JP2016186974A - Ledモジュールおよびledモジュールの製造方法 - Google Patents
Ledモジュールおよびledモジュールの製造方法 Download PDFInfo
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- JP2016186974A JP2016186974A JP2015066031A JP2015066031A JP2016186974A JP 2016186974 A JP2016186974 A JP 2016186974A JP 2015066031 A JP2015066031 A JP 2015066031A JP 2015066031 A JP2015066031 A JP 2015066031A JP 2016186974 A JP2016186974 A JP 2016186974A
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- Prior art keywords
- thin film
- sealing resin
- led module
- led chip
- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
Description
図1を用いて、本発明の実施例1におけるLEDモジュールの構成を説明する。図1はLEDモジュールの断面を示している。パッケージ基板1の電極5上にLEDチップ2が搭載され、そのLEDチップ2の電極とパッケージ基板の電極5とがワイヤー6で電気的に接続されている。また、LEDチップ2の周囲には、セラミック等からなるリフレクター4が配置されてLEDチップ2が発光した光の一部が反射して大気に向かうことにより、より多くの光がLEDモジュールから放出されるようにされている。
次に、本発明のLEDモジュールの製造方法について説明する。図1のようにリフレクター4を備えたパッケージ基板1の電極5上にLEDチップ2が搭載され、LEDチップの電極と基板の電極とがワイヤー6で電気的に接続されたモジュールの空間に封止樹脂3が充填されたLEDモジュールに対して、プラズマCVD装置により封止樹脂3の表面に薄膜7を成膜する。
本発明の実施例2におけるLEDモジュールは、薄膜7が積層構造となっている点で実施例1と異なっている。すなわち、封止樹脂3の表面に無機物からなる絶縁膜であるバッファ層が形成され、さらにその表面に無機物からなる酸化膜が形成されている。つまり無機物からなる酸化膜と封止樹脂3との間に無機物からなる絶縁膜であるバッファ層が積層されている。
リフレクター4を備えたパッケージ基板1の電極5上にLEDチップ2が搭載され、LEDチップの電極と基板の電極5とがワイヤー6で電気的に接続されたモジュールの空間に封止樹脂3が充填されたLEDモジュールに対して、プラズマCVD装置により、まず封止樹脂3の表面に無機物からなる絶縁層であるバッファ層を成膜する。バッファ層は、SiCNとすることができる。このバッファ層を形成することにより、シリコーン樹脂からなる封止樹脂3との密着性を向上させることができる。
2 LEDチップ
3 封止樹脂
4 リフレクター
5 電極
6 ワイヤー
7 薄膜
A 大気に放出される光
B 内部反射
Claims (5)
- LEDチップが封止樹脂で封止されたLEDモジュールであって、当該封止樹脂の表面が薄膜で覆われており、前記薄膜は前記封止樹脂よりも線膨張係数が小さい材質からなり、前記薄膜の表面には凹凸面を備えることによって前記LEDチップからの光が多重反射するように構成したことを特徴とするLEDモジュール。
- 前記薄膜は、加熱条件下で前記封止樹脂表面に成膜した後、室温に戻すことにより前記薄膜の表面に凹凸が形成された構成であることを特徴とする請求項1に記載のLEDモジュール。
- 前記薄膜は、無機物からなる酸化膜を含む構成であることを特徴とする請求項1又は2に記載のLEDモジュール。
- 前記薄膜は、前記酸化膜と前記封止樹脂との間に無機物からなるバッファ膜を積層した構成であることを特徴とする請求項3に記載のLEDモジュール。
- パッケージ基板に搭載されたLEDチップを封止樹脂で封止する封止工程と、該封止工程の後に、加熱条件下で前記封止樹脂の表面に薄膜を成膜する成膜工程とを有し、該成膜工程の後に前記LEDモジュールを室温に戻すことにより前記薄膜の表面に凹凸を形成して、前記LEDチップからの光が多重反射するようにしたことを特徴とするLEDモジュールの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015066031A JP6544962B2 (ja) | 2015-03-27 | 2015-03-27 | Ledモジュールおよびledモジュールの製造方法 |
US15/562,024 US10333038B2 (en) | 2015-03-27 | 2016-03-23 | LED module and method for manufacturing LED module |
CN201680015963.6A CN107408612B (zh) | 2015-03-27 | 2016-03-23 | Led模块和led模块的制造方法 |
PCT/JP2016/059128 WO2016158601A1 (ja) | 2015-03-27 | 2016-03-23 | Ledモジュールおよびledモジュールの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015066031A JP6544962B2 (ja) | 2015-03-27 | 2015-03-27 | Ledモジュールおよびledモジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016186974A true JP2016186974A (ja) | 2016-10-27 |
JP6544962B2 JP6544962B2 (ja) | 2019-07-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015066031A Active JP6544962B2 (ja) | 2015-03-27 | 2015-03-27 | Ledモジュールおよびledモジュールの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10333038B2 (ja) |
JP (1) | JP6544962B2 (ja) |
CN (1) | CN107408612B (ja) |
WO (1) | WO2016158601A1 (ja) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234509A (ja) * | 2002-02-08 | 2003-08-22 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2005191514A (ja) * | 2003-10-31 | 2005-07-14 | Toyoda Gosei Co Ltd | 発光素子および発光装置 |
US20060189013A1 (en) * | 2005-02-24 | 2006-08-24 | 3M Innovative Properties Company | Method of making LED encapsulant with undulating surface |
JP2009070892A (ja) * | 2007-09-11 | 2009-04-02 | Citizen Holdings Co Ltd | Led光源 |
JP2009229507A (ja) * | 2008-03-19 | 2009-10-08 | Hitachi Chem Co Ltd | 封止フィルム |
JP2011018704A (ja) * | 2009-07-07 | 2011-01-27 | Toyoda Gosei Co Ltd | Ledチップを囲繞する封止部材の表面に微細凹凸を形成する方法、及びこの方法を含むledランプの製造方法 |
JP2011129790A (ja) * | 2009-12-19 | 2011-06-30 | Toyoda Gosei Co Ltd | Led発光装置の製造方法 |
JP2014082404A (ja) * | 2012-10-18 | 2014-05-08 | Citizen Electronics Co Ltd | 発光装置 |
JP2014135322A (ja) * | 2013-01-08 | 2014-07-24 | Sharp Corp | 発光装置及び照明器具 |
JP2014160742A (ja) * | 2013-02-19 | 2014-09-04 | Sharp Corp | 発光装置 |
JP2015002298A (ja) * | 2013-06-17 | 2015-01-05 | ヘンケルジャパン株式会社 | 発光装置、その製造のための封止フィルム積層体、および発光装置の製造方法 |
JP2015043363A (ja) * | 2013-08-26 | 2015-03-05 | 豊田合成株式会社 | Ledランプの製造方法及び封止樹脂に対する凹凸付与装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6728601B2 (en) * | 2001-07-19 | 2004-04-27 | International Business Machines Corporation | Multiple host power control system and method |
JP2003298115A (ja) * | 2002-04-05 | 2003-10-17 | Citizen Electronics Co Ltd | 発光ダイオード |
US20050126697A1 (en) * | 2003-12-11 | 2005-06-16 | International Business Machines Corporation | Photochemically and thermally curable adhesive formulations |
TW200614548A (en) * | 2004-07-09 | 2006-05-01 | Matsushita Electric Ind Co Ltd | Light-emitting device |
JP5705396B2 (ja) * | 2005-01-24 | 2015-04-22 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 発光素子封止用シリコーン組成物及び発光装置 |
US7720654B2 (en) * | 2005-10-15 | 2010-05-18 | Micron Technology, Inc. | Generation and manipulation of realistic signals for circuit and system verification |
US20100155749A1 (en) * | 2007-03-19 | 2010-06-24 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US20100209670A1 (en) | 2009-02-17 | 2010-08-19 | Nitto Denko Corporation | Sheet for photosemiconductor encapsulation |
JP5177693B2 (ja) | 2009-05-20 | 2013-04-03 | 日東電工株式会社 | 光半導体封止用シート |
KR20130114642A (ko) * | 2010-09-30 | 2013-10-17 | 미쯔비시 레이온 가부시끼가이샤 | 미세 요철 구조를 표면에 갖는 몰드, 미세 요철 구조를 표면에 갖는 물품의 제조 방법, 물품의 용도, 홍채색을 발현하는 적층체 및 면발광체 |
US10420361B2 (en) * | 2010-12-07 | 2019-09-24 | O2C Galactic, Llc | Citrus press drinking vessel |
CA2834426A1 (en) * | 2011-04-27 | 2012-11-01 | Jx Nippon Oil & Energy Corporation | Light extraction transparent substrate for organic el element, and organic el element using the same |
-
2015
- 2015-03-27 JP JP2015066031A patent/JP6544962B2/ja active Active
-
2016
- 2016-03-23 US US15/562,024 patent/US10333038B2/en not_active Expired - Fee Related
- 2016-03-23 WO PCT/JP2016/059128 patent/WO2016158601A1/ja active Application Filing
- 2016-03-23 CN CN201680015963.6A patent/CN107408612B/zh not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234509A (ja) * | 2002-02-08 | 2003-08-22 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2005191514A (ja) * | 2003-10-31 | 2005-07-14 | Toyoda Gosei Co Ltd | 発光素子および発光装置 |
US20060189013A1 (en) * | 2005-02-24 | 2006-08-24 | 3M Innovative Properties Company | Method of making LED encapsulant with undulating surface |
JP2009070892A (ja) * | 2007-09-11 | 2009-04-02 | Citizen Holdings Co Ltd | Led光源 |
JP2009229507A (ja) * | 2008-03-19 | 2009-10-08 | Hitachi Chem Co Ltd | 封止フィルム |
JP2011018704A (ja) * | 2009-07-07 | 2011-01-27 | Toyoda Gosei Co Ltd | Ledチップを囲繞する封止部材の表面に微細凹凸を形成する方法、及びこの方法を含むledランプの製造方法 |
JP2011129790A (ja) * | 2009-12-19 | 2011-06-30 | Toyoda Gosei Co Ltd | Led発光装置の製造方法 |
JP2014082404A (ja) * | 2012-10-18 | 2014-05-08 | Citizen Electronics Co Ltd | 発光装置 |
JP2014135322A (ja) * | 2013-01-08 | 2014-07-24 | Sharp Corp | 発光装置及び照明器具 |
JP2014160742A (ja) * | 2013-02-19 | 2014-09-04 | Sharp Corp | 発光装置 |
JP2015002298A (ja) * | 2013-06-17 | 2015-01-05 | ヘンケルジャパン株式会社 | 発光装置、その製造のための封止フィルム積層体、および発光装置の製造方法 |
JP2015043363A (ja) * | 2013-08-26 | 2015-03-05 | 豊田合成株式会社 | Ledランプの製造方法及び封止樹脂に対する凹凸付与装置 |
Also Published As
Publication number | Publication date |
---|---|
CN107408612A (zh) | 2017-11-28 |
JP6544962B2 (ja) | 2019-07-17 |
CN107408612B (zh) | 2019-12-24 |
WO2016158601A1 (ja) | 2016-10-06 |
US20180108821A1 (en) | 2018-04-19 |
US10333038B2 (en) | 2019-06-25 |
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