JP4580633B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4580633B2
JP4580633B2 JP2003385645A JP2003385645A JP4580633B2 JP 4580633 B2 JP4580633 B2 JP 4580633B2 JP 2003385645 A JP2003385645 A JP 2003385645A JP 2003385645 A JP2003385645 A JP 2003385645A JP 4580633 B2 JP4580633 B2 JP 4580633B2
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Prior art keywords
electrode
opening
connecting member
layer
disposed
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Expired - Fee Related
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JP2003385645A
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English (en)
Japanese (ja)
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JP2005150386A (ja
JP2005150386A5 (enExample
Inventor
正彦 土谷
直史 堀尾
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Priority to JP2003385645A priority Critical patent/JP4580633B2/ja
Priority to US10/962,109 priority patent/US7285858B2/en
Priority to EP04026606.6A priority patent/EP1531492A3/en
Publication of JP2005150386A publication Critical patent/JP2005150386A/ja
Publication of JP2005150386A5 publication Critical patent/JP2005150386A5/ja
Priority to US11/681,124 priority patent/US7470987B2/en
Application granted granted Critical
Publication of JP4580633B2 publication Critical patent/JP4580633B2/ja
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US10/962,109 US7285858B2 (en) 2003-11-14 2004-10-08 Semiconductor device and its manufacture method capable of preventing short circuit of electrodes when semiconductor device is mounted on sub-mount substrate
EP04026606.6A EP1531492A3 (en) 2003-11-14 2004-11-09 Semiconductor device and its manufacturing method capable of preventing short circuit of electrodes when semiconductor device is mounted on sub-mount substrate
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