ATE415704T1 - Herstellung eines halbleiterbauelements mit luftspalten für niedrigstkapazitive leiterbahnen - Google Patents

Herstellung eines halbleiterbauelements mit luftspalten für niedrigstkapazitive leiterbahnen

Info

Publication number
ATE415704T1
ATE415704T1 AT03022238T AT03022238T ATE415704T1 AT E415704 T1 ATE415704 T1 AT E415704T1 AT 03022238 T AT03022238 T AT 03022238T AT 03022238 T AT03022238 T AT 03022238T AT E415704 T1 ATE415704 T1 AT E415704T1
Authority
AT
Austria
Prior art keywords
air
gaps
sacrificial material
gapes
production
Prior art date
Application number
AT03022238T
Other languages
English (en)
Inventor
Paul A Kohl
Qiang Zhao
Sue Ann Bidstrup Allen
Original Assignee
Georgia Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Georgia Tech Res Inst filed Critical Georgia Tech Res Inst
Application granted granted Critical
Publication of ATE415704T1 publication Critical patent/ATE415704T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Ceramic Capacitors (AREA)
AT03022238T 1997-01-21 1998-01-21 Herstellung eines halbleiterbauelements mit luftspalten für niedrigstkapazitive leiterbahnen ATE415704T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3584897P 1997-01-21 1997-01-21

Publications (1)

Publication Number Publication Date
ATE415704T1 true ATE415704T1 (de) 2008-12-15

Family

ID=21885155

Family Applications (2)

Application Number Title Priority Date Filing Date
AT98901841T ATE255769T1 (de) 1997-01-21 1998-01-21 Verfahren zur herstellung einer halbleitervorrichtung mit luftspalten für verbindungen mit ultraniedriger kapazität
AT03022238T ATE415704T1 (de) 1997-01-21 1998-01-21 Herstellung eines halbleiterbauelements mit luftspalten für niedrigstkapazitive leiterbahnen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT98901841T ATE255769T1 (de) 1997-01-21 1998-01-21 Verfahren zur herstellung einer halbleitervorrichtung mit luftspalten für verbindungen mit ultraniedriger kapazität

Country Status (10)

Country Link
US (2) US6165890A (de)
EP (2) EP1376684B1 (de)
JP (3) JP4535303B2 (de)
KR (1) KR100532801B1 (de)
CN (1) CN1252810C (de)
AT (2) ATE255769T1 (de)
AU (1) AU736875B2 (de)
DE (2) DE69820232T2 (de)
RU (1) RU2204181C2 (de)
WO (1) WO1998032169A1 (de)

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EP1376684B1 (de) 2008-11-26
JP2010147495A (ja) 2010-07-01
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DE69820232T2 (de) 2004-09-16
ATE255769T1 (de) 2003-12-15
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WO1998032169A1 (en) 1998-07-23
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DE69820232D1 (de) 2004-01-15
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AU5826998A (en) 1998-08-07
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