JP4644417B2 - 薄膜トランジスタ表示板及びその製造方法 - Google Patents

薄膜トランジスタ表示板及びその製造方法 Download PDF

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Publication number
JP4644417B2
JP4644417B2 JP2003277161A JP2003277161A JP4644417B2 JP 4644417 B2 JP4644417 B2 JP 4644417B2 JP 2003277161 A JP2003277161 A JP 2003277161A JP 2003277161 A JP2003277161 A JP 2003277161A JP 4644417 B2 JP4644417 B2 JP 4644417B2
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Japan
Prior art keywords
semiconductor layer
film
transistor array
thin film
film transistor
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Expired - Fee Related
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JP2003277161A
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English (en)
Japanese (ja)
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JP2004056153A5 (enExample
JP2004056153A (ja
Inventor
相 洙 金
東 奎 金
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020020042659A external-priority patent/KR100878238B1/ko
Priority claimed from KR1020020068107A external-priority patent/KR100878278B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2004056153A publication Critical patent/JP2004056153A/ja
Publication of JP2004056153A5 publication Critical patent/JP2004056153A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP2003277161A 2002-07-19 2003-07-18 薄膜トランジスタ表示板及びその製造方法 Expired - Fee Related JP4644417B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020020042659A KR100878238B1 (ko) 2002-07-19 2002-07-19 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR1020020068107A KR100878278B1 (ko) 2002-11-05 2002-11-05 박막 트랜지스터 어레이 기판 및 그 제조 방법

Publications (3)

Publication Number Publication Date
JP2004056153A JP2004056153A (ja) 2004-02-19
JP2004056153A5 JP2004056153A5 (enExample) 2006-08-31
JP4644417B2 true JP4644417B2 (ja) 2011-03-02

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JP2003277161A Expired - Fee Related JP4644417B2 (ja) 2002-07-19 2003-07-18 薄膜トランジスタ表示板及びその製造方法

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Country Link
US (3) US7205570B2 (enExample)
JP (1) JP4644417B2 (enExample)
CN (1) CN100378902C (enExample)
TW (1) TWI311815B (enExample)

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US7205570B2 (en) * 2002-07-19 2007-04-17 Samsung Electronics Co., Ltd. Thin film transistor array panel
US7172913B2 (en) * 2004-03-19 2007-02-06 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
JP4802462B2 (ja) * 2004-07-27 2011-10-26 三菱電機株式会社 薄膜トランジスタアレイ基板の製造方法
KR101112538B1 (ko) 2004-07-27 2012-03-13 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20060016920A (ko) * 2004-08-19 2006-02-23 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101066303B1 (ko) * 2004-09-09 2011-09-20 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR101102261B1 (ko) * 2004-09-15 2012-01-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR20060030577A (ko) 2004-10-06 2006-04-11 삼성전자주식회사 박막 트랜지스터 표시판
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KR101369864B1 (ko) * 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
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KR20080000788A (ko) * 2006-06-28 2008-01-03 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
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TWI746064B (zh) 2009-08-07 2021-11-11 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI426566B (zh) * 2009-11-05 2014-02-11 國立臺灣大學 薄膜電晶體與其製法
KR101582946B1 (ko) * 2009-12-04 2016-01-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
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KR101741732B1 (ko) * 2010-05-07 2017-05-31 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
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Also Published As

Publication number Publication date
US20040056251A1 (en) 2004-03-25
US7632723B2 (en) 2009-12-15
TW200402888A (en) 2004-02-16
US20070138474A1 (en) 2007-06-21
US7615784B2 (en) 2009-11-10
US20070138481A1 (en) 2007-06-21
US7205570B2 (en) 2007-04-17
CN1495851A (zh) 2004-05-12
JP2004056153A (ja) 2004-02-19
TWI311815B (en) 2009-07-01
CN100378902C (zh) 2008-04-02

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