JP4260617B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4260617B2
JP4260617B2 JP2003426943A JP2003426943A JP4260617B2 JP 4260617 B2 JP4260617 B2 JP 4260617B2 JP 2003426943 A JP2003426943 A JP 2003426943A JP 2003426943 A JP2003426943 A JP 2003426943A JP 4260617 B2 JP4260617 B2 JP 4260617B2
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Prior art keywords
semiconductor chip
semiconductor
back surface
chip
manufacturing
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JP2003426943A
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English (en)
Japanese (ja)
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JP2005191053A5 (enExample
JP2005191053A (ja
Inventor
順弘 木下
順平 紺野
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2003426943A priority Critical patent/JP4260617B2/ja
Priority to TW093135102A priority patent/TWI381459B/zh
Priority to KR1020040106950A priority patent/KR20050065318A/ko
Priority to US11/017,077 priority patent/US20050140023A1/en
Priority to CNB2004101048860A priority patent/CN100477208C/zh
Publication of JP2005191053A publication Critical patent/JP2005191053A/ja
Priority to US11/648,646 priority patent/US7598121B2/en
Publication of JP2005191053A5 publication Critical patent/JP2005191053A5/ja
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Publication of JP4260617B2 publication Critical patent/JP4260617B2/ja
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2003426943A 2003-12-24 2003-12-24 半導体装置の製造方法 Expired - Fee Related JP4260617B2 (ja)

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TW093135102A TWI381459B (zh) 2003-12-24 2004-11-16 Semiconductor device and manufacturing method thereof
KR1020040106950A KR20050065318A (ko) 2003-12-24 2004-12-16 반도체장치 및 그 제조 방법
US11/017,077 US20050140023A1 (en) 2003-12-24 2004-12-21 Method of manufacturing a semiconductor device
CNB2004101048860A CN100477208C (zh) 2003-12-24 2004-12-24 制造半导体器件的方法
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JP4538830B2 (ja) * 2004-03-30 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置
JP2006261485A (ja) * 2005-03-18 2006-09-28 Renesas Technology Corp 半導体装置およびその製造方法
KR20070095504A (ko) * 2005-10-14 2007-10-01 인티그런트 테크놀로지즈(주) 적층형 집적회로 칩 및 패키지.
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JP2012221989A (ja) 2011-04-04 2012-11-12 Elpida Memory Inc 半導体装置製造装置、及び半導体装置の製造方法
JP6100489B2 (ja) 2012-08-31 2017-03-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101894125B1 (ko) 2012-09-14 2018-08-31 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치의 제조 방법
CN103107108B (zh) * 2012-12-12 2015-04-22 贵州振华风光半导体有限公司 改善厚膜混合集成电路同质键合系统质量一致性的方法
KR102066015B1 (ko) 2013-08-13 2020-01-14 삼성전자주식회사 반도체 패키지 및 이의 제조방법
JP2017059707A (ja) * 2015-09-17 2017-03-23 富士通株式会社 積層チップ、積層チップを搭載する基板、及び積層チップの製造方法
JP6639915B2 (ja) * 2016-01-08 2020-02-05 東レエンジニアリング株式会社 半導体実装装置および半導体実装方法
KR102592226B1 (ko) * 2018-07-17 2023-10-23 삼성전자주식회사 반도체 패키지 본딩헤드 및 본딩방법
JP2020136642A (ja) * 2019-02-26 2020-08-31 京セラ株式会社 半導体チップ、圧電デバイス及び電子機器
CN114496824B (zh) * 2020-10-23 2024-08-23 长鑫存储技术有限公司 裸片取出方法

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