SG90054A1 - A new process of dual damascene structure - Google Patents

A new process of dual damascene structure

Info

Publication number
SG90054A1
SG90054A1 SG9902990A SG1999002990A SG90054A1 SG 90054 A1 SG90054 A1 SG 90054A1 SG 9902990 A SG9902990 A SG 9902990A SG 1999002990 A SG1999002990 A SG 1999002990A SG 90054 A1 SG90054 A1 SG 90054A1
Authority
SG
Singapore
Prior art keywords
new process
dual damascene
damascene structure
dual
new
Prior art date
Application number
SG9902990A
Inventor
Chan Lap
Cher Liang Cha
Wye Boon Loh
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG90054A1 publication Critical patent/SG90054A1/en

Links

SG9902990A 1999-02-11 1999-06-21 A new process of dual damascene structure SG90054A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24872999A 1999-02-11 1999-02-11

Publications (1)

Publication Number Publication Date
SG90054A1 true SG90054A1 (en) 2002-07-23

Family

ID=22940419

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9902990A SG90054A1 (en) 1999-02-11 1999-06-21 A new process of dual damascene structure

Country Status (1)

Country Link
SG (1) SG90054A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219787A (en) * 1990-07-23 1993-06-15 Microelectronics And Computer Technology Corporation Trenching techniques for forming channels, vias and components in substrates
US5989623A (en) * 1997-08-19 1999-11-23 Applied Materials, Inc. Dual damascene metallization
US6025279A (en) * 1998-05-29 2000-02-15 Taiwan Semiconductor Manufacturing Company Method of reducing nitride and oxide peeling after planarization using an anneal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219787A (en) * 1990-07-23 1993-06-15 Microelectronics And Computer Technology Corporation Trenching techniques for forming channels, vias and components in substrates
US5989623A (en) * 1997-08-19 1999-11-23 Applied Materials, Inc. Dual damascene metallization
US6025279A (en) * 1998-05-29 2000-02-15 Taiwan Semiconductor Manufacturing Company Method of reducing nitride and oxide peeling after planarization using an anneal

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