KR100512960B1 - 플렉서블 mems 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 mems 무선 마이크로폰 - Google Patents
플렉서블 mems 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 mems 무선 마이크로폰 Download PDFInfo
- Publication number
- KR100512960B1 KR100512960B1 KR10-2002-0058313A KR20020058313A KR100512960B1 KR 100512960 B1 KR100512960 B1 KR 100512960B1 KR 20020058313 A KR20020058313 A KR 20020058313A KR 100512960 B1 KR100512960 B1 KR 100512960B1
- Authority
- KR
- South Korea
- Prior art keywords
- flexible
- layer
- electrode layer
- mems transducer
- substrate
- Prior art date
Links
- 230000009975 flexible effect Effects 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 239000012528 membrane Substances 0.000 claims abstract description 29
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 27
- 229920000642 polymer Polymers 0.000 claims abstract description 27
- 238000000059 patterning Methods 0.000 claims abstract description 20
- 229920005570 flexible polymer Polymers 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 172
- 239000011241 protective layer Substances 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 16
- 229920001721 polyimide Polymers 0.000 claims description 13
- 239000002861 polymer material Substances 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229920001940 conductive polymer Polymers 0.000 claims description 7
- 239000004677 Nylon Substances 0.000 claims description 5
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 229920001778 nylon Polymers 0.000 claims description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 5
- 229920002396 Polyurea Polymers 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000011149 active material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000036555 skin type Effects 0.000 description 7
- 238000005452 bending Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005459 micromachining Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZXQYGBMAQZUVMI-GCMPRSNUSA-N gamma-cyhalothrin Chemical compound CC1(C)[C@@H](\C=C(/Cl)C(F)(F)F)[C@H]1C(=O)O[C@H](C#N)C1=CC=CC(OC=2C=CC=CC=2)=C1 ZXQYGBMAQZUVMI-GCMPRSNUSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/098—Forming organic materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
- H10N30/2042—Cantilevers, i.e. having one fixed end
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/032—Bimorph and unimorph actuators, e.g. piezo and thermo
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
- H04R1/32—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only
- H04R1/40—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by combining a number of identical transducers
- H04R1/406—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by combining a number of identical transducers microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
- H04R17/02—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2420/00—Details of connection covered by H04R, not provided for in its groups
- H04R2420/07—Applications of wireless loudspeakers or wireless microphones
Abstract
Description
Claims (41)
- 플렉서블한 재질의 기판;상기 기판 상에 증착되며, 일 부분이 부상되어 상기 기판 표면과 소정 거리 이격된 멤브레인층;상기 멤브레인층 위에 도전물질을 증착하여 형성되는 하부전극층;상기 하부전극층 위에 압전 폴리머를 증착하여 형성되는 활성층;상기 활성층 위에 도전물질을 증착하여 형성되는 상부전극층;상기 하부전극층과 전기적으로 접속되는 제1접속패드; 및상기 상부전극층과 전기적으로 접속되는 제2접속패드;를 포함하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 기판 상에 피막된 제1보호층을 더 포함하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 2항에 있어서,상기 제1보호층은, 실리콘 나이트라이드, 실리콘산화물 중 어느 하나를 소재로 하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 2항에 있어서,상기 제1보호층은 그 두께가 0 ~ 10㎛인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 기판은 플렉서블한 고분자 물질을 소재로 하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 5항에 있어서,상기 고분자 물질은 폴리이미드인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 멤브레인층은 실리콘 나이트라이드를 소재로 하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 멤브레인층은 그 두께가 0 ~ 5㎛인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 상부전극층과 상기 하부전극층은 금속, 전도성폴리머 중에서 선택된 어느 하나를 소재로 형성된 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 하부전극층은 그 두께가 0.01㎛ ~ 5㎛인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 상부전극층은 그 두께가 0.01㎛ ~ 5㎛인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 압전폴리머는 PVDF, PVDF-TrEF, TrEF, Polyurea, Polyimid, Nylon 중에서 선택된 어느 하나인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 활성층은 그 두께가 1㎛ ~ 10㎛인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 활성층은 공진 주파수가 1㎐ ~100㎑인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 활성층은 그 길이가 50㎛ ~ 1000㎛인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 1항에 있어서,상기 상부전극층과 상기 하부전극층 및 상기 활성층을 커버하는 제2보호층을 더 포함하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 16항에 있어서,상기 제2보호층은 실리콘 나이트라이드, 실리콘 산화물 중 선택된 어느 하나를 소재로 하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 제 16항에 있어서,상기 제2보호층은 그 두께가 1㎛ ~ 10㎛인 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서.
- 플렉서블 기판 상에 희생층을 적층한 후 소정 형태로 패터닝하는 단계;상기 패터닝된 희생층 및 상기 플렉스블 기판 상에 PECVD공정으로 멤브레인층을 적층시키는 단계;상기 멤브레인층 상에 하부전극층을 증착시킨 후 패터닝하는 단계;상기 하부전극층 상에 활성층을 증착하고, 그 위에 상부전극층을 증착한 후 상기 상부전극층을 패터닝한 후, 상기 활성층을 패터닝하는 단계;상기 하부전극층에 접속되도록 제1접속패드를 형성하고, 상기 상부전극층에 접속되도록 제2접속패드를 형성하는 단계; 및상기 희생층을 제거하는 단계;를 포함하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서 제작방법.
- 제 19항에 있어서상기 희생층을 적층하기 전에 상기 플렉서블 기판 상에 PECVD 공정 또는 스퍼터링 공정으로 실리콘 나이트라이드, 실리콘 산화물 중 어느 하나의 소재로 증착하여 제1보호층을 형성하는 단계를 더 포함하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서 제작방법.
- 제 19항에 있어서상기 희생층 형성 단계는 폴리이미드를 코팅하고, 상기 멤브레인층의 형상에 따라 습식 또는 건식 에칭에 의해 패터닝하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서 제작방법.
- 제 19항에 있어서,상기 희생층은 그 두께가 0~10㎛ 되도록 형성하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서 제작방법.
- 제 19항에 있어서상기 멤브레인층 형성 단계는, 상기 희생층 상에 PECVD 공정으로 실리콘 나이트라이드를 적층한 후 건식 에칭 방법으로 패터닝하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서 제작방법.
- 제 19항에 있어서상기 활성층 형성 단계는, 하부전극층 상에 스핀코팅 또는 이바포레이션 공정으로 압전폴리머를 적층한 후 습식 또는 건식 에칭방법으로 패터닝하는 것을 특징으로 하는 플랙서블 MEMS 트랜스듀서 제작방법.
- 제 24항에 있어서,상기 압전폴리머는 PVDF, PVDF-TrEF, TrEF, Polyurea, Polyimid, Nylon 중에서 선택된 어느 하나인 것을 특징으로 하는 플랙서블 MEMS 트랜스듀서 제작방법.
- 제 19항에 있어서상기 활성층을 그 두께가 0~10㎛ 되도록 형성하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서 제작방법.
- 제 19항에 있어서상기 상부전극층 상에, 상기 상부전극층과 상기 하부전극층 및 상기 활성층을 커버하도록 상기 제2보호층을 형성하는 단계를 더 포함하되, 상기 제2보호층은 PECVD공정으로 실리콘나이트라이드, 실리콘산화물 중에서 어느 하나를 증착시키고 습식 또는 건식 에칭으로 패터닝하여 형성하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서 제작방법.
- 제 27항에 있어서,상기 제2보호층은 그 두께가 0~10㎛ 되도록 형성하는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서 제작방법.
- 제 19항에 있어서상기 제1접속패드는 상기 하부전극층과 접속되는 위치의 상기 제2보호층을 습식 또는 건식 에칭으로 패터닝하고, 상기 제2접속패드는 상기 상부전극층과 접속되는 위치의 상기 제2보호층을 습식 또는 건식 에칭으로 패터닝한 후, 금속 또는 전도성 폴리머를 증착하고, 습식 또는 건식 에칭으로 패터닝하여 형성되는 것을 특징으로 하는 플렉서블 MEMS 트랜스듀서 제작방법.
- 플렉서블한 폴리머 재질의 기판;상기 기판 상에 PECVD 공정으로 형성되는 플렉서블 MEMS 트랜스듀서 구조물;상기 기판 상에 프린트되는 안테나;상기 기판에 임베디드되어 상기 플렉서블 MEMS 트랜스듀서 및 상기 안테나에 신호를 전달하는 와이어 및 인터페이스 회로;상기 기판에 결합되는 플렉서블 밧데리층; 및상기 플렉서블 밧데리층에 결합되는 플렉서블 블루투스 모듈층;을 포함하는 것을 특징으로 하는 플렉서블 무선 MEMS 마이크로폰.
- 제 30항에 있어서,상기 기판은 플렉서블한 고분자 물질을 소재로 하는 것을 특징으로 하는 플렉서블 MEMS 무선 마이크로폰.
- 제 31항에 있어서,상기 고분자 물질은 폴리이미드 인것을 특징으로 하는 플렉서블 MEMS 무선 마이크로폰.
- 제 30항에 있어서,상기 밧데리층은 종이와 같은 형상의 폴리머 밧데리인 것을 특징으로 하는 플렉서블 MEMS 무선 마이크로폰.
- 제 30항에 있어서,상기 밧데리층은 플렉서블 솔라 셀인 것을 특징으로 하는 플렉서블 MEMS 무선 마이크로폰.
- 제 30항에 있어서,상기 플렉서블 MEMS 트랜스듀서는 상기 기판 상에 상기 희생층을 증착한 후 PECVD 공정으로 차례로 증착되어 패터닝되는 멤브레인층, 하부전극층, 압전폴리머 활성층, 상부전극층, 상기 하부전극층, 상기 상부전극층과 각각 접속되는 접속패드를 포함하는 것을 특징으로 하는 플렉서블 MEMS 무선 마이크로폰.
- 제 30항에 있어서,상기 플렉서블 MEMS 트랜스듀서 구조물이 형성되고, 상기 안테나가 프린트되며, 상기 와이어 및 인터페이스회로가 임베디드된 상기 플렉서블 기판은, 설정된 각도에 따라 꺾이는 꺽임성을 구비한 것을 특징으로 하는 플렉서블 MEMS 무선 마이크로폰.
- 삭제
- PECVD 공정으로 형성되는 플렉서블 MEMS 트랜스듀서 구조물 및 상기 MEMS 트랜스듀서 구조물에 연결되어 외부에 신호를 전달하는 안테나가 상부 표면에 각각 제조되며, 상기 MEMS 트랜스듀서 구조물 및 상기 안테나에 각각 신호를 전달하는 와이어 및 인터페이스회로가 임베디드된 플렉서블 기판; 플렉서블 밧데리층; 및 블루투스 모듈층을 각각 소정 두께로 차례로 적층하여 구성된 것을 특징으로 하는 플렉서블 MEMS 무선 마이크로폰.
- 제 38항에 있어서,상기 플렉서블 MEMS 무선 마이크로폰은, 설정된 각도에 따라 꺾이는 꺽임성을 구비한 것을 특징으로 하는 플렉서블 MEMS 무선 마이크로폰.
- 삭제
- 제 38항에 있어서,상기 적층된 플렉서블 MEMS 무선 마이크로폰을 소정의 3차원 모형을 구성하는 면의 형상에 따라 절단하고, 설정된 각도에 따라 꺽어서 상기 3차원 모형으로 조립하여 형성되는 것을 특징으로 하는 플렉서블 MEMS 무선 마이크로폰.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0058313A KR100512960B1 (ko) | 2002-09-26 | 2002-09-26 | 플렉서블 mems 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 mems 무선 마이크로폰 |
DE60312087T DE60312087T2 (de) | 2002-09-26 | 2003-09-25 | Flexible MEMS Wandler und Verfahren zu ihrer Herstellung, und flexible MEMS Mikrophone |
US10/669,428 US6967362B2 (en) | 2002-09-26 | 2003-09-25 | Flexible MEMS transducer and manufacturing method thereof, and flexible MEMS wireless microphone |
EP03256049A EP1403212B1 (en) | 2002-09-26 | 2003-09-25 | Flexible mems transducer and manufacturing method thereof, and flexible mems wireless microphone |
TW092126657A TWI235011B (en) | 2002-09-26 | 2003-09-26 | Flexible MEMS transducer and manufacturing method thereof, and flexible MEMS wireless microphone |
CNB031650147A CN100411968C (zh) | 2002-09-26 | 2003-09-26 | 柔性微机电系统换能器及其制造方法和无线扩音器 |
JP2003335768A JP4126003B2 (ja) | 2002-09-26 | 2003-09-26 | フレキシブルmemsトランスデューサとその製作方法及びこれを採用したフレキシブルmems無線マイクロホン |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0058313A KR100512960B1 (ko) | 2002-09-26 | 2002-09-26 | 플렉서블 mems 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 mems 무선 마이크로폰 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040026756A KR20040026756A (ko) | 2004-04-01 |
KR100512960B1 true KR100512960B1 (ko) | 2005-09-07 |
Family
ID=36598028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0058313A KR100512960B1 (ko) | 2002-09-26 | 2002-09-26 | 플렉서블 mems 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 mems 무선 마이크로폰 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6967362B2 (ko) |
EP (1) | EP1403212B1 (ko) |
JP (1) | JP4126003B2 (ko) |
KR (1) | KR100512960B1 (ko) |
CN (1) | CN100411968C (ko) |
DE (1) | DE60312087T2 (ko) |
TW (1) | TWI235011B (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8280079B2 (en) | 2008-09-25 | 2012-10-02 | Samsung Electronics Co., Ltd. | Piezoelectric microspeaker and method of fabricating the same |
US8363864B2 (en) | 2008-09-25 | 2013-01-29 | Samsung Electronics Co., Ltd. | Piezoelectric micro-acoustic transducer and method of fabricating the same |
US8549715B2 (en) | 2008-09-22 | 2013-10-08 | Samsung Electronics Co., Ltd. | Piezoelectric microspeaker and method of fabricating the same |
Families Citing this family (146)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7781850B2 (en) | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
KR100512988B1 (ko) * | 2002-09-26 | 2005-09-07 | 삼성전자주식회사 | 플렉서블 mems 트랜스듀서 제조방법 |
US7045246B2 (en) * | 2003-04-22 | 2006-05-16 | The Aerospace Corporation | Integrated thin film battery and circuit module |
US7434476B2 (en) * | 2003-05-07 | 2008-10-14 | Califronia Institute Of Technology | Metallic thin film piezoresistive transduction in micromechanical and nanomechanical devices and its application in self-sensing SPM probes |
TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
US7221495B2 (en) * | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
DE102004030748A1 (de) * | 2004-06-25 | 2006-01-12 | Sennheiser Electronic Gmbh & Co. Kg | Elektro-akustischer Backelektret-Wandler |
WO2006034377A2 (en) * | 2004-09-22 | 2006-03-30 | The Board Of Trustees Of The University Of Illinois | Light powered microactuator, microfluidic dispenser and retinal prosthesis |
US7936497B2 (en) | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
US7944599B2 (en) | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7527995B2 (en) | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
US7405861B2 (en) | 2004-09-27 | 2008-07-29 | Idc, Llc | Method and device for protecting interferometric modulators from electrostatic discharge |
US7564612B2 (en) | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
US7327510B2 (en) * | 2004-09-27 | 2008-02-05 | Idc, Llc | Process for modifying offset voltage characteristics of an interferometric modulator |
US7369296B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US7289259B2 (en) | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
US7684104B2 (en) | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
US7630119B2 (en) | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
US7304784B2 (en) | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
US8008736B2 (en) | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
US7372613B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
US7373026B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | MEMS device fabricated on a pre-patterned substrate |
US7642612B2 (en) * | 2005-06-17 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
EP2495212A3 (en) * | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
WO2007015593A1 (en) * | 2005-08-02 | 2007-02-08 | Bse Co., Ltd | Silicon based condenser microphone and packaging method for the same |
KR100675027B1 (ko) * | 2005-08-10 | 2007-01-30 | 주식회사 비에스이 | 실리콘 콘덴서 마이크로폰 및 이를 위한 실장 방법 |
KR100675025B1 (ko) * | 2005-08-20 | 2007-01-29 | 주식회사 비에스이 | 실리콘 콘덴서 마이크로폰 |
KR100644730B1 (ko) * | 2005-08-20 | 2006-11-10 | 주식회사 비에스이 | 실리콘 콘덴서 마이크로폰 |
CN101304942B (zh) * | 2005-09-09 | 2011-12-07 | Nxp股份有限公司 | Mems电容器麦克风及制造方法、箔片叠层、电子设备及使用 |
US7418281B2 (en) | 2005-09-13 | 2008-08-26 | International Business Machines Corporation | Centralized voice recognition unit for wireless control of personal mobile electronic devices |
US7362035B2 (en) * | 2005-09-22 | 2008-04-22 | The Penn State Research Foundation | Polymer bulk acoustic resonator |
KR100670946B1 (ko) * | 2005-10-27 | 2007-01-17 | 학교법인 포항공과대학교 | 나노 크기의 미세홀을 갖는 멀티스케일 캔티레버 구조물 및그 제조 방법 |
US7808253B2 (en) * | 2005-12-02 | 2010-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Test method of microstructure body and micromachine |
US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7652814B2 (en) | 2006-01-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | MEMS device with integrated optical element |
US7450295B2 (en) * | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
US7443082B2 (en) * | 2006-03-03 | 2008-10-28 | Basf Corporation | Piezoelectric polymer composite article and system |
CN101421177A (zh) * | 2006-04-10 | 2009-04-29 | Nxp股份有限公司 | 用于箔mems技术的层间连接 |
US7643203B2 (en) * | 2006-04-10 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Interferometric optical display system with broadband characteristics |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US7369292B2 (en) * | 2006-05-03 | 2008-05-06 | Qualcomm Mems Technologies, Inc. | Electrode and interconnect materials for MEMS devices |
US20070268209A1 (en) * | 2006-05-16 | 2007-11-22 | Kenneth Wargon | Imaging Panels Including Arrays Of Audio And Video Input And Output Elements |
WO2007136779A2 (en) * | 2006-05-19 | 2007-11-29 | New Jersey Institute Of Technology | Aligned embossed diaphgragm based fiber optic sensor |
WO2008100266A2 (en) * | 2006-05-19 | 2008-08-21 | New Jersey Institute Of Technology | Mems fiber optic microphone |
US7561277B2 (en) * | 2006-05-19 | 2009-07-14 | New Jersey Institute Of Technology | MEMS fiber optic microphone |
US7649671B2 (en) | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
KR100787217B1 (ko) * | 2006-07-10 | 2007-12-21 | 삼성전자주식회사 | Mems 구조물 및 그 제조방법 |
US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
US20080121947A1 (en) * | 2006-09-14 | 2008-05-29 | Robert Eugene Frahm | Solar-powered MEMS acoustic sensor and system for providing physical security in a geographical area with use thereof |
KR100776210B1 (ko) * | 2006-10-10 | 2007-11-16 | 주식회사 비에스이 | 마이크로폰 조립체의 제조장치 및 그 제조방법 |
US7706042B2 (en) | 2006-12-20 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
US8115987B2 (en) | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
CN101262712A (zh) * | 2007-03-09 | 2008-09-10 | 付庆兴 | 一种声音定向传播音响系统 |
US7733552B2 (en) | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
US7643202B2 (en) | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7630121B2 (en) | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
WO2009017718A2 (en) * | 2007-07-27 | 2009-02-05 | Kenneth Wargon | Flexible sheet audio-video device |
EP2183623A1 (en) | 2007-07-31 | 2010-05-12 | Qualcomm Mems Technologies, Inc. | Devices for enhancing colour shift of interferometric modulators |
US7570415B2 (en) * | 2007-08-07 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
US20090062913A1 (en) * | 2007-08-30 | 2009-03-05 | Laxminarayana Saggere | Light powered microactuator, microfluidic dispenser and retinal prosthesis |
DE102007041918A1 (de) * | 2007-09-04 | 2009-03-05 | Siemens Ag | Piezoelektrischer Energiewandler mit Doppelmembran |
GB2452941B (en) * | 2007-09-19 | 2012-04-11 | Wolfson Microelectronics Plc | Mems device and process |
US8058549B2 (en) | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
WO2009052324A2 (en) | 2007-10-19 | 2009-04-23 | Qualcomm Mems Technologies, Inc. | Display with integrated photovoltaic device |
KR20100103467A (ko) | 2007-10-23 | 2010-09-27 | 퀄컴 엠이엠스 테크놀로지스, 인크. | 조절가능하게 투과성인 mems―기반 장치 |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
KR20100093590A (ko) | 2007-12-17 | 2010-08-25 | 퀄컴 엠이엠스 테크놀로지스, 인크. | 후방 측 간섭계 마스크를 구비한 광전변환장치 |
US8164821B2 (en) | 2008-02-22 | 2012-04-24 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with thermal expansion balancing layer or stiffening layer |
KR100878454B1 (ko) * | 2008-02-28 | 2009-01-13 | (주)실리콘화일 | 신호처리블록을 구비하는 적층형 마이크로폰과 그 제조방법 |
US7829366B2 (en) * | 2008-02-29 | 2010-11-09 | Freescale Semiconductor, Inc. | Microelectromechanical systems component and method of making same |
US7944604B2 (en) | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US7612933B2 (en) | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
US7898723B2 (en) | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
EP2114085A1 (en) | 2008-04-28 | 2009-11-04 | Nederlandse Centrale Organisatie Voor Toegepast Natuurwetenschappelijk Onderzoek TNO | Composite microphone, microphone assembly and method of manufacturing those |
US20110138902A1 (en) * | 2008-05-27 | 2011-06-16 | Tufts University | Mems microphone array on a chip |
US8023167B2 (en) | 2008-06-25 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US10170685B2 (en) | 2008-06-30 | 2019-01-01 | The Regents Of The University Of Michigan | Piezoelectric MEMS microphone |
EP2297976B1 (en) | 2008-06-30 | 2020-09-30 | The Regents of the University of Michigan | Piezoelectric mems microphone |
US8358266B2 (en) | 2008-09-02 | 2013-01-22 | Qualcomm Mems Technologies, Inc. | Light turning device with prismatic light turning features |
US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
WO2010042653A1 (en) | 2008-10-07 | 2010-04-15 | Mc10, Inc. | Catheter balloon having stretchable integrated circuitry and sensor array |
US8372726B2 (en) | 2008-10-07 | 2013-02-12 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
US8389862B2 (en) * | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
US9123614B2 (en) | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
KR101545271B1 (ko) | 2008-12-19 | 2015-08-19 | 삼성전자주식회사 | 압전형 음향 변환기 및 이의 제조방법 |
US8270056B2 (en) | 2009-03-23 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with openings between sub-pixels and method of making same |
US7864403B2 (en) * | 2009-03-27 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Post-release adjustment of interferometric modulator reflectivity |
KR20120090771A (ko) | 2009-05-29 | 2012-08-17 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 조명장치 및 그의 제조방법 |
US8270062B2 (en) | 2009-09-17 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with at least one movable stop element |
US8488228B2 (en) | 2009-09-28 | 2013-07-16 | Qualcomm Mems Technologies, Inc. | Interferometric display with interferometric reflector |
US20110218756A1 (en) * | 2009-10-01 | 2011-09-08 | Mc10, Inc. | Methods and apparatus for conformal sensing of force and/or acceleration at a person's head |
US9723122B2 (en) | 2009-10-01 | 2017-08-01 | Mc10, Inc. | Protective cases with integrated electronics |
US8384341B2 (en) * | 2009-10-28 | 2013-02-26 | Harris Corporation | Battery cell for MEMS device and related methods |
TWI452006B (zh) * | 2009-11-13 | 2014-09-11 | United Microelectronics Corp | 微機電系統結構 |
US8421168B2 (en) * | 2009-11-17 | 2013-04-16 | Fairchild Semiconductor Corporation | Microelectromechanical systems microphone packaging systems |
EP2330649A1 (de) * | 2009-12-04 | 2011-06-08 | Bayer MaterialScience AG | Elektromechanischer Wandler, umfassend ein Polyurethanpolymer mit Polytetramethylenglykolether-Einheiten |
US8821009B2 (en) * | 2009-12-23 | 2014-09-02 | Intel Corporation | Thermal sensors having flexible substrates and use thereof |
JP2011142280A (ja) * | 2010-01-09 | 2011-07-21 | Seiko Epson Corp | アクチュエーター装置、アクチュエーター装置の製造方法、液体噴射ヘッドの製造方法および液体噴射装置の製造方法 |
KR20130100232A (ko) | 2010-04-09 | 2013-09-10 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 전기 기계 디바이스의 기계층 및 그 형성 방법 |
US9222816B2 (en) * | 2010-05-14 | 2015-12-29 | Belkin International, Inc. | Apparatus configured to detect gas usage, method of providing same, and method of detecting gas usage |
EP2606485A1 (en) | 2010-08-17 | 2013-06-26 | Qualcomm Mems Technologies, Inc. | Actuation and calibration of a charge neutral electrode in an interferometric display device |
US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
EP2521193A1 (de) * | 2011-05-06 | 2012-11-07 | Bayer Material Science AG | Elektromechanische Wandlereinrichtung |
EP2712491B1 (en) | 2011-05-27 | 2019-12-04 | Mc10, Inc. | Flexible electronic structure |
GB2491366A (en) | 2011-05-31 | 2012-12-05 | Nokia Corp | A configurable microphone or loudspeaker apparatus |
US8506826B2 (en) * | 2011-08-02 | 2013-08-13 | Harris Corporation | Method of manufacturing a switch system |
US8692111B2 (en) * | 2011-08-23 | 2014-04-08 | Sunpower Corporation | High throughput laser ablation processes and structures for forming contact holes in solar cells |
US8824706B2 (en) | 2011-08-30 | 2014-09-02 | Qualcomm Mems Technologies, Inc. | Piezoelectric microphone fabricated on glass |
US8724832B2 (en) | 2011-08-30 | 2014-05-13 | Qualcomm Mems Technologies, Inc. | Piezoelectric microphone fabricated on glass |
CN103843365B (zh) | 2011-09-30 | 2016-08-17 | 富士胶片株式会社 | 电声转换膜、柔性显示器、声带麦克风以及乐器传感器 |
US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
US9181086B1 (en) | 2012-10-01 | 2015-11-10 | The Research Foundation For The State University Of New York | Hinged MEMS diaphragm and method of manufacture therof |
US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
KR101346583B1 (ko) * | 2013-05-23 | 2014-01-03 | (주)에스엠인스트루먼트 | Mems 마이크로폰을 이용한 유연 기판 부착형 음향 측정 장치 및 그 제조 방법 |
US9510103B2 (en) | 2013-09-09 | 2016-11-29 | Audio Pixels Ltd. | Microelectromechanical apparatus for generating a physical effect |
CN103763668B (zh) * | 2013-10-18 | 2016-08-17 | 张小友 | 一种mems传声器 |
CN103645215B (zh) * | 2013-12-12 | 2017-01-11 | 中国科学院微电子研究所 | 一种基于柔性衬底的传感器模块 |
TWI575963B (zh) * | 2014-02-27 | 2017-03-21 | 先技股份有限公司 | 微機電麥克風裝置 |
JP2017524542A (ja) | 2014-05-28 | 2017-08-31 | スリーエム イノベイティブ プロパティズ カンパニー | 可撓性基板上のmemsデバイス |
CN105635926B (zh) * | 2014-10-29 | 2019-06-28 | 中芯国际集成电路制造(上海)有限公司 | 一种mems麦克风及其制备方法、电子装置 |
US9729193B2 (en) | 2014-11-11 | 2017-08-08 | Ut-Battelle, Llc | Wireless sensor platform |
US9439002B2 (en) * | 2014-11-13 | 2016-09-06 | Invensense, Inc. | Integrated package forming wide sense gap micro electro-mechanical system microphone and methodologies for fabricating the same |
US10567883B2 (en) | 2015-07-22 | 2020-02-18 | Audio Pixels Ltd. | Piezo-electric actuators |
US10433067B2 (en) | 2015-07-22 | 2019-10-01 | Audio Pixels Ltd. | DSR speaker elements and methods of manufacturing thereof |
KR101703608B1 (ko) * | 2015-08-28 | 2017-02-07 | 현대자동차 주식회사 | 탈착형 마이크로폰 및 그 제조 방법 |
WO2017040174A1 (en) | 2015-09-04 | 2017-03-09 | Ut-Battelle, Llc | Direct write sensors |
DE102015116707A1 (de) | 2015-10-01 | 2017-04-06 | USound GmbH | Flexible MEMS-Leiterplatteneinheit sowie Schallwandleranordnung |
CN105336818B (zh) * | 2015-12-03 | 2017-11-14 | 中国电子科技集团公司第十八研究所 | 太阳电池的制备方法 |
DE102016216365A1 (de) * | 2016-08-31 | 2018-03-01 | Robert Bosch Gmbh | Wandlereinrichtung |
JP6293938B1 (ja) | 2017-02-08 | 2018-03-14 | 日本航空電子工業株式会社 | フィルム面受音型音センサモジュール |
US10505162B2 (en) | 2017-10-05 | 2019-12-10 | Analog Devices, Inc. | Battery housing |
US10356523B2 (en) | 2017-12-13 | 2019-07-16 | Nvf Tech Ltd | Distributed mode loudspeaker actuator including patterned electrodes |
CN110149100B (zh) * | 2018-02-12 | 2023-10-13 | 诺思(天津)微系统有限责任公司 | 柔性电子器件及其制备方法 |
US11764392B2 (en) | 2018-03-01 | 2023-09-19 | Analog Devices, Inc. | Battery assembly and method of manufacturing the same |
US10477321B2 (en) * | 2018-03-05 | 2019-11-12 | Google Llc | Driving distributed mode loudspeaker actuator that includes patterned electrodes |
CN110300361A (zh) * | 2019-06-20 | 2019-10-01 | 钰太芯微电子科技(上海)有限公司 | 一种带无线充电线圈的mems麦克风 |
CN110337056B (zh) * | 2019-08-06 | 2021-01-26 | 常州元晶电子科技有限公司 | 一种高密度指向性压电电声换能器阵列的制作方法 |
CN111486973A (zh) * | 2020-03-30 | 2020-08-04 | 成都众芯科技有限公司 | 一种全柔性热释电红外探测器 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4714824A (en) * | 1985-04-16 | 1987-12-22 | Mitsubishi Denki Kabushiki Kaisha | Photoelectric transducer with adjustable sensitivity to incident light wavelength |
JPH0563171A (ja) * | 1991-08-30 | 1993-03-12 | Kyocera Corp | 光電変換素子の製造方法 |
JPH07254568A (ja) * | 1994-01-28 | 1995-10-03 | Toray Ind Inc | アモルファスシリコン−ゲルマニウム膜およびその製造方法 |
US5914507A (en) * | 1994-05-11 | 1999-06-22 | Regents Of The University Of Minnesota | PZT microdevice |
US6071819A (en) * | 1997-01-24 | 2000-06-06 | California Institute Of Technology | Flexible skin incorporating mems technology |
JP2001085075A (ja) * | 1999-09-10 | 2001-03-30 | Hitachi Maxell Ltd | 光電変換素子及びその製造方法 |
JP2001250963A (ja) * | 2000-03-03 | 2001-09-14 | Tdk Corp | 太陽電池 |
KR20020016117A (ko) * | 2000-08-24 | 2002-03-04 | 신현준 | Mems 공정을 이용한 마이크로폰 제작방법 |
JP2002271897A (ja) * | 2001-01-24 | 2002-09-20 | Koninkl Philips Electronics Nv | 超音波変換器のアレイ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0557780A1 (de) * | 1992-02-25 | 1993-09-01 | Siemens Aktiengesellschaft | Ultraschallwandler mit piezoelektrischer Polymerfolie |
US5633552A (en) * | 1993-06-04 | 1997-05-27 | The Regents Of The University Of California | Cantilever pressure transducer |
US5488954A (en) * | 1994-09-09 | 1996-02-06 | Georgia Tech Research Corp. | Ultrasonic transducer and method for using same |
US5713724A (en) * | 1994-11-23 | 1998-02-03 | Coltec Industries Inc. | System and methods for controlling rotary screw compressors |
WO1997022141A1 (fr) * | 1995-12-14 | 1997-06-19 | Seiko Epson Corporation | Procede de fabrication d'un film semi-conducteur mince et dispositif obtenu par ce procede |
JP4294798B2 (ja) * | 1998-07-16 | 2009-07-15 | マサチューセッツ・インスティテュート・オブ・テクノロジー | 超音波トランスデューサ |
CN1144272C (zh) * | 2000-09-04 | 2004-03-31 | 中国科学院半导体研究所 | 采用teos源pecvd生长氧化硅厚膜的方法 |
US6764446B2 (en) * | 2000-10-16 | 2004-07-20 | Remon Medical Technologies Ltd | Implantable pressure sensors and methods for making and using them |
CA2429940C (en) * | 2000-12-01 | 2008-07-08 | The Cleveland Clinic Foundation | Miniature ultrasound transducer |
-
2002
- 2002-09-26 KR KR10-2002-0058313A patent/KR100512960B1/ko active IP Right Grant
-
2003
- 2003-09-25 EP EP03256049A patent/EP1403212B1/en not_active Expired - Fee Related
- 2003-09-25 DE DE60312087T patent/DE60312087T2/de not_active Expired - Lifetime
- 2003-09-25 US US10/669,428 patent/US6967362B2/en not_active Expired - Lifetime
- 2003-09-26 TW TW092126657A patent/TWI235011B/zh not_active IP Right Cessation
- 2003-09-26 CN CNB031650147A patent/CN100411968C/zh not_active Expired - Fee Related
- 2003-09-26 JP JP2003335768A patent/JP4126003B2/ja not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4714824A (en) * | 1985-04-16 | 1987-12-22 | Mitsubishi Denki Kabushiki Kaisha | Photoelectric transducer with adjustable sensitivity to incident light wavelength |
JPH0563171A (ja) * | 1991-08-30 | 1993-03-12 | Kyocera Corp | 光電変換素子の製造方法 |
JPH07254568A (ja) * | 1994-01-28 | 1995-10-03 | Toray Ind Inc | アモルファスシリコン−ゲルマニウム膜およびその製造方法 |
US5914507A (en) * | 1994-05-11 | 1999-06-22 | Regents Of The University Of Minnesota | PZT microdevice |
US6071819A (en) * | 1997-01-24 | 2000-06-06 | California Institute Of Technology | Flexible skin incorporating mems technology |
JP2001085075A (ja) * | 1999-09-10 | 2001-03-30 | Hitachi Maxell Ltd | 光電変換素子及びその製造方法 |
JP2001250963A (ja) * | 2000-03-03 | 2001-09-14 | Tdk Corp | 太陽電池 |
KR20020016117A (ko) * | 2000-08-24 | 2002-03-04 | 신현준 | Mems 공정을 이용한 마이크로폰 제작방법 |
JP2002271897A (ja) * | 2001-01-24 | 2002-09-20 | Koninkl Philips Electronics Nv | 超音波変換器のアレイ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8549715B2 (en) | 2008-09-22 | 2013-10-08 | Samsung Electronics Co., Ltd. | Piezoelectric microspeaker and method of fabricating the same |
US8280079B2 (en) | 2008-09-25 | 2012-10-02 | Samsung Electronics Co., Ltd. | Piezoelectric microspeaker and method of fabricating the same |
US8363864B2 (en) | 2008-09-25 | 2013-01-29 | Samsung Electronics Co., Ltd. | Piezoelectric micro-acoustic transducer and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
EP1403212A2 (en) | 2004-03-31 |
DE60312087D1 (de) | 2007-04-12 |
TWI235011B (en) | 2005-06-21 |
JP2004120761A (ja) | 2004-04-15 |
TW200425768A (en) | 2004-11-16 |
US20040061543A1 (en) | 2004-04-01 |
US6967362B2 (en) | 2005-11-22 |
EP1403212A3 (en) | 2005-07-13 |
CN1517296A (zh) | 2004-08-04 |
KR20040026756A (ko) | 2004-04-01 |
DE60312087T2 (de) | 2007-11-29 |
CN100411968C (zh) | 2008-08-20 |
EP1403212B1 (en) | 2007-02-28 |
JP4126003B2 (ja) | 2008-07-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100512960B1 (ko) | 플렉서블 mems 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 mems 무선 마이크로폰 | |
KR100512988B1 (ko) | 플렉서블 mems 트랜스듀서 제조방법 | |
US11401161B2 (en) | Distributed sensor system | |
CN107032291B (zh) | 形成在pcb支撑结构处的mems压电式换能器 | |
US6140740A (en) | Piezoelectric transducer | |
US8598768B2 (en) | Piezoelectric micro energy harvester and manufacturing method thereof | |
KR20150129658A (ko) | 대칭 이중 압전 스택 마이크로일렉트로미캐니컬 압전 캔틸레버 에너지 하베스터 | |
EP1648195A1 (en) | Sound detection mechanism | |
WO2007107735A1 (en) | Mems device | |
EP3114714A1 (en) | Symmetric dual piezoelectric stack microelectromechanical piezoelectric devices | |
JP2016517684A (ja) | 停止部構造を有する圧電エネルギー回収器デバイス | |
WO2004107810A1 (ja) | 音響検出機構及びその製造方法 | |
US20190312531A1 (en) | Transparent energy harvesting device | |
CN110896518B (zh) | 一种mems结构的制造方法 | |
CN111182430A (zh) | 一种mems结构 | |
US20230234837A1 (en) | Mems microphone with an anchor | |
CN210694353U (zh) | 一种mems结构 | |
WO2009116957A2 (en) | Water resistant ultra-low pressure sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120716 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20130724 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20140721 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20150716 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20160718 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20170719 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20180717 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20190717 Year of fee payment: 15 |