JP4590905B2 - 発光素子および発光装置 - Google Patents
発光素子および発光装置 Download PDFInfo
- Publication number
- JP4590905B2 JP4590905B2 JP2004109431A JP2004109431A JP4590905B2 JP 4590905 B2 JP4590905 B2 JP 4590905B2 JP 2004109431 A JP2004109431 A JP 2004109431A JP 2004109431 A JP2004109431 A JP 2004109431A JP 4590905 B2 JP4590905 B2 JP 4590905B2
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- Prior art keywords
- light
- layer
- light emitting
- led element
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
- H10W72/07252—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in structures or sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
- H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/227—Multiple bumps having different sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
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- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004109431A JP4590905B2 (ja) | 2003-10-31 | 2004-04-01 | 発光素子および発光装置 |
| US10/974,945 US7388232B2 (en) | 2003-10-31 | 2004-10-28 | Light emitting element and light emitting device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003373273 | 2003-10-31 | ||
| JP2003401120 | 2003-12-01 | ||
| JP2004109431A JP4590905B2 (ja) | 2003-10-31 | 2004-04-01 | 発光素子および発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005191514A JP2005191514A (ja) | 2005-07-14 |
| JP2005191514A5 JP2005191514A5 (https=) | 2006-11-02 |
| JP4590905B2 true JP4590905B2 (ja) | 2010-12-01 |
Family
ID=34799298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004109431A Expired - Fee Related JP4590905B2 (ja) | 2003-10-31 | 2004-04-01 | 発光素子および発光装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7388232B2 (https=) |
| JP (1) | JP4590905B2 (https=) |
Families Citing this family (124)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100502062C (zh) | 2003-04-30 | 2009-06-17 | 美商克立股份有限公司 | 具有小型光学元件的高功率发光器封装 |
| US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
| DE102004001312B4 (de) * | 2003-07-25 | 2010-09-30 | Seoul Semiconductor Co., Ltd. | Chip-Leuchtdiode und Verfahren zu ihrer Herstellung |
| US6972438B2 (en) * | 2003-09-30 | 2005-12-06 | Cree, Inc. | Light emitting diode with porous SiC substrate and method for fabricating |
| JP2005191219A (ja) * | 2003-12-25 | 2005-07-14 | Sanken Electric Co Ltd | 半導体発光素子およびその製造方法 |
| US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| KR100638666B1 (ko) * | 2005-01-03 | 2006-10-30 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
| US20110284866A1 (en) * | 2005-01-11 | 2011-11-24 | Tran Chuong A | Light-emitting diode (led) structure having a wavelength-converting layer and method of producing |
| US8680534B2 (en) | 2005-01-11 | 2014-03-25 | Semileds Corporation | Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light |
| US7413918B2 (en) | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
| JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
| KR100638819B1 (ko) * | 2005-05-19 | 2006-10-27 | 삼성전기주식회사 | 광추출효율이 개선된 수직구조 질화물 반도체 발광소자 |
| DE102005026206A1 (de) * | 2005-06-07 | 2006-12-14 | Siemens Ag | Lichterzeugende Anordnung |
| DE112006001835T5 (de) * | 2005-07-11 | 2008-05-15 | GELcore, LLC (n.d.Ges.d. Staates Delaware), Valley View | Laserabgehobene LED mit verbesserter Lichtausbeute |
| JP2007027278A (ja) * | 2005-07-13 | 2007-02-01 | Shinko Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
| JP2007067183A (ja) * | 2005-08-31 | 2007-03-15 | Showa Denko Kk | 化合物半導体発光素子を有するledパッケージ |
| JP4799974B2 (ja) * | 2005-09-16 | 2011-10-26 | 昭和電工株式会社 | 窒化物系半導体発光素子及びその製造方法 |
| JP4799975B2 (ja) * | 2005-09-16 | 2011-10-26 | 昭和電工株式会社 | 窒化物系半導体発光素子及びその製造方法 |
| DE102005046450A1 (de) * | 2005-09-28 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, Verfahren zu dessen Herstellung und optoelektronisches Bauteil |
