JP4814522B2 - ポリマーの使用方法 - Google Patents
ポリマーの使用方法 Download PDFInfo
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- JP4814522B2 JP4814522B2 JP2004545424A JP2004545424A JP4814522B2 JP 4814522 B2 JP4814522 B2 JP 4814522B2 JP 2004545424 A JP2004545424 A JP 2004545424A JP 2004545424 A JP2004545424 A JP 2004545424A JP 4814522 B2 JP4814522 B2 JP 4814522B2
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/28—Treatment by wave energy or particle radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
- B81B2201/058—Microfluidics not provided for in B81B2201/051 - B81B2201/054
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/0338—Channels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0369—Static structures characterized by their profile
- B81B2203/0384—Static structures characterized by their profile sloped profile
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0108—Sacrificial polymer, ashing of organics
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0041—Optical brightening agents, organic pigments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Description
この出願は、2002年10月16日に出願された整理番号60/418,930の「Fabrication of Microchannels using Polynorbornene Photosensitive Sacrificial Materials」と題する同時継続米国仮出願の優先権を主張し、その全てをここで参考に取り込む。
米国政府は、この発明の出資ライセンスおよび、制限環境下にて特許所有権者にこの特許を、米国政府の米国立科学財団(認可#DMI−9980804)により与えられたMDAの期間として提供される合理的期間、他人に許諾させる権利を有する。
により表すことができる。すなわち、熱分解プロフィールを設計するために、四つのパラメーターを特定することが有用である。各ポリマーのポリマー分解を説明する三つの動的パラメーター(A、Eaおよびn)、および、所望のポリマー分解率であるr。実施例1は、熱分解プロフィール式をより詳細に説明する。
微小流体装置を設計および製造する際に、曲線形状のチャンネルが必要であることは殆ど避けられない。例えば、チップ上の長い分離カラムを設計する際、装置を必要な寸法制限内に維持するためにチャンネルを蛇行経路に変えることが必要であった。そのような場合、チャンネルを通して移動する流体の滞留時間分布の相違を最小化するようにチャンネル中で流体流動パターンを正確に制御することが極めて重要であり得る。換言すると、通常、分離、分析および、注入または分離後の流体サンプルの混合および空間的制限の損失を防止するための他の流体操作のために用いられる装置中で「栓流」に近い条件を維持しようとする。一つの特別の問題は、微小流体チャンネルのコーナーおよび曲線セクションを通過して移動する流体のための滞留時間変動を最小化することである。この点を説明すると共に、テーパー断面を有するチャンネルを用いることにより実現され得る改良を検討するために、一連のコンピューター流体力学シュミレーションを行った。
使用した捨てポリマーは、5−ブチルノルボルネン(BuNB)と5−アルケニルノルボルネン(ANB)との73/27のモル比のコポリマーを含むUnity(登録商標)4481Pであった(オハイオ州ブレクスヴィル在Promerus LLC製)。ポリスチレン検定標準を用いるゲルパーミエーションクロマトグラフィーによりポリマーの重量平均分子量(MW)および多分散度指数(PDI)を測定すると、それぞれ、425,000および3.74であった。フリーラジカル光開始剤(PI)として、ビス(2,4,6−トリメチルベンゾイル)−フェニルホスフィンオキシド(イルガキュア819、チバ・スペシャルティ・ケミカルズ社製)を用いた。溶媒としてメシチレン(MS、97%、アルドリッチ社製)を用いて、ポリノルノルネン(PNB)およびPIの溶液を調製した。二つの異なる組成である16/0.32/84のモル比のPNB/PI/MS(乾燥ポリマーに対して開始剤2重量%)および16/0.64/84のモル比のPNB/PI/MS(乾燥ポリマーに対して開始剤4重量%)を実験で用いた。露光および焼成後、キシレン(98.5+%、アルドリッチ社製)を用いてポリマーパターンを現像した。
に示すようなTG曲線から部分分解を計算することができる。
に示すように表される。
分解条件:非揮発性分解産物の形成および微小チャンネル中の望ましくない残渣につながり得るポリマーの酸化を避けるために純窒素雰囲気中で感光性捨てポリマーの熱分解を行った。不活性雰囲気の使用に加えて、先に提示したように、制御された加熱プロフィールを用いて、比較的一定のポリマー分解率を維持した。この一定分解率は、チャンネル形状を著しく変形させる高圧を発生させるような気体産物が放出されないことを確保する。
シュミレーションしたチャンネルパターンの概要は、式9により計算された点を含み、これを、7点補整式10により補整した。
微小チャンネルの組み立てを、感光性捨てポリマー材料を用いて示した。このプロセスは、光平板印刷により捨てポリマーをパターニングすること、RIEを用いてポリマー残渣を除去すること、誘電性媒体でカプセル封入すること、およびカプセル封入されたポリマーチャンネルパターンを熱的に分解することからなる。ポリマー分解の速度モデルを用いて、捨てポリマーの熱的分解を一定速度に維持するために加熱プログラムを設計する方法が示された。この手法を用いて設計された加熱プロフィールが、突然かつ高度の分解率(例えば、チャンネル構造を変形させる気体分解産物を劇的に放出することになる)を防止するために、および、捨てポリマーの熱的分解後に任意の実質的変形を示さない制御構造を有する微小チャンネルパターンを製造するためにも示された。分解率を制御し気体分解産物をゆっくり放出すると、分解率に大体等しい速度で分解産物が上塗りを透過することができ、構造の変形および損傷につながり得る微小チャンネル中の高圧の形成が避けられる。チャンネルがより大きいと、変形の傾向が大きいことも分かった。テーパー断面を有する微小チャンネルの製造のために、グレースケール平板印刷プロセスが開発され示された。そのようなテーパーチャンネルは、シュミレーションにより、微小流体システムの性能に有害である分散のような効果を下げ得ることが示された。
Claims (9)
- 構造を作る方法であって、
捨てポリマーである感光性ポリマー、および光開始剤を含むポリマー組成物を表面上に配置すること、
感光性ポリマーから形成すべき三次元構造を定める光学密度プロフィールをコード化するグレースケールフォトマスクを感光性ポリマー上に配置すること、
グレースケールフォトマスクを通して感光性ポリマーを光エネルギーに曝すこと、
感光性ポリマーの一部を除去して、架橋感光性ポリマーの三次元構造を形成すること、
上塗り層を三次元構造上に配置すること、および
感光性ポリマーを熱的に分解して三次元空間領域を形成すること
を含んでなる方法。 - 除去が、感光性ポリマーの未露光部分を除去して三次元構造を形成することを含む請求項1に記載の方法。
- 分解が、時間の関数として分解の一定速度を維持することを含む請求項1に記載の方法。
- 分解が、感光性ポリマーの質量損失の一定速度を維持することを含む請求項1に記載の方法。
- 三次元構造が空間的に変化する高さを有する請求項1に記載の方法。
- 三次元空間領域が非矩形断面を有する区域である、請求項1〜6のいずれか1項に記載の方法。
- 三次元空間領域の非矩形断面を有する区域がテーパー断面である、請求項7に記載の方法。
- 非矩形断面の区域を有する三次元空間領域がさらにテーパーコーナー領域により定義される、請求項7に記載の方法。
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WO2004036264A2 (en) | 2004-04-29 |
US8956805B2 (en) | 2015-02-17 |
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US7799516B2 (en) | 2010-09-21 |
US20090069458A1 (en) | 2009-03-12 |
JP2011090335A (ja) | 2011-05-06 |
JP2006503335A (ja) | 2006-01-26 |
EP1551906A2 (en) | 2005-07-13 |
US20070031761A1 (en) | 2007-02-08 |
US20130244181A1 (en) | 2013-09-19 |
US20100203294A1 (en) | 2010-08-12 |
KR20050083777A (ko) | 2005-08-26 |
WO2004036264A3 (en) | 2004-09-30 |
AU2003301344A8 (en) | 2004-05-04 |
JP5726542B2 (ja) | 2015-06-03 |
US20110136932A1 (en) | 2011-06-09 |
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US8455174B2 (en) | 2013-06-04 |
US7745100B2 (en) | 2010-06-29 |
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