JP3974284B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3974284B2
JP3974284B2 JP07348699A JP7348699A JP3974284B2 JP 3974284 B2 JP3974284 B2 JP 3974284B2 JP 07348699 A JP07348699 A JP 07348699A JP 7348699 A JP7348699 A JP 7348699A JP 3974284 B2 JP3974284 B2 JP 3974284B2
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JP
Japan
Prior art keywords
oxide
layer
conductive layer
forming
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP07348699A
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English (en)
Japanese (ja)
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JP2000269213A (ja
JP2000269213A5 (enExample
Inventor
孝 川ノ上
哲朗 松田
尚史 金子
匡 飯島
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Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP07348699A priority Critical patent/JP3974284B2/ja
Priority to US09/526,880 priority patent/US6348402B1/en
Priority to TW089104982A priority patent/TW452835B/zh
Priority to KR1020000013549A priority patent/KR100359968B1/ko
Publication of JP2000269213A publication Critical patent/JP2000269213A/ja
Publication of JP2000269213A5 publication Critical patent/JP2000269213A5/ja
Application granted granted Critical
Publication of JP3974284B2 publication Critical patent/JP3974284B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76844—Bottomless liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP07348699A 1999-03-18 1999-03-18 半導体装置の製造方法 Expired - Fee Related JP3974284B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP07348699A JP3974284B2 (ja) 1999-03-18 1999-03-18 半導体装置の製造方法
US09/526,880 US6348402B1 (en) 1999-03-18 2000-03-16 Method of manufacturing a copper interconnect
TW089104982A TW452835B (en) 1999-03-18 2000-03-17 Manufacture of semiconductor device
KR1020000013549A KR100359968B1 (ko) 1999-03-18 2000-03-17 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07348699A JP3974284B2 (ja) 1999-03-18 1999-03-18 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000269213A JP2000269213A (ja) 2000-09-29
JP2000269213A5 JP2000269213A5 (enExample) 2005-08-25
JP3974284B2 true JP3974284B2 (ja) 2007-09-12

Family

ID=13519667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07348699A Expired - Fee Related JP3974284B2 (ja) 1999-03-18 1999-03-18 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US6348402B1 (enExample)
JP (1) JP3974284B2 (enExample)
KR (1) KR100359968B1 (enExample)
TW (1) TW452835B (enExample)

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WO2000079586A1 (en) * 1999-06-24 2000-12-28 Hitachi, Ltd. Production method for semiconductor integrated circuit device and semiconductor integrated circuit device
JP4554011B2 (ja) 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US6433429B1 (en) * 1999-09-01 2002-08-13 International Business Machines Corporation Copper conductive line with redundant liner and method of making
JP3439402B2 (ja) * 1999-11-05 2003-08-25 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6846711B2 (en) * 2000-03-02 2005-01-25 Tokyo Electron Limited Method of making a metal oxide capacitor, including a barrier film
JP2001291720A (ja) * 2000-04-05 2001-10-19 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
JP2002110679A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
KR100365643B1 (ko) * 2000-10-09 2002-12-26 삼성전자 주식회사 반도체 장치의 다마신 배선 형성 방법 및 그에 의해형성된 다마신 배선 구조체
US6508919B1 (en) * 2000-11-28 2003-01-21 Tokyo Electron Limited Optimized liners for dual damascene metal wiring
JP2002164428A (ja) 2000-11-29 2002-06-07 Hitachi Ltd 半導体装置およびその製造方法
KR100386034B1 (ko) 2000-12-06 2003-06-02 에이에스엠 마이크로케미스트리 리미티드 확산 방지막의 결정립계를 금속산화물로 충진한 구리 배선구조의 반도체 소자 제조 방법
JP2002217292A (ja) 2001-01-23 2002-08-02 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
JP2003051481A (ja) * 2001-08-07 2003-02-21 Hitachi Ltd 半導体集積回路装置の製造方法
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
JP3648480B2 (ja) 2001-12-26 2005-05-18 株式会社東芝 半導体装置およびその製造方法
US20080070405A1 (en) * 2002-05-30 2008-03-20 Park Jae-Hwa Methods of forming metal wiring layers for semiconductor devices
KR100564605B1 (ko) * 2004-01-14 2006-03-28 삼성전자주식회사 반도체 소자의 금속 배선 형성 방법
KR100446300B1 (ko) * 2002-05-30 2004-08-30 삼성전자주식회사 반도체 소자의 금속 배선 형성 방법
KR100475931B1 (ko) * 2002-07-02 2005-03-10 매그나칩 반도체 유한회사 반도체 소자의 다층 배선 형성방법
JP2004140198A (ja) * 2002-10-18 2004-05-13 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JP2006505127A (ja) * 2002-10-29 2006-02-09 エーエスエム　インターナショナル　エヌ．ヴェー． 酸素架橋構造及び方法
JP2005244178A (ja) * 2004-01-26 2005-09-08 Toshiba Corp 半導体装置の製造方法
US20090304914A1 (en) * 2006-08-30 2009-12-10 Lam Research Corporation Self assembled monolayer for improving adhesion between copper and barrier layer
US7351656B2 (en) * 2005-01-21 2008-04-01 Kabushiki Kaihsa Toshiba Semiconductor device having oxidized metal film and manufacture method of the same
JP4199206B2 (ja) * 2005-03-18 2008-12-17 シャープ株式会社 半導体装置の製造方法
JP2007012996A (ja) * 2005-07-01 2007-01-18 Toshiba Corp 半導体装置
JP4282646B2 (ja) * 2005-09-09 2009-06-24 株式会社東芝 半導体装置の製造方法
JP2007173511A (ja) * 2005-12-22 2007-07-05 Sony Corp 半導体装置の製造方法
JP2007266073A (ja) * 2006-03-27 2007-10-11 Toshiba Corp 半導体装置及びその製造方法
TW200814156A (en) 2006-07-21 2008-03-16 Toshiba Kk Method for manufacturing semiconductor device and semiconductor device
JP2008258311A (ja) * 2007-04-03 2008-10-23 Denso Corp 半導体装置及び半導体装置の配線または電極形成方法
JP2010171398A (ja) * 2008-12-26 2010-08-05 Toshiba Corp 半導体装置の製造方法
US20110291147A1 (en) 2010-05-25 2011-12-01 Yongjun Jeff Hu Ohmic contacts for semiconductor structures
US9343357B2 (en) 2014-02-28 2016-05-17 Qualcomm Incorporated Selective conductive barrier layer formation
JP6259023B2 (ja) * 2015-07-20 2018-01-10 ウルトラテック インク 電極系デバイス用のａｌｄ処理のためのマスキング方法
JP6595432B2 (ja) * 2016-09-23 2019-10-23 東芝メモリ株式会社 半導体装置およびその製造方法
US9953927B1 (en) * 2017-04-26 2018-04-24 Globalfoundries Inc. Liner replacements for interconnect openings
KR102370620B1 (ko) 2017-07-10 2022-03-04 삼성전자주식회사 반도체 메모리 장치 및 도전체 구조물

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JPH04259242A (ja) * 1991-02-14 1992-09-14 Fujitsu Ltd 半導体装置の製造方法
US5130274A (en) 1991-04-05 1992-07-14 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures
US5679982A (en) * 1993-02-24 1997-10-21 Intel Corporation Barrier against metal diffusion
US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
US5918150A (en) 1996-10-11 1999-06-29 Sharp Microelectronics Technology, Inc. Method for a chemical vapor deposition of copper on an ion prepared conductive surface
JPH10189730A (ja) * 1996-11-11 1998-07-21 Toshiba Corp 半導体装置及びその製造方法
US6139697A (en) * 1997-01-31 2000-10-31 Applied Materials, Inc. Low temperature integrated via and trench fill process and apparatus

Also Published As

Publication number Publication date
JP2000269213A (ja) 2000-09-29
TW452835B (en) 2001-09-01
KR20000076888A (ko) 2000-12-26
US6348402B1 (en) 2002-02-19
KR100359968B1 (ko) 2002-11-07

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