) * 1998-06-08 2006-03-01 株式会社東芝 半導体記憶装置
TW430793B (en) * 1999-05-20 2001-04-21 Ind Tech Res Inst Self-row identification hidden-type refresh-circuit and refresh method

Also Published As

Publication number Publication date
US20060050575A1 (en) 2006-03-09
US7180786B2 (en) 2007-02-20
EP1626413B1 (de) 2007-02-21
EP1626413A1 (de) 2006-02-15

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Legal Events

Date Code Title Description
8332 No legal effect for de