GB2325083B - A dual damascene process - Google Patents

A dual damascene process

Info

Publication number
GB2325083B
GB2325083B GB9709431A GB9709431A GB2325083B GB 2325083 B GB2325083 B GB 2325083B GB 9709431 A GB9709431 A GB 9709431A GB 9709431 A GB9709431 A GB 9709431A GB 2325083 B GB2325083 B GB 2325083B
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
dual damascene
damascene process
process
dual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9709431A
Other versions
GB2325083A (en )
GB9709431D0 (en )
Inventor
Tri-Rung Yew
Mong-Chung Liu
Water Lur
Shih-Wei Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
GB9709431A 1997-02-28 1997-05-09 A dual damascene process Expired - Fee Related GB2325083B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB9709431A GB2325083B (en) 1997-05-09 1997-05-09 A dual damascene process
DE1997119909 DE19719909A1 (en) 1997-05-09 1997-05-13 Dual damascene process for integrated circuits
FR9705992A FR2763424B1 (en) 1997-05-09 1997-05-15 Process dual damascene
JP14035397A JPH10335456A (en) 1997-05-09 1997-05-29 Manufacture of integrated circuit
NL1006162A NL1006162C2 (en) 1997-05-09 1997-05-29 A process for the manufacture of an integrated circuit having conductor structures.
US08873500 US5801094A (en) 1997-02-28 1997-06-12 Dual damascene process

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB9709431A GB2325083B (en) 1997-05-09 1997-05-09 A dual damascene process
DE1997119909 DE19719909A1 (en) 1997-05-09 1997-05-13 Dual damascene process for integrated circuits
FR9705992A FR2763424B1 (en) 1997-05-09 1997-05-15 Process dual damascene
JP14035397A JPH10335456A (en) 1997-05-09 1997-05-29 Manufacture of integrated circuit
NL1006162A NL1006162C2 (en) 1997-05-09 1997-05-29 A process for the manufacture of an integrated circuit having conductor structures.
US08873500 US5801094A (en) 1997-02-28 1997-06-12 Dual damascene process

Publications (3)

Publication Number Publication Date
GB9709431D0 true GB9709431D0 (en) 1997-07-02
GB2325083A true GB2325083A (en) 1998-11-11
GB2325083B true GB2325083B (en) 1999-04-14

Family

ID=27545067

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9709431A Expired - Fee Related GB2325083B (en) 1997-02-28 1997-05-09 A dual damascene process

Country Status (5)

Country Link
JP (1) JPH10335456A (en)
DE (1) DE19719909A1 (en)
FR (1) FR2763424B1 (en)
GB (1) GB2325083B (en)
NL (1) NL1006162C2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346454B1 (en) * 1999-01-12 2002-02-12 Agere Systems Guardian Corp. Method of making dual damascene interconnect structure and metal electrode capacitor
JP3502288B2 (en) 1999-03-19 2004-03-02 富士通株式会社 Semiconductor device and manufacturing method thereof
US6313025B1 (en) * 1999-08-30 2001-11-06 Agere Systems Guardian Corp. Process for manufacturing an integrated circuit including a dual-damascene structure and an integrated circuit
JP4858895B2 (en) * 2000-07-21 2012-01-18 富士通セミコンダクター株式会社 A method of manufacturing a semiconductor device
JP2011077468A (en) * 2009-10-02 2011-04-14 Panasonic Corp Semiconductor device manufacturing method and semiconductor device
JP5891846B2 (en) * 2012-02-24 2016-03-23 富士通セミコンダクター株式会社 A method of manufacturing a semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224013A2 (en) * 1985-10-28 1987-06-03 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate
EP0435187A2 (en) * 1989-12-26 1991-07-03 Fujitsu Limited Method of fabricating a semiconductor device
US5466639A (en) * 1994-10-06 1995-11-14 Micron Semiconductor, Inc. Double mask process for forming trenches and contacts during the formation of a semiconductor memory device
WO1996012297A2 (en) * 1994-10-11 1996-04-25 Advanced Micro Devices, Inc. Simplified dual damascene process for multilevel metallization and interconnection structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5246883A (en) * 1992-02-06 1993-09-21 Sgs-Thomson Microelectronics, Inc. Semiconductor contact via structure and method
US5801094A (en) * 1997-02-28 1998-09-01 United Microelectronics Corporation Dual damascene process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224013A2 (en) * 1985-10-28 1987-06-03 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate
EP0435187A2 (en) * 1989-12-26 1991-07-03 Fujitsu Limited Method of fabricating a semiconductor device
US5466639A (en) * 1994-10-06 1995-11-14 Micron Semiconductor, Inc. Double mask process for forming trenches and contacts during the formation of a semiconductor memory device
WO1996012297A2 (en) * 1994-10-11 1996-04-25 Advanced Micro Devices, Inc. Simplified dual damascene process for multilevel metallization and interconnection structure

Also Published As

Publication number Publication date Type
DE19719909A1 (en) 1998-11-19 application
GB2325083A (en) 1998-11-11 application
GB9709431D0 (en) 1997-07-02 application
FR2763424A1 (en) 1998-11-20 application
JPH10335456A (en) 1998-12-18 application
FR2763424B1 (en) 2003-06-27 grant
NL1006162C2 (en) 1998-12-01 grant

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20140509