IN2014KN02865A - - Google Patents
Info
- Publication number
- IN2014KN02865A IN2014KN02865A IN2865KON2014A IN2014KN02865A IN 2014KN02865 A IN2014KN02865 A IN 2014KN02865A IN 2865KON2014 A IN2865KON2014 A IN 2865KON2014A IN 2014KN02865 A IN2014KN02865 A IN 2014KN02865A
- Authority
- IN
- India
- Prior art keywords
- layer
- region
- absorber
- halogen
- adjoining
- Prior art date
Links
- 239000006096 absorbing agent Substances 0.000 abstract 3
- 229910052736 halogen Inorganic materials 0.000 abstract 3
- 150000002367 halogens Chemical class 0.000 abstract 3
- 150000004770 chalcogenides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12172697 | 2012-06-20 | ||
| PCT/EP2013/062715 WO2013189971A1 (de) | 2012-06-20 | 2013-06-19 | Schichtsystem für dünnschichtsolarzellen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014KN02865A true IN2014KN02865A (enExample) | 2015-05-08 |
Family
ID=48692471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN2865KON2014 IN2014KN02865A (enExample) | 2012-06-20 | 2013-06-19 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20150325722A1 (enExample) |
| EP (1) | EP2865012B1 (enExample) |
| JP (1) | JP6092377B2 (enExample) |
| KR (1) | KR101698659B1 (enExample) |
| CN (1) | CN104521006B (enExample) |
| ES (1) | ES2939962T3 (enExample) |
| IN (1) | IN2014KN02865A (enExample) |
| WO (1) | WO2013189971A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160359070A1 (en) * | 2015-06-02 | 2016-12-08 | International Business Machines Corporation | Controllable indium doping for high efficiency czts thin-film solar cells |
| JP7462690B2 (ja) * | 2022-01-28 | 2024-04-05 | キヤノントッキ株式会社 | 成膜装置及び成膜方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4442824C1 (de) | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
| JPH1126790A (ja) * | 1997-07-04 | 1999-01-29 | Yazaki Corp | 半導体薄膜及びその製造方法並びに薄膜太陽電池 |
| DE19956735B4 (de) | 1999-11-25 | 2008-08-21 | Shell Erneuerbare Energien Gmbh | Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung |
| FR2820241B1 (fr) | 2001-01-31 | 2003-09-19 | Saint Gobain | Substrat transparent muni d'une electrode |
| JP4055053B2 (ja) * | 2002-03-26 | 2008-03-05 | 本田技研工業株式会社 | 化合物薄膜太陽電池およびその製造方法 |
| JP2005019839A (ja) * | 2003-06-27 | 2005-01-20 | Shinko Electric Ind Co Ltd | 化合物太陽電池用のｃｂｄ浴及び化合物太陽電池の製造方法 |
| SE0400582D0 (sv) * | 2004-03-05 | 2004-03-05 | Forskarpatent I Uppsala Ab | Method for in-line process control of the CIGS process |
| JP2007201304A (ja) * | 2006-01-30 | 2007-08-09 | Honda Motor Co Ltd | 太陽電池およびその製造方法 |
| DE102008017076B3 (de) * | 2008-04-01 | 2009-09-03 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Chemisches Dampfabscheide-Verfahren unter Atmosphärendruck zur Herstellung einer n-halbleitenden Metallsulfid-Dünnschicht |
| DE102008024230A1 (de) * | 2008-05-19 | 2009-11-26 | Avancis Gmbh & Co. Kg | Schichtsystem für Solarzellen |
| WO2011109228A1 (en) * | 2010-03-05 | 2011-09-09 | First Solar, Inc. | Photovoltaic device with graded buffer layer |
| CN103025910A (zh) * | 2010-07-23 | 2013-04-03 | 第一太阳能有限公司 | 缓冲层形成 |
| CN102437237A (zh) * | 2011-11-29 | 2012-05-02 | 福建钧石能源有限公司 | 黄铜矿型薄膜太阳能电池及其制造方法 |
-
2013
- 2013-06-19 IN IN2865KON2014 patent/IN2014KN02865A/en unknown
- 2013-06-19 WO PCT/EP2013/062715 patent/WO2013189971A1/de not_active Ceased
- 2013-06-19 CN CN201380032810.9A patent/CN104521006B/zh active Active
- 2013-06-19 KR KR1020147035726A patent/KR101698659B1/ko active Active
- 2013-06-19 ES ES13731099T patent/ES2939962T3/es active Active
- 2013-06-19 US US14/409,684 patent/US20150325722A1/en not_active Abandoned
- 2013-06-19 JP JP2015517742A patent/JP6092377B2/ja active Active
- 2013-06-19 EP EP13731099.1A patent/EP2865012B1/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101698659B1 (ko) | 2017-01-20 |
| WO2013189971A1 (de) | 2013-12-27 |
| KR20150013327A (ko) | 2015-02-04 |
| EP2865012B1 (de) | 2023-01-18 |
| JP6092377B2 (ja) | 2017-03-08 |
| CN104521006B (zh) | 2017-05-03 |
| JP2015523728A (ja) | 2015-08-13 |
| EP2865012A1 (de) | 2015-04-29 |
| ES2939962T3 (es) | 2023-04-28 |
| CN104521006A (zh) | 2015-04-15 |
| US20150325722A1 (en) | 2015-11-12 |
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