JP5693060B2 - 固体撮像装置、及び撮像システム - Google Patents
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- H—ELECTRICITY
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- H01L27/144—Devices controlled by radiation
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- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14636—Interconnect structures
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
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- H01L27/144—Devices controlled by radiation
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- Electromagnetism (AREA)
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- Solid State Image Pick-Up Elements (AREA)
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Description
本発明の実施例1について、図1から図6を用いて説明する。
本発明の実施例2について、図7を用いて説明する。図7(A)及び図7(B)は固体撮像装置の断面模式図であり、それぞれ図1に対応する図面である。図7において図1と同様の構成については同一の符号を付し、説明を省略する。
本発明の実施例3について、図8を用いて説明する。図8(C)は本実施例の固体撮像装置の断面模式図であり図1に対応する図面である。また、図8(A)及び図8(B)は本実施例の固体撮像装置の製造方法を説明するための断面模式図であり、図6に対応する図面である。図8において図1及び図6と同様の構成については同一の符号を付し、説明を省略する。
本発明の実施例4について、図9を用いて説明する。図9は固体撮像装置の断面模式図であり、図1に対応する図面である。図9において図1と同様の構成については同一の符号を付し、説明を省略する。
302 周辺回路部
308 第1部材
309 第2部材
149 第1配線構造
150 第2配線構造
312 パッド部
313 パッド
315 保護ダイオード回路
101 第1基板
121 第2基板
100 開口
X 接続面
Claims (11)
- 光電変換素子が配された第1基板と、
前記光電変換素子の電荷に基づく信号を読み出すための読み出し回路及び制御回路を含む周辺回路の少なくとも一部が配された第2基板と、
前記第1基板と前記第2基板の間に配された配線構造と、を有する固体撮像装置において、
前記固体撮像装置は、前記光電変換素子で生じた電荷に基づく信号を前記固体撮像装置の外部へ出力する、あるいは、前記周辺回路を駆動するための電圧が前記固体撮像装置の外部から入力されるパッドと、前記パッドに前記配線構造を介して接続された保護ダイオード回路と、を有し、
前記保護ダイオード回路は前記第1基板ではなく前記第2基板に配されていることを特徴とする固体撮像装置。 - 前記第2基板は、前記第1基板において前記光電変換素子が配された領域に重なる第1領域と、前記第1基板において前記光電変換素子が配された領域に重ならない第2領域と、を有し、前記保護ダイオード回路は、前記第2領域に複数配置されていることを特徴とする請求項1に記載の固体撮像装置。
- 前記第1基板の前記光電変換素子が配された領域以外の領域に、前記周辺回路の一部の回路素子が配されていることを特徴とする請求項1あるいは2に記載の固体撮像装置。
- 前記保護ダイオード回路は、少なくとも1つのダイオードおよび1つの抵抗、または、少なくとも2つのダイオードを有することを特徴とする請求項1乃至3のいずれか1項に記載の固体撮像装置。
- 前記保護ダイオード回路は絶縁体で構成された素子分離構造で囲まれていることを特徴とする請求項1乃至4のいずれか1項に記載の固体撮像装置。
- 前記保護ダイオード回路は前記パッドよりも前記第1基板および前記第2基板の端面から離れた位置に配されることを特徴とする請求項1乃至5のいずれか1項に記載の固体撮像装置。
- 前記配線構造は、前記第1基板の上に配された第1配線構造と、前記第2基板の上に配された第2配線構造とを含み、前記第1基板、前記第1配線構造、前記第2配線構造、及び前記第2基板がこの順に配置されており、
前記パッドは前記第1配線構造の配線層と同一の層に配されていることを特徴とする請求項1乃至6のいずれか1項に記載の固体撮像装置。 - 前記配線構造は、前記第1基板の上に配された第1配線構造と、前記第2基板の上に配された第2配線構造とを含み、前記第1基板、前記第1配線構造、前記第2配線構造、及び前記第2基板がこの順に配置されており、
前記パッドは前記第2配線構造の配線層と同一の層に配されていることを特徴とする請求項1乃至6のいずれか1項に記載の固体撮像装置。 - 前記パッドは、アルミニウムを主成分とし、前記パッドを露出する開口が前記第2基板ではなく前記第1基板に設けられていることを特徴とする請求項1乃至8のいずれか1項に記載の固体撮像装置。
- 前記第2基板には、前記光電変換素子の電荷に基づく信号を出力するための増幅トランジスタと、前記光電変換素子の電荷をリセットするためのリセットトランジスタとが配されていることを特徴とする請求項1乃至9のいずれか1項に記載の固体撮像装置。
- 請求項1乃至10のいずれか1項に記載の固体撮像装置と、
前記固体撮像装置からの信号を処理する信号処理回路と、を有する撮像システム。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010149484A JP5693060B2 (ja) | 2010-06-30 | 2010-06-30 | 固体撮像装置、及び撮像システム |
US13/807,084 US9252169B2 (en) | 2010-06-30 | 2011-06-22 | Solid-state imaging device and imaging system |
PCT/JP2011/003570 WO2012001916A1 (en) | 2010-06-30 | 2011-06-22 | Solid-state imaging device and imaging system |
US14/992,234 US9899449B2 (en) | 2010-06-30 | 2016-01-11 | Solid-state imaging device and imaging system |
US15/868,804 US10304899B2 (en) | 2010-06-30 | 2018-01-11 | Solid-state imaging device and imaging system |
US16/393,662 US11102440B2 (en) | 2010-06-30 | 2019-04-24 | Solid-state imaging device and imaging system |
US17/390,605 US20210360186A1 (en) | 2010-06-30 | 2021-07-30 | Solid-state imaging device and imaging system |
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JP2010149484A JP5693060B2 (ja) | 2010-06-30 | 2010-06-30 | 固体撮像装置、及び撮像システム |
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JP2012015277A JP2012015277A (ja) | 2012-01-19 |
JP5693060B2 true JP5693060B2 (ja) | 2015-04-01 |
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US (5) | US9252169B2 (ja) |
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WO (1) | WO2012001916A1 (ja) |
Cited By (1)
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JP5693060B2 (ja) * | 2010-06-30 | 2015-04-01 | キヤノン株式会社 | 固体撮像装置、及び撮像システム |
JP6018376B2 (ja) * | 2011-12-05 | 2016-11-02 | キヤノン株式会社 | 固体撮像装置およびカメラ |
TWI467736B (zh) * | 2012-01-04 | 2015-01-01 | Univ Nat Chiao Tung | 立體積體電路裝置 |
JP6016378B2 (ja) | 2012-02-29 | 2016-10-26 | キヤノン株式会社 | 光電変換装置、および光電変換装置を用いた撮像システム |
US9153565B2 (en) | 2012-06-01 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensors with a high fill-factor |
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US12002831B2 (en) | 2018-08-31 | 2024-06-04 | Sony Semiconductor Solutions Corporation | Semiconductor device |
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