CN1714461B - 垂直上升孔相变存储器 - Google Patents

垂直上升孔相变存储器 Download PDF

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Publication number
CN1714461B
CN1714461B CN03825591.XA CN03825591A CN1714461B CN 1714461 B CN1714461 B CN 1714461B CN 03825591 A CN03825591 A CN 03825591A CN 1714461 B CN1714461 B CN 1714461B
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China
Prior art keywords
layer
phase change
resistivity
memory
change material
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Expired - Lifetime
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CN03825591.XA
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English (en)
Chinese (zh)
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CN1714461A (zh
Inventor
T·A·劳里
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Ovonyx Inc
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Ovonyx Inc
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Publication of CN1714461A publication Critical patent/CN1714461A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Inert Electrodes (AREA)
  • Battery Electrode And Active Subsutance (AREA)
CN03825591.XA 2002-12-13 2003-04-28 垂直上升孔相变存储器 Expired - Lifetime CN1714461B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/319,179 US7049623B2 (en) 2002-12-13 2002-12-13 Vertical elevated pore phase change memory
US10/319,179 2002-12-13
PCT/US2003/013360 WO2004055915A2 (en) 2002-12-13 2003-04-28 Vertical elevated pore phase change memory

Publications (2)

Publication Number Publication Date
CN1714461A CN1714461A (zh) 2005-12-28
CN1714461B true CN1714461B (zh) 2010-12-08

Family

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Family Applications (1)

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CN03825591.XA Expired - Lifetime CN1714461B (zh) 2002-12-13 2003-04-28 垂直上升孔相变存储器

Country Status (8)

Country Link
US (2) US7049623B2 (enExample)
JP (1) JP4446891B2 (enExample)
KR (1) KR100669312B1 (enExample)
CN (1) CN1714461B (enExample)
AU (1) AU2003225226A1 (enExample)
MY (1) MY135245A (enExample)
TW (1) TWI286750B (enExample)
WO (1) WO2004055915A2 (enExample)

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US7211819B2 (en) * 2003-08-04 2007-05-01 Intel Corporation Damascene phase change memory
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KR100668824B1 (ko) * 2004-06-30 2007-01-16 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
KR100623181B1 (ko) * 2004-08-23 2006-09-19 삼성전자주식회사 상변화 메모리 장치 및 이의 제조 방법
KR100568543B1 (ko) * 2004-08-31 2006-04-07 삼성전자주식회사 작은 접점을 갖는 상변화 기억 소자의 제조방법
JP2006303294A (ja) * 2005-04-22 2006-11-02 Renesas Technology Corp 相変化型不揮発性メモリ及びその製造方法
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US20060255328A1 (en) * 2005-05-12 2006-11-16 Dennison Charles H Using conductive oxidation for phase change memory electrodes
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KR100687747B1 (ko) * 2005-07-29 2007-02-27 한국전자통신연구원 상변화 메모리소자 및 그 제조방법
KR100687750B1 (ko) * 2005-09-07 2007-02-27 한국전자통신연구원 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법
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JP4860249B2 (ja) * 2005-11-26 2012-01-25 エルピーダメモリ株式会社 相変化メモリ装置および相変化メモリ装置の製造方法
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KR100722769B1 (ko) * 2006-05-19 2007-05-30 삼성전자주식회사 상변화 메모리 장치 및 이의 형성 방법
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JP4437299B2 (ja) 2006-08-25 2010-03-24 エルピーダメモリ株式会社 半導体装置及びその製造方法
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Also Published As

Publication number Publication date
US7364937B2 (en) 2008-04-29
KR20050085526A (ko) 2005-08-29
JP4446891B2 (ja) 2010-04-07
MY135245A (en) 2008-03-31
US20060054878A1 (en) 2006-03-16
TW200410245A (en) 2004-06-16
WO2004055915A3 (en) 2004-08-26
CN1714461A (zh) 2005-12-28
US20040115372A1 (en) 2004-06-17
US7049623B2 (en) 2006-05-23
JP2006510219A (ja) 2006-03-23
AU2003225226A1 (en) 2004-07-09
KR100669312B1 (ko) 2007-01-16
WO2004055915A2 (en) 2004-07-01
TWI286750B (en) 2007-09-11

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