JP6544962B2 - Ledモジュールおよびledモジュールの製造方法 - Google Patents
Ledモジュールおよびledモジュールの製造方法 Download PDFInfo
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- JP6544962B2 JP6544962B2 JP2015066031A JP2015066031A JP6544962B2 JP 6544962 B2 JP6544962 B2 JP 6544962B2 JP 2015066031 A JP2015066031 A JP 2015066031A JP 2015066031 A JP2015066031 A JP 2015066031A JP 6544962 B2 JP6544962 B2 JP 6544962B2
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- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000007789 sealing Methods 0.000 claims description 76
- 229920005989 resin Polymers 0.000 claims description 69
- 239000011347 resin Substances 0.000 claims description 69
- 239000010409 thin film Substances 0.000 claims description 55
- 239000010408 film Substances 0.000 claims description 43
- 239000000126 substance Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000037303 wrinkles Effects 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000605 extraction Methods 0.000 description 10
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229920002050 silicone resin Polymers 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000025 natural resin Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
当該封止樹脂の表面が薄膜で覆われており、
前記薄膜は前記封止樹脂よりも線膨張係数が小さい材質からなり、表面から裏面までの全体がしわ寄っていることで表面に凹凸面を備えて前記LEDチップからの光が多重反射するように構成したことを特徴とするLEDモジュールを提供するものである。
図1を用いて、本発明の実施例1におけるLEDモジュールの構成を説明する。図1はLEDモジュールの断面を示している。パッケージ基板1の電極5上にLEDチップ2が搭載され、そのLEDチップ2の電極とパッケージ基板の電極5とがワイヤー6で電気的に接続されている。また、LEDチップ2の周囲には、セラミック等からなるリフレクター4が配置されてLEDチップ2が発光した光の一部が反射して大気に向かうことにより、より多くの光がLEDモジュールから放出されるようにされている。
次に、本発明のLEDモジュールの製造方法について説明する。図1のようにリフレクター4を備えたパッケージ基板1の電極5上にLEDチップ2が搭載され、LEDチップの電極と基板の電極とがワイヤー6で電気的に接続されたモジュールの空間に封止樹脂3が充填されたLEDモジュールに対して、プラズマCVD装置により封止樹脂3の表面に薄膜7を成膜する。
本発明の実施例2におけるLEDモジュールは、薄膜7が積層構造となっている点で実施例1と異なっている。すなわち、封止樹脂3の表面に無機物からなる絶縁膜であるバッファ層が形成され、さらにその表面に無機物からなる酸化膜が形成されている。つまり無機物からなる酸化膜と封止樹脂3との間に無機物からなる絶縁膜であるバッファ層が積層されている。
リフレクター4を備えたパッケージ基板1の電極5上にLEDチップ2が搭載され、LEDチップの電極と基板の電極5とがワイヤー6で電気的に接続されたモジュールの空間に封止樹脂3が充填されたLEDモジュールに対して、プラズマCVD装置により、まず封止樹脂3の表面に無機物からなる絶縁層であるバッファ層を成膜する。バッファ層は、SiCNとすることができる。このバッファ層を形成することにより、シリコーン樹脂からなる封止樹脂3との密着性を向上させることができる。
2 LEDチップ
3 封止樹脂
4 リフレクター
5 電極
6 ワイヤー
7 薄膜
A 大気に放出される光
B 内部反射
Claims (5)
- LEDチップが封止樹脂で封止されたLEDモジュールであって、
当該封止樹脂の表面が薄膜で覆われており、
前記薄膜は前記封止樹脂よりも線膨張係数が小さい材質からなり、表面から裏面までの全体がしわ寄っていることで表面に凹凸面を備えて前記LEDチップからの光が多重反射するように構成したことを特徴とするLEDモジュール。 - 前記薄膜は、加熱条件下で前記封止樹脂表面に成膜した後、室温に戻すことにより前記薄膜の表面に凹凸が形成された構成であることを特徴とする請求項1に記載のLEDモジュール。
- 前記薄膜は、無機物からなる酸化膜を含む構成であることを特徴とする請求項1又は2に記載のLEDモジュール。
- 前記薄膜は、前記酸化膜と前記封止樹脂との間に無機物からなるバッファ膜を積層した構成であることを特徴とする請求項3に記載のLEDモジュール。
- パッケージ基板に搭載されたLEDチップを封止樹脂で封止する封止工程と、該封止工程の後に、加熱条件下で前記封止樹脂の表面に薄膜を成膜する成膜工程とを有し、該成膜工程の後に前記LEDモジュールを室温に戻すことにより前記薄膜の表面に凹凸を形成して、前記LEDチップからの光が多重反射するようにしたことを特徴とするLEDモジュールの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015066031A JP6544962B2 (ja) | 2015-03-27 | 2015-03-27 | Ledモジュールおよびledモジュールの製造方法 |
PCT/JP2016/059128 WO2016158601A1 (ja) | 2015-03-27 | 2016-03-23 | Ledモジュールおよびledモジュールの製造方法 |
CN201680015963.6A CN107408612B (zh) | 2015-03-27 | 2016-03-23 | Led模块和led模块的制造方法 |
US15/562,024 US10333038B2 (en) | 2015-03-27 | 2016-03-23 | LED module and method for manufacturing LED module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015066031A JP6544962B2 (ja) | 2015-03-27 | 2015-03-27 | Ledモジュールおよびledモジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016186974A JP2016186974A (ja) | 2016-10-27 |
JP6544962B2 true JP6544962B2 (ja) | 2019-07-17 |
Family
ID=57005054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015066031A Active JP6544962B2 (ja) | 2015-03-27 | 2015-03-27 | Ledモジュールおよびledモジュールの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10333038B2 (ja) |
JP (1) | JP6544962B2 (ja) |
CN (1) | CN107408612B (ja) |
WO (1) | WO2016158601A1 (ja) |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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US6728601B2 (en) * | 2001-07-19 | 2004-04-27 | International Business Machines Corporation | Multiple host power control system and method |
JP2003234509A (ja) | 2002-02-08 | 2003-08-22 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2003298115A (ja) * | 2002-04-05 | 2003-10-17 | Citizen Electronics Co Ltd | 発光ダイオード |
JP4590905B2 (ja) * | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
US20050126697A1 (en) * | 2003-12-11 | 2005-06-16 | International Business Machines Corporation | Photochemically and thermally curable adhesive formulations |
TW200614548A (en) * | 2004-07-09 | 2006-05-01 | Matsushita Electric Ind Co Ltd | Light-emitting device |
KR101158955B1 (ko) * | 2005-01-24 | 2012-06-21 | 모멘티브 파포만스 마테리아루즈 쟈판 고도가이샤 | 발광 소자 밀봉용 실리콘 조성물과 발광 장치 |
US20060189013A1 (en) * | 2005-02-24 | 2006-08-24 | 3M Innovative Properties Company | Method of making LED encapsulant with undulating surface |
US7720654B2 (en) * | 2005-10-15 | 2010-05-18 | Micron Technology, Inc. | Generation and manipulation of realistic signals for circuit and system verification |
US20100155749A1 (en) * | 2007-03-19 | 2010-06-24 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
JP2009070892A (ja) * | 2007-09-11 | 2009-04-02 | Citizen Holdings Co Ltd | Led光源 |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
JP2009229507A (ja) * | 2008-03-19 | 2009-10-08 | Hitachi Chem Co Ltd | 封止フィルム |
US20100209670A1 (en) | 2009-02-17 | 2010-08-19 | Nitto Denko Corporation | Sheet for photosemiconductor encapsulation |
JP5177693B2 (ja) * | 2009-05-20 | 2013-04-03 | 日東電工株式会社 | 光半導体封止用シート |
JP2011018704A (ja) * | 2009-07-07 | 2011-01-27 | Toyoda Gosei Co Ltd | Ledチップを囲繞する封止部材の表面に微細凹凸を形成する方法、及びこの方法を含むledランプの製造方法 |
JP5278300B2 (ja) * | 2009-12-19 | 2013-09-04 | 豊田合成株式会社 | Led発光装置の製造方法 |
TWI580071B (zh) * | 2010-09-30 | 2017-04-21 | 三菱麗陽股份有限公司 | 表面具有細微凹凸結構的模具、表面具有細微凹凸結構的物品的製造方法、物品的用途、可顯影虹彩色的層疊體以及面發光體 |
US10420361B2 (en) * | 2010-12-07 | 2019-09-24 | O2C Galactic, Llc | Citrus press drinking vessel |
KR101871538B1 (ko) * | 2011-04-27 | 2018-06-26 | 제이엑스티지 에네루기 가부시키가이샤 | 유기 el 소자용의 광 취출 투명 기판 및 그것을 사용한 유기 el 소자 |
JP6054701B2 (ja) * | 2012-10-18 | 2016-12-27 | シチズン電子株式会社 | 発光装置 |
JP2014135322A (ja) * | 2013-01-08 | 2014-07-24 | Sharp Corp | 発光装置及び照明器具 |
JP2014160742A (ja) * | 2013-02-19 | 2014-09-04 | Sharp Corp | 発光装置 |
JP2015002298A (ja) * | 2013-06-17 | 2015-01-05 | ヘンケルジャパン株式会社 | 発光装置、その製造のための封止フィルム積層体、および発光装置の製造方法 |
JP6060857B2 (ja) * | 2013-08-26 | 2017-01-18 | 豊田合成株式会社 | Ledランプの製造方法及び封止樹脂に対する凹凸付与装置 |
-
2015
- 2015-03-27 JP JP2015066031A patent/JP6544962B2/ja active Active
-
2016
- 2016-03-23 US US15/562,024 patent/US10333038B2/en not_active Expired - Fee Related
- 2016-03-23 CN CN201680015963.6A patent/CN107408612B/zh not_active Expired - Fee Related
- 2016-03-23 WO PCT/JP2016/059128 patent/WO2016158601A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20180108821A1 (en) | 2018-04-19 |
US10333038B2 (en) | 2019-06-25 |
JP2016186974A (ja) | 2016-10-27 |
WO2016158601A1 (ja) | 2016-10-06 |
CN107408612A (zh) | 2017-11-28 |
CN107408612B (zh) | 2019-12-24 |
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