JP4615707B2 - デュアルダマシン金属化方法 - Google Patents

デュアルダマシン金属化方法 Download PDF

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Publication number
JP4615707B2
JP4615707B2 JP2000510165A JP2000510165A JP4615707B2 JP 4615707 B2 JP4615707 B2 JP 4615707B2 JP 2000510165 A JP2000510165 A JP 2000510165A JP 2000510165 A JP2000510165 A JP 2000510165A JP 4615707 B2 JP4615707 B2 JP 4615707B2
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copper
layer
barrier layer
conductive material
cvd
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JP2000510165A
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JP2001516146A (ja
JP2001516146A5 (enExample
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リャン−ユ チャン，
ロン タオ，
テッド グオ，
ロデリック， クレイグ モーズリー，
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Applied Materials Inc
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Applied Materials Inc
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    • H10W20/033—
    • H10W20/045—
    • H10W20/0523—
    • H10W20/056—
    • H10W20/076—
    • H10W20/084—

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000510165A 1997-08-19 1998-08-17 デュアルダマシン金属化方法 Expired - Fee Related JP4615707B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/914,521 1997-08-19
US08/914,521 US5989623A (en) 1997-08-19 1997-08-19 Dual damascene metallization
PCT/US1998/017010 WO1999009593A1 (en) 1997-08-19 1998-08-17 Dual damascene metallization

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JP2001516146A JP2001516146A (ja) 2001-09-25
JP2001516146A5 JP2001516146A5 (enExample) 2009-11-19
JP4615707B2 true JP4615707B2 (ja) 2011-01-19

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JP2000510165A Expired - Fee Related JP4615707B2 (ja) 1997-08-19 1998-08-17 デュアルダマシン金属化方法

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US (2) US5989623A (enExample)
EP (1) EP1021827B1 (enExample)
JP (1) JP4615707B2 (enExample)
KR (1) KR100506139B1 (enExample)
DE (1) DE69837674T2 (enExample)
WO (1) WO1999009593A1 (enExample)

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DE69837674D1 (de) 2007-06-06
US5989623A (en) 1999-11-23
KR20010023055A (ko) 2001-03-26
WO1999009593A1 (en) 1999-02-25
US6207222B1 (en) 2001-03-27
EP1021827A1 (en) 2000-07-26
EP1021827B1 (en) 2007-04-25
DE69837674T2 (de) 2008-01-10
JP2001516146A (ja) 2001-09-25
KR100506139B1 (ko) 2005-08-05

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