CN100378902C - 薄膜晶体管阵列板及其制造方法 - Google Patents

薄膜晶体管阵列板及其制造方法 Download PDF

Info

Publication number
CN100378902C
CN100378902C CNB031514987A CN03151498A CN100378902C CN 100378902 C CN100378902 C CN 100378902C CN B031514987 A CNB031514987 A CN B031514987A CN 03151498 A CN03151498 A CN 03151498A CN 100378902 C CN100378902 C CN 100378902C
Authority
CN
China
Prior art keywords
layer
conductive layer
transistor array
film transistor
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031514987A
Other languages
English (en)
Chinese (zh)
Other versions
CN1495851A (zh
Inventor
金东奎
金相洙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020020042659A external-priority patent/KR100878238B1/ko
Priority claimed from KR1020020068107A external-priority patent/KR100878278B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1495851A publication Critical patent/CN1495851A/zh
Application granted granted Critical
Publication of CN100378902C publication Critical patent/CN100378902C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CNB031514987A 2002-07-19 2003-07-19 薄膜晶体管阵列板及其制造方法 Expired - Fee Related CN100378902C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR0042659/02 2002-07-19
KR0042659/2002 2002-07-19
KR1020020042659A KR100878238B1 (ko) 2002-07-19 2002-07-19 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR1020020068107A KR100878278B1 (ko) 2002-11-05 2002-11-05 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR0068107/2002 2002-11-05
KR0068107/02 2002-11-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101727220A Division CN1992295A (zh) 2002-07-19 2003-07-19 薄膜晶体管阵列板及其制造方法

Publications (2)

Publication Number Publication Date
CN1495851A CN1495851A (zh) 2004-05-12
CN100378902C true CN100378902C (zh) 2008-04-02

Family

ID=31949615

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031514987A Expired - Fee Related CN100378902C (zh) 2002-07-19 2003-07-19 薄膜晶体管阵列板及其制造方法

Country Status (4)

