JP5134582B2 - 接続構造およびパワーモジュール - Google Patents
接続構造およびパワーモジュール Download PDFInfo
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- JP5134582B2 JP5134582B2 JP2009118448A JP2009118448A JP5134582B2 JP 5134582 B2 JP5134582 B2 JP 5134582B2 JP 2009118448 A JP2009118448 A JP 2009118448A JP 2009118448 A JP2009118448 A JP 2009118448A JP 5134582 B2 JP5134582 B2 JP 5134582B2
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- metal
- metal layer
- terminal
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- 229910052751 metal Inorganic materials 0.000 claims description 244
- 239000002184 metal Substances 0.000 claims description 244
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 58
- 230000017525 heat dissipation Effects 0.000 description 25
- 238000000034 method Methods 0.000 description 25
- 229910000679 solder Inorganic materials 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000005304 joining Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 10
- 238000005336 cracking Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000010008 shearing Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002633 protecting effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01049—Indium [In]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0105—Tin [Sn]
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- H01L2924/01075—Rhenium [Re]
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- H—ELECTRICITY
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Description
超音波によって前記第2の金属と前記第3の金属を接合することを特徴とするパワーモジュールの製造方法。
Claims (2)
- 第1の金属層、第1の絶縁層、第2の金属層、第3の金属層とがこの順で積層構成されている接続構造であって、
前記第3の金属層は、端部を含む第1の領域と、前記第1の領域に含まれない第2の領域とを有し、
前記第3の金属層の第1の領域と、前記第2の金属層との間には、SnもしくはSnを含む合金、又は、InもしくはInを含む合金からなるバッファー金属層が形成されており、
前記第3の金属層の第2の領域においては、前記第3の金属層は前記第2の金属層と直接接続しており、
前記第2の金属層と前記第3の金属層は、超音波接合されていることを特徴とする接続構造。 - 請求項1の接続構造を備えたパワーモジュールであって、
前記第1の金属層は導電性金属であり、
前記第2の金属層は金属パッドであり、
前記第3の金属層は端子であることを特徴とするパワーモジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009118448A JP5134582B2 (ja) | 2009-02-13 | 2009-05-15 | 接続構造およびパワーモジュール |
EP20100000834 EP2219220B1 (en) | 2009-02-13 | 2010-01-27 | Connection structure, power module and method of manufacturing the same |
US12/696,762 US8796563B2 (en) | 2009-02-13 | 2010-01-29 | Connection structure, power module and method of manufacturing the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009030979 | 2009-02-13 | ||
JP2009030979 | 2009-02-13 | ||
JP2009118448A JP5134582B2 (ja) | 2009-02-13 | 2009-05-15 | 接続構造およびパワーモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010212645A JP2010212645A (ja) | 2010-09-24 |
JP5134582B2 true JP5134582B2 (ja) | 2013-01-30 |
Family
ID=42246212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009118448A Expired - Fee Related JP5134582B2 (ja) | 2009-02-13 | 2009-05-15 | 接続構造およびパワーモジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US8796563B2 (ja) |
EP (1) | EP2219220B1 (ja) |
JP (1) | JP5134582B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11672158B2 (en) | 2019-04-01 | 2023-06-06 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5740958B2 (ja) * | 2010-12-15 | 2015-07-01 | 日産自動車株式会社 | 接合方法および被接合部材 |
JP5786378B2 (ja) * | 2011-03-09 | 2015-09-30 | 日立金属株式会社 | 超音波溶接方法 |
JP2013051366A (ja) | 2011-08-31 | 2013-03-14 | Hitachi Ltd | パワーモジュール及びその製造方法 |
JP6033011B2 (ja) * | 2012-09-12 | 2016-11-30 | 三菱電機株式会社 | 電力用半導体装置および電力用半導体装置の製造方法 |
DE102013105528B4 (de) * | 2013-05-29 | 2021-09-02 | Rogers Germany Gmbh | Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
JP6366723B2 (ja) | 2014-08-28 | 2018-08-01 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP6448388B2 (ja) * | 2015-01-26 | 2019-01-09 | 三菱電機株式会社 | 電力用半導体装置 |
JP6433590B2 (ja) * | 2015-06-11 | 2018-12-05 | 三菱電機株式会社 | 電力用半導体装置の製造方法および電力用半導体装置 |
JP6538513B2 (ja) * | 2015-10-02 | 2019-07-03 | 株式会社 日立パワーデバイス | 半導体パワーモジュールおよび移動体 |
JP6567957B2 (ja) * | 2015-11-12 | 2019-08-28 | 京セラ株式会社 | パワー半導体モジュールの製造方法 |
JP6685143B2 (ja) | 2016-02-03 | 2020-04-22 | 三菱電機株式会社 | 電極端子、半導体装置及び電力変換装置 |
JP7026451B2 (ja) * | 2017-05-11 | 2022-02-28 | 三菱電機株式会社 | パワー半導体モジュール及びその製造方法並びに電力変換装置 |
JP6444451B2 (ja) * | 2017-05-22 | 2018-12-26 | 三菱電機株式会社 | インサート樹脂成形品 |
CN107511582A (zh) * | 2017-10-18 | 2017-12-26 | 哈尔滨工业大学(威海) | 一种提高软质金属和硬质金属异种材料超声波点焊接头强度的方法 |
KR102599351B1 (ko) * | 2017-11-06 | 2023-11-08 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
WO2020075549A1 (ja) * | 2018-10-09 | 2020-04-16 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP2023128078A (ja) * | 2022-03-02 | 2023-09-14 | 株式会社デンソー | 半導体装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5512728A (en) * | 1978-07-14 | 1980-01-29 | Hitachi Ltd | Regin sealing type power transistor |
JPS6450595A (en) * | 1987-08-21 | 1989-02-27 | Oki Electric Ind Co Ltd | Connection of semiconductor device |
US5175609A (en) * | 1991-04-10 | 1992-12-29 | International Business Machines Corporation | Structure and method for corrosion and stress-resistant interconnecting metallurgy |
JP2998942B2 (ja) | 1991-07-15 | 2000-01-17 | 株式会社東芝 | ボンディングツール及びそれを用いたボンディング方法 |
JP2883787B2 (ja) * | 1993-07-20 | 1999-04-19 | 富士電機株式会社 | パワー半導体装置用基板 |
US5493075A (en) * | 1994-09-30 | 1996-02-20 | International Business Machines Corporation | Fine pitch solder formation on printed circuit board process and product |
JP3372769B2 (ja) | 1996-07-29 | 2003-02-04 | 京セラ株式会社 | 半導体素子収納用パッケージ |
JPH1050758A (ja) * | 1996-08-01 | 1998-02-20 | Hitachi Ltd | 超音波接合方法及び接合構造 |
US5795818A (en) * | 1996-12-06 | 1998-08-18 | Amkor Technology, Inc. | Integrated circuit chip to substrate interconnection and method |
DE10020374A1 (de) * | 1999-07-02 | 2001-01-25 | Fujitsu Ltd | Kopfbaugruppe einer Plattenvorrichtung mit einem Kopf-IC-Chip, der durch Ultraschallbonden an eine Aufhängung montiert ist |
JP3439417B2 (ja) * | 2000-03-23 | 2003-08-25 | Necエレクトロニクス株式会社 | 半導体パッケージ用接続導体、半導体パッケージ、及び半導体パッケージの組立方法 |
JP2002222832A (ja) * | 2001-01-29 | 2002-08-09 | Nec Corp | 半導体装置及び半導体素子の実装方法 |
JP2002280416A (ja) | 2001-03-19 | 2002-09-27 | Fuji Xerox Co Ltd | フレキシブル配線板とicチップとのマトリックス接合方法 |
US6541352B2 (en) * | 2001-07-27 | 2003-04-01 | Texas Instruments Incorporated | Semiconductor die with contoured bottom surface and method for making same |
JP2003045920A (ja) | 2001-07-31 | 2003-02-14 | Mitsubishi Electric Corp | 電力用半導体装置及び電力用半導体装置の製造方法 |
US20040217488A1 (en) * | 2003-05-02 | 2004-11-04 | Luechinger Christoph B. | Ribbon bonding |
JP4524570B2 (ja) * | 2004-03-10 | 2010-08-18 | 富士電機システムズ株式会社 | 半導体装置 |
JP4557804B2 (ja) * | 2005-05-31 | 2010-10-06 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
JP2007088030A (ja) | 2005-09-20 | 2007-04-05 | Fuji Electric Holdings Co Ltd | 半導体装置 |
JP4798432B2 (ja) * | 2005-11-21 | 2011-10-19 | ミネベア株式会社 | 面状照明装置 |
JP2007173363A (ja) | 2005-12-20 | 2007-07-05 | Fujitsu Ltd | フライングリードの接合方法 |
JP2007251009A (ja) | 2006-03-17 | 2007-09-27 | Asahi Glass Co Ltd | 半導体素子実装基板の製造方法および半導体素子実装基板 |
US8164176B2 (en) * | 2006-10-20 | 2012-04-24 | Infineon Technologies Ag | Semiconductor module arrangement |
JP4894528B2 (ja) | 2007-01-17 | 2012-03-14 | トヨタ自動車株式会社 | 半導体素子の配線接合方法 |
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2009
- 2009-05-15 JP JP2009118448A patent/JP5134582B2/ja not_active Expired - Fee Related
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2010
- 2010-01-27 EP EP20100000834 patent/EP2219220B1/en not_active Not-in-force
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11672158B2 (en) | 2019-04-01 | 2023-06-06 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
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EP2219220A2 (en) | 2010-08-18 |
EP2219220B1 (en) | 2015-03-11 |
US8796563B2 (en) | 2014-08-05 |
JP2010212645A (ja) | 2010-09-24 |
US20100206632A1 (en) | 2010-08-19 |
EP2219220A3 (en) | 2011-09-28 |
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