| JP4476912B2 (ja) | 2005-09-29 | 2010-06-09 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JP2007123381A (ja) * | 2005-10-26 | 2007-05-17 | Toyota Central Res & Dev Lab Inc | 半導体発光素子 |
| KR20090009772A (ko) | 2005-12-22 | 2009-01-23 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 |
| KR100695118B1 (ko) * | 2005-12-27 | 2007-03-14 | 삼성코닝 주식회사 | 다중-프리스탠딩 GaN 웨이퍼의 제조방법 |
| JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
| JP4275718B2 (ja) | 2006-01-16 | 2009-06-10 | パナソニック株式会社 | 半導体発光装置 |
| JP2007220865A (ja) * | 2006-02-16 | 2007-08-30 | Sumitomo Chemical Co Ltd | 3族窒化物半導体発光素子およびその製造方法 |
| US7781791B2 (en) | 2006-02-28 | 2010-08-24 | Rohm Co., Ltd. | Semiconductor light emitting element |
| JP2007273562A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 半導体発光装置 |
| CN102437152A (zh) | 2006-04-24 | 2012-05-02 | 克利公司 | 侧视表面安装式白光led |
| US7521727B2 (en) * | 2006-04-26 | 2009-04-21 | Rohm And Haas Company | Light emitting device having improved light extraction efficiency and method of making same |
| US7955531B1 (en) | 2006-04-26 | 2011-06-07 | Rohm And Haas Electronic Materials Llc | Patterned light extraction sheet and method of making same |
| KR100736623B1 (ko) | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
| KR100735496B1 (ko) * | 2006-05-10 | 2007-07-04 | 삼성전기주식회사 | 수직구조 질화갈륨계 led 소자의 제조방법 |
| KR100735470B1 (ko) * | 2006-05-19 | 2007-07-03 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
| US8174025B2 (en) * | 2006-06-09 | 2012-05-08 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device including porous layer |
| US7800122B2 (en) * | 2006-09-07 | 2010-09-21 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Light emitting diode device, and manufacture and use thereof |
| JP2008066557A (ja) * | 2006-09-08 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
| DE102007004302A1 (de) | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| US7789531B2 (en) | 2006-10-02 | 2010-09-07 | Illumitex, Inc. | LED system and method |
| JP4984824B2 (ja) * | 2006-10-26 | 2012-07-25 | 豊田合成株式会社 | 発光装置 |
| JP2008108952A (ja) * | 2006-10-26 | 2008-05-08 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
| EP2087563B1 (en) | 2006-11-15 | 2014-09-24 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
| JP2010512662A (ja) | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 透明発光ダイオード |
| WO2008073435A1 (en) * | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Lead frame for transparent and mirrorless light emitting diode |
| JP2008166311A (ja) * | 2006-12-26 | 2008-07-17 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
| JP5334088B2 (ja) * | 2007-01-15 | 2013-11-06 | フューチャー ライト リミテッド ライアビリティ カンパニー | 半導体発光装置 |
| US7834367B2 (en) | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
| CA2680194A1 (en) * | 2007-03-08 | 2008-09-18 | Jason D. Colvin | Light emitting diode for harsh environments |
| JP2008300580A (ja) * | 2007-05-30 | 2008-12-11 | Nichia Corp | 発光素子及び発光装置 |
| JP4829190B2 (ja) * | 2007-08-22 | 2011-12-07 | 株式会社東芝 | 発光素子 |
| DE102007052181A1 (de) * | 2007-09-20 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102007046519A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung |
| US9012937B2 (en) | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
| US9634191B2 (en) * | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| CN101939849A (zh) | 2008-02-08 | 2011-01-05 | 伊鲁米特克有限公司 | 用于发射器层成形的系统和方法 |
| KR101469979B1 (ko) * | 2008-03-24 | 2014-12-05 | 엘지이노텍 주식회사 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
| KR101449030B1 (ko) * | 2008-04-05 | 2014-10-08 | 엘지이노텍 주식회사 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
| KR20090106299A (ko) | 2008-04-05 | 2009-10-08 | 송준오 | 오믹접촉 광추출 구조층을 구비한 그룹 3족 질화물계반도체 발광다이오드 소자 및 이의 제조 방법 |