Country Link
US (3) US7205570B2 (enExample)
JP (1) JP4644417B2 (enExample)
CN (1) CN100378902C (enExample)
TW (1) TWI311815B (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524876B1 (en) * 1999-04-08 2003-02-25 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
US7205570B2 (en) * 2002-07-19 2007-04-17 Samsung Electronics Co., Ltd. Thin film transistor array panel
US7172913B2 (en) * 2004-03-19 2007-02-06 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
JP4802462B2 (ja) * 2004-07-27 2011-10-26 三菱電機株式会社 薄膜トランジスタアレイ基板の製造方法
KR101112538B1 (ko) 2004-07-27 2012-03-13 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20060016920A (ko) * 2004-08-19 2006-02-23 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101066303B1 (ko) * 2004-09-09 2011-09-20 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR101102261B1 (ko) * 2004-09-15 2012-01-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101090252B1 (ko) * 2004-09-24 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR20060030577A (ko) 2004-10-06 2006-04-11 삼성전자주식회사 박막 트랜지스터 표시판
TWI252587B (en) 2004-12-14 2006-04-01 Quanta Display Inc Method for manufacturing a pixel electrode contact of a thin-film transistors liquid crystal display
CN100371814C (zh) * 2005-01-26 2008-02-27 广辉电子股份有限公司 薄膜晶体管液晶显示器的像素电极接触点的制造方法
KR101160829B1 (ko) * 2005-02-15 2012-06-29 삼성전자주식회사 식각액 조성물 및 박막 트랜지스터 표시판의 제조 방법
KR101133766B1 (ko) * 2005-03-29 2012-04-09 삼성전자주식회사 박막 트랜지스터 표시판의 제조 방법
US7911568B2 (en) * 2005-05-13 2011-03-22 Samsung Electronics Co., Ltd. Multi-layered thin films, thin film transistor array panel including the same, and method of manufacturing the panel
KR101369864B1 (ko) * 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
KR101184640B1 (ko) * 2006-03-15 2012-09-20 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN100426511C (zh) * 2006-06-23 2008-10-15 北京京东方光电科技有限公司 一种薄膜晶体管器件阵列基板结构及其制造方法
CN100433338C (zh) * 2006-06-23 2008-11-12 北京京东方光电科技有限公司 一种薄膜晶体管器件阵列基板结构及其制造方法
KR20080000788A (ko) * 2006-06-28 2008-01-03 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
US8766448B2 (en) * 2007-06-25 2014-07-01 Sensor Electronic Technology, Inc. Chromium/Titanium/Aluminum-based semiconductor device contact
US9064845B2 (en) 2007-06-25 2015-06-23 Sensor Electronic Technology, Inc. Methods of fabricating a chromium/titanium/aluminum-based semiconductor device contact
US9514947B2 (en) 2007-06-25 2016-12-06 Sensor Electronic Technology, Inc. Chromium/titanium/aluminum-based semiconductor device contact fabrication
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
KR101414043B1 (ko) * 2007-12-04 2014-07-21 삼성디스플레이 주식회사 박막 트랜지스터 기판
TW201039034A (en) * 2009-04-27 2010-11-01 Chunghwa Picture Tubes Ltd Pixel structure and the method of forming the same
KR101571803B1 (ko) * 2009-06-09 2015-11-26 삼성디스플레이 주식회사 어레이 기판 및 이의 제조 방법
TWI746064B (zh) 2009-08-07 2021-11-11 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI426566B (zh) * 2009-11-05 2014-02-11 國立臺灣大學 薄膜電晶體與其製法
KR101582946B1 (ko) * 2009-12-04 2016-01-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
WO2011070901A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8288767B2 (en) * 2010-01-04 2012-10-16 National Taiwan University Thin-film transistor and forming method thereof
KR20110116803A (ko) * 2010-04-20 2011-10-26 삼성전자주식회사 표시 기판, 이를 포함하는 액정 표시 장치 및 이의 제조 방법
KR101741732B1 (ko) * 2010-05-07 2017-05-31 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5667868B2 (ja) * 2010-12-24 2015-02-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2014042125A1 (ja) 2012-09-12 2014-03-20 シャープ株式会社 半導体装置およびその製造方法
CN102881598B (zh) * 2012-09-17 2015-08-12 京东方科技集团股份有限公司 薄膜晶体管的制造方法、阵列基板的制造方法及显示装置
CN105914227A (zh) * 2016-06-01 2016-08-31 京东方科技集团股份有限公司 一种走线结构、阵列基板及其制备方法、显示面板
CN106935598B (zh) * 2017-04-05 2019-08-27 上海中航光电子有限公司 阵列基板及其制造方法、触控面板和触控装置
KR20220010622A (ko) * 2020-07-16 2022-01-26 삼성디스플레이 주식회사 표시 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1165568A (zh) * 1995-10-03 1997-11-19 精工爱普生株式会社 有源矩阵基板
US5986738A (en) * 1995-10-31 1999-11-16 Sharp Kabushiki Kaisha Transmission type liquid crystal display device and the method for fabricating the same
JPH11352515A (ja) * 1998-06-09 1999-12-24 Mitsubishi Electric Corp 液晶表示装置およびその製造方法
US6087678A (en) * 1996-02-29 2000-07-11 Samsung Electronics Co., Ltd. Thin-film transistor display devices having composite electrodes

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05323373A (ja) * 1992-05-22 1993-12-07 Fujitsu Ltd 薄膜トランジスタパネルの製造方法
JP3281167B2 (ja) * 1994-03-17 2002-05-13 富士通株式会社 薄膜トランジスタの製造方法
JP4363684B2 (ja) * 1998-09-02 2009-11-11 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ基板およびこれを用いた液晶表示装置
KR100330097B1 (ko) 1998-12-21 2002-10-25 삼성전자 주식회사 액정표시장치용박막트랜지스터기판및그제조방법
KR100623974B1 (ko) 1998-12-08 2006-12-05 삼성전자주식회사 액정 표시 장치 및 그 제조 방법
US6885064B2 (en) * 2000-01-07 2005-04-26 Samsung Electronics Co., Ltd. Contact structure of wiring and a method for manufacturing the same
TWI253538B (en) * 2000-09-30 2006-04-21 Au Optronics Corp Thin film transistor flat display and its manufacturing method
KR100720095B1 (ko) * 2000-11-07 2007-05-18 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR100729764B1 (ko) 2000-11-15 2007-06-20 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
US6511869B2 (en) * 2000-12-05 2003-01-28 International Business Machines Corporation Thin film transistors with self-aligned transparent pixel electrode
JP2002296609A (ja) * 2001-03-29 2002-10-09 Nec Corp 液晶表示装置及びその製造方法
KR20020083249A (ko) 2001-04-26 2002-11-02 삼성전자 주식회사 배선의 접촉 구조 및 그의 제조 방법과 이를 포함하는박막 트랜지스터 기판 및 그 제조 방법
KR100864490B1 (ko) 2002-06-07 2008-10-20 삼성전자주식회사 배선의 접촉부 및 이를 포함하는 박막 트랜지스터 기판
US7205570B2 (en) * 2002-07-19 2007-04-17 Samsung Electronics Co., Ltd. Thin film transistor array panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1165568A (zh) * 1995-10-03 1997-11-19 精工爱普生株式会社 有源矩阵基板
US5986738A (en) * 1995-10-31 1999-11-16 Sharp Kabushiki Kaisha Transmission type liquid crystal display device and the method for fabricating the same
US6087678A (en) * 1996-02-29 2000-07-11 Samsung Electronics Co., Ltd. Thin-film transistor display devices having composite electrodes
JPH11352515A (ja) * 1998-06-09 1999-12-24 Mitsubishi Electric Corp 液晶表示装置およびその製造方法

Also Published As

Publication number Publication date
US20040056251A1 (en) 2004-03-25
US7632723B2 (en) 2009-12-15
TW200402888A (en) 2004-02-16
US20070138474A1 (en) 2007-06-21
JP4644417B2 (ja) 2011-03-02
US7615784B2 (en) 2009-11-10
US20070138481A1 (en) 2007-06-21
US7205570B2 (en) 2007-04-17
CN1495851A (zh) 2004-05-12
JP2004056153A (ja) 2004-02-19
TWI311815B (en) 2009-07-01

Similar Documents

Publication Publication Date Title
CN100378902C (zh) 薄膜晶体管阵列板及其制造方法
US6642580B1 (en) Thin film transistor array substrate and manufacturing method thereof
JP4481759B2 (ja) 薄膜トランジスタ表示板及びその製造方法
CN1519955B (zh) 薄膜晶体管阵列面板及其制造方法和用于该面板的掩膜
US20080299712A1 (en) Manufacturing method of a thin film transistor array panel
US20090002587A1 (en) Thin film transistor array panel and a manufacturing method thereof
US7666697B2 (en) Thin film transistor substrate and method of manufacturing the same
KR101046928B1 (ko) 박막 트랜지스터 표시판과 그 제조방법
CN100524702C (zh) 薄膜晶体管阵列面板及其制造方法
KR20060028519A (ko) 박막트랜지스터 표시판 및 그 제조 방법
CN1983604A (zh) 液晶显示器的薄膜晶体管阵列板及其制造方法
KR101160823B1 (ko) 박막 트랜지스터 표시판과 그 제조 방법
JP2004013003A (ja) 液晶表示装置
KR100973809B1 (ko) 박막 트랜지스터 표시판 및 그의 제조 방법
US20170263646A1 (en) Thin film transistor array panel and a method for manufacturing the same
CN101655643A (zh) 薄膜晶体管阵列面板的制造方法
JP2003215634A (ja) 薄膜トランジスタ液晶表示装置
KR20060020895A (ko) 박막 트랜지스터 표시판의 제조 방법
KR20060023396A (ko) 박막 트랜지스터 표시판과 그 제조 방법
KR20050114399A (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR20060082313A (ko) 액정 표시 장치
KR20070070738A (ko) 박막 트랜지스터 표시판의 제조 방법
KR20060063250A (ko) 박막 트랜지스터 표시판의 제조 방법
KR20050106196A (ko) 박막 트랜지스터 표시판 및 그 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG MONITOR CO., LTD.

Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD.

Effective date: 20121029

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121029

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co., Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co., Ltd.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080402

Termination date: 20120719