JP2004039941A5 - - Google Patents

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Publication number
JP2004039941A5
JP2004039941A5 JP2002196662A JP2002196662A JP2004039941A5 JP 2004039941 A5 JP2004039941 A5 JP 2004039941A5 JP 2002196662 A JP2002196662 A JP 2002196662A JP 2002196662 A JP2002196662 A JP 2002196662A JP 2004039941 A5 JP2004039941 A5 JP 2004039941A5
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JP
Japan
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magnetic
layer
magnetic layer
electron
effect element
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JP2002196662A
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English (en)
Japanese (ja)
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JP4487472B2 (ja
JP2004039941A (ja
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Priority to JP2002196662A priority Critical patent/JP4487472B2/ja
Priority claimed from JP2002196662A external-priority patent/JP4487472B2/ja
Priority to US10/331,664 priority patent/US6917088B2/en
Publication of JP2004039941A publication Critical patent/JP2004039941A/ja
Publication of JP2004039941A5 publication Critical patent/JP2004039941A5/ja
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Publication of JP4487472B2 publication Critical patent/JP4487472B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2002196662A 2002-07-05 2002-07-05 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ Expired - Fee Related JP4487472B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002196662A JP4487472B2 (ja) 2002-07-05 2002-07-05 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ
US10/331,664 US6917088B2 (en) 2002-07-05 2002-12-31 Magneto-resistive devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002196662A JP4487472B2 (ja) 2002-07-05 2002-07-05 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ

Publications (3)

Publication Number Publication Date
JP2004039941A JP2004039941A (ja) 2004-02-05
JP2004039941A5 true JP2004039941A5 (enExample) 2005-09-08
JP4487472B2 JP4487472B2 (ja) 2010-06-23

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JP2002196662A Expired - Fee Related JP4487472B2 (ja) 2002-07-05 2002-07-05 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ

Country Status (2)

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US (1) US6917088B2 (enExample)
JP (1) JP4487472B2 (enExample)

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US7936028B2 (en) * 2007-11-09 2011-05-03 Samsung Electronics Co., Ltd. Spin field effect transistor using half metal and method of manufacturing the same
JP5419121B2 (ja) * 2008-03-21 2014-02-19 国立大学法人大阪大学 ハーフメタリック反強磁性体
US8410948B2 (en) * 2008-05-12 2013-04-02 John Vander Horst Recreational vehicle holding tank sensor probe
FR2932315B1 (fr) * 2008-06-09 2010-06-04 Commissariat Energie Atomique Element magnetique tricouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique magnetique mettant en oeuvre un tel element
JP5120950B2 (ja) * 2008-08-28 2013-01-16 独立行政法人物質・材料研究機構 磁性薄膜素子
EP2343566A4 (en) * 2008-09-29 2014-04-16 Omron Tateisi Electronics Co MAGNETIC FIELD DETECTION ELEMENT AND SIGNAL TRANSMISSION ELEMENT
US8551626B2 (en) * 2009-06-25 2013-10-08 Seagate Technology Llc CCP-CPP magnetoresistive reader with high GMR value
KR101042338B1 (ko) * 2009-10-08 2011-06-17 한국과학기술연구원 자기터널접합 디바이스 및 그 제조 방법
US8064246B2 (en) * 2009-12-10 2011-11-22 John Casimir Slonczewski Creating spin-transfer torque in oscillators and memories
JP5338714B2 (ja) * 2010-02-24 2013-11-13 Ｔｄｋ株式会社 磁気センサー、磁気検出装置、及び磁気ヘッド
US8692343B2 (en) 2010-04-26 2014-04-08 Headway Technologies, Inc. MR enhancing layer (MREL) for spintronic devices
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US9116198B2 (en) * 2012-02-10 2015-08-25 Memsic, Inc. Planar three-axis magnetometer
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US9244134B2 (en) * 2013-01-15 2016-01-26 Infineon Technologies Ag XMR-sensor and method for manufacturing the XMR-sensor
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JP6699635B2 (ja) * 2017-08-18 2020-05-27 Tdk株式会社 磁気センサ
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