CN1714461B - 垂直上升孔相变存储器 - Google Patents

垂直上升孔相变存储器 Download PDF

Info

Publication number
CN1714461B
CN1714461B CN03825591.XA CN03825591A CN1714461B CN 1714461 B CN1714461 B CN 1714461B CN 03825591 A CN03825591 A CN 03825591A CN 1714461 B CN1714461 B CN 1714461B
Authority
CN
China
Prior art keywords
layer
phase change
resistivity
memory
change material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN03825591.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN1714461A (zh
Inventor
T·A·劳里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovonyx Inc
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of CN1714461A publication Critical patent/CN1714461A/zh
Application granted granted Critical
Publication of CN1714461B publication Critical patent/CN1714461B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Inert Electrodes (AREA)
  • Battery Electrode And Active Subsutance (AREA)
CN03825591.XA 2002-12-13 2003-04-28 垂直上升孔相变存储器 Expired - Lifetime CN1714461B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/319,179 2002-12-13
US10/319,179 US7049623B2 (en) 2002-12-13 2002-12-13 Vertical elevated pore phase change memory
PCT/US2003/013360 WO2004055915A2 (en) 2002-12-13 2003-04-28 Vertical elevated pore phase change memory

Publications (2)

Publication Number Publication Date
CN1714461A CN1714461A (zh) 2005-12-28
CN1714461B true CN1714461B (zh) 2010-12-08

Family

ID=32506588

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03825591.XA Expired - Lifetime CN1714461B (zh) 2002-12-13 2003-04-28 垂直上升孔相变存储器

Country Status (8)

Country Link
US (2) US7049623B2 (enExample)
JP (1) JP4446891B2 (enExample)
KR (1) KR100669312B1 (enExample)
CN (1) CN1714461B (enExample)
AU (1) AU2003225226A1 (enExample)
MY (1) MY135245A (enExample)
TW (1) TWI286750B (enExample)
WO (1) WO2004055915A2 (enExample)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1331675B1 (en) * 2002-01-17 2007-05-23 STMicroelectronics S.r.l. Integrated resistive element, phase-change memory element including said resistive element, and method of manufacture thereof
US7425735B2 (en) 2003-02-24 2008-09-16 Samsung Electronics Co., Ltd. Multi-layer phase-changeable memory devices
US7115927B2 (en) 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7402851B2 (en) * 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US7211819B2 (en) * 2003-08-04 2007-05-01 Intel Corporation Damascene phase change memory
US7943919B2 (en) * 2003-12-10 2011-05-17 International Business Machines Corporation Integrated circuit with upstanding stylus
KR100668823B1 (ko) * 2004-06-30 2007-01-16 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
KR100668824B1 (ko) * 2004-06-30 2007-01-16 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
KR100623181B1 (ko) * 2004-08-23 2006-09-19 삼성전자주식회사 상변화 메모리 장치 및 이의 제조 방법
KR100568543B1 (ko) * 2004-08-31 2006-04-07 삼성전자주식회사 작은 접점을 갖는 상변화 기억 소자의 제조방법
JP2006303294A (ja) * 2005-04-22 2006-11-02 Renesas Technology Corp 相変化型不揮発性メモリ及びその製造方法
US7408240B2 (en) * 2005-05-02 2008-08-05 Infineon Technologies Ag Memory device
US20060255328A1 (en) * 2005-05-12 2006-11-16 Dennison Charles H Using conductive oxidation for phase change memory electrodes
KR100650735B1 (ko) * 2005-05-26 2006-11-27 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
KR100687747B1 (ko) * 2005-07-29 2007-02-27 한국전자통신연구원 상변화 메모리소자 및 그 제조방법
KR100687750B1 (ko) * 2005-09-07 2007-02-27 한국전자통신연구원 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법
JP4860249B2 (ja) * 2005-11-26 2012-01-25 エルピーダメモリ株式会社 相変化メモリ装置および相変化メモリ装置の製造方法
JP4860248B2 (ja) * 2005-11-26 2012-01-25 エルピーダメモリ株式会社 相変化メモリ装置および相変化メモリ装置の製造方法
CN100524876C (zh) * 2006-01-09 2009-08-05 财团法人工业技术研究院 相变化存储元件及其制造方法
US8896045B2 (en) * 2006-04-19 2014-11-25 Infineon Technologies Ag Integrated circuit including sidewall spacer
US8129706B2 (en) * 2006-05-05 2012-03-06 Macronix International Co., Ltd. Structures and methods of a bistable resistive random access memory
US7608848B2 (en) * 2006-05-09 2009-10-27 Macronix International Co., Ltd. Bridge resistance random access memory device with a singular contact structure
KR100782482B1 (ko) * 2006-05-19 2007-12-05 삼성전자주식회사 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법
KR100722769B1 (ko) * 2006-05-19 2007-05-30 삼성전자주식회사 상변화 메모리 장치 및 이의 형성 방법
US7696077B2 (en) * 2006-07-14 2010-04-13 Micron Technology, Inc. Bottom electrode contacts for semiconductor devices and methods of forming same
TWI328873B (en) * 2006-08-22 2010-08-11 Macronix Int Co Ltd Thin film fuse phase change cell with thermal isolation layer and manufacturing method
JP4437299B2 (ja) 2006-08-25 2010-03-24 エルピーダメモリ株式会社 半導体装置及びその製造方法
US7511984B2 (en) * 2006-08-30 2009-03-31 Micron Technology, Inc. Phase change memory
US8003972B2 (en) 2006-08-30 2011-08-23 Micron Technology, Inc. Bottom electrode geometry for phase change memory
KR100810615B1 (ko) * 2006-09-20 2008-03-06 삼성전자주식회사 고온 상전이 패턴을 구비한 상전이 메모리소자 및 그제조방법
US7388771B2 (en) * 2006-10-24 2008-06-17 Macronix International Co., Ltd. Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
US8067762B2 (en) * 2006-11-16 2011-11-29 Macronix International Co., Ltd. Resistance random access memory structure for enhanced retention
US7473576B2 (en) * 2006-12-06 2009-01-06 Macronix International Co., Ltd. Method for making a self-converged void and bottom electrode for memory cell
US8426967B2 (en) * 2007-01-05 2013-04-23 International Business Machines Corporation Scaled-down phase change memory cell in recessed heater
US20080164453A1 (en) * 2007-01-07 2008-07-10 Breitwisch Matthew J Uniform critical dimension size pore for pcram application
KR101350979B1 (ko) * 2007-05-11 2014-01-14 삼성전자주식회사 저항성 메모리 소자 및 그 제조 방법
KR100911473B1 (ko) * 2007-06-18 2009-08-11 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
KR100881055B1 (ko) * 2007-06-20 2009-01-30 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
US7863593B2 (en) * 2007-07-20 2011-01-04 Qimonda Ag Integrated circuit including force-filled resistivity changing material
US9018615B2 (en) * 2007-08-03 2015-04-28 Macronix International Co., Ltd. Resistor random access memory structure having a defined small area of electrical contact
US7760546B2 (en) * 2008-02-28 2010-07-20 Qimonda North America Corp. Integrated circuit including an electrode having an outer portion with greater resistivity
JP2009206418A (ja) * 2008-02-29 2009-09-10 Elpida Memory Inc 不揮発性メモリ装置及びその製造方法
JP2009212202A (ja) * 2008-03-03 2009-09-17 Elpida Memory Inc 相変化メモリ装置およびその製造方法
US7848139B2 (en) * 2008-09-18 2010-12-07 Seagate Technology Llc Memory device structures including phase-change storage cells
KR20100084215A (ko) * 2009-01-16 2010-07-26 삼성전자주식회사 베리어 보호막이 있는 실리사이드 하부전극을 갖는 상변화 메모리 소자 및 형성 방법
WO2011146913A2 (en) * 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US8574954B2 (en) 2010-08-31 2013-11-05 Micron Technology, Inc. Phase change memory structures and methods
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
US9112148B2 (en) 2013-09-30 2015-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with laterally offset BEVA/TEVA
US9178144B1 (en) 2014-04-14 2015-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell with bottom electrode
US9209392B1 (en) 2014-10-14 2015-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell with bottom electrode
US9741930B2 (en) * 2015-03-27 2017-08-22 Intel Corporation Materials and components in phase change memory devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534711A (en) * 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US7173317B1 (en) * 1998-11-09 2007-02-06 Micron Technology, Inc. Electrical and thermal contact for use in semiconductor devices
CN1210819C (zh) 1999-03-25 2005-07-13 能源变换设备有限公司 带有改进的接触点的电可编程存储器元件
US6339544B1 (en) * 2000-09-29 2002-01-15 Intel Corporation Method to enhance performance of thermal resistor device
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
US6586761B2 (en) * 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6566700B2 (en) * 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
US6791102B2 (en) * 2002-12-13 2004-09-14 Intel Corporation Phase change memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5920788A (en) * 1995-06-07 1999-07-06 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes

Also Published As

Publication number Publication date
US20040115372A1 (en) 2004-06-17
KR100669312B1 (ko) 2007-01-16
US7364937B2 (en) 2008-04-29
WO2004055915A3 (en) 2004-08-26
US7049623B2 (en) 2006-05-23
JP2006510219A (ja) 2006-03-23
TW200410245A (en) 2004-06-16
KR20050085526A (ko) 2005-08-29
AU2003225226A1 (en) 2004-07-09
MY135245A (en) 2008-03-31
WO2004055915A2 (en) 2004-07-01
JP4446891B2 (ja) 2010-04-07
TWI286750B (en) 2007-09-11
US20060054878A1 (en) 2006-03-16
CN1714461A (zh) 2005-12-28

Similar Documents

Publication Publication Date Title
CN1714461A (zh) 垂直上升孔相变存储器
CN100470666C (zh) 相变存储器及其制造方法
US7161167B2 (en) Lateral phase change memory
KR101067969B1 (ko) 자체 정렬 상변화 재료층을 이용한 상변화 메모리 소자와 그 제조 및 이용 방법
US8377741B2 (en) Self-heating phase change memory cell architecture
US6881603B2 (en) Phase change material memory device
US7381611B2 (en) Multilayered phase change memory
KR101051520B1 (ko) 저 전력 소비 상 변화 메모리 및 그 형성 방법
KR101486984B1 (ko) 가변 저항 메모리 소자 및 그 형성방법
CN100379046C (zh) 相变材料存储器装置和形成方法
US8476612B2 (en) Method for forming a lateral phase change memory element
TW200913154A (en) Variable resistance memory device having reduced bottom contact area and method of forming the same
CN104995733A (zh) 存储器单元阵列及形成存储器单元阵列的方法
US9343676B2 (en) Heating phase change material
US20060163553A1 (en) Phase change memory and fabricating method thereof
GB2515567A (en) Phase-Change memory cells
TW200929526A (en) Non-volatile memory and fabricating method thereof
US8431922B2 (en) Lateral phase change memory
US20060098524A1 (en) Forming planarized semiconductor structures
US20110079763A1 (en) Phase change devices

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20101208