JP4553410B2 - 新しい浅いトレンチ分離技術 - Google Patents

新しい浅いトレンチ分離技術 Download PDF

Info

Publication number
JP4553410B2
JP4553410B2 JP51505097A JP51505097A JP4553410B2 JP 4553410 B2 JP4553410 B2 JP 4553410B2 JP 51505097 A JP51505097 A JP 51505097A JP 51505097 A JP51505097 A JP 51505097A JP 4553410 B2 JP4553410 B2 JP 4553410B2
Authority
JP
Japan
Prior art keywords
trench
oxide layer
silicon substrate
layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP51505097A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11513538A (ja
JPH11513538A5 (enExample
Inventor
ムーン，ピーター・ケイ
ランドー，バーミ・ダブリュ
クリック，デイヴィッド・ティ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JPH11513538A publication Critical patent/JPH11513538A/ja
Publication of JPH11513538A5 publication Critical patent/JPH11513538A5/ja
Application granted granted Critical
Publication of JP4553410B2 publication Critical patent/JP4553410B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP51505097A 1995-09-29 1996-09-23 新しい浅いトレンチ分離技術 Expired - Fee Related JP4553410B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/536,694 US5719085A (en) 1995-09-29 1995-09-29 Shallow trench isolation technique
US08/536,694 1995-09-29
PCT/US1996/015281 WO1997014175A2 (en) 1995-09-29 1996-09-23 Novel shallow trench isolation technique

Publications (3)

Publication Number Publication Date
JPH11513538A JPH11513538A (ja) 1999-11-16
JPH11513538A5 JPH11513538A5 (enExample) 2004-09-02
JP4553410B2 true JP4553410B2 (ja) 2010-09-29

Family

ID=24139539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51505097A Expired - Fee Related JP4553410B2 (ja) 1995-09-29 1996-09-23 新しい浅いトレンチ分離技術

Country Status (9)

Country Link
US (1) US5719085A (enExample)
EP (1) EP0856197B1 (enExample)
JP (1) JP4553410B2 (enExample)
KR (1) KR100316221B1 (enExample)
AU (1) AU7370296A (enExample)
DE (1) DE69638085D1 (enExample)
IL (1) IL123750A (enExample)
TW (1) TW353215B (enExample)
WO (1) WO1997014175A2 (enExample)

Families Citing this family (310)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191026B1 (en) 1996-01-09 2001-02-20 Applied Materials, Inc. Method for submicron gap filling on a semiconductor substrate
US5904543A (en) * 1996-03-28 1999-05-18 Advanced Micro Devices, Inc Method for formation of offset trench isolation by the use of disposable spacer and trench oxidation
US5933746A (en) * 1996-04-23 1999-08-03 Harris Corporation Process of forming trench isolation device
JP4195734B2 (ja) * 1996-06-10 2008-12-10 テキサス インスツルメンツ インコーポレイテツド 集積回路のトレンチ分離製作方法
US5725739A (en) * 1996-07-08 1998-03-10 Micron Technology, Inc. Low angle, low energy physical vapor deposition of alloys
US6114741A (en) * 1996-12-13 2000-09-05 Texas Instruments Incorporated Trench isolation of a CMOS structure
US5780346A (en) 1996-12-31 1998-07-14 Intel Corporation N2 O nitrided-oxide trench sidewalls and method of making isolation structure
TW388100B (en) 1997-02-18 2000-04-21 Hitachi Ulsi Eng Corp Semiconductor deivce and process for producing the same
US5811346A (en) * 1997-04-14 1998-09-22 Vlsi Technology, Inc. Silicon corner rounding in shallow trench isolation process
US5863827A (en) * 1997-06-03 1999-01-26 Texas Instruments Incorporated Oxide deglaze before sidewall oxidation of mesa or trench
US6080677A (en) * 1997-06-17 2000-06-27 Vlsi Technology, Inc. Method for preventing micromasking in shallow trench isolation process etching
US6399462B1 (en) * 1997-06-30 2002-06-04 Cypress Semiconductor Corporation Method and structure for isolating integrated circuit components and/or semiconductor active devices
US6455394B1 (en) 1998-03-13 2002-09-24 Micron Technology, Inc. Method for trench isolation by selective deposition of low temperature oxide films
US7157385B2 (en) * 2003-09-05 2007-01-02 Micron Technology, Inc. Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
US5801083A (en) * 1997-10-20 1998-09-01 Chartered Semiconductor Manufacturing, Ltd. Use of polymer spacers for the fabrication of shallow trench isolation regions with rounded top corners
US6194283B1 (en) * 1997-10-29 2001-02-27 Advanced Micro Devices, Inc. High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacers
US6143625A (en) * 1997-11-19 2000-11-07 Texas Instruments Incorporated Protective liner for isolation trench side walls and method
US6306725B1 (en) 1997-11-19 2001-10-23 Texas Instruments Incorporated In-situ liner for isolation trench side walls and method
US6140251A (en) * 1997-12-10 2000-10-31 Intel Corporation Method of processing a substrate
US6194038B1 (en) * 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6285054B1 (en) * 1998-03-30 2001-09-04 Advanced Micro Devices, Inc. Trenched gate non-volatile semiconductor device with the source/drain regions spaced from the trench by sidewall dopings
KR100515037B1 (ko) * 1998-06-03 2005-11-30 삼성전자주식회사 트렌치 격리 제조 방법
KR100327656B1 (ko) * 1998-06-29 2002-07-02 박종섭 반도체소자의소자분리막제조방법
JP4592837B2 (ja) * 1998-07-31 2010-12-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6265282B1 (en) * 1998-08-17 2001-07-24 Micron Technology, Inc. Process for making an isolation structure
KR100287181B1 (ko) * 1998-09-21 2001-04-16 윤종용 트렌치소자분리영역을갖는반도체소자및그제조방법
KR100475048B1 (ko) * 1998-09-24 2005-05-27 삼성전자주식회사 이중층의 질화물라이너를 갖는 트렌치 소자분리방법
KR100292616B1 (ko) * 1998-10-09 2001-07-12 윤종용 트렌치격리의제조방법
TW410423B (en) * 1998-10-21 2000-11-01 United Microelectronics Corp Manufacture method of shallow trench isolation
TW396521B (en) * 1998-11-06 2000-07-01 United Microelectronics Corp Process for shallow trench isolation
DE69841104D1 (de) * 1998-12-10 2009-10-08 St Microelectronics Srl Herstellungsverfahren für eine SOI-Scheibe
TW400605B (en) * 1999-01-16 2000-08-01 United Microelectronics Corp The manufacturing method of the Shallow Trench Isolation (STI)
US6140208A (en) * 1999-02-05 2000-10-31 International Business Machines Corporation Shallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applications
US6027982A (en) * 1999-02-05 2000-02-22 Chartered Semiconductor Manufacturing Ltd. Method to form shallow trench isolation structures with improved isolation fill and surface planarity
TW530372B (en) 1999-03-09 2003-05-01 Mosel Vitelic Inc Shallow trench isolation process
US6316815B1 (en) * 1999-03-26 2001-11-13 Vanguard International Semiconductor Corporation Structure for isolating integrated circuits in semiconductor substrate and method for making it
TW406353B (en) * 1999-04-08 2000-09-21 Mosel Vitelic Inc Method of forming a concave oxidized structure at the trench bottom
US6180489B1 (en) * 1999-04-12 2001-01-30 Vanguard International Semiconductor Corporation Formation of finely controlled shallow trench isolation for ULSI process
US6270353B1 (en) 1999-06-07 2001-08-07 International Business Machines Corporation Low cost shallow trench isolation using non-conformal dielectric material
GB9915589D0 (en) * 1999-07-02 1999-09-01 Smithkline Beecham Plc Novel compounds
US6265283B1 (en) * 1999-08-12 2001-07-24 Advanced Micro Devices, Inc. Self-aligning silicon oxynitride stack for improved isolation structure
US6300219B1 (en) * 1999-08-30 2001-10-09 Micron Technology, Inc. Method of forming trench isolation regions
US6503843B1 (en) 1999-09-21 2003-01-07 Applied Materials, Inc. Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill
US6228727B1 (en) * 1999-09-27 2001-05-08 Chartered Semiconductor Manufacturing, Ltd. Method to form shallow trench isolations with rounded corners and reduced trench oxide recess
KR100338767B1 (ko) 1999-10-12 2002-05-30 윤종용 트렌치 소자분리 구조와 이를 갖는 반도체 소자 및 트렌치 소자분리 방법
JP2001144170A (ja) * 1999-11-11 2001-05-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100335495B1 (ko) * 1999-11-12 2002-05-08 윤종용 디봇 발생을 방지하며 공정이 간단한 소자분리막의 제조방법
US6150234A (en) * 1999-12-16 2000-11-21 Vlsi Technology, Inc. Trench-diffusion corner rounding in a shallow-trench (STI) process
US6683345B1 (en) 1999-12-20 2004-01-27 International Business Machines, Corp. Semiconductor device and method for making the device having an electrically modulated conduction channel
KR100358130B1 (ko) * 1999-12-24 2002-10-25 주식회사 하이닉스반도체 트렌치 저면의 스트레스 집중 현상을 완화시킬 수 있는 트렌치형 소자분리막 형성방법
US20070114631A1 (en) * 2000-01-20 2007-05-24 Hidenori Sato Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device
US6221735B1 (en) * 2000-02-15 2001-04-24 Philips Semiconductors, Inc. Method for eliminating stress induced dislocations in CMOS devices
US6326283B1 (en) * 2000-03-07 2001-12-04 Vlsi Technology, Inc. Trench-diffusion corner rounding in a shallow-trench (STI) process
US6541382B1 (en) * 2000-04-17 2003-04-01 Taiwan Semiconductor Manufacturing Company Lining and corner rounding method for shallow trench isolation
US6303413B1 (en) * 2000-05-03 2001-10-16 Maxim Integrated Products, Inc. Method of forming a shallow and deep trench isolation (SDTI) suitable for silicon on insulator (SOI) substrates
US6559026B1 (en) 2000-05-25 2003-05-06 Applied Materials, Inc Trench fill with HDP-CVD process including coupled high power density plasma deposition
US6437417B1 (en) * 2000-08-16 2002-08-20 Micron Technology, Inc. Method for making shallow trenches for isolation
US6335288B1 (en) 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
JP4847671B2 (ja) * 2000-10-19 2011-12-28 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 誘導結合プラズマを用いて基板をエッチングする装置および方法
JP2002170877A (ja) * 2000-12-01 2002-06-14 Sharp Corp 半導体装置の製造方法
US6897120B2 (en) * 2001-01-03 2005-05-24 Micron Technology, Inc. Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrate
US6541349B2 (en) 2001-01-18 2003-04-01 International Business Machines Corporation Shallow trench isolation using non-conformal dielectric and planarizatrion
US6740601B2 (en) * 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
US6596653B2 (en) * 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
US6518641B2 (en) * 2001-05-18 2003-02-11 International Business Machines Corporation Deep slit isolation with controlled void
US6890859B1 (en) 2001-08-10 2005-05-10 Cypress Semiconductor Corporation Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby
JP3656103B2 (ja) * 2001-09-19 2005-06-08 国立大学法人富山大学 液晶表示素子
JP3577024B2 (ja) * 2001-10-09 2004-10-13 エルピーダメモリ株式会社 半導体装置及びその製造方法
US6548399B1 (en) 2001-11-20 2003-04-15 Intel Corporation Method of forming a semiconductor device using a carbon doped oxide layer to control the chemical mechanical polishing of a dielectric layer
KR100426484B1 (ko) * 2001-12-22 2004-04-14 주식회사 하이닉스반도체 플래쉬 메모리 셀 및 그의 제조방법
US7439141B2 (en) * 2001-12-27 2008-10-21 Spansion, Llc Shallow trench isolation approach for improved STI corner rounding
US6869880B2 (en) * 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
US6524930B1 (en) 2002-04-25 2003-02-25 Texas Instruments Incorporated Method for forming a bottom corner rounded STI
US6812153B2 (en) * 2002-04-30 2004-11-02 Applied Materials Inc. Method for high aspect ratio HDP CVD gapfill
US20040016962A1 (en) * 2002-04-30 2004-01-29 Hideki Okumura Semiconductor device
US6908862B2 (en) * 2002-05-03 2005-06-21 Applied Materials, Inc. HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
DE10234165B4 (de) * 2002-07-26 2008-01-03 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Füllen eines Grabens, der in einem Substrat gebildet ist, mit einem isolierenden Material
US6825097B2 (en) 2002-08-07 2004-11-30 International Business Machines Corporation Triple oxide fill for trench isolation
TWI238473B (en) * 2002-08-30 2005-08-21 Fujitsu Amd Semiconductor Ltd Semiconductor device and the manufacturing method thereof
US6902867B2 (en) * 2002-10-02 2005-06-07 Lexmark International, Inc. Ink jet printheads and methods therefor
KR100821484B1 (ko) * 2002-10-02 2008-04-10 동부일렉트로닉스 주식회사 반도체 소자 제조 방법
US6802944B2 (en) * 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US7628897B2 (en) * 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US7097886B2 (en) * 2002-12-13 2006-08-29 Applied Materials, Inc. Deposition process for high aspect ratio trenches
US7238588B2 (en) * 2003-01-14 2007-07-03 Advanced Micro Devices, Inc. Silicon buffered shallow trench isolation
US7422961B2 (en) * 2003-03-14 2008-09-09 Advanced Micro Devices, Inc. Method of forming isolation regions for integrated circuits
US6962857B1 (en) 2003-02-05 2005-11-08 Advanced Micro Devices, Inc. Shallow trench isolation process using oxide deposition and anneal
US7648886B2 (en) * 2003-01-14 2010-01-19 Globalfoundries Inc. Shallow trench isolation process
US6808748B2 (en) * 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
JP4694769B2 (ja) * 2003-01-27 2011-06-08 エルピーダメモリ株式会社 半導体装置の製造方法
JP4544876B2 (ja) * 2003-02-25 2010-09-15 三洋電機株式会社 半導体装置の製造方法
US7081414B2 (en) * 2003-05-23 2006-07-25 Applied Materials, Inc. Deposition-selective etch-deposition process for dielectric film gapfill
US6958112B2 (en) * 2003-05-27 2005-10-25 Applied Materials, Inc. Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
US7205240B2 (en) * 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
US7125815B2 (en) * 2003-07-07 2006-10-24 Micron Technology, Inc. Methods of forming a phosphorous doped silicon dioxide comprising layer
US6921709B1 (en) 2003-07-15 2005-07-26 Advanced Micro Devices, Inc. Front side seal to prevent germanium outgassing
US6903031B2 (en) * 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US7055912B2 (en) * 2003-09-23 2006-06-06 Terry Lynn Luscombe Vehicle mounted utility apparatus with quick attachment means
US20050095808A1 (en) * 2003-11-04 2005-05-05 Industrial Technology Research Institute Thermal oxidation method for topographic feature corner rounding
JP2005142319A (ja) * 2003-11-06 2005-06-02 Renesas Technology Corp 半導体装置の製造方法
US20050136684A1 (en) * 2003-12-23 2005-06-23 Applied Materials, Inc. Gap-fill techniques
US7462549B2 (en) * 2004-01-12 2008-12-09 Advanced Micro Devices, Inc. Shallow trench isolation process and structure with minimized strained silicon consumption
US20070123051A1 (en) * 2004-02-26 2007-05-31 Reza Arghavani Oxide etch with nh4-nf3 chemistry
US7087497B2 (en) * 2004-03-04 2006-08-08 Applied Materials Low-thermal-budget gapfill process
US7053010B2 (en) * 2004-03-22 2006-05-30 Micron Technology, Inc. Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells
US20050260356A1 (en) * 2004-05-18 2005-11-24 Applied Materials, Inc. Microcontamination abatement in semiconductor processing
US7229931B2 (en) * 2004-06-16 2007-06-12 Applied Materials, Inc. Oxygen plasma treatment for enhanced HDP-CVD gapfill
US7183227B1 (en) * 2004-07-01 2007-02-27 Applied Materials, Inc. Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas
US7045436B2 (en) 2004-07-27 2006-05-16 Texas Instruments Incorporated Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI)
US7279397B2 (en) * 2004-07-27 2007-10-09 Texas Instruments Incorporated Shallow trench isolation method
US7045410B2 (en) * 2004-07-27 2006-05-16 Texas Instruments Incorporated Method to design for or modulate the CMOS transistor threshold voltage using shallow trench isolation (STI)
US7235459B2 (en) 2004-08-31 2007-06-26 Micron Technology, Inc. Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry
US7087536B2 (en) * 2004-09-01 2006-08-08 Applied Materials Silicon oxide gapfill deposition using liquid precursors
US7176138B2 (en) * 2004-10-21 2007-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Selective nitride liner formation for shallow trench isolation
KR100610017B1 (ko) * 2004-11-26 2006-08-08 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
TW200625437A (en) * 2004-12-30 2006-07-16 Macronix Int Co Ltd Shallow trench isolation process of forming smooth edge angle by cleaning procedure
US20060154494A1 (en) 2005-01-08 2006-07-13 Applied Materials, Inc., A Delaware Corporation High-throughput HDP-CVD processes for advanced gapfill applications
US7217634B2 (en) * 2005-02-17 2007-05-15 Micron Technology, Inc. Methods of forming integrated circuitry
US7510966B2 (en) * 2005-03-07 2009-03-31 Micron Technology, Inc. Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines
US8012847B2 (en) 2005-04-01 2011-09-06 Micron Technology, Inc. Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
US7199020B2 (en) * 2005-04-11 2007-04-03 Texas Instruments Incorporated Nitridation of STI liner oxide for modulating inverse width effects in semiconductor devices
US7915173B2 (en) * 2005-05-05 2011-03-29 Macronix International Co., Ltd. Shallow trench isolation structure having reduced dislocation density
CN100468651C (zh) * 2005-05-09 2009-03-11 联华电子股份有限公司 沟槽绝缘方法
KR100695868B1 (ko) * 2005-06-23 2007-03-19 삼성전자주식회사 소자 분리막과 그 제조 방법, 이를 갖는 반도체 장치 및 그제조 방법
US7329586B2 (en) * 2005-06-24 2008-02-12 Applied Materials, Inc. Gapfill using deposition-etch sequence
JP2007035823A (ja) * 2005-07-26 2007-02-08 Elpida Memory Inc トレンチ形成方法、半導体装置の製造方法および半導体装置
US8802537B1 (en) * 2005-07-27 2014-08-12 Spansion Llc System and method for improving reliability in a semiconductor device
US7811935B2 (en) * 2006-03-07 2010-10-12 Micron Technology, Inc. Isolation regions and their formation
US7524750B2 (en) 2006-04-17 2009-04-28 Applied Materials, Inc. Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
US7682977B2 (en) * 2006-05-11 2010-03-23 Micron Technology, Inc. Methods of forming trench isolation and methods of forming arrays of FLASH memory cells
US7358145B2 (en) * 2006-06-15 2008-04-15 Macronix International Co., Ltd. Method of fabricating shallow trench isolation structure
US8012846B2 (en) * 2006-08-04 2011-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures and methods of fabricating isolation structures
KR100790296B1 (ko) * 2006-12-04 2008-01-02 주식회사 하이닉스반도체 플래시 메모리 소자의 제조방법
US7939422B2 (en) * 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
KR100818711B1 (ko) * 2006-12-07 2008-04-01 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
US20080142483A1 (en) * 2006-12-07 2008-06-19 Applied Materials, Inc. Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
KR100845102B1 (ko) * 2006-12-20 2008-07-09 동부일렉트로닉스 주식회사 반도체 소자의 소자분리막 형성방법
US8736016B2 (en) * 2007-06-07 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Strained isolation regions
KR100856315B1 (ko) * 2007-06-22 2008-09-03 주식회사 동부하이텍 반도체 소자의 제조 방법
US7678715B2 (en) * 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
CN101546730B (zh) * 2008-03-25 2010-10-20 中芯国际集成电路制造(上海)有限公司 一种减小hdp对有源区损伤的方法
US8105956B2 (en) 2009-10-20 2012-01-31 Micron Technology, Inc. Methods of forming silicon oxides and methods of forming interlevel dielectrics
US20110115019A1 (en) * 2009-11-13 2011-05-19 Maxim Integrated Products, Inc. Cmos compatible low gate charge lateral mosfet
US8987818B1 (en) 2009-11-13 2015-03-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US8963241B1 (en) 2009-11-13 2015-02-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with poly field plate extension for depletion assist
US20110115018A1 (en) * 2009-11-13 2011-05-19 Maxim Integrated Products, Inc. Mos power transistor
US8946851B1 (en) 2009-11-13 2015-02-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US8969958B1 (en) 2009-11-13 2015-03-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with body extension region for poly field plate depletion assist
US8304863B2 (en) 2010-02-09 2012-11-06 International Business Machines Corporation Electromigration immune through-substrate vias
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8835994B2 (en) 2010-06-01 2014-09-16 International Business Machines Corporation Reduced corner leakage in SOI structure and method
US8349653B2 (en) 2010-06-02 2013-01-08 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional metal interconnect technologies
US10672748B1 (en) 2010-06-02 2020-06-02 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional heterogeneous technologies integration
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8497211B2 (en) 2011-06-24 2013-07-30 Applied Materials, Inc. Integrated process modulation for PSG gapfill
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US8883021B2 (en) * 2012-03-30 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS nanostructures and methods of forming the same
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
CN105712291B (zh) * 2014-12-04 2018-07-06 北京北方华创微电子装备有限公司 斜槽刻蚀方法
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11562923B2 (en) * 2020-05-05 2023-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor arrangement including a first electrical insulator layer and a second electrical insulator layer and method of making
US12176440B2 (en) * 2021-11-03 2024-12-24 Winbond Electronics Corp. Semiconductor structure with an air gap and method of forming the same
CN114725004A (zh) * 2022-03-22 2022-07-08 矽力杰半导体技术(杭州)有限公司 半导体器件及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226182A (en) * 1975-08-25 1977-02-26 Hitachi Ltd Manufacturing method of semi-conductor unit
JPS55117243A (en) * 1979-03-02 1980-09-09 Chiyou Lsi Gijutsu Kenkyu Kumiai Fabrication of semiconductor device
JPS5848936A (ja) * 1981-09-10 1983-03-23 Fujitsu Ltd 半導体装置の製造方法
JPH073858B2 (ja) * 1984-04-11 1995-01-18 株式会社日立製作所 半導体装置の製造方法
US4580330A (en) * 1984-06-15 1986-04-08 Texas Instruments Incorporated Integrated circuit isolation
JPS63234534A (ja) * 1987-03-24 1988-09-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
US5258332A (en) * 1987-08-28 1993-11-02 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices including rounding of corner portions by etching
JP2955459B2 (ja) * 1993-12-20 1999-10-04 株式会社東芝 半導体装置の製造方法
JP3396553B2 (ja) * 1994-02-04 2003-04-14 三菱電機株式会社 半導体装置の製造方法及び半導体装置
US5453395A (en) * 1994-03-21 1995-09-26 United Microelectronics Corp. Isolation technology using liquid phase deposition
US5455194A (en) * 1995-03-06 1995-10-03 Motorola Inc. Encapsulation method for localized oxidation of silicon with trench isolation

Also Published As

Publication number Publication date
AU7370296A (en) 1997-04-30
DE69638085D1 (de) 2009-12-31
HK1015541A1 (en) 1999-10-15
KR19990063841A (ko) 1999-07-26
IL123750A0 (en) 1998-10-30
JPH11513538A (ja) 1999-11-16
US5719085A (en) 1998-02-17
IL123750A (en) 2002-08-14
EP0856197A4 (en) 2000-08-09
EP0856197A2 (en) 1998-08-05
EP0856197B1 (en) 2009-11-18
WO1997014175A2 (en) 1997-04-17
TW353215B (en) 1999-02-21
KR100316221B1 (ko) 2002-03-13

Similar Documents

Publication Publication Date Title
JP4553410B2 (ja) 新しい浅いトレンチ分離技術
US6071792A (en) Methods of forming shallow trench isolation regions using plasma deposition techniques
US6261923B1 (en) Method to solve the dishing issue in CMP planarization by using a nitride hard mask for local inverse etchback and CMP
JP3933371B2 (ja) 高選択性ｃｍｐを用いた集積回路装置のトレンチ素子分離方法
JP2005322872A (ja) トレンチ型素子分離膜を備えた半導体素子の製造方法
KR100251280B1 (ko) 샐로우 트랜치 아이솔레이션 방법
US6001696A (en) Trench isolation methods including plasma chemical vapor deposition and lift off
US6602759B2 (en) Shallow trench isolation for thin silicon/silicon-on-insulator substrates by utilizing polysilicon
US6271147B1 (en) Methods of forming trench isolation regions using spin-on material
US20060141731A1 (en) Method for forming shallow trench isolation in semiconductor device
US6344374B1 (en) Method of fabricating insulators for isolating electronic devices
US6159821A (en) Methods for shallow trench isolation
KR100475025B1 (ko) 반도체소자의 소자분리절연막 형성방법
KR100355870B1 (ko) 반도체 소자 분리를 위한 얕은 트렌치 제조 방법
KR100274978B1 (ko) 반도체 소자 분리를 위한 얕은 트랜치 제조 방법
KR100419754B1 (ko) 반도체소자의 소자분리막 형성방법
KR100214530B1 (ko) 트렌치 소자격리구조 형성방법
IL137358A (en) Shallow trench isolation technique for semiconductor substrate
HK1015541B (en) Novel shallow trench isolation technique
KR20010061041A (ko) 반도체소자의 소자분리막 형성방법
KR100575080B1 (ko) 소자 분리막 형성 방법
KR100228345B1 (ko) 반도체 장치의 소자분리 방법
KR20050003021A (ko) 반도체 소자의 제조방법
KR19990004549A (ko) 반도체 소자의 소자분리막 제조방법
KR20060066390A (ko) 반도체 소자의 소자 분리막 형성 방법

Legal Events

Date Code Title Description
A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20070123

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20070426

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070515

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20070815

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20070921

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070918

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080408

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080806

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20080904

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20081009

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090728

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090811

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100204

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100304

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100517

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100713

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130723

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees