JP3999138B2 - 半導体装置の製造方法、表示装置の製造方法、および電子機器の製造方法 - Google Patents

半導体装置の製造方法、表示装置の製造方法、および電子機器の製造方法 Download PDF

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JP3999138B2
JP3999138B2 JP2003029697A JP2003029697A JP3999138B2 JP 3999138 B2 JP3999138 B2 JP 3999138B2 JP 2003029697 A JP2003029697 A JP 2003029697A JP 2003029697 A JP2003029697 A JP 2003029697A JP 3999138 B2 JP3999138 B2 JP 3999138B2
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film
substrate
semiconductor
semiconductor film
semiconductor device
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JP2003289046A (ja
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光敏 宮坂
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Seiko Epson Corp
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Seiko Epson Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
JP2003029697A 1995-12-14 2003-02-06 半導体装置の製造方法、表示装置の製造方法、および電子機器の製造方法 Expired - Fee Related JP3999138B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WO95/02568 1995-12-14
PCT/JP1995/002568 WO1997022141A1 (en) 1995-12-14 1995-12-14 Method of manufacturing thin film semiconductor device, and thin film semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9-505012A Division JPWO1997022142A1 (ja) 1995-12-14 1996-08-07 薄膜半導体装置、薄膜半導体装置の製造方法、液晶表示装置、液晶表示装置の製造方法、電子機器、電子機器の製造方法、及び薄膜堆積方法

Publications (2)

Publication Number Publication Date
JP2003289046A JP2003289046A (ja) 2003-10-10
JP3999138B2 true JP3999138B2 (ja) 2007-10-31

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JP2003029697A Expired - Fee Related JP3999138B2 (ja) 1995-12-14 2003-02-06 半導体装置の製造方法、表示装置の製造方法、および電子機器の製造方法

Country Status (6)

Country Link
EP (1) EP0810640A4 (OSRAM)
JP (1) JP3999138B2 (OSRAM)
KR (1) KR100274494B1 (OSRAM)
CN (2) CN1235269C (OSRAM)
TW (1) TW316999B (OSRAM)
WO (2) WO1997022141A1 (OSRAM)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1004886C2 (nl) * 1996-12-23 1998-06-24 Univ Utrecht Halfgeleiderinrichtingen en werkwijze voor het maken daarvan.
JP3350433B2 (ja) 1998-02-16 2002-11-25 シャープ株式会社 プラズマ処理装置
US6294219B1 (en) * 1998-03-03 2001-09-25 Applied Komatsu Technology, Inc. Method of annealing large area glass substrates
US7483001B2 (en) * 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
JP2004061751A (ja) * 2002-07-26 2004-02-26 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
KR100512960B1 (ko) * 2002-09-26 2005-09-07 삼성전자주식회사 플렉서블 ｍｅｍｓ 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 ｍｅｍｓ 무선 마이크로폰
JP4986415B2 (ja) * 2004-06-14 2012-07-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2006030522A1 (ja) * 2004-09-17 2006-03-23 Sharp Kabushiki Kaisha 薄膜半導体装置及びその製造方法
JP5276979B2 (ja) * 2005-06-29 2013-08-28 テル・ソーラー・アクチェンゲゼルシャフト 平坦基板を製造する方法
JP5294862B2 (ja) 2005-09-14 2013-09-18 マトソン テクノロジー、インコーポレイテッド 繰返し可能な熱処理方法および機器
JP5004160B2 (ja) * 2006-12-12 2012-08-22 株式会社日本製鋼所 結晶質半導体膜の製造方法および半導体膜の加熱制御方法ならびに半導体結晶化装置
WO2008131513A1 (en) 2007-05-01 2008-11-06 Mattson Technology Canada, Inc. Irradiance pulse heat-treating methods and apparatus
JP2009081383A (ja) * 2007-09-27 2009-04-16 Hitachi Displays Ltd 薄膜半導体素子を備えた表示装置及び薄膜半導体素子の製造方法
JP5321022B2 (ja) * 2008-12-04 2013-10-23 ソニー株式会社 半導体装置の製造方法および半導体装置
JP5328814B2 (ja) * 2009-01-09 2013-10-30 株式会社アルバック プラズマ処理装置及びプラズマｃｖｄ成膜方法
JP5594741B2 (ja) * 2009-03-05 2014-09-24 株式会社日本製鋼所 結晶質膜の製造方法および結晶質膜製造装置
WO2012048419A1 (en) 2010-10-15 2012-04-19 Mattson Technology Canada, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
CN102061456B (zh) * 2010-10-29 2012-08-22 华南理工大学 一种用于pecvd装置的悬臂式推拉舟系统
JP6204917B2 (ja) * 2011-10-07 2017-09-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ アルゴンガス希釈によるシリコン含有層を堆積するための方法
JP2016070900A (ja) * 2014-10-02 2016-05-09 セイコーエプソン株式会社 磁気計測装置の製造方法、ガスセルの製造方法、磁気計測装置、およびガスセル
JP6960344B2 (ja) * 2018-01-26 2021-11-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182272A (ja) * 1982-04-19 1983-10-25 Seiko Epson Corp 薄膜トランジスタ
JPS60140815A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd アモルフアス・シリコン膜の製造方法
JPS61231767A (ja) * 1985-04-08 1986-10-16 Seiko Epson Corp アクテイブマトリクス基板の製造方法
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
JPS63233564A (ja) * 1987-03-23 1988-09-29 Canon Inc 接合型トランジスタの製造法
JPH0284716A (ja) * 1987-03-25 1990-03-26 Nippon Soken Inc 半導体素子とその製造方法
JPH0652728B2 (ja) * 1987-07-21 1994-07-06 日電アネルバ株式会社 減圧ｃｖｄ装置における基板加熱方法
JPH02181974A (ja) * 1989-01-09 1990-07-16 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH04120277A (ja) * 1990-09-10 1992-04-21 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置
US5135886A (en) * 1990-12-06 1992-08-04 At&T Bell Laboratories Integrated circuit fabrication utilizing amorphous layers
JPH04287314A (ja) * 1991-03-15 1992-10-12 Toyobo Co Ltd 水素化アモルファスシリコン積層体とその製法
JPH04313273A (ja) * 1991-04-10 1992-11-05 Ricoh Co Ltd マイクロクリスタルシリコン薄膜半導体装置及びそれを用いた液晶表示装置
JP2880322B2 (ja) * 1991-05-24 1999-04-05 キヤノン株式会社 堆積膜の形成方法
JPH0562917A (ja) * 1991-09-04 1993-03-12 Canon Inc アモルフアスシリコン薄膜の製造法
EP0543759A3 (en) * 1991-11-20 1993-10-06 International Business Machines Corporation A poly-emitter structure with improved interface control
US5352636A (en) * 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
JPH05235039A (ja) * 1992-02-19 1993-09-10 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JP3162781B2 (ja) * 1992-03-04 2001-05-08 三洋電機株式会社 半導体薄膜の形成方法及びこの膜の形成装置
JP3237788B2 (ja) * 1992-09-16 2001-12-10 キヤノン株式会社 非晶質シリコン薄膜の製造方法
US5582880A (en) * 1992-03-27 1996-12-10 Canon Kabushiki Kaisha Method of manufacturing non-single crystal film and non-single crystal semiconductor device
JPH0677251A (ja) * 1992-08-26 1994-03-18 Sharp Corp 薄膜トランジスタの製造方法
JPH06244419A (ja) * 1993-02-16 1994-09-02 Casio Comput Co Ltd 薄膜トランジスタ
KR100250020B1 (ko) * 1993-03-02 2000-03-15 가네꼬 히사시 반도체 소자용 다결정 실리콘 박막 형성 방법(method of forming polycrystalline silicon thin films for semiconductor devices)
US5318801A (en) * 1993-05-18 1994-06-07 United States Of America As Represented By The Secretary Of The Navy Substrate temperature control apparatus and technique for CVD reactors
JPH07142405A (ja) * 1993-11-19 1995-06-02 Sanyo Electric Co Ltd 多結晶半導体膜およびその成膜方法
JPH07147239A (ja) * 1993-11-25 1995-06-06 Nec Corp 減圧成膜装置

Also Published As

Publication number Publication date
EP0810640A1 (en) 1997-12-03
WO1997022142A1 (en) 1997-06-19
CN1235269C (zh) 2006-01-04
WO1997022141A1 (en) 1997-06-19
TW316999B (OSRAM) 1997-10-01
JP2003289046A (ja) 2003-10-10
KR100274494B1 (ko) 2001-01-15
CN1173948A (zh) 1998-02-18
EP0810640A4 (en) 1999-06-16
CN1097300C (zh) 2002-12-25
CN1434483A (zh) 2003-08-06
KR970706616A (ko) 1997-11-03

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