SG90054A1 - A new process of dual damascene structure - Google Patents
A new process of dual damascene structureInfo
- Publication number
- SG90054A1 SG90054A1 SG9902990A SG1999002990A SG90054A1 SG 90054 A1 SG90054 A1 SG 90054A1 SG 9902990 A SG9902990 A SG 9902990A SG 1999002990 A SG1999002990 A SG 1999002990A SG 90054 A1 SG90054 A1 SG 90054A1
- Authority
- SG
- Singapore
- Prior art keywords
- new process
- dual damascene
- damascene structure
- dual
- new
- Prior art date
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24872999A | 1999-02-11 | 1999-02-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG90054A1 true SG90054A1 (en) | 2002-07-23 |
Family
ID=22940419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG9902990A SG90054A1 (en) | 1999-02-11 | 1999-06-21 | A new process of dual damascene structure |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG90054A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219787A (en) * | 1990-07-23 | 1993-06-15 | Microelectronics And Computer Technology Corporation | Trenching techniques for forming channels, vias and components in substrates |
US5989623A (en) * | 1997-08-19 | 1999-11-23 | Applied Materials, Inc. | Dual damascene metallization |
US6025279A (en) * | 1998-05-29 | 2000-02-15 | Taiwan Semiconductor Manufacturing Company | Method of reducing nitride and oxide peeling after planarization using an anneal |
-
1999
- 1999-06-21 SG SG9902990A patent/SG90054A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219787A (en) * | 1990-07-23 | 1993-06-15 | Microelectronics And Computer Technology Corporation | Trenching techniques for forming channels, vias and components in substrates |
US5989623A (en) * | 1997-08-19 | 1999-11-23 | Applied Materials, Inc. | Dual damascene metallization |
US6025279A (en) * | 1998-05-29 | 2000-02-15 | Taiwan Semiconductor Manufacturing Company | Method of reducing nitride and oxide peeling after planarization using an anneal |
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