CN1714461A - 垂直上升孔相变存储器 - Google Patents

垂直上升孔相变存储器 Download PDF

Info

Publication number
CN1714461A
CN1714461A CN03825591.XA CN03825591A CN1714461A CN 1714461 A CN1714461 A CN 1714461A CN 03825591 A CN03825591 A CN 03825591A CN 1714461 A CN1714461 A CN 1714461A
Authority
CN
China
Prior art keywords
phase
change material
bottom electrode
aperture
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN03825591.XA
Other languages
English (en)
Other versions
CN1714461B (zh
Inventor
T·A·劳里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovonyx Inc
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of CN1714461A publication Critical patent/CN1714461A/zh
Application granted granted Critical
Publication of CN1714461B publication Critical patent/CN1714461B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Inert Electrodes (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Abstract

一种用于相变存储器(10)的垂直上升孔结构可包括：具有在与小孔(46)中的相变材料(18)接触的小孔下方的下电极的小孔(46)。该下电极可以由较高电阻率层(24)和较高电阻率层(24)下方的较低电阻率层(26)组成。结果，可以在一些实施例中实现相变材料(18)的更均匀的加热和在一些情况下达到更佳的接触。

Description

垂直上升孔相变存储器
背景技术
本发明通常涉及电子存储器，且特别是涉及使用相变材料的电子存储器
相变材料可以呈现至少两种不同状态。这些状态可以称为非晶或结晶状态。可以选择性地启动这些状态之间的转变。可以区分这些状态，因为非晶状态通常呈现出比结晶状态更高的电阻率。非晶状态包括一个更无序的原子结构。通常可以采用任何相变材料。然而，在些实施例中，薄膜硫族化物合金材料可能特别合适。
相变是可逆的。因此，响应于温度的变化，存储器可以从非晶变成结晶状态并且可以再回到非晶状态，反之亦然。实际上，可以将各存储器单元认作可编程电阻器，它在较高和较低的电阻状态之间可逆地变化。
现有的相变存储器可能会经历相变材料的无效加热。因此，需要更好的方式来加热相变材料。
附图简要说明
图1为根据本发明一个实施例的相变存储器的一部分的放大剖视图；和，
图2为使用根据本发明一个实施例的相变存储器的系统的示意图。
详细说明
参见图1，相变存储器10可包括多个相变存储单元12，该相变存储单元12包括在相邻位线14上的相邻单元12a和12b。各位线14定位于屏蔽材料16上。屏蔽材料16可延伸至相变材料18(在本发明的一个实施例中可以是硫族化物材料)顶部的小孔46中。
相变存储器材料的例子包括，但不限于，碲-锗-锑(TexGeySbz)材料或GeSbTe合金类的硫族化物元素成分，虽然本发明的范围不仅限于这些。另选地，可以使用另一相变材料，该材料的电性能(例如：电阻、电容等)可以通过应用诸如光、热或电流之类的能量来改变。
在一个实施例中，小孔46可以由侧壁隔离物22确定。小孔46和侧壁隔离物22可以由在介电或绝缘材料20中形成的开口来确定。材料20可以是氧化物、氮化物或其它绝缘材料。
在小孔46下是一对下电极，包括了相对较高电阻率的下电极24和相对较低电阻率的下电极26。较高电阻率的电极24可以响应对相变材料46加热相邻部分的原因，且因此可具有较大的垂直深度。较低电阻率的下电极材料26具有在较高电阻率的下电极24的整个宽度有效分配电流。
在一个实施例中，电流从较低电阻率的下电极26接收并通过基底衬底导体30。在本发明的一个实施例中，导体30可以是杯形并可以用围绕着基底衬底导体30的绝缘体28填充。
氮化物层32可以贯穿基底衬底导体30穿透。氮化物层32可以位于在包括p+区域38的半导体基片上所形成的绝缘层35上。
p+区域38可以与硅化物接触区34相邻。p+区域38下方是一个n型硅层40。n+区域36可以位于相邻位线14之间。在本发明的一个实施例中，在n型硅40下面是p型外延(EPI)硅层42和p++型硅基片44。
较高电阻率下电极24的电阻率可以在1-500mohm-cm的范围内，最好是30-100mohm-cm的范围内。在本发明的一个实施例中，较低电阻率下电极26的电阻率可以在0.01-1.0mohm-cm的范围内，最好是0.05-0.15mohm-cm的范围内。可以用作电极24和26的电阻材料的例子包括氮化硅和氮化钽。
如图2所示，基于处理器的系统可以包括诸如通用或数字信号处理器之类的处理器50。处理器50可以例如通过总线52与存储器10相耦合。在一些实施例中还可以设置无线接口54。该无线接口54可包括例如收发器或天线。
虽然参照有限几个实施例描述了本发明，但本技术领域的技术人员会理解对其的各种修改和变形。旨在只要在本发明的精神和范围内的各种修改和变形都由所附的权利要求所覆盖。

Claims (14)

1.一种相变存储器，其特征在于，包括：
绝缘材料；
在所述绝缘材料上的相变材料；和
与所述相变材料相耦合的下电极，所述下电极包括在一层较低电阻率层上的一层较高电阻率层。
2.如权利要求1所述的存储器，其特征在于，所述较高电阻率层与所述相变材料接触。
3.如权利要求2所述的存储器，其特征在于，所述较低电阻率层比所述较高电阻率层窄。
4.如权利要求3所述的存储器，其特征在于，包括一个与所述较低电阻率层相接触的杯形导体。
5.如权利要求4所述的存储器，其特征在于，包括一个在所述相变材料和所述较低电阻率层之间的绝缘体和一个在所述绝缘体中形成的小孔。
6.一种方法，其特征在于，包括：
形成一个具有第一层和第二层的下电极，所述第二层具有比第一层高的电阻率；和
在所述第二层上形成一相变材料。
7.如权利要求6所述的方法，其特征在于，包括将所述较低电阻率层与一导体接触。
8.如权利要求7所述的方法，其特征在于，包括在所述下电极上形成一个绝缘体并在所述绝缘体上形成一个小孔。
9.如权利要求8所述的方法，其特征在于，包括在与所述下电极接触的小孔中形成所述相变材料。
10.如权利要求9所述的方法，其特征在于，包括形成一个比所述小孔宽的下电极。
11.一种相变存储器，其特征在于，包括：
确定一小孔的绝缘层；
在所述小孔中的相变材料；
在与所述相变材料接触的所述小孔下方的下电极，所述下电极包括第一和第二层，所述第一层与所述相变材料相接触且具有比所述第二层高的电阻率。
12.如权利要求11所述的存储器，其特征在于，所述较低电阻率层比所述较高电阻率层薄。
13.如权利要求12所述的存储器，其特征在于，包括一个与所述较低电阻率层相接触的杯形导体。
14.如权利要求11所述的存储器，其特征在于，所述下电极比所述小孔宽。
CN03825591.XA 2002-12-13 2003-04-28 垂直上升孔相变存储器 Expired - Lifetime CN1714461B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/319,179 US7049623B2 (en) 2002-12-13 2002-12-13 Vertical elevated pore phase change memory
US10/319,179 2002-12-13
PCT/US2003/013360 WO2004055915A2 (en) 2002-12-13 2003-04-28 Vertical elevated pore phase change memory

Publications (2)

Publication Number Publication Date
CN1714461A true CN1714461A (zh) 2005-12-28
CN1714461B CN1714461B (zh) 2010-12-08

Family

ID=32506588

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03825591.XA Expired - Lifetime CN1714461B (zh) 2002-12-13 2003-04-28 垂直上升孔相变存储器

Country Status (8)

Country Link
US (2) US7049623B2 (zh)
JP (1) JP4446891B2 (zh)
KR (1) KR100669312B1 (zh)
CN (1) CN1714461B (zh)
AU (1) AU2003225226A1 (zh)
MY (1) MY135245A (zh)
TW (1) TWI286750B (zh)
WO (1) WO2004055915A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100587994C (zh) * 2007-01-07 2010-02-03 国际商业机器公司 存储单元及其制造方法
CN101169970B (zh) * 2006-10-24 2010-06-02 旺宏电子股份有限公司 双稳态电阻式随机存取存储器的操作方法

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60220245D1 (de) * 2002-01-17 2007-07-05 St Microelectronics Srl Integriertes Widerstandselement, Phasenwechsel Speicherelement mit solchem Widerstandselement, und Verfahren zu seiner Herstellung
US7425735B2 (en) 2003-02-24 2008-09-16 Samsung Electronics Co., Ltd. Multi-layer phase-changeable memory devices
US7402851B2 (en) * 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US7115927B2 (en) 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7211819B2 (en) * 2003-08-04 2007-05-01 Intel Corporation Damascene phase change memory
US7943919B2 (en) * 2003-12-10 2011-05-17 International Business Machines Corporation Integrated circuit with upstanding stylus
KR100668823B1 (ko) * 2004-06-30 2007-01-16 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
KR100668824B1 (ko) * 2004-06-30 2007-01-16 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
KR100623181B1 (ko) * 2004-08-23 2006-09-19 삼성전자주식회사 상변화 메모리 장치 및 이의 제조 방법
KR100568543B1 (ko) * 2004-08-31 2006-04-07 삼성전자주식회사 작은 접점을 갖는 상변화 기억 소자의 제조방법
JP2006303294A (ja) * 2005-04-22 2006-11-02 Renesas Technology Corp 相変化型不揮発性メモリ及びその製造方法
US7408240B2 (en) * 2005-05-02 2008-08-05 Infineon Technologies Ag Memory device
US20060255328A1 (en) * 2005-05-12 2006-11-16 Dennison Charles H Using conductive oxidation for phase change memory electrodes
KR100650735B1 (ko) * 2005-05-26 2006-11-27 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
KR100687747B1 (ko) * 2005-07-29 2007-02-27 한국전자통신연구원 상변화 메모리소자 및 그 제조방법
KR100687750B1 (ko) * 2005-09-07 2007-02-27 한국전자통신연구원 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법
JP4860248B2 (ja) * 2005-11-26 2012-01-25 エルピーダメモリ株式会社 相変化メモリ装置および相変化メモリ装置の製造方法
JP4860249B2 (ja) * 2005-11-26 2012-01-25 エルピーダメモリ株式会社 相変化メモリ装置および相変化メモリ装置の製造方法
US8896045B2 (en) * 2006-04-19 2014-11-25 Infineon Technologies Ag Integrated circuit including sidewall spacer
KR100722769B1 (ko) * 2006-05-19 2007-05-30 삼성전자주식회사 상변화 메모리 장치 및 이의 형성 방법
KR100782482B1 (ko) * 2006-05-19 2007-12-05 삼성전자주식회사 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법
US7696077B2 (en) * 2006-07-14 2010-04-13 Micron Technology, Inc. Bottom electrode contacts for semiconductor devices and methods of forming same
JP4437299B2 (ja) 2006-08-25 2010-03-24 エルピーダメモリ株式会社 半導体装置及びその製造方法
US7511984B2 (en) 2006-08-30 2009-03-31 Micron Technology, Inc. Phase change memory
US8003972B2 (en) * 2006-08-30 2011-08-23 Micron Technology, Inc. Bottom electrode geometry for phase change memory
KR100810615B1 (ko) * 2006-09-20 2008-03-06 삼성전자주식회사 고온 상전이 패턴을 구비한 상전이 메모리소자 및 그제조방법
US8067762B2 (en) 2006-11-16 2011-11-29 Macronix International Co., Ltd. Resistance random access memory structure for enhanced retention
US8426967B2 (en) * 2007-01-05 2013-04-23 International Business Machines Corporation Scaled-down phase change memory cell in recessed heater
KR101350979B1 (ko) * 2007-05-11 2014-01-14 삼성전자주식회사 저항성 메모리 소자 및 그 제조 방법
KR100911473B1 (ko) * 2007-06-18 2009-08-11 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
KR100881055B1 (ko) * 2007-06-20 2009-01-30 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
US7863593B2 (en) * 2007-07-20 2011-01-04 Qimonda Ag Integrated circuit including force-filled resistivity changing material
US9018615B2 (en) * 2007-08-03 2015-04-28 Macronix International Co., Ltd. Resistor random access memory structure having a defined small area of electrical contact
US7760546B2 (en) * 2008-02-28 2010-07-20 Qimonda North America Corp. Integrated circuit including an electrode having an outer portion with greater resistivity
JP2009206418A (ja) * 2008-02-29 2009-09-10 Elpida Memory Inc 不揮発性メモリ装置及びその製造方法
JP2009212202A (ja) * 2008-03-03 2009-09-17 Elpida Memory Inc 相変化メモリ装置およびその製造方法
US7848139B2 (en) * 2008-09-18 2010-12-07 Seagate Technology Llc Memory device structures including phase-change storage cells
KR20100084215A (ko) * 2009-01-16 2010-07-26 삼성전자주식회사 베리어 보호막이 있는 실리사이드 하부전극을 갖는 상변화 메모리 소자 및 형성 방법
WO2011146913A2 (en) * 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US8574954B2 (en) 2010-08-31 2013-11-05 Micron Technology, Inc. Phase change memory structures and methods
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
US9112148B2 (en) * 2013-09-30 2015-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with laterally offset BEVA/TEVA
US9178144B1 (en) 2014-04-14 2015-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell with bottom electrode
US9209392B1 (en) 2014-10-14 2015-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell with bottom electrode
US9741930B2 (en) * 2015-03-27 2017-08-22 Intel Corporation Materials and components in phase change memory devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US5534711A (en) * 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US6653733B1 (en) * 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US7173317B1 (en) * 1998-11-09 2007-02-06 Micron Technology, Inc. Electrical and thermal contact for use in semiconductor devices
US6339544B1 (en) * 2000-09-29 2002-01-15 Intel Corporation Method to enhance performance of thermal resistor device
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
US6586761B2 (en) * 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6566700B2 (en) * 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
US6791102B2 (en) * 2002-12-13 2004-09-14 Intel Corporation Phase change memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101169970B (zh) * 2006-10-24 2010-06-02 旺宏电子股份有限公司 双稳态电阻式随机存取存储器的操作方法
CN100587994C (zh) * 2007-01-07 2010-02-03 国际商业机器公司 存储单元及其制造方法
TWI462160B (zh) * 2007-01-07 2014-11-21 Ibm 用於相變化隨機存取記憶體之相同關鍵尺寸的孔洞

Also Published As

Publication number Publication date
US7049623B2 (en) 2006-05-23
WO2004055915A3 (en) 2004-08-26
MY135245A (en) 2008-03-31
US20040115372A1 (en) 2004-06-17
TW200410245A (en) 2004-06-16
WO2004055915A2 (en) 2004-07-01
KR20050085526A (ko) 2005-08-29
AU2003225226A1 (en) 2004-07-09
TWI286750B (en) 2007-09-11
JP4446891B2 (ja) 2010-04-07
JP2006510219A (ja) 2006-03-23
CN1714461B (zh) 2010-12-08
KR100669312B1 (ko) 2007-01-16
US20060054878A1 (en) 2006-03-16
US7364937B2 (en) 2008-04-29

Similar Documents

Publication Publication Date Title
CN1714461B (zh) 垂直上升孔相变存储器
US10522757B2 (en) Dual resistive-material regions for phase change memory devices
US6881603B2 (en) Phase change material memory device
CN101789489B (zh) 相变存储器单元及形成的方法
CN100470871C (zh) 具有低程式化电流的相变记忆体
KR101067969B1 (ko) 자체 정렬 상변화 재료층을 이용한 상변화 메모리 소자와 그 제조 및 이용 방법
CN100442390C (zh) 形成相变存储器
CN100379046C (zh) 相变材料存储器装置和形成方法
US7687830B2 (en) Phase change memory with ovonic threshold switch
KR101490429B1 (ko) 저항 메모리 소자 및 그 형성 방법
US7381611B2 (en) Multilayered phase change memory
US7161167B2 (en) Lateral phase change memory
KR101375434B1 (ko) 칼코게나이드 메모리 액세스 장치의 자기-정렬 성장 방법
CN112585758B (zh) 用于3d pcm的改进的选择器热可靠性的新颖间隙填充和单元结构
CN100502084C (zh) 具有热绝缘层的薄膜相变化单元及其制造方法
EP1710850B1 (en) Lateral phase change memory
CN218004905U (zh) 电子器件和半导体结构
CN101499482A (zh) 非易失性存储器及其制造方法
US20220140233A1 (en) Phase-change memory

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20101208