| TW200950136A (en) * | 2008-05-26 | 2009-12-01 | wei-hong Luo | LED packaging structure |
| CN102124577A (zh) * | 2008-06-26 | 2011-07-13 | 3M创新有限公司 | 制造光提取器的方法 |
| US20110101402A1 (en) * | 2008-06-26 | 2011-05-05 | Jun-Ying Zhang | Semiconductor light converting construction |
| EP2312658B1 (en) * | 2008-07-03 | 2018-06-27 | Samsung Electronics Co., Ltd. | A wavelength-converting light emitting diode (led) chip and method for fabrication of an led device equipped with this chip |
| JP5426848B2 (ja) * | 2008-08-06 | 2014-02-26 | フューチャー ライト リミテッド ライアビリティ カンパニー | 半導体発光装置 |
| US8456082B2 (en) * | 2008-12-01 | 2013-06-04 | Ifire Ip Corporation | Surface-emission light source with uniform illumination |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| KR101047761B1 (ko) * | 2008-12-26 | 2011-07-07 | 엘지이노텍 주식회사 | 반도체 발광소자 |
| JP2009200522A (ja) * | 2009-05-15 | 2009-09-03 | Mitsubishi Chemicals Corp | GaN系半導体発光素子 |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| KR20120094477A (ko) | 2009-09-25 | 2012-08-24 | 크리, 인코포레이티드 | 낮은 눈부심 및 높은 광도 균일성을 갖는 조명 장치 |
| KR101034054B1 (ko) * | 2009-10-22 | 2011-05-12 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
| KR101028313B1 (ko) * | 2009-12-03 | 2011-04-11 | 엘지이노텍 주식회사 | 발광 장치 및 그 제조 방법 |
| JP5678629B2 (ja) * | 2010-02-09 | 2015-03-04 | ソニー株式会社 | 発光装置の製造方法 |
| CN101814562B (zh) * | 2010-04-21 | 2013-05-29 | 哈尔滨工业大学 | 一种成本低的具有二维光子晶体的发光二极管 |
| CN101826587B (zh) * | 2010-04-23 | 2012-10-17 | 山东大学 | 作为提高led出光效率微透镜的聚苯乙烯半球的制备方法 |
| US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
| US8723201B2 (en) * | 2010-08-20 | 2014-05-13 | Invenlux Corporation | Light-emitting devices with substrate coated with optically denser material |
| JP5487077B2 (ja) | 2010-10-29 | 2014-05-07 | シャープ株式会社 | 発光装置、車両用前照灯および照明装置 |
| JP2012119193A (ja) | 2010-12-01 | 2012-06-21 | Sharp Corp | 発光装置、車両用前照灯、照明装置、及び車両 |
| DE102011009369A1 (de) * | 2011-01-25 | 2012-07-26 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| KR20120100193A (ko) * | 2011-03-03 | 2012-09-12 | 서울옵토디바이스주식회사 | 발광 다이오드 칩 |
| JP5788194B2 (ja) * | 2011-03-03 | 2015-09-30 | シャープ株式会社 | 発光装置、照明装置、及び車両用前照灯 |
| JP5603813B2 (ja) * | 2011-03-15 | 2014-10-08 | 株式会社東芝 | 半導体発光装置及び発光装置 |
| US8343788B2 (en) * | 2011-04-19 | 2013-01-01 | Epistar Corporation | Light emitting device and manufacturing method thereof |
| CN102853378B (zh) | 2011-06-29 | 2015-09-02 | 夏普株式会社 | 投射装置、及具备该投射装置的车辆用前照灯 |
| JP5707618B2 (ja) | 2011-06-30 | 2015-04-30 | シャープ株式会社 | 発光装置 |
| KR101894025B1 (ko) * | 2011-12-16 | 2018-09-03 | 엘지이노텍 주식회사 | 발광소자 |
| JP2013197309A (ja) * | 2012-03-19 | 2013-09-30 | Toshiba Corp | 発光装置 |
| CN110246941A (zh) * | 2012-03-19 | 2019-09-17 | 亮锐控股有限公司 | 在硅衬底上生长的发光器件 |
| JP6005958B2 (ja) * | 2012-03-19 | 2016-10-12 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
| JP5661671B2 (ja) * | 2012-03-26 | 2015-01-28 | 株式会社東芝 | 半導体発光素子 |
| JP2013232503A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体発光装置 |
| JP5832956B2 (ja) * | 2012-05-25 | 2015-12-16 | 株式会社東芝 | 半導体発光装置 |
| KR101967837B1 (ko) * | 2013-03-11 | 2019-04-10 | 삼성전자주식회사 | 반도체 발광 소자 |
| DE102013103079A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| TWI511344B (zh) * | 2013-05-08 | 2015-12-01 | Ind Tech Res Inst | 光取出元件及發光裝置 |
| CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
| DE102013107531A1 (de) * | 2013-07-16 | 2015-01-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| JP2015061024A (ja) * | 2013-09-20 | 2015-03-30 | パナソニック株式会社 | 発光モジュール |
| JP6087853B2 (ja) * | 2014-02-24 | 2017-03-01 | シャープ株式会社 | 発光装置の製造方法 |
| JP6349973B2 (ja) * | 2014-05-30 | 2018-07-04 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| CN111599832B (zh) * | 2014-06-23 | 2023-03-24 | 晶元光电股份有限公司 | 光电元件及其制造方法 |
| CN106605307B (zh) * | 2014-09-02 | 2020-08-11 | 亮锐控股有限公司 | 光源 |
| JP6544962B2 (ja) * | 2015-03-27 | 2019-07-17 | 東レエンジニアリング株式会社 | Ledモジュールおよびledモジュールの製造方法 |
| CN105485573B (zh) * | 2015-12-31 | 2019-02-15 | 广东晶科电子股份有限公司 | 一种高色域直下式led背光模组 |
| JP2018060867A (ja) * | 2016-10-03 | 2018-04-12 | 株式会社ディスコ | 発光ダイオードチップの製造方法 |
| JP6729275B2 (ja) * | 2016-10-12 | 2020-07-22 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
| US10886437B2 (en) * | 2016-11-03 | 2021-01-05 | Lumileds Llc | Devices and structures bonded by inorganic coating |
| JP2018074111A (ja) * | 2016-11-04 | 2018-05-10 | 株式会社ディスコ | 発光ダイオードチップの製造方法 |
| JP2018078142A (ja) * | 2016-11-07 | 2018-05-17 | 株式会社ディスコ | 発光ダイオードチップの製造方法 |
| US10141290B2 (en) * | 2017-03-12 | 2018-11-27 | Mikro Mesa Technology Co., Ltd. | Display device and method for manufacturing the same |
| CN108573660B (zh) * | 2017-03-12 | 2021-04-09 | 美科米尚技术有限公司 | 显示装置 |
| US10026757B1 (en) | 2017-03-12 | 2018-07-17 | Mikro Mesa Technology Co., Ltd. | Micro-light emitting display device |
| WO2020244857A1 (en) * | 2019-06-05 | 2020-12-10 | Lumileds Holding B.V. | Bonding of phosphor converter emitters |
| EP3991209A1 (en) | 2019-06-25 | 2022-05-04 | Lumileds LLC | Phosphor layer for micro-led applications |
| US11177420B2 (en) | 2019-10-09 | 2021-11-16 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
| US11362243B2 (en) | 2019-10-09 | 2022-06-14 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
| EP3855515A1 (en) | 2020-01-23 | 2021-07-28 | Lumileds LLC | Manufacturing phosphor wavelength conversion layer |
| US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
| US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
| US11411146B2 (en) | 2020-10-08 | 2022-08-09 | Lumileds Llc | Protection layer for a light emitting diode |
| US12027651B2 (en) | 2021-01-06 | 2024-07-02 | Lumileds Llc | Lateral light collection and wavelength conversion for a light-emitting device |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5671986A (en) * | 1979-11-16 | 1981-06-15 | Semiconductor Res Found | Light emanating diode |
| JP2836686B2 (ja) | 1993-03-31 | 1998-12-14 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JP3525773B2 (ja) * | 1998-12-02 | 2004-05-10 | 日亜化学工業株式会社 | 窒化物半導体基板およびそれを用いた窒化物半導体素子 |
| JP3469484B2 (ja) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JP4097343B2 (ja) * | 1999-01-26 | 2008-06-11 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子の製造方法 |
| JP2001203393A (ja) | 2000-01-19 | 2001-07-27 | Matsushita Electric Works Ltd | 発光ダイオード |
| TW465123B (en) | 2000-02-02 | 2001-11-21 | Ind Tech Res Inst | High power white light LED |
| US6777871B2 (en) * | 2000-03-31 | 2004-08-17 | General Electric Company | Organic electroluminescent devices with enhanced light extraction |
| JP4151284B2 (ja) * | 2001-03-05 | 2008-09-17 | 日亜化学工業株式会社 | 窒化物半導体発光素子及び発光装置並びにそれらの製造方法 |
| JP2002319708A (ja) | 2001-04-23 | 2002-10-31 | Matsushita Electric Works Ltd | Ledチップおよびled装置 |
| TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
| JP4193471B2 (ja) * | 2001-12-14 | 2008-12-10 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| JP2003243727A (ja) * | 2001-12-14 | 2003-08-29 | Nichia Chem Ind Ltd | 発光装置 |
| US7515336B2 (en) * | 2001-12-21 | 2009-04-07 | Bose Corporation | Selective reflecting |
| US6943379B2 (en) * | 2002-04-04 | 2005-09-13 | Toyoda Gosei Co., Ltd. | Light emitting diode |
| JP2003347601A (ja) | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | 発光ダイオード照明装置 |
| US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
-
2004
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| US7388232B2 (en) | 2008-06-17 |
| JP2005191514A (ja) | 2005-07-14 |
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