DE602006014734D1 - Flashspeichersteuerung - Google Patents

Flashspeichersteuerung

Info

Publication number
DE602006014734D1
DE602006014734D1 DE602006014734T DE602006014734T DE602006014734D1 DE 602006014734 D1 DE602006014734 D1 DE 602006014734D1 DE 602006014734 T DE602006014734 T DE 602006014734T DE 602006014734 T DE602006014734 T DE 602006014734T DE 602006014734 D1 DE602006014734 D1 DE 602006014734D1
Authority
DE
Germany
Prior art keywords
flash memory
memory control
control
flash
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006014734T
Other languages
English (en)
Inventor
Seiji Nakamura
Hirokazu Sou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of DE602006014734D1 publication Critical patent/DE602006014734D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1415—Saving, restoring, recovering or retrying at system level
    • G06F11/1441—Resetting or repowering
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7209—Validity control, e.g. using flags, time stamps or sequence numbers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
DE602006014734T 2006-03-13 2006-09-20 Flashspeichersteuerung Active DE602006014734D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006067385 2006-03-13
PCT/JP2006/318597 WO2007119267A1 (ja) 2006-03-13 2006-09-20 フラッシュメモリ用のメモリコントローラ

Publications (1)

Publication Number Publication Date
DE602006014734D1 true DE602006014734D1 (de) 2010-07-15

Family

ID=38609089

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006014734T Active DE602006014734D1 (de) 2006-03-13 2006-09-20 Flashspeichersteuerung

Country Status (7)

Country Link
US (1) US8006030B2 (de)
EP (1) EP2003569B1 (de)
JP (1) JP4524309B2 (de)
CN (1) CN101288056A (de)
DE (1) DE602006014734D1 (de)
TW (1) TW200736909A (de)
WO (1) WO2007119267A1 (de)

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JP4818404B2 (ja) * 2009-06-26 2011-11-16 株式会社東芝 素材サーバおよび素材蓄積方法
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CN102103558B (zh) * 2009-12-18 2013-09-18 上海华虹集成电路有限责任公司 一种带有写重传功能的多通道NANDflash控制器
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TWI451435B (zh) * 2010-10-08 2014-09-01 Phison Electronics Corp 非揮發性記憶體儲存裝置、記憶體控制器與資料儲存方法
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CN102609334B (zh) * 2012-01-09 2016-05-04 晨星软件研发(深圳)有限公司 非易失闪存擦除异常存储块修复方法和装置
US9239781B2 (en) 2012-02-07 2016-01-19 SMART Storage Systems, Inc. Storage control system with erase block mechanism and method of operation thereof
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US9671962B2 (en) 2012-11-30 2017-06-06 Sandisk Technologies Llc Storage control system with data management mechanism of parity and method of operation thereof
CN103020323B (zh) * 2013-01-15 2016-01-20 山东大学 一种基于未知长度二分查找的闪存数据检索存储的方法
US9123445B2 (en) 2013-01-22 2015-09-01 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US9214965B2 (en) 2013-02-20 2015-12-15 Sandisk Enterprise Ip Llc Method and system for improving data integrity in non-volatile storage
US9329928B2 (en) 2013-02-20 2016-05-03 Sandisk Enterprise IP LLC. Bandwidth optimization in a non-volatile memory system
US9183137B2 (en) 2013-02-27 2015-11-10 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US9183081B2 (en) * 2013-03-12 2015-11-10 Sandisk Technologies Inc. Systems and methods for performing defect detection and data recovery in a memory system
JP5695112B2 (ja) * 2013-03-18 2015-04-01 富士通テン株式会社 データ記憶装置、データの記憶方法および車載用制御装置
US10049037B2 (en) 2013-04-05 2018-08-14 Sandisk Enterprise Ip Llc Data management in a storage system
US9170941B2 (en) 2013-04-05 2015-10-27 Sandisk Enterprises IP LLC Data hardening in a storage system
US9543025B2 (en) * 2013-04-11 2017-01-10 Sandisk Technologies Llc Storage control system with power-off time estimation mechanism and method of operation thereof
US10546648B2 (en) 2013-04-12 2020-01-28 Sandisk Technologies Llc Storage control system with data management mechanism and method of operation thereof
US9367353B1 (en) 2013-06-25 2016-06-14 Sandisk Technologies Inc. Storage control system with power throttling mechanism and method of operation thereof
US9244519B1 (en) 2013-06-25 2016-01-26 Smart Storage Systems. Inc. Storage system with data transfer rate adjustment for power throttling
US9146850B2 (en) 2013-08-01 2015-09-29 SMART Storage Systems, Inc. Data storage system with dynamic read threshold mechanism and method of operation thereof
US9431113B2 (en) 2013-08-07 2016-08-30 Sandisk Technologies Llc Data storage system with dynamic erase block grouping mechanism and method of operation thereof
US9361222B2 (en) 2013-08-07 2016-06-07 SMART Storage Systems, Inc. Electronic system with storage drive life estimation mechanism and method of operation thereof
US9448946B2 (en) 2013-08-07 2016-09-20 Sandisk Technologies Llc Data storage system with stale data mechanism and method of operation thereof
US9152555B2 (en) 2013-11-15 2015-10-06 Sandisk Enterprise IP LLC. Data management with modular erase in a data storage system
CN103778964B (zh) * 2013-12-30 2016-08-17 上海晨思电子科技有限公司 一种NAND Flash烧写数据的处理、使用方法及装置、系统
CN105808153B (zh) * 2014-12-31 2018-11-13 深圳市硅格半导体有限公司 存储系统及其读写操作方法
KR102547642B1 (ko) * 2016-05-18 2023-06-28 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작방법
CN107544925B (zh) * 2016-06-24 2020-05-08 爱思开海力士有限公司 存储器系统及加速引导时间的方法
JP7109949B2 (ja) * 2018-03-23 2022-08-01 キオクシア株式会社 メモリシステム及びメモリシステムの制御方法
JP7030636B2 (ja) 2018-07-12 2022-03-07 キオクシア株式会社 メモリシステムおよびその制御方法
JP2020021385A (ja) * 2018-08-03 2020-02-06 キオクシア株式会社 メモリシステム
TWI696951B (zh) * 2018-08-31 2020-06-21 威剛科技股份有限公司 儲存裝置異常斷電的處理系統和方法
JP2020047834A (ja) 2018-09-20 2020-03-26 キオクシア株式会社 記憶装置
JP7017495B2 (ja) * 2018-10-15 2022-02-08 ハギワラソリューションズ株式会社 フラッシュメモリの管理方法
JP6708762B1 (ja) * 2019-01-29 2020-06-10 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
CN111949426A (zh) * 2019-05-16 2020-11-17 北京兆易创新科技股份有限公司 一种固件程序错误的检测方法、装置及存储设备
TWI745695B (zh) * 2019-05-22 2021-11-11 慧榮科技股份有限公司 用來進行無預警斷電復原管理之方法、記憶裝置及其控制器以及電子裝置
CN112100087B (zh) 2019-06-17 2024-04-02 慧荣科技股份有限公司 数据储存装置以及非挥发式存储器控制方法
CN112099985B (zh) 2019-06-17 2023-09-12 慧荣科技股份有限公司 数据储存装置以及非挥发式存储器控制方法
CN112130750B (zh) * 2019-06-25 2023-11-07 慧荣科技股份有限公司 数据储存装置以及非挥发式存储器控制方法
CN110764693B (zh) * 2019-09-12 2023-03-28 深圳市德明利技术股份有限公司 一种提高Nand flash数据稳定性的方法以及装置
JP7500365B2 (ja) * 2020-09-14 2024-06-17 キオクシア株式会社 メモリシステム
CN114116309B (zh) * 2021-11-19 2023-04-14 合肥康芯威存储技术有限公司 一种存储器的数据存取方法及系统

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Also Published As

Publication number Publication date
TW200736909A (en) 2007-10-01
EP2003569B1 (de) 2010-06-02
JPWO2007119267A1 (ja) 2009-08-27
JP4524309B2 (ja) 2010-08-18
CN101288056A (zh) 2008-10-15
EP2003569A4 (de) 2009-04-22
EP2003569A9 (de) 2009-04-15
WO2007119267A1 (ja) 2007-10-25
US8006030B2 (en) 2011-08-23
US20090228634A1 (en) 2009-09-10
EP2003569A2 (de) 2008-12-17

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