JP5426848B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP5426848B2 JP5426848B2 JP2008202683A JP2008202683A JP5426848B2 JP 5426848 B2 JP5426848 B2 JP 5426848B2 JP 2008202683 A JP2008202683 A JP 2008202683A JP 2008202683 A JP2008202683 A JP 2008202683A JP 5426848 B2 JP5426848 B2 JP 5426848B2
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- light emitting
- light
- led chip
- pores
- semiconductor light
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- 239000004065 semiconductor Substances 0.000 title claims description 104
- 239000011148 porous material Substances 0.000 claims description 93
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000012528 membrane Substances 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 238000005253 cladding Methods 0.000 description 37
- 238000004519 manufacturing process Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 22
- 238000007789 sealing Methods 0.000 description 18
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000001771 vacuum deposition Methods 0.000 description 7
- 230000001788 irregular Effects 0.000 description 6
- 239000008151 electrolyte solution Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 244000126211 Hericium coralloides Species 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000008262 pumice Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Led Device Packages (AREA)
- Led Devices (AREA)
Description
図5および図6は、それぞれ、本発明の第1実施形態によるLEDチップの構造を示した断面図および平面図である。まず、図3、図5および図6を参照して、第1実施形態によるLEDチップ20の構造について説明する。なお、図5は、図6の100−100線における断面を部分的に示している。
図12および図13は、本発明の第1実施形態の変形例によるLEDチップの構造を示した平面図である。図12および図13を参照して、第1実施形態の変形例によるLEDチップ45では、p型クラッド層13上に、平面的な形状が上記第1実施形態と異なるp側パッド電極46を形成する場合について説明する。なお、p側パッド電極46は、本発明の「電極」の一例である。
図14および図15は、それぞれ、本発明の第2実施形態によるLEDチップの構造を示した断面図および平面図である。図14および図15を参照して、第2実施形態によるLEDチップ50では、上記第1実施形態と異なり、p型クラッド層13と絶縁膜17との間に、p側パッド電極51に接続される透明電極層52を形成する場合について説明する。なお、図15は、図14の200−200線における断面を示す。なお、p側パッド電極51は、本発明の「電極」の一例である。
図18および図19は、それぞれ、本発明の第3実施形態によるLEDランプの構造を示した断面図である。まず、図5、図18および図19を参照して、第3実施形態によるLEDランプ70の構造について説明する。なお、この第3実施形態では、半導体発光装置の一例であるLEDランプに本発明を適用した場合について説明する。
6 第2電極(電極)
7、17 絶縁膜
8、30a 多孔質膜
9、31 細孔
16、46、51 p側パッド電極(電極)
75 封止部(波長変換部)
76 蛍光体
Claims (6)
- 半導体発光素子層と、
前記半導体発光素子層の光の出射方向側の表面上に形成された多孔質膜とを備え、
前記多孔質膜は、膜の厚み方向に延びるように形成された複数の細孔を含み、前記細孔の底部近傍の前記多孔質膜の内部に、金属部分を部分的に有し、
前記金属部分は、前記半導体発光素子層から出射される光の波長より小さな大きさを有する、半導体発光装置。 - 前記複数の細孔は、平面的に見て、異なる間隔を隔てて不規則的に配置されている、請求項1に記載の半導体発光装置。
- 前記複数の細孔は、隣接する細孔と細孔の平均的な間隔が半導体発光素子層から出射される光の波長と同程度の大きさを有する、請求項2に記載の半導体発光装置。
- 前記半導体発光素子層の光の出射方向側の前記表面上に形成された電極をさらに備え、
前記多孔質膜は、少なくとも一部が前記電極の表面上に重なるように配置される、請求項1〜3のいずれか1項に記載の半導体発光装置。 - 前記電極上に形成された絶縁膜をさらに備え、
前記多孔質膜は、前記絶縁膜を介して前記電極の表面上に形成されている、請求項1〜4のいずれか1項に記載の半導体発光装置。 - 光の波長を変換する蛍光体を含む波長変換部をさらに備え、
前記波長変換部は、前記多孔質膜の前記細孔内に充填されている、請求項1〜5のいずれか1項に記載の半導体発光装置。
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JP2008202683A JP5426848B2 (ja) | 2008-08-06 | 2008-08-06 | 半導体発光装置 |
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JP2008202683A JP5426848B2 (ja) | 2008-08-06 | 2008-08-06 | 半導体発光装置 |
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JP2010040810A JP2010040810A (ja) | 2010-02-18 |
JP5426848B2 true JP5426848B2 (ja) | 2014-02-26 |
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EP3803509A1 (en) * | 2018-05-24 | 2021-04-14 | Materion Corporation | White light phosphor device |
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JP4193471B2 (ja) * | 2001-12-14 | 2008-12-10 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
JP4590905B2 (ja) * | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
JP4631047B2 (ja) * | 2004-01-05 | 2011-02-16 | 国立大学法人広島大学 | 陽極酸化アルミナ膜を具備する構造体およびその製造方法並びにその利用 |
TWI299917B (en) * | 2006-03-17 | 2008-08-11 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
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