JP4055762B2 - 電気光学装置の製造方法 - Google Patents
電気光学装置の製造方法 Download PDFInfo
- Publication number
- JP4055762B2 JP4055762B2 JP2004283612A JP2004283612A JP4055762B2 JP 4055762 B2 JP4055762 B2 JP 4055762B2 JP 2004283612 A JP2004283612 A JP 2004283612A JP 2004283612 A JP2004283612 A JP 2004283612A JP 4055762 B2 JP4055762 B2 JP 4055762B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electro
- optical device
- manufacturing
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 239000000758 substrate Substances 0.000 claims description 479
- 239000000853 adhesive Substances 0.000 claims description 109
- 230000001070 adhesive effect Effects 0.000 claims description 109
- 238000010438 heat treatment Methods 0.000 claims description 46
- 229920001187 thermosetting polymer Polymers 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 33
- 238000001723 curing Methods 0.000 claims description 23
- 238000003825 pressing Methods 0.000 claims description 15
- 238000000016 photochemical curing Methods 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 description 118
- 239000004973 liquid crystal related substance Substances 0.000 description 49
- 230000006837 decompression Effects 0.000 description 13
- 239000000428 dust Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003522 acrylic cement Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Description
Claims (13)
- チップ状の複数の第1の基板に切り出すことができ、該各第1の基板に対してチップ状に形成された第2の基板がそれぞれ貼り合わされている大型基板から電気光学装置を製造する方法において、
上記大型基板の、上記第2の基板が貼り合わされている面と反対側の面の略全体に第3の基板を貼付する第3の基板貼付工程と、
上記第2の基板の、上記大型基板が貼り合わされている面と反対側の面に、該第2の基板と略同一形状の第4の基板を貼付する第4の基板貼付工程と、
上記大型基板と上記第3の基板とを共に上記第1の基板単位で切り出す切り出し工程と
を備えることを特徴とする電気光学装置の製造方法。 - チップ状の複数の第1の基板に切り出すことができ、該各第1の基板に対してチップ状に形成された第2の基板がそれぞれ貼り合わされている大型基板から電気光学装置を製造する方法において、
上記第2の基板の、上記大型基板が貼り合わされている面と反対側の面に、該第2の基板と略同一形状の第4の基板を貼付する第4の基板貼付工程と、
上記大型基板の、上記第2の基板が貼り合わされている面と反対側の面の略全体に第3の基板を貼付する第3の基板貼付工程と、
上記大型基板と第3の基板とを共に上記第1の基板単位で切り出す切り出し工程と
を備えることを特徴とする電気光学装置の製造方法。 - 上記第3の基板貼付工程は、上記第3の基板上に熱硬化型接着剤を滴下した後、該第3の基板上に上記大型基板を載置し、次いで該大型基板全体を上記第3の基板方向へ押圧することを特徴とする請求項1又は2に記載の電気光学装置の製造方法。
- 上記第3の基板貼付工程は、上記第3の基板上に熱硬化型接着剤を滴下し、次いで減圧雰囲気内で該第3の基板上に上記大型基板を載置した後、該大型基板全体を上記第3の基板方向へ設定時間だけ押圧し、該設定時間経過後、高温雰囲気内で上記熱硬化型接着剤を硬化させることを特徴とする請求項1又は2に記載の電気光学装置の製造方法。
- 上記第3の基板貼付工程では、上記第3の基板の外周に仮止め用の光硬化型接着剤を塗布し、上記設定時間経過後、該光硬化型接着剤に光を照射して硬化させて、その後高温雰囲気内で上記熱硬化型接着剤を硬化させることを特徴とする請求項4記載の電気光学装置の製造方法。
- 上記第4の基板貼付工程は、上記大型基板を設定温度に加熱された加熱手段に載置し、上記第2の基板上に熱硬化型接着剤を滴下した後、該第2の基板上に上記第4の基板を載置し、次いで該第4の基板を上記第2の基板方向へ押圧することを特徴とする請求項1又は2に記載の電気光学装置の製造方法。
- 上記第4の基板貼付工程は、上記大型基板を設定温度に加熱されている加熱手段に載置し、上記第2の基板上に熱硬化型接着剤を滴下した後、上方から所定温度に加熱された加熱ヘッドに保持されている上記第4の基板を下降させて上記第2の基板上に載置し、次いで該第4の基板を上記第2の基板方向へ設定時間だけ押圧することを特徴とする請求項1又は2に記載の電気光学装置の製造方法。
- 上記第3の基板貼付工程は、上記第3の基板上に光硬化型接着剤を滴下した後、該第3の基板上に上記大型基板を載置し、次いで該大型基板全体を上記第3の基板方向へ押圧し、その後該光硬化型接着剤に光を照射して硬化させることを特徴とする請求項1又は2に記載の電気光学装置の製造方法。
- 上記大型基板全体を上記第3の基板方向へ押圧する過程では、該両基板の少なくとも一方が加熱されていることを特徴とする請求項8記載の電気光学装置の製造方法。
- 上記光硬化型接着剤を硬化させる光は上記第3の基板の上記大型基板が貼り合わされている面と反対側の面から照射されることを特徴とする請求項9記載の電気光学装置の製造方法。
- 上記第4の基板貼付工程は、上記第2の基板上に光硬化型接着剤を滴下した後、該第2の基板上に上記第4の基板を載置し、次いで該第4の基板を上記第2の基板方向へ押圧し、その後該光硬化型接着剤に光を照射して硬化させることを特徴とする請求項1又は2に記載の電気光学装置の製造方法。
- 上記第4の基板を上記第2の基板方向へ押圧する過程では、該第4の基板と上記第2の基板側との少なくとも一方が加熱されていることを特徴とする請求項11記載の電気光学装置の製造方法。
- 上記光硬化型接着剤を硬化させる光は上記第2の基板の上記第4の基板が貼り合わされている面と反対の面側から照射されることを特徴とする請求項12記載の電気光学装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004283612A JP4055762B2 (ja) | 2004-05-25 | 2004-09-29 | 電気光学装置の製造方法 |
US11/131,235 US7491580B2 (en) | 2004-05-25 | 2005-05-18 | Method of manufacturing electro-optical device |
KR1020050042591A KR100676663B1 (ko) | 2004-05-25 | 2005-05-20 | 전기 광학 장치의 제조 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004154635 | 2004-05-25 | ||
JP2004283612A JP4055762B2 (ja) | 2004-05-25 | 2004-09-29 | 電気光学装置の製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007278633A Division JP4301337B2 (ja) | 2004-05-25 | 2007-10-26 | 電気光学装置の製造方法 |
JP2007278634A Division JP4240143B2 (ja) | 2004-05-25 | 2007-10-26 | 電気光学装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006011353A JP2006011353A (ja) | 2006-01-12 |
JP4055762B2 true JP4055762B2 (ja) | 2008-03-05 |
Family
ID=35425871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004283612A Expired - Fee Related JP4055762B2 (ja) | 2004-05-25 | 2004-09-29 | 電気光学装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7491580B2 (ja) |
JP (1) | JP4055762B2 (ja) |
KR (1) | KR100676663B1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5095993B2 (ja) * | 2006-12-28 | 2012-12-12 | 株式会社ジャパンディスプレイイースト | 液晶表示装置,プラズマ表示装置 |
JP2008233593A (ja) * | 2007-03-22 | 2008-10-02 | Seiko Epson Corp | 電気光学装置の製造方法 |
JP5003349B2 (ja) * | 2007-08-23 | 2012-08-15 | セイコーエプソン株式会社 | 電気光学装置の製造方法、電気光学装置の製造装置 |
JP5501623B2 (ja) * | 2008-01-29 | 2014-05-28 | 京セラ株式会社 | 熱電モジュール |
JP2010152268A (ja) * | 2008-12-26 | 2010-07-08 | Seiko Epson Corp | 液晶表示装置及びプロジェクター |
JP5936520B2 (ja) * | 2011-11-02 | 2016-06-22 | シチズンファインデバイス株式会社 | 液晶表示装置の製造方法 |
CN110707186A (zh) * | 2019-10-21 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Led显示面板的制备方法 |
CN112838183A (zh) * | 2021-01-22 | 2021-05-25 | 安徽熙泰智能科技有限公司 | 一种硅基oled微显示器件光学贴合方法 |
CN115167091B (zh) * | 2022-08-05 | 2023-11-24 | 东莞华清光学科技有限公司 | 简易手表玻璃定位固定方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688116A (en) | 1979-12-19 | 1981-07-17 | Casio Comput Co Ltd | Manufacture of electrooptical display cell |
JP3674330B2 (ja) | 1997-09-11 | 2005-07-20 | セイコーエプソン株式会社 | 光変調装置、およびこれを用いた投写型表示装置 |
JPH0548059A (ja) * | 1991-08-09 | 1993-02-26 | Nec Corp | 固体撮像装置の製造方法 |
JPH05291398A (ja) * | 1992-04-08 | 1993-11-05 | Sony Corp | 素子基板及び液晶表示装置の製造方法 |
JPH06148622A (ja) | 1992-11-12 | 1994-05-27 | Sharp Corp | 単板式液晶プロジェクション用液晶表示装置 |
JPH06194637A (ja) | 1992-12-24 | 1994-07-15 | Shinetsu Eng Kk | 液晶表示板用ガラス基板の貼り合せ方法 |
JPH08201747A (ja) | 1995-01-27 | 1996-08-09 | Sintokogio Ltd | 液晶パネルの製造方法およびその装置 |
US5708652A (en) * | 1995-02-28 | 1998-01-13 | Sony Corporation | Multi-layer recording medium and method for producing same |
JPH10123964A (ja) | 1996-08-30 | 1998-05-15 | Sony Corp | 液晶表示装置 |
JPH1090692A (ja) | 1996-09-12 | 1998-04-10 | Sony Corp | 液晶表示装置の製造方法 |
JP3799829B2 (ja) | 1997-09-11 | 2006-07-19 | セイコーエプソン株式会社 | 電気光学装置およびその製造方法並びに投射型表示装置 |
JP2000119029A (ja) | 1998-10-09 | 2000-04-25 | Sintokogio Ltd | ギャップ出しガラス基板の加熱方法及びその装置 |
US6731367B1 (en) | 1998-12-04 | 2004-05-04 | Seiko Epson Corporation | Electro-optical panel, electro-optical panel module, and projection display device |
JP3686560B2 (ja) | 1998-12-04 | 2005-08-24 | セイコーエプソン株式会社 | 電気光学パネル、電気光学パネルモジュール及び投射型表示装置 |
JP3870588B2 (ja) | 1998-12-25 | 2007-01-17 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
JP2000193923A (ja) | 1998-12-28 | 2000-07-14 | Toshiba Corp | 液晶表示素子の製造方法 |
JP3771392B2 (ja) | 1999-03-30 | 2006-04-26 | ローム株式会社 | 液晶表示フィルムの製造方法、およびその液晶表示フィルム |
JP3423897B2 (ja) * | 1999-04-01 | 2003-07-07 | 宮崎沖電気株式会社 | 半導体装置の製造方法 |
JP2001066575A (ja) * | 1999-06-22 | 2001-03-16 | Sony Corp | 液晶表示装置の防塵ガラス接合方法 |
US6476415B1 (en) * | 2000-07-20 | 2002-11-05 | Three-Five Systems, Inc. | Wafer scale processing |
JP2002072176A (ja) | 2000-08-24 | 2002-03-12 | Sony Corp | 液晶表示素子の製造方法 |
JP2003140125A (ja) | 2001-08-23 | 2003-05-14 | Seiko Epson Corp | 投射型表示装置、表示パネル及び防塵ガラス |
JP2002365649A (ja) | 2001-06-07 | 2002-12-18 | Seiko Epson Corp | 液晶装置の製造方法及び製造装置 |
JP2003058065A (ja) | 2001-08-21 | 2003-02-28 | Sharp Corp | 表示装置 |
JP4800524B2 (ja) * | 2001-09-10 | 2011-10-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法、及び、製造装置 |
JP2003337550A (ja) | 2002-05-17 | 2003-11-28 | Toshiba Corp | 表示装置およびその製造方法 |
JP4228603B2 (ja) | 2002-06-19 | 2009-02-25 | セイコーエプソン株式会社 | 光変調装置、光学装置及びプロジェクタ |
JP2004070163A (ja) | 2002-08-08 | 2004-03-04 | Sharp Corp | 表示素子 |
JP4196625B2 (ja) | 2002-09-24 | 2008-12-17 | セイコーエプソン株式会社 | 電気光学装置並びに電子機器及び投射型表示装置 |
JP2004144940A (ja) | 2002-10-23 | 2004-05-20 | Sony Corp | 液晶デバイスおよび液晶デバイスの製造方法 |
US6667543B1 (en) * | 2002-10-29 | 2003-12-23 | Motorola, Inc. | Optical sensor package |
US7960209B2 (en) * | 2004-01-29 | 2011-06-14 | Diodes, Inc. | Semiconductor device assembly process |
JP2005249886A (ja) | 2004-03-01 | 2005-09-15 | Sony Corp | 電気光学表示装置の製造方法及び製造装置 |
-
2004
- 2004-09-29 JP JP2004283612A patent/JP4055762B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-18 US US11/131,235 patent/US7491580B2/en not_active Expired - Fee Related
- 2005-05-20 KR KR1020050042591A patent/KR100676663B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US7491580B2 (en) | 2009-02-17 |
KR20060046126A (ko) | 2006-05-17 |
US20050266596A1 (en) | 2005-12-01 |
KR100676663B1 (ko) | 2007-02-01 |
JP2006011353A (ja) | 2006-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3059360B2 (ja) | 液晶パネルの製造方法および製造用プレス装置 | |
KR100676663B1 (ko) | 전기 광학 장치의 제조 방법 | |
KR100720414B1 (ko) | 액정 표시 장치의 제조 방법 | |
JP2002333848A (ja) | 複合アクティブマトリクス基板、その製造方法、及び電磁波撮像装置 | |
JP2015232656A (ja) | 機器及びその製造方法 | |
JPS59131A (ja) | 液晶表示装置の組立装置 | |
JP2004094195A (ja) | 液晶表示パネルを製作する方法 | |
CN100356241C (zh) | 电光装置的制造方法 | |
JP4301337B2 (ja) | 電気光学装置の製造方法 | |
JP2009015131A (ja) | 表示装置の製造方法及び表示装置 | |
JP4240143B2 (ja) | 電気光学装置の製造方法 | |
JP2007240914A (ja) | 電気光学装置の製造方法、及び電気光学装置の製造装置 | |
JP2009186538A (ja) | 基板の製造方法 | |
JP2003107433A (ja) | 液晶表示装置の製造方法および製造装置 | |
JP2005234309A (ja) | 光学部品の製造方法、光学部品 | |
TW588202B (en) | Curing method and apparatus | |
JP5003349B2 (ja) | 電気光学装置の製造方法、電気光学装置の製造装置 | |
JP2003043501A (ja) | 平面表示素子の製造方法 | |
JP2006208867A (ja) | プロジェクター用液晶パネルの製造方法 | |
JP2007079374A (ja) | 電気光学装置の製造方法 | |
JP2001083304A (ja) | マイクロレンズ基板の製造方法とマイクロレンズ基板及び液晶表示装置の製造方法と液晶表示装置 | |
JP2010054749A (ja) | 液晶表示パネル及びその製造方法 | |
JPH0621150A (ja) | 狭ピッチリードデバイスのボンディング方法 | |
JP2004264514A (ja) | 電気光学装置とその製造方法 | |
JP2005173422A (ja) | 電気光学表示装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20070403 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070822 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070828 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071026 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071120 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071203 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4055762 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101221 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101221 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111221 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111221 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121221 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121221 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131221 Year of fee payment: 6 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |