JP5152619B2 - 半導体モジュール及びこれを備える半導体装置、並びに、半導体モジュールの製造方法 - Google Patents
半導体モジュール及びこれを備える半導体装置、並びに、半導体モジュールの製造方法 Download PDFInfo
- Publication number
- JP5152619B2 JP5152619B2 JP2007007540A JP2007007540A JP5152619B2 JP 5152619 B2 JP5152619 B2 JP 5152619B2 JP 2007007540 A JP2007007540 A JP 2007007540A JP 2007007540 A JP2007007540 A JP 2007007540A JP 5152619 B2 JP5152619 B2 JP 5152619B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- semiconductor module
- internal terminal
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
好ましくは、前記曲面は、前記内部端子をプレス加工して形成される。より好ましくは、前記曲面を形成する板厚は、前記内部端子の板厚の75%以上の値に設定される。
320 半導体装置
326 ヒートシンク
SM6 モジュール用接着剤
Wo2 外部端子
Wi2 外部端子
BF 枠体
EB 導電端子
SM2 半導体モジュール
IB 絶縁層
Em 主電極層
Es 副電極層
Tr 半導体素子
Sm 主ハンダ層
Ss 副ハンダ層
Wt2 内部端子
αb 端子側フィレット角
Wp 曲面
Claims (6)
- 主電極層及び副電極層がそれぞれ積層された絶縁層と、前記主電極層に積層され且つ電気的に接続された半導体素子とを備える半導体モジュールにおいて、
前記半導体素子と前記副電極層とは、帯状の内部端子によって接続され、
前記主ハンダ層または前記副ハンダ層が接続される前記内部端子の接合面では、板厚方向に対して突出した曲面が形成され、前記主ハンダ層の表面と前記曲面とによって又は前記副ハンダ層の表面と前記曲面とによって形成される端子側接触角が鋭角とされている、ことを特徴とする半導体モジュール。 - 前記曲面は、前記内部端子をプレス加工して形成されることを特徴とする請求項1に記載の半導体モジュール。
- 前記曲面を形成する板厚は、前記内部端子の板厚の75%以上の値に設定されていることを特徴とする請求項2に記載の半導体モジュール。
- 請求項1乃至請求項3の何れか一項に記載の半導体モジュールを少なくとも一つ備え、更に、導電端子を具備する枠体と、前記半導体モジュール及び前記導電端子を電気的に接続させる外部端子と、を備えることを特徴とする半導体装置。
- 前記半導体装置は、電力変換装置を構成し多相交流モータを駆動制御させることを特徴とする請求項4に記載の半導体装置。
- 前記半導体素子の下部と前記主電極層とを電気的に接合させる下部ハンダ工程と、前記半導体素子の上部及び前記副電極層のそれぞれに前記内部端子を接続させる上部ハンダ工程と、が同一工程にて処理されることを特徴とする請求項1乃至請求項5の何れか1項に記載の半導体モジュールの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007007540A JP5152619B2 (ja) | 2006-02-09 | 2007-01-17 | 半導体モジュール及びこれを備える半導体装置、並びに、半導体モジュールの製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006032390 | 2006-02-09 | ||
JP2006032390 | 2006-02-09 | ||
JP2007007540A JP5152619B2 (ja) | 2006-02-09 | 2007-01-17 | 半導体モジュール及びこれを備える半導体装置、並びに、半導体モジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007243157A JP2007243157A (ja) | 2007-09-20 |
JP5152619B2 true JP5152619B2 (ja) | 2013-02-27 |
Family
ID=38588342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007007540A Expired - Fee Related JP5152619B2 (ja) | 2006-02-09 | 2007-01-17 | 半導体モジュール及びこれを備える半導体装置、並びに、半導体モジュールの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5152619B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2858100B1 (en) * | 2012-05-29 | 2020-06-10 | NSK Ltd. | Semiconductor module and production method for same |
JP6246654B2 (ja) * | 2014-05-08 | 2017-12-13 | 京セラ株式会社 | パワー半導体モジュール |
JP6213450B2 (ja) * | 2014-12-01 | 2017-10-18 | 株式会社オートネットワーク技術研究所 | 回路構成体 |
WO2017017901A1 (ja) | 2015-07-29 | 2017-02-02 | パナソニックIpマネジメント株式会社 | 半導体装置 |
JP2017183699A (ja) * | 2016-03-29 | 2017-10-05 | 株式会社ケーヒン | 電力変換装置及び電力変換装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10102166A (ja) * | 1996-09-30 | 1998-04-21 | Kobe Steel Ltd | 銅めっき性に優れたリードフレーム用銅合金材料 |
JP3410969B2 (ja) * | 1997-06-30 | 2003-05-26 | 株式会社東芝 | 半導体装置 |
JP3797786B2 (ja) * | 1998-03-06 | 2006-07-19 | 株式会社神戸製鋼所 | 電気・電子部品用銅合金 |
JP2000049280A (ja) * | 1998-07-31 | 2000-02-18 | Toshiba Corp | 半導体装置とその製造方法 |
US6040626A (en) * | 1998-09-25 | 2000-03-21 | International Rectifier Corp. | Semiconductor package |
JP3314768B2 (ja) * | 1999-10-26 | 2002-08-12 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
JP2003023137A (ja) * | 2001-07-09 | 2003-01-24 | Sansha Electric Mfg Co Ltd | 電力用半導体モジュール |
JP4524570B2 (ja) * | 2004-03-10 | 2010-08-18 | 富士電機システムズ株式会社 | 半導体装置 |
-
2007
- 2007-01-17 JP JP2007007540A patent/JP5152619B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007243157A (ja) | 2007-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8847374B2 (en) | Power semiconductor module and manufacturing method thereof | |
US7487581B2 (en) | Method of manufacturing an inverter device | |
JP5152619B2 (ja) | 半導体モジュール及びこれを備える半導体装置、並びに、半導体モジュールの製造方法 | |
US20020180037A1 (en) | Semiconductor device | |
JP2008042074A (ja) | 半導体装置及び電力変換装置 | |
JP6610568B2 (ja) | 半導体装置 | |
JP2005057130A (ja) | 半導体冷却ユニット | |
JP2010129801A (ja) | 電力用半導体装置 | |
JP7004749B2 (ja) | 回路装置および電力変換装置 | |
JP2021068803A (ja) | 半導体モジュール及び電力変換装置 | |
JP2007043064A (ja) | パワーモジュールの冷却装置 | |
JP2010041809A (ja) | 車両用電力変換装置、パワーモジュール用金属ベースおよびパワーモジュール | |
JP6945418B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP5277747B2 (ja) | 燃料電池の電力変換装置 | |
JP2000092858A (ja) | 電力変換装置 | |
JP7031521B2 (ja) | 電力変換装置 | |
JP2007174759A (ja) | 電力変換装置 | |
WO2018180580A1 (ja) | 半導体装置および電力変換装置 | |
JP7283429B2 (ja) | 電力変換装置 | |
JP5028907B2 (ja) | 半導体装置及び電力変換装置 | |
JP2008041851A (ja) | パワー半導体装置 | |
CN111284331B (zh) | 内建有分流电阻和功率晶体管的马达控制装置 | |
JP7562012B2 (ja) | 半導体装置、電力変換装置、および半導体装置の製造方法 | |
WO2022153620A1 (ja) | 電力変換装置 | |
CN201805393U (zh) | 一种to220封装mosfet多管并联模块 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100115 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100402 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120424 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120608 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121016 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121026 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121120 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121122 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151214 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5152619 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |