JP4531400B2 - エアギャップ含有半導体デバイスの製造方法及び得られる半導体デバイス - Google Patents
エアギャップ含有半導体デバイスの製造方法及び得られる半導体デバイス Download PDFInfo
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- JP4531400B2 JP4531400B2 JP2003582804A JP2003582804A JP4531400B2 JP 4531400 B2 JP4531400 B2 JP 4531400B2 JP 2003582804 A JP2003582804 A JP 2003582804A JP 2003582804 A JP2003582804 A JP 2003582804A JP 4531400 B2 JP4531400 B2 JP 4531400B2
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- vinyl
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Images
Classifications
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- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76289—Lateral isolation by air gap
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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Description
で表されるシラン50〜95モル%、
(b)下記式:
で表されるシラン5〜40モル%、及び
(c)下記式:
で表されるシラン0〜45モル%
を含む、加水分解された又は部分的に加水分解された生成物の混合物である組成物が特に好ましい。前記モル百分率は、ハードマスク組成物中のシラン(a)、(b)及び(c)の総モル数に基づいている。
物質、又はポリマーを含む。このように、誘電体材料中に多孔性が造られ、密度が低められ、又は犠牲層の分解生成物に対する誘電体材料の透過性が高めら
れる。
A)犠牲ポリマー−α−メチルスチレン/ビニルベンゾシクロブテンコポリマー
1L容丸底フラスコに、マグネチック・スターラー・バー、温度計、ガス入口アダプタ及びセプタムを備える。フラスコをセ氏110度まで加熱し、乾燥窒素の流れを用いて乾燥する。次いで、フラスコを氷/水浴中で冷却する。乾燥シクロヘキサン400ミリリットル及び乾燥テトラヒドロフラン38ミリリットルをフラスコに添加する。αメチルスチレン(アルミナ上を通して妨害剤(inhibitor)を除去し、次いで水素化カルシウムから蒸留)82.6グラムをカニューレによってフラスコに添加する。ビニルベンゾシクロブテン(水素化カルシウムから蒸留により精製し、ブチルリチウムを用いて永続的な(persistent)色になるまで処理し、次いで再度蒸留)39グラムをシリンジによってフラスコに添加する。
a)(4−(3,5−ビス(フェニルエチニル)フェニル)−2,3,5−トリフェニルシクロペンタジエノン)
《1−フェニルエチニル−3,5−ジブロモベンゼンの合成》
予備乾燥したマグネチック・スターラー・バーを含む予備乾燥した500ミリリットル容ガラス製3つ口丸底反応器に、乾燥窒素雰囲気下で、1,3,5−トリブロモベンゼン(31.48グラム、0.10モル);フェニルアセチレン(10.22グラム、0.10モル);無水の(anhydrous)、窒素スパージした(nitrogen sparged)トリエチルアミン(48.18グラム、0.476モル);トリフェニルホスフィン(0.66グラム、0.00253モル);パラジウム(II)アセテート(0.09グラム、0.00041モル)及び無水の、窒素スパージしたN,N−ジメチルホルムアミド(90ミリリットル)を添加した。反応器に、更に、ファン冷却式スパイラル型冷却器及びサーモスタット制御式加熱マントル付き温度計を備えた。攪拌及び加熱を開始し、そして14分後、温度35℃に達した時に、透明で、薄い琥珀色の溶液が生じた。累積1.6時間の反応時間の後、温度80℃に達しそして次の17.2時間この温度を維持した。この時点で、高速液体クロマトグラフィー(HPLC)分析は、フェニルアセチレン反応体の完全な(full)変換が達成されたことを示した。2リットル容ビーカー中に含まれた砕氷上に反応器内容物を注いだ。氷が完全に溶けた後、沈殿した生成物を、中間フリットガラス漏斗(medium fritted glass funnel)を通した濾過によって回収した。漏斗上の生成物ケーキを、脱イオン水で2回(100ミリリットル)洗浄し、次いで沸騰エタノール(沸騰時の全容量350ミリリットル)から、湿潤生成物として、直接に再結晶させた。再結晶溶液を室温まで冷却し、そして16時間室温で保持し、濾過及び真空下の乾燥(40℃及び1mmHg)による回収後に薄黄色の繊維状結晶性生成物17.1グラムを得た。HPLC分析は、所望の1−フェニルエチニル−3,5−ジブロモベンゼン生成物89面積%、残留の1,3,5−トリブロモベンゼン4面積%及び単一の未知成分として残余分7面積%を示した。1H核磁気共鳴(NMR)分析により測定されたスペクトルは、所望の生成物と一致した。
チルド(2℃)冷却器、サーモスタット制御式加熱マントル付き温度計、及びマグネチック・スターラー・バーを備えた500ミリリットル容ガラス製3つ口丸底反応器に、1−フェニルエチニル−3,5−ジブロモベンゼン(6.94グラム)を含有する生成物の一部及びジメチルスルホキシド(100ミリリットル)を添加した。反応器の内容物を攪拌溶液として140℃まで加熱し、次いでヨウ素(0.07グラム、0.00055モル)を添加した。反応温度140℃で3日後、熱生成物溶液を25℃まで冷却し、その結果、黄色の結晶性スラリーが形成された。10%ヒドロ亜硫酸ナトリウム水溶液(87ミリリットル)、脱イオン水(100ミリリットル)及びジエチルエーテル(200ミリリットル)の攪拌混合物を含むビーカーに前記スラリーを添加した。1時間の攪拌後、ジエチルエーテル層を分液漏斗中に回収し、次いで脱イオン水で3回(75ミリリットル)洗浄した。回収したジエチルエーテル溶液を無水硫酸ナトリウム上で乾燥し、そして中間フリットガラス漏斗を通して濾過して濾液を得、次いでこれをロータリーエバポレーターで蒸発乾固した。この粗製生成物を沸騰エタノールから再結晶させた。この再結晶溶液を室温まで冷却し、そして室温に16時間保持して、薄黄色のフワフワした(fluffy)結晶性生成物5.70グラムを得た。HPLC分析は、単一の未知成分としての残余分1面積%と共に、所望の3,5−ジブロモベンジル生成物99面積%の存在を示した。1H−NMRは、所望の生成物のものと一致した。
予備乾燥したマグネチック・スターラー・バーを含む予備乾燥した500ミリリットル容ガラス製3つ口丸底反応器に、乾燥窒素雰囲気下で、3,5−ジブロモベンジル(12.50グラム、0.0679臭素相当)、フェニルアセチレン(8.40グラム、0.0822モル)、無水の、窒素スパージしたトリエチルアミン(18.77グラム、0.186モル)、トリフェニルホスフィン(0.45グラム、0.0017モル)、パラジウム(II)アセテート(0.06グラム、0.00028モル)及び無水の、窒素スパージしたN,N−ジメチルホルムアミド(79ミリリットル)を添加した。反応器に、更に、ファン冷却式スパイラル型冷却器及びサーモスタット制御式加熱マントル付き温度計を備えた。この薄琥珀色溶液の攪拌及び加熱を開始し、そして13分後、温度80℃に達しそしてこの温度に次の15.1時間保持した。この時点で、HPLC分析は、3,5−ジブロモベンジル反応体の完全な変換が達成されたことを示した。2リットル容ビーカー中に含まれた砕氷上に反応器内容物を注いだ。氷が完全に溶けた後、沈殿した生成物を、中間フリットガラス漏斗を通した濾過によって回収した。漏斗上の生成物ケーキを、脱イオン水で2回(100ミリリットル)洗浄し、次いで沸騰アセトン(沸騰時の全容量160ミリリットル)から、湿潤生成物として、直接に再結晶させた。再結晶溶液を室温まで冷却し、そして16時間室温に保持し、濾過及び真空下の乾燥(40℃及び1mmHg)による回収後に黄色の繊維状結晶性生成物10.90グラム(単離収率78.2%)を得た。HPLC分析は、所望の3,5−ビス(フェニルエチニル)ベンジル生成物100面積%の存在を示した。1H−NMRスペクトルは、所望の生成物と一致した。電子衝撃イオン化質量分析(electron ionization mass spectroscopic analysis)(EIMS)により生成物の同一性を確認した。
