KR100669312B1 - 수직 상승형 구멍의 상변화 메모리 - Google Patents
수직 상승형 구멍의 상변화 메모리 Download PDFInfo
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- KR100669312B1 KR100669312B1 KR1020057010563A KR20057010563A KR100669312B1 KR 100669312 B1 KR100669312 B1 KR 100669312B1 KR 1020057010563 A KR1020057010563 A KR 1020057010563A KR 20057010563 A KR20057010563 A KR 20057010563A KR 100669312 B1 KR100669312 B1 KR 100669312B1
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- Prior art keywords
- phase change
- layer
- change memory
- lower electrode
- hole
- Prior art date
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- 230000015654 memory Effects 0.000 title claims abstract description 23
- 230000008859 change Effects 0.000 title claims abstract description 20
- 239000011148 porous material Substances 0.000 title claims 2
- 239000012782 phase change material Substances 0.000 claims abstract description 19
- 239000004020 conductor Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Inert Electrodes (AREA)
Abstract
Description
Claims (14)
- 상변화 메모리에 있어서,절연 재료;상기 절연 재료상의 상변화 재료; 및상기 상변화 재료에 결합되며, 저저항층 상의 고저항층을 포함하는 하부 전극- 상기 저저항층은 상기 고저항층보다 더 얇음 -을 포함하는 것을 특징으로 하는 상변화 메모리.
- 제1항에 있어서, 상기 고저항층은 상기 상변화 재료와 접촉하는 것을 특징으로 하는 상변화 메모리.
- 삭제
- 제1항에 있어서, 상기 저저항층과 접촉하는 컵 형상의 도전체를 포함하는 것을 특징으로 하는 상변화 메모리.
- 제4항에 있어서, 상기 상변화 재료층과 상기 하부 전극간의 절연체와, 상기 절연체내에 형성된 구멍(pore)를 포함하는 것을 특징으로 하는 상변화 메모리.
- 제1 층과 제2 층 -상기 제2 층은 상기 제1 층보다 더 높은 저항을 가지고, 상기 제1 층은 상기 제2층보다 얇음- 을 갖는 하부 전극을 형성하는 단계; 및상기 제2 층상에 상변화 재료를 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제6항에 있어서, 상기 더 낮은 저항의 저항층을 도전체와 접촉시키는 단계를 포함하는 것을 특징으로 하는 방법.
- 제7항에 있어서, 상기 하부 전극상에 절연체를 형성하는 단계와 상기 절연체내에 구멍을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제8항에 있어서, 상기 하부 전극과 접촉하는 상기 구멍내에 상기 상변화 재료를 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제9항에 있어서, 상기 구멍보다 더 넓은 하부 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
- 상변화 메모리에 있어서,구멍을 정의하는 절연층;상기 구멍내의 상변화 재료; 및상기 상변화 재료와 접촉하는 상기 구멍 하단의 하부 전극 -상기 하부 전극은 제1 층 및 제2 층을 포함하고, 상기 제1 층은 상기 상변화 재료와 접촉하며 상기 제2층보다 더 높은 저항을 가지고, 상기 제2층은 상기 제1층보다 얇음 -을 포함하는 것을 특징으로 하는 상변화 메모리.
- 삭제
- 제11항에 있어서, 상기 저저항층과 접촉하는 컵 형상의 도전체를 포함하는 것을 특징으로 하는 상변화 메모리.
- 제11항에 있어서, 상기 하부 전극은 상기 구멍보다 더 넓은 것을 특징으로 하는 상변화 메모리.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/319,179 US7049623B2 (en) | 2002-12-13 | 2002-12-13 | Vertical elevated pore phase change memory |
US10/319,179 | 2002-12-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050085526A KR20050085526A (ko) | 2005-08-29 |
KR100669312B1 true KR100669312B1 (ko) | 2007-01-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020057010563A KR100669312B1 (ko) | 2002-12-13 | 2003-04-28 | 수직 상승형 구멍의 상변화 메모리 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7049623B2 (ko) |
JP (1) | JP4446891B2 (ko) |
KR (1) | KR100669312B1 (ko) |
CN (1) | CN1714461B (ko) |
AU (1) | AU2003225226A1 (ko) |
MY (1) | MY135245A (ko) |
TW (1) | TWI286750B (ko) |
WO (1) | WO2004055915A2 (ko) |
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US6791102B2 (en) * | 2002-12-13 | 2004-09-14 | Intel Corporation | Phase change memory |
-
2002
- 2002-12-13 US US10/319,179 patent/US7049623B2/en not_active Expired - Lifetime
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2003
- 2003-04-28 AU AU2003225226A patent/AU2003225226A1/en not_active Abandoned
- 2003-04-28 WO PCT/US2003/013360 patent/WO2004055915A2/en active Application Filing
- 2003-04-28 JP JP2004560263A patent/JP4446891B2/ja not_active Expired - Fee Related
- 2003-04-28 CN CN03825591.XA patent/CN1714461B/zh not_active Expired - Lifetime
- 2003-04-28 KR KR1020057010563A patent/KR100669312B1/ko active IP Right Grant
- 2003-05-09 TW TW092112708A patent/TWI286750B/zh not_active IP Right Cessation
- 2003-05-21 MY MYPI20031877A patent/MY135245A/en unknown
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2005
- 2005-11-10 US US11/270,909 patent/US7364937B2/en not_active Expired - Lifetime
Also Published As
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JP4446891B2 (ja) | 2010-04-07 |
US20060054878A1 (en) | 2006-03-16 |
AU2003225226A1 (en) | 2004-07-09 |
TW200410245A (en) | 2004-06-16 |
MY135245A (en) | 2008-03-31 |
CN1714461B (zh) | 2010-12-08 |
WO2004055915A3 (en) | 2004-08-26 |
TWI286750B (en) | 2007-09-11 |
US20040115372A1 (en) | 2004-06-17 |
CN1714461A (zh) | 2005-12-28 |
WO2004055915A2 (en) | 2004-07-01 |
US7049623B2 (en) | 2006-05-23 |
KR20050085526A (ko) | 2005-08-29 |
JP2006510219A (ja) | 2006-03-23 |
US7364937B2 (en) | 2008-04-29 |
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