JP4097417B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4097417B2
JP4097417B2 JP2001329620A JP2001329620A JP4097417B2 JP 4097417 B2 JP4097417 B2 JP 4097417B2 JP 2001329620 A JP2001329620 A JP 2001329620A JP 2001329620 A JP2001329620 A JP 2001329620A JP 4097417 B2 JP4097417 B2 JP 4097417B2
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JP
Japan
Prior art keywords
region
semiconductor
schottky
cell
semiconductor device
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Expired - Lifetime
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JP2001329620A
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English (en)
Japanese (ja)
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JP2003133557A5 (OSRAM
JP2003133557A (ja
Inventor
伸幸 白井
伸悌 松浦
芳人 中沢
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Renesas Technology Corp
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Renesas Technology Corp
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Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001329620A priority Critical patent/JP4097417B2/ja
Priority to US10/269,970 priority patent/US6806548B2/en
Publication of JP2003133557A publication Critical patent/JP2003133557A/ja
Priority to US10/948,305 priority patent/US7078782B2/en
Publication of JP2003133557A5 publication Critical patent/JP2003133557A5/ja
Priority to US11/482,765 priority patent/US7518208B2/en
Application granted granted Critical
Publication of JP4097417B2 publication Critical patent/JP4097417B2/ja
Priority to US12/404,285 priority patent/US7829946B2/en
Priority to US12/901,929 priority patent/US8008714B2/en
Priority to US13/214,131 priority patent/US8193578B2/en
Priority to US13/467,536 priority patent/US8426910B2/en
Priority to US13/844,950 priority patent/US8928071B2/en
Priority to US14/528,177 priority patent/US9099550B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/655—Lateral DMOS [LDMOS] FETs having edge termination structures
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
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    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
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    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
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    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/156—LDMOS having built-in components the built-in components being Schottky barrier diodes
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
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    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/926—Multiple bond pads having different sizes

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001329620A 2001-10-26 2001-10-26 半導体装置 Expired - Lifetime JP4097417B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2001329620A JP4097417B2 (ja) 2001-10-26 2001-10-26 半導体装置
US10/269,970 US6806548B2 (en) 2001-10-26 2002-10-15 Semiconductor device
US10/948,305 US7078782B2 (en) 2001-10-26 2004-09-24 Semiconductor device
US11/482,765 US7518208B2 (en) 2001-10-26 2006-07-10 Semiconductor device having power transistors and Schottky barrier diode
US12/404,285 US7829946B2 (en) 2001-10-26 2009-03-14 Semiconductor device
US12/901,929 US8008714B2 (en) 2001-10-26 2010-10-11 Semiconductor device including a MOSFET and a Schottky junction
US13/214,131 US8193578B2 (en) 2001-10-26 2011-08-19 Power supply circuit having a semiconductor device including a MOSFET and a Schottky junction
US13/467,536 US8426910B2 (en) 2001-10-26 2012-05-09 Semiconductor device for use in a power supply circuit and having a power MOSFET and Schottky barrier diode
US13/844,950 US8928071B2 (en) 2001-10-26 2013-03-16 Semiconductor device including a MOSFET and Schottky junction
US14/528,177 US9099550B2 (en) 2001-10-26 2014-10-30 Semiconductor device including a MOSFET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001329620A JP4097417B2 (ja) 2001-10-26 2001-10-26 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008030549A Division JP4964797B2 (ja) 2008-02-12 2008-02-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2003133557A JP2003133557A (ja) 2003-05-09
JP2003133557A5 JP2003133557A5 (OSRAM) 2005-09-15
JP4097417B2 true JP4097417B2 (ja) 2008-06-11

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Application Number Title Priority Date Filing Date
JP2001329620A Expired - Lifetime JP4097417B2 (ja) 2001-10-26 2001-10-26 半導体装置

Country Status (2)

Country Link
US (9) US6806548B2 (OSRAM)
JP (1) JP4097417B2 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727228U (ja) * 1993-10-19 1995-05-19 鹿島建設株式会社 ケーブルラック

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