JP4446891B2 - 垂直積層ポア相変化メモリ - Google Patents

垂直積層ポア相変化メモリ Download PDF

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Publication number
JP4446891B2
JP4446891B2 JP2004560263A JP2004560263A JP4446891B2 JP 4446891 B2 JP4446891 B2 JP 4446891B2 JP 2004560263 A JP2004560263 A JP 2004560263A JP 2004560263 A JP2004560263 A JP 2004560263A JP 4446891 B2 JP4446891 B2 JP 4446891B2
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phase change
layer
change material
bottom electrode
hole
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JP2004560263A
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Japanese (ja)
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JP2006510219A (ja
JP2006510219A5 (enExample
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エイ ラウリー，タイラー
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オヴォニクス，インコーポレイテッド
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Publication of JP2006510219A5 publication Critical patent/JP2006510219A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Inert Electrodes (AREA)
  • Battery Electrode And Active Subsutance (AREA)
JP2004560263A 2002-12-13 2003-04-28 垂直積層ポア相変化メモリ Expired - Fee Related JP4446891B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/319,179 US7049623B2 (en) 2002-12-13 2002-12-13 Vertical elevated pore phase change memory
PCT/US2003/013360 WO2004055915A2 (en) 2002-12-13 2003-04-28 Vertical elevated pore phase change memory

Publications (3)

Publication Number Publication Date
JP2006510219A JP2006510219A (ja) 2006-03-23
JP2006510219A5 JP2006510219A5 (enExample) 2009-05-14
JP4446891B2 true JP4446891B2 (ja) 2010-04-07

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Family Applications (1)

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JP2004560263A Expired - Fee Related JP4446891B2 (ja) 2002-12-13 2003-04-28 垂直積層ポア相変化メモリ

Country Status (8)

Country Link
US (2) US7049623B2 (enExample)
JP (1) JP4446891B2 (enExample)
KR (1) KR100669312B1 (enExample)
CN (1) CN1714461B (enExample)
AU (1) AU2003225226A1 (enExample)
MY (1) MY135245A (enExample)
TW (1) TWI286750B (enExample)
WO (1) WO2004055915A2 (enExample)

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KR100668823B1 (ko) * 2004-06-30 2007-01-16 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
KR100623181B1 (ko) * 2004-08-23 2006-09-19 삼성전자주식회사 상변화 메모리 장치 및 이의 제조 방법
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KR100687750B1 (ko) * 2005-09-07 2007-02-27 한국전자통신연구원 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법
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KR100722769B1 (ko) * 2006-05-19 2007-05-30 삼성전자주식회사 상변화 메모리 장치 및 이의 형성 방법
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Also Published As

Publication number Publication date
KR20050085526A (ko) 2005-08-29
WO2004055915A2 (en) 2004-07-01
US20060054878A1 (en) 2006-03-16
CN1714461B (zh) 2010-12-08
JP2006510219A (ja) 2006-03-23
AU2003225226A1 (en) 2004-07-09
KR100669312B1 (ko) 2007-01-16
TWI286750B (en) 2007-09-11
US7364937B2 (en) 2008-04-29
US7049623B2 (en) 2006-05-23
WO2004055915A3 (en) 2004-08-26
TW200410245A (en) 2004-06-16
US20040115372A1 (en) 2004-06-17
CN1714461A (zh) 2005-12-28
MY135245A (en) 2008-03-31

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