JP4609497B2 - 固体撮像装置とその製造方法、及びカメラ - Google Patents

固体撮像装置とその製造方法、及びカメラ Download PDF

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Publication number
JP4609497B2
JP4609497B2 JP2008010904A JP2008010904A JP4609497B2 JP 4609497 B2 JP4609497 B2 JP 4609497B2 JP 2008010904 A JP2008010904 A JP 2008010904A JP 2008010904 A JP2008010904 A JP 2008010904A JP 4609497 B2 JP4609497 B2 JP 4609497B2
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film
imaging device
semiconductor layer
layer
state imaging
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JP2008010904A
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JP2009176777A (ja
JP2009176777A5 (https=
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健太郎 秋山
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Sony Corp
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Sony Corp
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Priority to JP2008010904A priority Critical patent/JP4609497B2/ja
Priority to TW097151260A priority patent/TWI407554B/zh
Priority to US12/354,457 priority patent/US8300127B2/en
Priority to EP09000727A priority patent/EP2081229B1/en
Priority to CN201010565727.6A priority patent/CN102130140B/zh
Priority to CN2009100010869A priority patent/CN101494234B/zh
Priority to KR1020090005041A priority patent/KR101556628B1/ko
Publication of JP2009176777A publication Critical patent/JP2009176777A/ja
Publication of JP2009176777A5 publication Critical patent/JP2009176777A5/ja
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Publication of JP4609497B2 publication Critical patent/JP4609497B2/ja
Priority to US13/178,640 priority patent/US8363136B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0265—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the sidewall insulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2008010904A 2008-01-21 2008-01-21 固体撮像装置とその製造方法、及びカメラ Expired - Fee Related JP4609497B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2008010904A JP4609497B2 (ja) 2008-01-21 2008-01-21 固体撮像装置とその製造方法、及びカメラ
TW097151260A TWI407554B (zh) 2008-01-21 2008-12-29 固態影像裝置、製造固態影像裝置之方法及攝影機
US12/354,457 US8300127B2 (en) 2008-01-21 2009-01-15 Solid-state imaging device, method of fabricating solid-state imaging device, and camera
EP09000727A EP2081229B1 (en) 2008-01-21 2009-01-20 Solid-state imaging device, method of fabricating solid-state imaging device
CN201010565727.6A CN102130140B (zh) 2008-01-21 2009-01-21 固体摄像装置
CN2009100010869A CN101494234B (zh) 2008-01-21 2009-01-21 固体摄像装置、固体摄像装置制造方法以及照相机
KR1020090005041A KR101556628B1 (ko) 2008-01-21 2009-01-21 고체 촬상 장치와 그 제조 방법, 및 카메라
US13/178,640 US8363136B2 (en) 2008-01-21 2011-07-08 Solid-state imaging device, method of fabricating solid-state imaging device, and camera

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008010904A JP4609497B2 (ja) 2008-01-21 2008-01-21 固体撮像装置とその製造方法、及びカメラ

Related Child Applications (2)

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JP2010138666A Division JP5327146B2 (ja) 2010-06-17 2010-06-17 固体撮像装置とその製造方法、及びカメラ
JP2010138667A Division JP2010212735A (ja) 2010-06-17 2010-06-17 固体撮像装置とその製造方法、及びカメラ

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JP2009176777A JP2009176777A (ja) 2009-08-06
JP2009176777A5 JP2009176777A5 (https=) 2010-03-11
JP4609497B2 true JP4609497B2 (ja) 2011-01-12

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Country Link
US (2) US8300127B2 (https=)
EP (1) EP2081229B1 (https=)
JP (1) JP4609497B2 (https=)
KR (1) KR101556628B1 (https=)
CN (2) CN101494234B (https=)
TW (1) TWI407554B (https=)

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US20110261223A1 (en) 2011-10-27
US8300127B2 (en) 2012-10-30
TW200939465A (en) 2009-09-16
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US8363136B2 (en) 2013-01-29
US20090185060A1 (en) 2009-07-23
CN101494234A (zh) 2009-07-29
JP2009176777A (ja) 2009-08-06
CN102130140B (zh) 2015-06-17
TWI407554B (zh) 2013-09-01
KR101556628B1 (ko) 2015-10-01
EP2081229A2 (en) 2009-07-22
CN102130140A (zh) 2011-07-20

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