JP4590905B2 - 発光素子および発光装置 - Google Patents
発光素子および発光装置 Download PDFInfo
- Publication number
- JP4590905B2 JP4590905B2 JP2004109431A JP2004109431A JP4590905B2 JP 4590905 B2 JP4590905 B2 JP 4590905B2 JP 2004109431 A JP2004109431 A JP 2004109431A JP 2004109431 A JP2004109431 A JP 2004109431A JP 4590905 B2 JP4590905 B2 JP 4590905B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- light emitting
- led element
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004109431A JP4590905B2 (ja) | 2003-10-31 | 2004-04-01 | 発光素子および発光装置 |
| US10/974,945 US7388232B2 (en) | 2003-10-31 | 2004-10-28 | Light emitting element and light emitting device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003373273 | 2003-10-31 | ||
| JP2003401120 | 2003-12-01 | ||
| JP2004109431A JP4590905B2 (ja) | 2003-10-31 | 2004-04-01 | 発光素子および発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005191514A JP2005191514A (ja) | 2005-07-14 |
| JP2005191514A5 JP2005191514A5 (enExample) | 2006-11-02 |
| JP4590905B2 true JP4590905B2 (ja) | 2010-12-01 |
Family
ID=34799298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004109431A Expired - Fee Related JP4590905B2 (ja) | 2003-10-31 | 2004-04-01 | 発光素子および発光装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7388232B2 (enExample) |
| JP (1) | JP4590905B2 (enExample) |
Families Citing this family (124)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1620903B1 (en) | 2003-04-30 | 2017-08-16 | Cree, Inc. | High-power solid state light emitter package |
| US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
| DE102004001312B4 (de) * | 2003-07-25 | 2010-09-30 | Seoul Semiconductor Co., Ltd. | Chip-Leuchtdiode und Verfahren zu ihrer Herstellung |
| US6972438B2 (en) * | 2003-09-30 | 2005-12-06 | Cree, Inc. | Light emitting diode with porous SiC substrate and method for fabricating |
| JP2005191219A (ja) * | 2003-12-25 | 2005-07-14 | Sanken Electric Co Ltd | 半導体発光素子およびその製造方法 |
| US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| KR100638666B1 (ko) * | 2005-01-03 | 2006-10-30 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
| US20110284866A1 (en) * | 2005-01-11 | 2011-11-24 | Tran Chuong A | Light-emitting diode (led) structure having a wavelength-converting layer and method of producing |
| US7413918B2 (en) * | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
| US8680534B2 (en) | 2005-01-11 | 2014-03-25 | Semileds Corporation | Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light |
| JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
| KR100638819B1 (ko) * | 2005-05-19 | 2006-10-27 | 삼성전기주식회사 | 광추출효율이 개선된 수직구조 질화물 반도체 발광소자 |
| DE102005026206A1 (de) * | 2005-06-07 | 2006-12-14 | Siemens Ag | Lichterzeugende Anordnung |
| US20100181584A1 (en) * | 2005-07-11 | 2010-07-22 | Xiang Gao | Laser lift-off with improved light extraction |
| JP2007027278A (ja) * | 2005-07-13 | 2007-02-01 | Shinko Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
| JP2007067183A (ja) * | 2005-08-31 | 2007-03-15 | Showa Denko Kk | 化合物半導体発光素子を有するledパッケージ |
| JP4799974B2 (ja) * | 2005-09-16 | 2011-10-26 | 昭和電工株式会社 | 窒化物系半導体発光素子及びその製造方法 |
| JP4799975B2 (ja) * | 2005-09-16 | 2011-10-26 | 昭和電工株式会社 | 窒化物系半導体発光素子及びその製造方法 |
| DE102005046450A1 (de) * | 2005-09-28 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, Verfahren zu dessen Herstellung und optoelektronisches Bauteil |
| JP4476912B2 (ja) | 2005-09-29 | 2010-06-09 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JP2007123381A (ja) * | 2005-10-26 | 2007-05-17 | Toyota Central Res & Dev Lab Inc | 半導体発光素子 |
| EP1969633B1 (en) | 2005-12-22 | 2018-08-29 | Cree, Inc. | Lighting device |
| KR100695118B1 (ko) * | 2005-12-27 | 2007-03-14 | 삼성코닝 주식회사 | 다중-프리스탠딩 GaN 웨이퍼의 제조방법 |
| US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
| JP4275718B2 (ja) | 2006-01-16 | 2009-06-10 | パナソニック株式会社 | 半導体発光装置 |
| JP2007220865A (ja) * | 2006-02-16 | 2007-08-30 | Sumitomo Chemical Co Ltd | 3族窒化物半導体発光素子およびその製造方法 |
| US7781791B2 (en) | 2006-02-28 | 2010-08-24 | Rohm Co., Ltd. | Semiconductor light emitting element |
| JP2007273562A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 半導体発光装置 |
| CN102437152A (zh) | 2006-04-24 | 2012-05-02 | 克利公司 | 侧视表面安装式白光led |
| US7955531B1 (en) | 2006-04-26 | 2011-06-07 | Rohm And Haas Electronic Materials Llc | Patterned light extraction sheet and method of making same |
| US7521727B2 (en) * | 2006-04-26 | 2009-04-21 | Rohm And Haas Company | Light emitting device having improved light extraction efficiency and method of making same |
| KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
| KR100735496B1 (ko) * | 2006-05-10 | 2007-07-04 | 삼성전기주식회사 | 수직구조 질화갈륨계 led 소자의 제조방법 |
| KR100735470B1 (ko) * | 2006-05-19 | 2007-07-03 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
| US8174025B2 (en) * | 2006-06-09 | 2012-05-08 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device including porous layer |
| US7800122B2 (en) * | 2006-09-07 | 2010-09-21 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Light emitting diode device, and manufacture and use thereof |
| JP2008066557A (ja) * | 2006-09-08 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
| DE102007004302A1 (de) | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
| JP4984824B2 (ja) * | 2006-10-26 | 2012-07-25 | 豊田合成株式会社 | 発光装置 |
| JP2008108952A (ja) * | 2006-10-26 | 2008-05-08 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
| EP2843716A3 (en) | 2006-11-15 | 2015-04-29 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
| WO2008073435A1 (en) * | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Lead frame for transparent and mirrorless light emitting diode |
| TW201448263A (zh) * | 2006-12-11 | 2014-12-16 | 美國加利福尼亞大學董事會 | 透明發光二極體 |
| JP2008166311A (ja) * | 2006-12-26 | 2008-07-17 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
| JP5334088B2 (ja) * | 2007-01-15 | 2013-11-06 | フューチャー ライト リミテッド ライアビリティ カンパニー | 半導体発光装置 |
| US7834367B2 (en) | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
| CN101657911B (zh) | 2007-03-08 | 2011-11-16 | 医药及科学传感器公司 | 用于恶劣环境的发光二极管 |
| JP2008300580A (ja) * | 2007-05-30 | 2008-12-11 | Nichia Corp | 発光素子及び発光装置 |
| JP4829190B2 (ja) * | 2007-08-22 | 2011-12-07 | 株式会社東芝 | 発光素子 |
| DE102007052181A1 (de) * | 2007-09-20 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102007046519A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung |
| US9012937B2 (en) | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
| US9634191B2 (en) | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| KR20100122485A (ko) | 2008-02-08 | 2010-11-22 | 일루미텍스, 인크. | 발광체층 쉐이핑을 위한 시스템 및 방법 |
| KR101469979B1 (ko) * | 2008-03-24 | 2014-12-05 | 엘지이노텍 주식회사 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
| KR101449030B1 (ko) | 2008-04-05 | 2014-10-08 | 엘지이노텍 주식회사 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
| KR20090106299A (ko) | 2008-04-05 | 2009-10-08 | 송준오 | 오믹접촉 광추출 구조층을 구비한 그룹 3족 질화물계반도체 발광다이오드 소자 및 이의 제조 방법 |
| TW200950136A (en) * | 2008-05-26 | 2009-12-01 | wei-hong Luo | LED packaging structure |
| US8324000B2 (en) * | 2008-06-26 | 2012-12-04 | 3M Innovative Properties Company | Method of fabricating light extractor |
| US20110101402A1 (en) * | 2008-06-26 | 2011-05-05 | Jun-Ying Zhang | Semiconductor light converting construction |
| WO2010002221A2 (ko) | 2008-07-03 | 2010-01-07 | 삼성엘이디 주식회사 | 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치 |
| JP5426848B2 (ja) * | 2008-08-06 | 2014-02-26 | フューチャー ライト リミテッド ライアビリティ カンパニー | 半導体発光装置 |
| US8456082B2 (en) * | 2008-12-01 | 2013-06-04 | Ifire Ip Corporation | Surface-emission light source with uniform illumination |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| KR101047761B1 (ko) * | 2008-12-26 | 2011-07-07 | 엘지이노텍 주식회사 | 반도체 발광소자 |
| JP2009200522A (ja) * | 2009-05-15 | 2009-09-03 | Mitsubishi Chemicals Corp | GaN系半導体発光素子 |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| WO2011037877A1 (en) | 2009-09-25 | 2011-03-31 | Cree, Inc. | Lighting device with low glare and high light level uniformity |
| KR101034054B1 (ko) * | 2009-10-22 | 2011-05-12 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
| KR101028313B1 (ko) * | 2009-12-03 | 2011-04-11 | 엘지이노텍 주식회사 | 발광 장치 및 그 제조 방법 |
| JP5678629B2 (ja) * | 2010-02-09 | 2015-03-04 | ソニー株式会社 | 発光装置の製造方法 |
| CN101814562B (zh) * | 2010-04-21 | 2013-05-29 | 哈尔滨工业大学 | 一种成本低的具有二维光子晶体的发光二极管 |
| CN101826587B (zh) * | 2010-04-23 | 2012-10-17 | 山东大学 | 作为提高led出光效率微透镜的聚苯乙烯半球的制备方法 |
| US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
| US8723201B2 (en) * | 2010-08-20 | 2014-05-13 | Invenlux Corporation | Light-emitting devices with substrate coated with optically denser material |
| JP5487077B2 (ja) | 2010-10-29 | 2014-05-07 | シャープ株式会社 | 発光装置、車両用前照灯および照明装置 |
| JP2012119193A (ja) | 2010-12-01 | 2012-06-21 | Sharp Corp | 発光装置、車両用前照灯、照明装置、及び車両 |
| DE102011009369A1 (de) * | 2011-01-25 | 2012-07-26 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| JP5788194B2 (ja) * | 2011-03-03 | 2015-09-30 | シャープ株式会社 | 発光装置、照明装置、及び車両用前照灯 |
| KR20120100193A (ko) * | 2011-03-03 | 2012-09-12 | 서울옵토디바이스주식회사 | 발광 다이오드 칩 |
| JP5603813B2 (ja) * | 2011-03-15 | 2014-10-08 | 株式会社東芝 | 半導体発光装置及び発光装置 |
| US8343788B2 (en) * | 2011-04-19 | 2013-01-01 | Epistar Corporation | Light emitting device and manufacturing method thereof |
| US9108568B2 (en) | 2011-06-29 | 2015-08-18 | Sharp Kabushiki Kaisha | Light-projecting device, and vehicle headlamp including light-projecting device |
| JP5707618B2 (ja) | 2011-06-30 | 2015-04-30 | シャープ株式会社 | 発光装置 |
| KR101894025B1 (ko) * | 2011-12-16 | 2018-09-03 | 엘지이노텍 주식회사 | 발광소자 |
| JP6005958B2 (ja) * | 2012-03-19 | 2016-10-12 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