予備乾燥したマグネチック・スターラー・バーを含む予備乾燥した500ミリリットル容ガラス製3つ口丸底反応器に、乾燥窒素雰囲気下で、3,5−ビス(フェニルエチニル)ベンジルの一部(10.87グラム、0.0265モル)、1,3−ジフェニルアセトン(5.90グラム、0.0281モル)、及び何れも乾燥窒素でスパージした無水1−プロパノール(300ミリリットル)及び無水トルエン(17ミリリットル)を添加した。反応器に、更に、ファン冷却式スパイラル型冷却器及びサーモスタット制御式加熱マントル付き温度計を備えた。攪拌及び加熱を開始し、そして還流する透明な薄黄色の溶液が生じた後、ベンジルトリメチルアンモニウムヒドロキシド(メタノール中40%)(0.91グラム)を添加し、直後に暗赤色が誘発された。還流を20分間維持した後、HPLC分析は、3,5−ビス[フェニルエチニル)ベンジル反応体の完全な変換が達成されたことを示した。累積30分間の反応後、反応器から加熱マントルを除去し、そして攪拌内容物を次の16時間24℃に維持した。中間フリットガラス漏斗を通して濾過することにより生成物を回収した。漏斗上の生成物ケーキを1−プロパノールで2回(50ミリリットル)洗浄し、次いで真空炉中で乾燥し、暗赤紫色の結晶性生成物として4−(3,5−ビス(フェニルエチニル)フェニル)−2,3,5−トリフェニルシクロペンタジエノン(非対称置換3,5−AABモノマー)11.84グラム(単離収率76.4%)を得た。HPLC分析は、所望生成物100面積%の存在を示した。1HNMR及びEIMS分析によって生成物の同一性を確認した。
20%添加量(loading level)の架橋スチレン/ジビニルベンゼン微小乳化重合粒子(crosslinked styrene/divinylbenzene microemulsion polymerized particle)を伴う及び伴わない(with out) 、4−(3,5−ビス(フェニルエチニル)フェニル)−2,3,5−トリフェニルシクロペンタジエノン及びγ−ブチロラクトン希釈剤のスピンコーティング用組成物を、200℃に48時間加熱することによりB段階化した。高純度脱イオン水;ノニルフェノールエトキシレート界面活性剤、例えば、ザ・ダウ・ケミカル・カンパニーから入手することができるTergitol(商標)NP−15;90/10(w/w)スチレン/ジビニルベンゼンモノマーミックス;及びt−ブチルヒドロペルオキシド及びアスコルビン酸含有遊離基開始剤を用いて、30℃において微小乳化重合(microemulsion polymerization)の技法により気孔形成性材料を調製し、極めて小さい、<50nmDvのポラゲン粒子を得た。得られた溶液をシクロヘキサノンで希釈して固形分20%の溶液を得た。次いで、これらの溶液を用いて、密度1.05g/cm3を有するスピンコートされた硬化誘電体コーティングを調製した。ハードマスク材料を含有するポラゲンの場合、熱分解によってポラゲンを除去してコーティングの密度を更に0.9g/cm3まで低減した。
犠牲ポリマーとして用いるために、重合スチレン70モル%及び重合ビニルベンゾシクロブテン30モル%を含有するスチレン/ビニルベンゾシクロブテンコポリマーの5%メシチレン溶液を調製する。
WO02/16477に記載のようにビニルトリアセトキシシラン及びフェニルトリメトキシシランモノマーの加水分解及びそれに続く共重合によって、ハードマスク用のオリゴマ−前駆体として用いる架橋性オルガノシロキサン組成物を調製する。
1) 前記犠牲ポリマー溶液を電子基板上に60rpmで付与し、3000rpmで30秒間スピンさせ、そして窒素下に250℃で20分間ベークする
2) 標準的なリソグラフィー及びエッチング法を用いて犠牲ポリマーコーティングをパターン形成して相互接続パターンを形成する。相互接続パターン中に導電金属を堆積する。化学的/機械的研磨法によりウエハの表面を研磨して堆積した金属過重分を除去しそして露光される導体及び犠牲ポリマーの水平表面を与える
3) 前記架橋性オルガノシロキサン溶液を、プロピレングリコールメチルエーテルアセテート(ザ・ダウ・ケミカル・カンパニーから入手することができる、Dowanol(商標)PMA)中に4%固形分まで希釈する。この溶液をウエハの表面に600rpmで付与し、3000rpmで30秒間スピンさせ、そして265℃で60秒間ベークし、このようにして密度1.3g/cm3を有するハードマスク誘電体層を造る
4) 窒素下で室温において炉中にサンプル多層ウエハを置き、1時間にわたり430℃までランプ(ramp)し、そして430℃に40分間保持する。室温まで冷却した後、光学的検査によってハードマスク層は欠陥を含んでいないことが見出される。顕微鏡試験は、ハードマスク層への有害な影響無しに、分解及びそれに続くハードマスクを通じた透過により犠牲ポリマーが除去されることを示す。
32...基板
34...導電層
36...永久誘電体層
38...エアギャップ
Claims (11)
- 半導体デバイス内部に少なくとも部分的なエアギャップを形成する方法であって、(a)デバイスの形成の間に該デバイスの層1つ以上に犠牲ポリマー組成物を堆積する段階と、(b)2.2g/cm3より小さい密度を有する比較的非孔質で、有機で、ポリマー性の、絶縁性誘電体材料(ハードマスク)により前記デバイスをコーティングする段階と、及び(c)分解生成物がハードマスク層1つ以上を少なくとも部分的に通って透過し、それによって前記デバイス内部に少なくとも部分的なエアギャップを形成するように、前記犠牲ポリマー組成物を分解する段階とを含み、
前記犠牲ポリマーが、アクリレート、ビニル芳香族炭化水素、ノルボルネン、及びアルキルジオールジアクリレートからなる群より選ばれる第一のモノマーと、ビニルベンゾシクロブテン及び1,3ビス2[4−ベンゾシクロブテニル(エテニル)]ベンゼンからなる群より選ばれる第二のモノマーとのコポリマーである、方法。 - 前記第二のモノマーが、ビニルベンゾシクロブテンである、請求項1に記載の方法。
- 前記犠牲ポリマーが、(a)5−エチリデン−2−ノルボルネンとビニルベンゾシクロブテン(又はビニルベンゾシクロブテン誘導体)とのコポリマー、(d)スチレン(又はスチレンの誘導体)とビニルベンゾシクロブテン(又はビニルベンゾシクロブテン誘導体)とのコポリマー、又は(e)ビス[3−(4−ベンゾシクロブテニル)]1,n(n=2〜12)アルキルジオールジアクリレートと1,3ビス2[4−ベンゾシクロブテニル(エテニル)]ベンゼンとのコポリマーである、請求項1に記載の方法。
- 前記犠牲ポリマーが、該ポリマー中に含まれるモノマーの全モル数に基づいて、スチレン又はスチレン誘導体99〜40モル%及びビニルベンゾシクロブテン又はビニルベンゾシクロブテン誘導体1〜60モル%を含有するコポリマーである、請求項1に記載の方法。
- 前記犠牲ポリマーがα−メチルスチレンとビニルベンゾシクロブテンとのコポリマーである、請求項1に記載の方法。
- 前記ハードマスクが、置換アルコキシシラン又は置換アシルオキシシランの加水分解又は部分的加水分解反応生成物から形成される硬化生成物である、請求項1に記載の方法。
- 前記ハードマスクが、下記式:
で表される置換アルコキシ又はアシルオキシシランの加水分解反応生成物を含有する、請求項6に記載の方法。 - 前記誘電体材料がポリアリーレン樹脂を含有する、請求項1に記載の方法。
- 前記誘電体材料が、犠牲材料の分解と同時に又はその前に活性化され又は除去され、それによって層中に気孔又は空隙を導入する気孔形成性物質を含有する、請求項1〜8のいずれか一項に記載の方法。
- 前記気孔形成性物質が架橋乳化重合コポリマーである、請求項9に記載の方法。
- 請求項6〜9のいずれか一項に記載の方法によって調製されたエアギャップを含有する半導体デバイス。
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PCT/US2003/009956 WO2003085719A2 (en) | 2002-04-02 | 2003-04-01 | Process for making air gap containing semiconducting devices and resulting semiconducting device |
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US20050124172A1 (en) | 2005-06-09 |
WO2003085719A3 (en) | 2004-07-01 |
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AU2003233470A8 (en) | 2003-10-20 |
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