JP4055053B2 - 化合物薄膜太陽電池およびその製造方法 - Google Patents

化合物薄膜太陽電池およびその製造方法 Download PDF

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Publication number
JP4055053B2
JP4055053B2 JP2002129381A JP2002129381A JP4055053B2 JP 4055053 B2 JP4055053 B2 JP 4055053B2 JP 2002129381 A JP2002129381 A JP 2002129381A JP 2002129381 A JP2002129381 A JP 2002129381A JP 4055053 B2 JP4055053 B2 JP 4055053B2
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aqueous solution
solar cell
buffer layer
layer
ins
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JP2002129381A
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Japanese (ja)
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JP2003282909A5 (enExample
JP2003282909A (ja
Inventor
誠志 青木
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Honda Motor Co Ltd
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Honda Motor Co Ltd
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Priority to JP2002129381A priority Critical patent/JP4055053B2/ja
Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Priority to EP03712838A priority patent/EP1489666B1/en
Priority to US10/509,303 priority patent/US7939745B2/en
Priority to PCT/JP2003/003500 priority patent/WO2003081684A1/ja
Priority to AU2003220984A priority patent/AU2003220984A1/en
Priority to EP10161750A priority patent/EP2216824B1/en
Publication of JP2003282909A publication Critical patent/JP2003282909A/ja
Publication of JP2003282909A5 publication Critical patent/JP2003282909A5/ja
Application granted granted Critical
Publication of JP4055053B2 publication Critical patent/JP4055053B2/ja
Priority to US13/103,659 priority patent/US20110203646A1/en
Priority to US14/192,701 priority patent/US20140224309A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2002129381A 2002-03-26 2002-03-26 化合物薄膜太陽電池およびその製造方法 Expired - Fee Related JP4055053B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002129381A JP4055053B2 (ja) 2002-03-26 2002-03-26 化合物薄膜太陽電池およびその製造方法
US10/509,303 US7939745B2 (en) 2002-03-26 2003-03-24 Compound thin-film solar cell and process for producing the same
PCT/JP2003/003500 WO2003081684A1 (en) 2002-03-26 2003-03-24 Compound thin-film solar cell and process for producing the same
AU2003220984A AU2003220984A1 (en) 2002-03-26 2003-03-24 Compound thin-film solar cell and process for producing the same
EP03712838A EP1489666B1 (en) 2002-03-26 2003-03-24 Process for producing a compound thin-film solar cell
EP10161750A EP2216824B1 (en) 2002-03-26 2003-03-24 Compound thin-film solar cell and process for producing the same
US13/103,659 US20110203646A1 (en) 2002-03-26 2011-05-09 Compound thin-film solar cell and process for producing the same
US14/192,701 US20140224309A1 (en) 2002-03-26 2014-02-27 Compound thin-film solar cell and process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002129381A JP4055053B2 (ja) 2002-03-26 2002-03-26 化合物薄膜太陽電池およびその製造方法

Publications (3)

Publication Number Publication Date
JP2003282909A JP2003282909A (ja) 2003-10-03
JP2003282909A5 JP2003282909A5 (enExample) 2005-06-30
JP4055053B2 true JP4055053B2 (ja) 2008-03-05

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JP2002129381A Expired - Fee Related JP4055053B2 (ja) 2002-03-26 2002-03-26 化合物薄膜太陽電池およびその製造方法

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Country Link
US (3) US7939745B2 (enExample)
EP (2) EP2216824B1 (enExample)
JP (1) JP4055053B2 (enExample)
AU (1) AU2003220984A1 (enExample)
WO (1) WO2003081684A1 (enExample)

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JP2007201304A (ja) * 2006-01-30 2007-08-09 Honda Motor Co Ltd 太陽電池およびその製造方法
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US20070215195A1 (en) * 2006-03-18 2007-09-20 Benyamin Buller Elongated photovoltaic cells in tubular casings
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
CN101421100B (zh) * 2006-04-18 2013-03-27 陶氏康宁公司 用缩合固化的有机硅树脂组合物涂布的金属箔基底
ATE448569T1 (de) * 2006-04-18 2009-11-15 Dow Corning Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür
EP2016625B1 (en) * 2006-04-18 2009-09-02 Dow Corning Corporation Copper indium diselenide-based photovoltaic device and method of preparing the same
US9105776B2 (en) * 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
JP4925724B2 (ja) * 2006-05-25 2012-05-09 本田技研工業株式会社 太陽電池およびその製造方法
JP2007317879A (ja) * 2006-05-25 2007-12-06 Honda Motor Co Ltd カルコパイライト型太陽電池およびその製造方法
WO2008036769A2 (en) 2006-09-19 2008-03-27 Itn Energy Systems, Inc. Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
US8414961B1 (en) * 2006-12-13 2013-04-09 Nanosolar, Inc. Solution deposited transparent conductors
US7825329B2 (en) * 2007-01-03 2010-11-02 Solopower, Inc. Thin film solar cell manufacturing and integration
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US20090215215A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Method and apparatus for manufacturing multi-layered electro-optic devices
US20090211622A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Multi-layered electro-optic devices
US8530262B2 (en) * 2008-02-28 2013-09-10 Nanosolar, Inc. Roll-to-roll non-vacuum deposition of transparent conductive electrodes
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
US10211353B2 (en) * 2008-04-14 2019-02-19 Sunlight Photonics Inc. Aligned bifacial solar modules
CN102017203B (zh) * 2008-05-02 2013-04-10 Lg伊诺特有限公司 发光器件和制造发光器件的方法
US8110428B2 (en) * 2008-11-25 2012-02-07 Sunlight Photonics Inc. Thin-film photovoltaic devices
US8835748B2 (en) * 2009-01-06 2014-09-16 Sunlight Photonics Inc. Multi-junction PV module
US10297707B1 (en) * 2009-02-23 2019-05-21 Tatiana Globus Thin film photovoltaic cell system and method of manufacture
CN102804399A (zh) * 2009-06-16 2012-11-28 Lg伊诺特有限公司 太阳能电池及其制造方法
KR101081194B1 (ko) * 2009-06-16 2011-11-07 엘지이노텍 주식회사 태양전지의 제조장치, 이를 이용한 태양전지의 제조방법
KR101028192B1 (ko) 2009-06-16 2011-04-11 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP2011018857A (ja) * 2009-07-10 2011-01-27 Mitsubishi Heavy Ind Ltd 光電変換装置の製造方法
US20110017289A1 (en) * 2009-07-24 2011-01-27 Electronics And Telecommunications Research Institute Cigs solar cell and method of fabricating the same
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CN101820028A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 多段式硫化镉薄膜沉积方法
CN101840960A (zh) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 多段式硫化镉薄膜沉积方法
CN102782853A (zh) * 2010-03-05 2012-11-14 第一太阳能有限公司 具有分级缓冲层的光伏器件
JP2012054261A (ja) * 2010-08-31 2012-03-15 Kyocera Corp 光電変換装置とその製造方法および光電変換モジュール
JP2012109558A (ja) * 2010-10-29 2012-06-07 Kyocera Corp 光電変換素子および光電変換装置ならびに光電変換素子の製造方法
JP5500059B2 (ja) * 2010-12-07 2014-05-21 株式会社豊田中央研究所 光電素子
JP5488436B2 (ja) * 2010-12-07 2014-05-14 株式会社豊田中央研究所 光電素子
JP5701673B2 (ja) * 2011-05-06 2015-04-15 株式会社東芝 光電変換素子および太陽電池
JP5886622B2 (ja) * 2011-05-30 2016-03-16 京セラ株式会社 化合物半導体膜の製造方法および製造装置
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JP5792008B2 (ja) * 2011-09-14 2015-10-07 本田技研工業株式会社 カルコパイライト型太陽電池の製造方法
KR101326885B1 (ko) 2011-10-17 2013-11-11 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101306529B1 (ko) * 2011-11-21 2013-09-09 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP5258951B2 (ja) * 2011-12-02 2013-08-07 昭和シェル石油株式会社 薄膜太陽電池
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Also Published As

Publication number Publication date
WO2003081684A1 (en) 2003-10-02
EP2216824A2 (en) 2010-08-11
AU2003220984A1 (en) 2003-10-08
US20110203646A1 (en) 2011-08-25
US7939745B2 (en) 2011-05-10
JP2003282909A (ja) 2003-10-03
EP1489666A4 (en) 2008-06-04
EP1489666B1 (en) 2011-10-05
EP2216824B1 (en) 2012-07-18
US20050236032A1 (en) 2005-10-27
EP1489666A1 (en) 2004-12-22
EP2216824A3 (en) 2010-09-22
US20140224309A1 (en) 2014-08-14

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