| KR102116152B1 (ko) * | 2012-03-19 | 2020-05-28 | 루미리즈 홀딩 비.브이. | 실리콘 기판 상에서 성장하는 발광 장치 |
| JP2013197309A (ja) * | 2012-03-19 | 2013-09-30 | Toshiba Corp | 発光装置 |
| JP5661671B2 (ja) * | 2012-03-26 | 2015-01-28 | 株式会社東芝 | 半導体発光素子 |
| JP2013232503A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体発光装置 |
| JP5832956B2 (ja) | 2012-05-25 | 2015-12-16 | 株式会社東芝 | 半導体発光装置 |
| KR101967837B1 (ko) * | 2013-03-11 | 2019-04-10 | 삼성전자주식회사 | 반도체 발광 소자 |
| DE102013103079A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| TWI511344B (zh) * | 2013-05-08 | 2015-12-01 | Ind Tech Res Inst | 光取出元件及發光裝置 |
| CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
| DE102013107531A1 (de) * | 2013-07-16 | 2015-01-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| JP2015061024A (ja) * | 2013-09-20 | 2015-03-30 | パナソニック株式会社 | 発光モジュール |
| JP6087853B2 (ja) * | 2014-02-24 | 2017-03-01 | シャープ株式会社 | 発光装置の製造方法 |
| JP6349973B2 (ja) * | 2014-05-30 | 2018-07-04 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| CN105280665B (zh) * | 2014-06-23 | 2020-05-15 | 晶元光电股份有限公司 | 光电元件及其制造方法 |
| US11005017B2 (en) * | 2014-09-02 | 2021-05-11 | Koninklijke Philips N.V. | Light source |
| JP6544962B2 (ja) * | 2015-03-27 | 2019-07-17 | 東レエンジニアリング株式会社 | Ledモジュールおよびledモジュールの製造方法 |
| CN105485573B (zh) * | 2015-12-31 | 2019-02-15 | 广东晶科电子股份有限公司 | 一种高色域直下式led背光模组 |
| JP2018060867A (ja) * | 2016-10-03 | 2018-04-12 | 株式会社ディスコ | 発光ダイオードチップの製造方法 |
| JP6729275B2 (ja) * | 2016-10-12 | 2020-07-22 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
| US10886437B2 (en) * | 2016-11-03 | 2021-01-05 | Lumileds Llc | Devices and structures bonded by inorganic coating |
| JP2018074111A (ja) * | 2016-11-04 | 2018-05-10 | 株式会社ディスコ | 発光ダイオードチップの製造方法 |
| JP2018078142A (ja) * | 2016-11-07 | 2018-05-17 | 株式会社ディスコ | 発光ダイオードチップの製造方法 |
| CN108573660B (zh) * | 2017-03-12 | 2021-04-09 | 美科米尚技术有限公司 | 显示装置 |
| US10141290B2 (en) * | 2017-03-12 | 2018-11-27 | Mikro Mesa Technology Co., Ltd. | Display device and method for manufacturing the same |
| US10026757B1 (en) | 2017-03-12 | 2018-07-17 | Mikro Mesa Technology Co., Ltd. | Micro-light emitting display device |
| WO2020244857A1 (en) * | 2019-06-05 | 2020-12-10 | Lumileds Holding B.V. | Bonding of phosphor converter emitters |
| CN114080676A (zh) | 2019-06-25 | 2022-02-22 | 亮锐有限责任公司 | 用于微led应用的磷光体层 |
| US11362243B2 (en) | 2019-10-09 | 2022-06-14 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
| US11177420B2 (en) | 2019-10-09 | 2021-11-16 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
| EP3855515A1 (en) | 2020-01-23 | 2021-07-28 | Lumileds LLC | Manufacturing phosphor wavelength conversion layer |
| US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
| US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
| US11411146B2 (en) | 2020-10-08 | 2022-08-09 | Lumileds Llc | Protection layer for a light emitting diode |
| US12027651B2 (en) | 2021-01-06 | 2024-07-02 | Lumileds Llc | Lateral light collection and wavelength conversion for a light-emitting device |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5671986A (en) * | 1979-11-16 | 1981-06-15 | Semiconductor Res Found | Light emanating diode |
| JP2836686B2 (ja) | 1993-03-31 | 1998-12-14 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JP3525773B2 (ja) * | 1998-12-02 | 2004-05-10 | 日亜化学工業株式会社 | 窒化物半導体基板およびそれを用いた窒化物半導体素子 |
| JP3469484B2 (ja) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JP4097343B2 (ja) * | 1999-01-26 | 2008-06-11 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子の製造方法 |
| JP2001203393A (ja) | 2000-01-19 | 2001-07-27 | Matsushita Electric Works Ltd | 発光ダイオード |
| TW465123B (en) | 2000-02-02 | 2001-11-21 | Ind Tech Res Inst | High power white light LED |
| US6777871B2 (en) * | 2000-03-31 | 2004-08-17 | General Electric Company | Organic electroluminescent devices with enhanced light extraction |
| JP4151284B2 (ja) * | 2001-03-05 | 2008-09-17 | 日亜化学工業株式会社 | 窒化物半導体発光素子及び発光装置並びにそれらの製造方法 |
| JP2002319708A (ja) | 2001-04-23 | 2002-10-31 | Matsushita Electric Works Ltd | Ledチップおよびled装置 |
| TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
| JP4193471B2 (ja) * | 2001-12-14 | 2008-12-10 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| JP2003243727A (ja) * | 2001-12-14 | 2003-08-29 | Nichia Chem Ind Ltd | 発光装置 |
| US7515336B2 (en) * | 2001-12-21 | 2009-04-07 | Bose Corporation | Selective reflecting |
| US6943379B2 (en) * | 2002-04-04 | 2005-09-13 | Toyoda Gosei Co., Ltd. | Light emitting diode |
| JP2003347601A (ja) | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | 発光ダイオード照明装置 |
| US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
-
2004
- 2004-04-01 JP JP2004109431A patent/JP4590905B2/ja not_active Expired - Fee Related
- 2004-10-28 US US10/974,945 patent/US7388232B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005191514A (ja) | 2005-07-14 |
| US20050093008A1 (en) | 2005-05-05 |
| US7388232B2 (en) | 2008-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4590905B2 (ja) | 発光素子および発光装置 | |
| JP5689225B2 (ja) | 発光装置 | |
| JP4254266B2 (ja) | 発光装置及び発光装置の製造方法 | |
| JP5326705B2 (ja) | 発光装置 | |
| TWI394301B (zh) | 發光裝置封裝件及製造其之方法 | |
| US8835951B2 (en) | Light emitting device | |
| JP2007242856A (ja) | チップ型半導体発光素子 | |
| JP2016058689A (ja) | 半導体発光装置 | |
| JP2016171188A (ja) | 半導体発光装置とその製造方法 | |
| JP7633580B2 (ja) | 発光装置 | |
| JP3533345B2 (ja) | 半導体発光装置 | |
| JP6222325B2 (ja) | 発光装置 | |
| JP6665143B2 (ja) | 発光装置の製造方法 | |
| JP2015099940A (ja) | 発光装置 | |
| JP6680302B2 (ja) | 発光装置 | |
| JP5931006B2 (ja) | 発光装置 | |
| JP6825636B2 (ja) | 発光装置 | |
| JP2016058551A (ja) | 半導体発光装置 | |
| JP7299537B2 (ja) | 発光装置 | |
| JP6274240B2 (ja) | 発光装置 | |
| JP7011196B2 (ja) | 発光装置 | |
| JP7545085B2 (ja) | 発光装置 | |
| JP2008166311A (ja) | 半導体発光素子及び半導体発光装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060919 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060925 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090310 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090414 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20090603 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090615 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090630 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090828 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100817 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100830 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |