JP4437299B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP4437299B2 JP4437299B2 JP2006228736A JP2006228736A JP4437299B2 JP 4437299 B2 JP4437299 B2 JP 4437299B2 JP 2006228736 A JP2006228736 A JP 2006228736A JP 2006228736 A JP2006228736 A JP 2006228736A JP 4437299 B2 JP4437299 B2 JP 4437299B2
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- phase change
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- heater electrode
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- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000011229 interlayer Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 230000015654 memory Effects 0.000 description 52
- 150000004767 nitrides Chemical class 0.000 description 29
- 239000012782 phase change material Substances 0.000 description 10
- 230000020169 heat generation Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005537 GaSeTe Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006913 SnSb Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
Description
2 相変化膜
3 上部電極
4 相変化領域
5 層間絶縁膜
6 下部電極
7 サイドウォール窒化膜
8 コンタクトホール
9 窒化膜
11、12 ヒータ電極膜
13 絶縁膜
14 ヒータ絶縁膜
Claims (14)
- 半導体基板上に形成された絶縁膜と、該絶縁膜に開口され、下部電極を露出させたコンタクトホールと、該コンタクトホールの内壁に形成されたサイドウォール絶縁膜とを有し、該サイドウォール絶縁膜で囲まれた領域内に設けられ、前記下部電極に接触したヒータ電極、相変化領域を含みヒータ電極に接する相変化膜、及び、該相変化膜に前記コンタクトホール内で接する部分を備えた上部電極を有し、前記相変化領域が前記サイドウォール絶縁膜により囲まれた前記コンタクトホール内の領域に形成されるように、構成されたことを特徴とする半導体装置。
- 前記ヒータ電極の上面の位置は、前記サイドウォール絶縁膜の上面の位置より前記相変化膜の膜厚分以上低いことを特徴とする請求項1に記載の半導体装置。
- 前記ヒータ電極の上面に接するように形成された相変化膜の上面位置の一部分は、前記サイドウォール絶縁膜の上面の位置より低いことを特徴とする請求項1に記載の半導体装置。
- 相変化する相変化領域は、前記サイドウォール絶縁膜の上面の位置より低い領域の相変化膜に形成されることを特徴とする請求項1に記載の半導体装置。
- 前記サイドウォール絶縁膜の上面の位置は、前記層間絶縁膜の上面の位置より低いことを特徴とする請求項1に記載の半導体装置。
- 前記ヒータ電極はシリンダ形状であり、そのシリンダ内部に絶縁膜を有することを特徴とする請求項1に記載の半導体装置。
- 前記絶縁膜の上面の位置は、前記ヒータ電極の上面の位置より高く、前記サイドウォール絶縁膜の上面の位置より低いことを特徴とする請求項6に記載の半導体装置。
- 半導体基板上に形成された下部電極を覆うように層間絶縁膜を成膜する工程と、前記下部電極を露出させるように層間絶縁膜に開口されたコンタクトホールの側壁にサイドウォール絶縁膜を形成する工程と、前記サイドウォール絶縁膜の内側のコンタクトホールにヒータ電極膜を形成し、さらに前記ヒータ電極膜をエッチングしヒータ電極を形成する工程と、前記ヒータ電極の上面に接するように相変化膜を形成する工程と、前記相変化膜の上面に上部電極を形成する工程と、を備え、前記相変化領域が前記サイドウォール絶縁膜により囲まれた前記コンタクトホール内の領域に形成されるように、前記ヒータ電極の上面の位置及び前記上部電極と前記相変化膜の接触位置が選択されることを特徴とする半導体装置の製造方法。
- 前記ヒータ電極を形成する工程において、前記ヒータ電極の上面の位置を前記サイドウォール絶縁膜の上面の位置よりも前記相変化膜の膜厚分以上低く形成することを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記サイドウォール絶縁膜を形成する工程において、前記サイドウォール絶縁膜の上面の位置を前記層間絶縁膜の上面の位置より低く形成することを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記ヒータ電極を形成する工程において、前記ヒータ電極膜を形成した後にさらに絶縁膜を形成し、前記絶縁膜と前記ヒータ電極膜とをエッチングすること特徴とする請求項8に記載の半導体装置の製造方法。
- 前記絶縁膜の上面の位置として、前記ヒータ電極の上面の位置より高く、前記サイドウォール絶縁膜の上面の位置より低くなるようにエッチングすることを特徴とする請求項11に記載の半導体装置の製造方法。
- 請求項1において、前記上部電極は前記相変化膜との接触面において前記下部電極方向に凸形状を有することを特徴とする半導体装置。
- 請求項13において、前記上部電極は、前記コンタクトホール内に設けられた先端部を有し、当該先端部は前記凸形状を有していることを特徴とする半導体装置。
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JP2006228736A JP4437299B2 (ja) | 2006-08-25 | 2006-08-25 | 半導体装置及びその製造方法 |
US11/845,120 US7829878B2 (en) | 2006-08-25 | 2007-08-27 | Semiconductor device and manufacture method thereof |
