JP4535303B2 - 超低静電容量配線のためのエアギャップを備える半導体装置の製造 - Google Patents

超低静電容量配線のためのエアギャップを備える半導体装置の製造 Download PDF

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JP4535303B2
JP4535303B2 JP53464998A JP53464998A JP4535303B2 JP 4535303 B2 JP4535303 B2 JP 4535303B2 JP 53464998 A JP53464998 A JP 53464998A JP 53464998 A JP53464998 A JP 53464998A JP 4535303 B2 JP4535303 B2 JP 4535303B2
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sacrificial material
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JP2001514798A (ja
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コール、ポール・エイ
ザオ、キアン
アレン、スー・アン・ビズトラップ
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ザ ビー．エフ． グッドリッチ カンパニー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Ceramic Capacitors (AREA)
JP53464998A 1997-01-21 1998-01-21 超低静電容量配線のためのエアギャップを備える半導体装置の製造 Expired - Fee Related JP4535303B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3584897P 1997-01-21 1997-01-21
US60/035,848 1997-01-21
PCT/US1998/001049 WO1998032169A1 (fr) 1997-01-21 1998-01-21 Fabrication d'un dispositif semi-conducteur pourvu d'espaces d'air pour des interconnexions a capacite tres faible

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009185706A Division JP5390295B2 (ja) 1997-01-21 2009-08-10 超低静電容量配線のためのエアギャップを備える半導体装置の製造
JP2010025535A Division JP5144693B2 (ja) 1997-01-21 2010-02-08 超低静電容量配線のためのエアギャップを備える半導体装置の製造

Publications (2)

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JP2001514798A JP2001514798A (ja) 2001-09-11
JP4535303B2 true JP4535303B2 (ja) 2010-09-01

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JP53464998A Expired - Fee Related JP4535303B2 (ja) 1997-01-21 1998-01-21 超低静電容量配線のためのエアギャップを備える半導体装置の製造
JP2009185706A Expired - Fee Related JP5390295B2 (ja) 1997-01-21 2009-08-10 超低静電容量配線のためのエアギャップを備える半導体装置の製造
JP2010025535A Expired - Lifetime JP5144693B2 (ja) 1997-01-21 2010-02-08 超低静電容量配線のためのエアギャップを備える半導体装置の製造

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JP2009185706A Expired - Fee Related JP5390295B2 (ja) 1997-01-21 2009-08-10 超低静電容量配線のためのエアギャップを備える半導体装置の製造
JP2010025535A Expired - Lifetime JP5144693B2 (ja) 1997-01-21 2010-02-08 超低静電容量配線のためのエアギャップを備える半導体装置の製造

Country Status (11)

Country Link
US (2) US6165890A (fr)
EP (2) EP1376684B1 (fr)
JP (3) JP4535303B2 (fr)
KR (1) KR100532801B1 (fr)
CN (1) CN1252810C (fr)
AT (2) ATE255769T1 (fr)
AU (1) AU736875B2 (fr)
DE (2) DE69840276D1 (fr)
HK (1) HK1061742A1 (fr)
RU (1) RU2204181C2 (fr)
WO (1) WO1998032169A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009275228A (ja) * 1997-01-21 2009-11-26 Bf Goodrich Co 超低静電容量配線のためのエアギャップを備える半導体装置の製造

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