JP4524570B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000004020 conductor Substances 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 239000011889 copper foil Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000005304 joining Methods 0.000 description 17
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000013011 mating Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
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- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
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- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/151—Die mounting substrate
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- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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Description
図3(a),(b)は内部配線の接続導体にリードフレームを用いた電力用半導体装置のモデル図であり、図において、1は放熱用金属ベース板、2は絶縁基板(セラミック基板)2aの表,裏両面に銅箔を直接接合して導体パターン2b,2cを形成し、前記金属ベース板1にマウントした回路基板(Direct Bonding Copper基板)、3は回路基板2に搭載した電力用の半導体チップ、4が内部配線用のリードフレームである。ここで、リードフレーム4は帯状の銅板(タフピッチ銅,無酸素銅,リン青銅)を図示のような逆U字形に曲げ加工した形状になり、その両端に形成した接合脚部4aが相手側部材の電極面に超音波接合されている。なお、金属同士の超音波接合法は周知の技術であり、ここではその説明を省略する。
すなわち、図4(a)は回路基板の導体パターン2bにリードフレーム4を超音波接合する前の状態、図4(b)は超音波接合した後の状態を表す図である。まず、図4(a)の超音波接合前の状態でリードフレーム4,導体パターン2bの表面をミクロ的に見ると、金属表面には埃,油分,水分からなる吸着層が付着しており、さらにその下の表面が大気雰囲気中で生成した酸化皮膜5,6で覆われている。なお、この酸化皮膜の膜厚は金属材質,加工時の加熱条件などにより異なり、通常はnm〜数十nm程度までばらつきがある。
しかも、図4(b)のような接合状態のままでは、半導体装置の実使用時に加わるヒートサイクルなどによってリードフレーム4の接合面に応力が繰り返し加わると、図5(a)で示すように酸化皮膜結合部7の層内に凝集破壊が生じてクラック9が発生し、これが原因で図5(b)のようにリードフレーム4が導体パターン2bから剥離して回路が不導通となるトラブルを引き起す。さらに、酸化皮膜は電気抵抗が大きいことから、酸化皮膜結合の状態でその膜厚が厚いと、リードフレーム/導体パターン間の導電性が大きく低下する問題もある。
本発明は上記の点に鑑みなされたものであり、その目的は前記課題を解決し、リードフレームの接合に際して、接合部品の金属表面に生成した酸化皮膜を除去する前処理を必要とせずに、超音波接合の過程で酸化皮膜を積極的に破壊して高い接合強度が確保できるように改良した超音波接合用リードフレームを提供することにある。
なお、前記の酸化皮膜破壊用の突起は、リードフレームと超音波接合する相手側部材の接合面に形成することも考えられるが、一般的に回路基板の導体パターンに使用する銅箔材料はリードフレームの銅材に比べて硬度が低いために、リードフレームの接合面に形成されている酸化皮膜の破壊効果が小さくなるほか、回路基板の導体パターンに突起を形成することは加工性,生産性にも問題があって実用的でない。
すなわち、図1に示す実施例においては、リードフレーム4の接合端面(接合脚部4aの下面)には、微小な角錐状突起7bが多数分散形成されている。この突起7bは、その突起高さを少なくとも回路基板2側の酸化皮膜6の膜厚以上とし、例えば機械的切削加工,エッチング加工,レーザー加工,あるいはスタンピングプレス加工などの手法により形成することができる。なお、突起7bの高さは加工性を考慮して50μm程度とするのがよく、リードフレームを打抜き加工する際に突起を同時にプレス成形することもできる。
そして、上記のように接合面に突起4bを形成したリードフレーム4を用いて回路基板の導体パターンに超音波接合するに際しては、従来のように表面に自然生成した酸化皮膜を除去する前処理を施すことなしに、図1(b)のように回路基板の導体パターン2bの上にリードフレーム4の接合脚部4aを重ね合わせ、その上に超音波ボンディングツール8を押し当てて静圧荷重,超音波振動を印加する。これにより、前記突起4bが導体パターン2bの表面を覆っている酸化皮膜6の上を摺動して酸化皮膜6を破壊し、また、リードフレーム4の接合面を覆っている酸化皮膜も破壊されて導体パターン(銅箔)2bの真性面と直接接触するようになる。なお、この場合にセラミック絶縁基板2aの脆弱性を考慮してボンディングツール8に加える垂直方向の荷重が小さくても、その荷重が突起3bの部分に集中するので、酸化皮膜6は容易に破壊される。また、この際に同時にリードフレーム側の自然酸化膜も破壊される。さらに、超音波振動を継続して印加すると、図1(c)で表すように接合面に塑性流動が生じて前記突起3bは導体パターン2bの金属組成と融合して結合し、またリードフレーム4の前後端側にはすべりによる塑性流動部4−1が生じて導体パターン2bと凝着範囲が拡大する。この結果、リードフレーム4と導体パターン2bとの間が高い接合強度で超音波接合される。この場合に、リードフレーム4の材質は導体パターン2と同材質であってもよく、また所定の形状に成形する加工性,およびヒートサイクルなどによるストレスを吸収する撓み性を持たせるために焼き鈍し処理して所望の硬度に調整するのがよい。
これにより、図2(a),(b)のいずれの実施例でも、リードフレーム4を導体パターン2b(図1参照)に超音波接合する過程では、前記の角柱状突起4c,球面状突起4dの先端面に加圧荷重が集中するので、導体パターン2bの酸化皮膜を効果的に破壊して図1の実施例と同様な効果を奏することができる。
なお、図示実施例ではリードフレーム4と回路基板の導体パターン2bとの超音波接合について述べたが、回路基板上に搭載した半導体チップとリードフレームを超音波接合する場合でも同様に実施できることは勿論である。
2a 絶縁基板
2b 導体パターン(銅箔)
3 半導体チップ
4 リードフレーム
4a 接合脚部
4b 角錐状突起
4c 角柱状突起
4d 球面状突起
5,6 酸化皮膜
7 酸化皮膜結合部
Claims (2)
- セラミック絶縁基板上に形成した銅箔からなる導体パターンに、接続導体としてリードフレームを接合してなる半導体装置において、
前記リードフレームは、前記導体パターンとの接合端面に、突起高さが少なくとも接合相手側の表面に生成した酸化皮膜の膜厚以上である突起を有するとともに前記銅箔より硬度を高く調整した銅材であり、前記導体パターンと超音波接合したことを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記リードフレームに設けた突起が角錐,角柱状の突起であることを特徴とする半導体装置。
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US9484294B2 (en) | 2014-11-12 | 2016-11-01 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP4599929B2 (ja) * | 2004-08-03 | 2010-12-15 | 富士電機システムズ株式会社 | 電力用半導体装置の製造方法 |
JP4612550B2 (ja) * | 2006-01-17 | 2011-01-12 | 超音波工業株式会社 | パワーデバイス用ボンディングリボンおよびこれを用いたボンディング方法 |
JP5152619B2 (ja) * | 2006-02-09 | 2013-02-27 | ダイヤモンド電機株式会社 | 半導体モジュール及びこれを備える半導体装置、並びに、半導体モジュールの製造方法 |
JP5134582B2 (ja) | 2009-02-13 | 2013-01-30 | 日立オートモティブシステムズ株式会社 | 接続構造およびパワーモジュール |
EP2448382A4 (en) * | 2009-06-23 | 2014-03-19 | Toshiba Mitsubishi Elec Inc | ELECTRODE BASE |
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JP5740958B2 (ja) * | 2010-12-15 | 2015-07-01 | 日産自動車株式会社 | 接合方法および被接合部材 |
JP5500117B2 (ja) * | 2011-04-18 | 2014-05-21 | 住友金属鉱山株式会社 | Al−Cuボンディングリボン及びその製造方法 |
JP6279860B2 (ja) * | 2013-09-09 | 2018-02-14 | 三菱電機株式会社 | 半導体装置 |
JP6143884B2 (ja) | 2013-11-26 | 2017-06-07 | 三菱電機株式会社 | パワーモジュール |
JP6448388B2 (ja) * | 2015-01-26 | 2019-01-09 | 三菱電機株式会社 | 電力用半導体装置 |
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JP7026451B2 (ja) * | 2017-05-11 | 2022-02-28 | 三菱電機株式会社 | パワー半導体モジュール及びその製造方法並びに電力変換装置 |
US20190115704A1 (en) * | 2017-10-13 | 2019-04-18 | Kulicke and Soffa Indsutries,Inc. | Conductive terminals, busbars, and methods of preparing the same, and methods of assembling related power |
US20230170323A1 (en) * | 2020-07-22 | 2023-06-01 | Mitsubishi Electric Corporation | Semiconductor device, power converter, moving vehicle, and semiconductor device manufacturing method |
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