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JP2006228736A JP4437299B2 (ja) | 2006-08-25 | 2006-08-25 | 半導体装置及びその製造方法 |
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JP4437299B2 true JP4437299B2 (ja) | 2010-03-24 |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US7646006B2 (en) * | 2006-03-30 | 2010-01-12 | International Business Machines Corporation | Three-terminal cascade switch for controlling static power consumption in integrated circuits |
US8232175B2 (en) * | 2006-09-14 | 2012-07-31 | Spansion Llc | Damascene metal-insulator-metal (MIM) device with improved scaleability |
JP2009176819A (ja) * | 2008-01-22 | 2009-08-06 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US7888665B2 (en) * | 2008-08-21 | 2011-02-15 | Qimonda Ag | Integrated circuit including memory cell having cup-shaped electrode interface |
US20100051896A1 (en) * | 2008-09-02 | 2010-03-04 | Samsung Electronics Co., Ltd. | Variable resistance memory device using a channel-shaped variable resistance pattern |
KR20100082604A (ko) * | 2009-01-09 | 2010-07-19 | 삼성전자주식회사 | 가변저항 메모리 장치 및 그의 형성 방법 |
US8470635B2 (en) * | 2009-11-30 | 2013-06-25 | Micron Technology, Inc. | Keyhole-free sloped heater for phase change memory |
KR101617381B1 (ko) | 2009-12-21 | 2016-05-02 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그 형성 방법 |
US8017433B2 (en) * | 2010-02-09 | 2011-09-13 | International Business Machines Corporation | Post deposition method for regrowth of crystalline phase change material |
JP2013232480A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体装置およびその製造方法 |
CN103151458B (zh) * | 2013-03-22 | 2015-04-29 | 厦门博佳琴电子科技有限公司 | 一种嵌入式相变化存储器阵列及制造方法 |
US9099637B2 (en) * | 2013-03-28 | 2015-08-04 | Intellectual Discovery Co., Ltd. | Phase change memory and method of fabricating the phase change memory |
CN104518084B (zh) * | 2013-09-29 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
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JPH1027805A (ja) | 1996-07-10 | 1998-01-27 | Sony Corp | 半導体装置の製造方法 |
KR100481866B1 (ko) | 2002-11-01 | 2005-04-11 | 삼성전자주식회사 | 상변환 기억소자 및 그 제조방법 |
US7049623B2 (en) | 2002-12-13 | 2006-05-23 | Ovonyx, Inc. | Vertical elevated pore phase change memory |
US6869883B2 (en) | 2002-12-13 | 2005-03-22 | Ovonyx, Inc. | Forming phase change memories |
KR100979710B1 (ko) | 2003-05-23 | 2010-09-02 | 삼성전자주식회사 | 반도체 메모리 소자 및 제조방법 |
KR100733147B1 (ko) | 2004-02-25 | 2007-06-27 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
TW200620473A (en) | 2004-09-08 | 2006-06-16 | Renesas Tech Corp | Nonvolatile memory device |
US7348590B2 (en) * | 2005-02-10 | 2008-03-25 | Infineon Technologies Ag | Phase change memory cell with high read margin at low power operation |
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US7829878B2 (en) | 2010-11-09 |
JP2008053495A (ja) | 2008-03-06 |
US20080048168A1 (en) | 2008-02-28 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |