JP4487472B2 - 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ - Google Patents

磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ Download PDF

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Publication number
JP4487472B2
JP4487472B2 JP2002196662A JP2002196662A JP4487472B2 JP 4487472 B2 JP4487472 B2 JP 4487472B2 JP 2002196662 A JP2002196662 A JP 2002196662A JP 2002196662 A JP2002196662 A JP 2002196662A JP 4487472 B2 JP4487472 B2 JP 4487472B2
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magnetic
layer
film
electron
magnetoresistive
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JP2002196662A
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Japanese (ja)
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JP2004039941A5 (enExample
JP2004039941A (ja
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宏昌 高橋
純 早川
進 添谷
顕知 伊藤
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2002196662A priority Critical patent/JP4487472B2/ja
Priority to US10/331,664 priority patent/US6917088B2/en
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Publication of JP2004039941A5 publication Critical patent/JP2004039941A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
  • Semiconductor Memories (AREA)
JP2002196662A 2002-07-05 2002-07-05 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ Expired - Fee Related JP4487472B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002196662A JP4487472B2 (ja) 2002-07-05 2002-07-05 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ
US10/331,664 US6917088B2 (en) 2002-07-05 2002-12-31 Magneto-resistive devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002196662A JP4487472B2 (ja) 2002-07-05 2002-07-05 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ

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JP2004039941A5 JP2004039941A5 (enExample) 2005-09-08
JP4487472B2 true JP4487472B2 (ja) 2010-06-23

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US (1) US6917088B2 (enExample)
JP (1) JP4487472B2 (enExample)

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JP2006278386A (ja) 2005-03-28 2006-10-12 Alps Electric Co Ltd 磁気検出素子
JP4483666B2 (ja) 2005-04-08 2010-06-16 Ｔｄｋ株式会社 磁気検出素子及びその製造方法
US7443638B2 (en) * 2005-04-22 2008-10-28 Taiwan Semiconductor Manufacturing Company Ltd. Magnetoresistive structures and fabrication methods
US7655708B2 (en) * 2005-08-18 2010-02-02 Eastman Kodak Company Polymeric black pigment dispersions and ink jet ink compositions
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JP2008004811A (ja) 2006-06-23 2008-01-10 Tdk Corp 磁界検出素子の製造方法、磁界検出素子、積層体、ウエハ、ヘッドジンバルアセンブリ、およびハードディスク装置
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US7936028B2 (en) * 2007-11-09 2011-05-03 Samsung Electronics Co., Ltd. Spin field effect transistor using half metal and method of manufacturing the same
JP5419121B2 (ja) * 2008-03-21 2014-02-19 国立大学法人大阪大学 ハーフメタリック反強磁性体
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JP5120950B2 (ja) * 2008-08-28 2013-01-16 独立行政法人物質・材料研究機構 磁性薄膜素子
EP2343566A4 (en) * 2008-09-29 2014-04-16 Omron Tateisi Electronics Co MAGNETIC FIELD DETECTION ELEMENT AND SIGNAL TRANSMISSION ELEMENT
US8551626B2 (en) * 2009-06-25 2013-10-08 Seagate Technology Llc CCP-CPP magnetoresistive reader with high GMR value
KR101042338B1 (ko) * 2009-10-08 2011-06-17 한국과학기술연구원 자기터널접합 디바이스 및 그 제조 방법
US8064246B2 (en) * 2009-12-10 2011-11-22 John Casimir Slonczewski Creating spin-transfer torque in oscillators and memories
JP5338714B2 (ja) * 2010-02-24 2013-11-13 Ｔｄｋ株式会社 磁気センサー、磁気検出装置、及び磁気ヘッド
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US8406045B1 (en) 2011-01-19 2013-03-26 Grandis Inc. Three terminal magnetic element
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US9244134B2 (en) * 2013-01-15 2016-01-26 Infineon Technologies Ag XMR-sensor and method for manufacturing the XMR-sensor
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US20040004261A1 (en) 2004-01-08
JP2004039941A (ja) 2004-02-05

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